TW518256B - Coating compositions and uses of the same - Google Patents

Coating compositions and uses of the same Download PDF

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Publication number
TW518256B
TW518256B TW086113399A TW86113399A TW518256B TW 518256 B TW518256 B TW 518256B TW 086113399 A TW086113399 A TW 086113399A TW 86113399 A TW86113399 A TW 86113399A TW 518256 B TW518256 B TW 518256B
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TW
Taiwan
Prior art keywords
coating
group
ceramic
patent application
item
Prior art date
Application number
TW086113399A
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English (en)
Inventor
Robert Charles Camilletti
Loren Andrew Haluska
Keith Winton Michael
Original Assignee
Dow Corning
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Publication of TW518256B publication Critical patent/TW518256B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3146—Carbon layers, e.g. diamond-like layers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
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    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/20—Resistance against chemical, physical or biological attack
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/80—Optical properties, e.g. transparency or reflexibility
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    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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  • Other Surface Treatments For Metallic Materials (AREA)

Description

e發明係針對使用較好含有甲基石夕倍半氧燒樹脂、膠體 氧化夺及特足之其他不透明物質及/或干擾劑之組合物形成 塗層之方法。此等保護塗層係用於各種基材上，但最好係 電子基材。 基材上（如電子設備）使用氫矽倍半氧烷樹脂（113丨03/2)11衍 生之陶質塗層爲已知。美國專利第4,756,977號中揭示在 :子基材上形成氧化矽塗層之方法。依此方法，將氫矽倍 半氧烷樹脂塗佈於基材上，接著在200—1000CC之溫度下， 於2氣中加熱塗佈之基材。然而美國專利第4,756,977號並 未敎示在塗層中使用不透明物質或干擾劑，而且基材上之 (HSi〇3/2)n樹脂衍生之陶瓷塗層亦無法抗溼蝕技術。 保護塗層中使用氧化矽爲已知。美國專利第3,986,997號 敘逑含在醇-水介質中之膠體氧化矽與甲基矽烷三醇之部份 縮合物之酸性分散液之塗層組合物。可使用塗層組合物， 在各種基材上塗佈透明之抗磨塗層。然而，此專利並未敘 述使用碳化鎢，鎢金屬或磷之酸酐當作不透明物質或干擾 劑；其未敘述將塗層塗佈於電子基材上，以提供溼姓抗 性；且未敘述如此處企圖之在高溫（即4〇〇至100MC)下塗 層之熱解。 經發現有用之塗層可由含磷之酸酐，預陶瓷之含矽物資 及特定之其他額外之不透明物質或干擾劑之組合物形成； 且此等塗層提供對抗各種干擾技術，尤其是溼蝕之保護及 抗性。 此方法包括將含不透明物質或干擾劑及預陶瓷之含碎物 -4 - 本紙張尺度適用中國國家標準（CNS ) M規格（210X297公釐） I- I - · (請先閱讀背面之注意事項再本頁} 經濟部中央標準局員工消費合作社印製 518256 A7 B7 輕濟部中夬，標率局員X消費合作、社印製 五、發明説明（ :用於神化鎵(GaAs)，石夕’金屬或其他電子基材，役備或 有圖案（晶圓上之應用。若需要，可塗佈第二種 層’如PECVD碳财，鑽石或氮切，以提 至於此處所用之層"_詞係敘述塗層纽合物加教 或熱解後形成之硬塗層。陶瓷塗層可含無定型氧化矽㈧⑴ 物質，以及塗層組合物加熱時得到之非完全不含殘留碳及2 石夕燒醇（ = SiOH)之似無定形·氧化矽物質二者。 田 ，•電子設備詞意指包含電子基材或電子電路者，如以 矽爲主之設備，以坤化鎵爲主之設備，焦面陣列，光電設 備’光電池及視情況之設備。 本方法中，陶瓷塗層係藉由塗佈含預陶瓷之含矽物質之 塗層組合物基底於基材上，接著在足以使預陶瓷之含矽物 貝轉化成含陶瓷Si〇2之塗層之溫度下加熱及熱解塗佈之基 材，在基材上形成。 土 若需要，依本發明之塗層組合物可含其他之陶瓷氧化物 前驅物，其實例爲各種金屬（如鋁、鈦、锆、鈕、鈮或飢） 之化合物；及非金屬化合物，如硼或磷；其任一種均可溶 於溶液中，經水解，接著熱解形成陶瓷氧化物塗層。 此等陶瓷氧化物前驅物化合物一般具有一個或多個鏈結 於上述金屬或非金屬上之可水解基，端視金屬之價數而 足。此化合物中所包含之可水解基之數目並無標準，只要 化合物溶於溶劑中即可。同樣地，正確可水解取代物之選 擇並無標準，因爲取代物可水解或熱解出系統。一般可水 解之取代物包含烷氧基，如甲氧基，丙氧基，丁氧基及己 (請先閱讀背面之注意事項再本I) T訂
A4規格（210X297公釐） 518256 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（4 ) 氧基，酿氧基，如乙醯氧基，經氧原子結合於該金屬或非 金屬之其他有機基，如乙酿丙酮酸鹽。可使用之特定化合 物包含四乙醯丙酮酸結，二丁氧二乙醯丙酮酸鈦，三乙醯 丙銅酸鋁，四異丁氧基鈦。 當塗層組合物與此等陶資氧化物前驅物之一結合時，其 用量一般係使最終之陶瓷塗層含〇 ·丨_ 3 〇重量百分比之改質 陶瓷氧化物前驅物。 本塗層組合物可含有鉑、铑或銅觸媒，以增加前驅物轉 化成乳化碎之速率及程度。通常，可溶化之銘、铑或銅化 合物或錯合物均適用，如乙醯丙酮酸鉑，铑觸媒RhCl3[S(CH2CH2CH2CH3)2]3(Midland、Michigan 之 Dow Corning公司之產物），或莕酸銅。此等觸媒之添加量，以 甲基秒倍半氧烷樹脂之重量爲準，係在5至1，000 ppmi 鉑，铑或銅之間。 若需要’本塗層組合物可含除p2〇5外之其他類不透明物 質或干擾劑。爲此，不透明物質或干擾劑係同意使用，以 敘述細分之固體相，其係分散於樹脂及最終之陶瓷塗層 中’且會（i)干擾檢香，（ii)阻礙檢查或（iii)防止設備之逆 工程。 —一 本發明中使用之特殊視情況物質包含（但不限）情形之不 透明物質，輻射不穿透物質、發光_物質、氧化物質，抗磨 蜂一f—二.學性物質及傳導物質。各種無機及有機類物質均可 依包含（但不限）粒狀，片狀，微泡狀等等之各種形態存 在0 (請先閱讀背面之注意事項再本頁) 木
，1T Λ 本紙浪尺度適用中國國家標準（CNS ) A4規格（2I0X297公釐）
視情況之不透明物質爲當與預陶瓷之含矽物質混合時， 可2所得之塗層無法穿透可見光之葯劑。視情況之不透明 物貝包S (但不限）矽之氧化物，氮化物及碳化物，及氧化 鋁，金屬及無機顏料。部份較佳之視情況不透明物質爲平 均粒徑爲6微米之電漿氧化鋁微胞，平均粒徑爲5至4〇微米 足氧化矽微胞，氮化矽㈠^；^4)粉或裂鬚，鎢金屬（w);碳 化矽（Sic)粉或裂鬚；氮化鋁（A1N)粉及黑色無機顏料，如 平均粒徑0.4微米之黑色Ferro®F633 1。 輻射不穿迓之物質係與預陶瓷之含矽物質混合時，使所 ί于之塗層典法穿透輕射（如X射線，U v，I r，及可見光以 及洱波）之葯劑。輻射不穿透之物質包含（但不限）重金屬如 鎢及鉛，及重金屬之不可溶鹽，如鋇，鉛，銀，金，鎘， 銻，麵，鈀，鳃，鎢及鉍。此鹽可包含例如，碳酸鹽，硫 酸鹽及氧化物。如前述較佳之輻射不穿透物質爲碳化鎢。 經濟部中央標準局員工消費合作社印裝 發光（物質爲當與預陶瓷之含矽物質混合時，可形成吸 收能量，且釋放超過熱輻射之電磁輻射之塗層之葯劑。此 等物貝一般爲燐，如硫化物（如硫化鋅及硫化鎘）；蹄化 物；硫硒化物·，氧基硫化物；氧支配之燐，如硼酸鹽，鋁 酸鹽，鎵酸鹽，矽酸鹽，及卣化物燐，如鹼金屬卣化物， 鹼土金屬卣化物及氧基卣化物。較佳者爲硫化物，且最好 者爲硫化鋅，磷化合物亦可摻雜活化劑，活化劑包含（但不 限）錳，銀及銅；稀土離子（其可爲卣化物者）。活化劑一般 係以0 · 1至1 0莫耳％ (以燐爲主）之量存在。 抗磨物貝爲當與預陶瓷之含碎物質混合時，可賦予所得 -8 · 本纸張尺度適用中國國家標準（CNS ) Α4規格ΠΙ^297公楚） 經濟部中央標準局工消費合作社印製 518256 A7 _____ B7 五、發明湖（7Ί ~~-— 塗層不易藉由磨擦設備（如磨擦或抛光）移除，且不奋傷爱 底下之基材之葯劑。列舉之抗磨填料爲（但不限）攀石，; 石粉，氮化鈥（谓），碳化鎮（wc)，碳化㈣Tac)及石墨之 纖維’ KEVLAR⑧（杜邦之芳系聚醯胺纖維之商標）， NEXTEL(3M公司，St. Paui，Minnes()ta之商標，氧化 質之氧化銘-氧化梦纖維）及氧化鋁（Al2〇3)。如前述，碳化 镇爲最佳之抗磨物質。 抗能量物質爲當與預陶瓷之含矽物質混合時，與能量源 (如臭氧，uv_臭氧，氣體游離基及離子，任何蒸氣或液態 反應物種及電漿）反應，以有效地造成電路及記憶體劣化之 藥劑。列舉之抗能量物質爲（但不限）重金屬如鉛，鎢，鈕 及銻。 磁性物質爲當與預陶瓷之含矽物質混合時，會賦與所得 之塗層磁性（即以磁場磁化；具有淨磁性動量）之蔡劑。列 舉之磁性物質爲碳合金鉄酸鹽，鉄碳醯及金屬如鐵、·錳、 鈷、鎳、銅、鈦、釩、鉬、鎂、鋁、鉻、錐、鉛及鋅之合 金。 傳導物質爲當與預陶瓷之含矽物質混合時，可賦予所得 塗層導電或導熱之蔡劑。列舉之傳導物質爲金，銀，銅， 鋁，鎳，鋅，鉻，鈷及鑽石。 此處所用之其他視情況不透明物質或干擾劑包含合成及 天然之物質’各種金屬及非金屬之氧化物，氮化物及硼化 物，如玻璃氧氮化燐（PON)，氧化鋁，二氧化鈦，氧化 鋅，氧化鎢氧化錐（Zr02)及氧化釕（ru〇2);鈦酸鹽如鈦酸 -9 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） {請先閱讀背面之注意事項再；本頁j —訂 518256 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 鉀及鈦酸鋇；鈮酸鹽如鈮酸鋰（LiNb03)及鈮酸鉛（Nb〇3)2 ; 硫鎖；碳酸#5 ;沈殿之碎薄土；；酸銘或其他碎酸鹽； 顏料及染料，如結晶紫（C25H3GN3C1)及花青；燐；金屬如 銀’銘或銅，wollastonite(CaSi03) ·’雲母；高嶺土；灰 石；滑石；有機物質如纖維素，聚亞醯胺，紛樹脂，環氧 樹脂，聚苯並環丁燒；氟碳聚合物如聚四氟乙稀（C 2F 4) η， 氟化亞乙晞H2C = CF2及六氟丙烯CF3CF : CF2 ;高介電常數 物質如金屬（如鳃，錘，鋇，鉛，鑭，鐵，鋅及鎂）之鈦酸 鹽，說酸鹽或鎢酸鹽，即，鈥酸鋇（BaTi03)、飲酸卸 (K2Ti03)，說酸錯，鈥酸41，鈥酸總，銷翅鈥酸鹽，錯鑭 锆鈦酸鹽，鉛錘鈦酸鹽及鎢酸鉛。 使用之視情況不透明物質或干擾劑之種類將依塗層所需 之用途而定。因此，若塗層欲用作層間之電介質，則需要 如氧化鋁之物質，因此塗層將具有低的介電常數（DK)。若 需具有南D K之塗層’應使用如献酸銷或銳酸錯之物質。若 需要導電塗層，則可添如其他類之金屬。 不透明物質或干擾劑之粒徑及形狀可在廣範圍内改變， 依如物質種類及所需塗層之厚度等因子而定。本塗層之厚 度較好少於500微米，因此100至低於500微米之粒徑一般 已足夠。可使用較小之粒徑，如5 0 · 1 0 0微米，或自次微米 (即5-150毫微米（nm))至10微米之粒徑。 不透明物質或干擾劑之量可經改變，依最終塗層所需之 品質及電特性而定。通常，不透明物質及干擾劑之用量， 以預陶瓷之含矽物質之重量爲準，自1重量自分比至低於 -1 0 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再_本頁) 訂 518256 A7 B7 經濟部中央標隼局員工消費合作社印製 五、發明説明（8 ) 94重量百分比。需使用足夠之樹脂以確保含有足夠之樹 脂’以結合不透明物質或干擾劑。亦可使用較小量之不透 明物質或干擾劑，即1 - 5重量百分比。 若需要，塗層組合物可含有矽烷偶合劑，以改質不透明 物質或干擾劑之表面，得到較佳之接著。通常，矽烷偶合 劑爲式Aw-wSlYn ’其中A爲單價有機基，如烷基、芳基或 官能性基，如甲基丙烯基，甲基丙缔氧基，環氧，乙烯基 或烯丙基；Y爲可水解基，如具丨-6個碳原子之硫氧基，具 2-8個碳原子之燒氧烷氧基，或乙醯氧基；且^爲丨、2或 3，較好爲3。 適用之梦统偶合劑之邵份實例爲式CH2 = c(CH3)c〇〇 (CH2)3Si(OCH3)3之3-甲基丙晞氧基丙基三甲氧石夕燒； 縮水甘油氧基丙基三甲氧石夕燒；式 HSCH2CH2CH2Si( OCH3)3之3 -氫石瓦丙基三甲氧基珍燒，式 CH2=CHSi(〇OCCH3)3之乙晞三乙醯氧基石夕燒，式 CH2=CHSi(OC2H5)3之乙烯三乙氧基石夕燒；式 CH2=CHSi(OCH2CH2OCH3)3之乙、缔-參（2 -曱氧乙氧基）矽 烷；及2-(3，4-環氧環己基）乙基三曱氧基矽烷。美國專利 第4,689,085號敘述此等及適合之其他適當矽烷偶合劑。 依本方法，塗層組合物係塗佈於基材（如電子設備）之表 面上。可使用各種輔助設備，如攪拌與加熱，以使不透明 物質或干擾劑溶解或分散於基礎塗層組合物中，且產生更 均勻之塗層溶液。例如，塗層溶液可藉由以均勻機聲波探 針或膠體研磨機，混合樹脂，不透明物質或干擾劑，溶液 -11 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再本頁)
"口 518256 經濟部中央標準局員工消費合作社印製 Α7 Β7 發明説明（9 ) 及矽烷偶口劑製備’得到塗佈於電子設備表面之塗層溶 液。 可用之溶劑包含使樹脂及不透明物質溶解或分散，形成 均勻之液體混合物，而不會影響所得塗層之葯劑或药劑之 混合物，此等溶劑可包含例^”醇如乙醇，異丙醇及正丁 醇，酮，§θ及一醇酯。溶劑之含量應足以使物質溶解或分 散至塗佈所需之濃度。通常’使用足夠之溶劑，以形成 0 · 1 - 8 0重量百分比之混合物，但較好爲卜5 〇重量百分比之 混合物。 塗層、，且口物再塗佈於基材上。塗層組合物可以旋轉塗 佈’浸潰塗佈’噴塗或流塗塗佈。亦可使用任何其他相等 之塗佈方法，如以綠網，網印，凹面塗佈或波狀焊料塗 佈，將塗層組合物塗佈於基材上。 使溶劑自塗佈之基材上蒸發，形成含樹脂及不透明物質 之塗層組合物之沈積物。可使用蒸發之任何設備，如曝露 於周遭環境下空氣乾燥，或熱處理之早期階段中之眞空或 中熱（即低於50C)之塗佈。當使用旋轉塗佈時，任何額外 之乾燥時段在旋轉驅除溶劑至某種程度時爲最小。 溶劑移除後，含樹脂與不透明物質之塗層組合物藉由熱 解（即使其加熱至足以陶瓷化之溫度）轉化成陶瓷塗層。通 常，此溫度係在4〇0至1，000。(：之間，依熱解氣體而定。加 熱進行之時間係足以使塗層組合物陶瓷化者。通常，加熱 需要1至6小時，但一般適合者爲少於3小時。 使塗層組合物陶瓷化之加熱係在眞空至超大氣壓之氣體 -12 - 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 叫256 經濟部中央標準局員工消費合作社印製 A7 ——_B7 五、發明説明（1〇 ) 壓力下，及氧化或非氧化之氣體環境，如空氣；氧氣及惰 性氣體，如氮、氨、胺、水氣或氧化氮下進行。加熱可使 用對流烘箱、快速熱製程、熱板、輻射能或微波能進行。 加熱之速率並無標準，雖然實務上係儘可能快速地加熱塗 層組合物。 陶資塗層之厚度可廣泛地改變，但一般爲1 — 500微米。此 等陶瓷塗層可爲任何基材之平滑不規則表面。此塗層係（i) 相對典缺Pu ’（ i i )具極佳之接著性及（丨丨i)具各種電氣性 質，即，DK，s低於4且達到電塗層。因此，此塗層對於電 子應用特別有用，如介電層，保護層及導電層。 若需要，陶瓷塗層可塗佈額外之塗層。此等額外之塗層 包含Si〇2塗層，Si〇2/陶瓷氧化物塗層，含矽之塗層，含石夕 碳之塗層，含矽氮之塗層，含矽氧氮之塗層，含矽氮碳之 塗層及似鑽石之碳塗層。塗佈此塗層之方法敘述於美國專 利第4,756,977號。特別好之額外塗層爲碳化石夕。 塗佈額外塗層（如碳化矽）之方法並無標準。且此塗層可 以以任何化學蒸氣沈積技術（如熱化學蒸氣沈積（丁Cvd)， 光化學蒸氣沈積，電漿提升之化學蒸氣沈積（pECVD)，電 子粒迴旋加速器共振（ECR)，及噴射蒸氣沈積塗佈。其亦 可以以物理蒸氣沈積技術塗佈，如濺射或電子束蒸發。此 等製程包含添加熱或電漿形式之能量於蒸發之物種中，產 生所需之反應，或集中能量於物質之固體樣品上，產生其 沈積。 例如，TCVD中，塗層係藉由使所需前驅物氣體之氣流通 -1 3 - 本紙張尺度適用中國國家標準(:CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再本頁) .裝· 訂 11 A7 經濟.郅中央標準局員工消費合作社印製 、發明説明（ 過加熱之基材上沈積。當前驅物氣體與熱表面接觸時，反 應且沈積塗層。基材溫度在内已足以在數分鐘 至數小時内形成此等塗層，依前驅物氣體及塗層厚度而 定。此製程中可使用反應金屬以協助沈積。
PECVD技術中，前驅物氣體係藉由使其通過電漿場反 應。反應物種在基材處形成且集中，且立即附著。pEcvD 製程優於TCVD製程之處爲前者可使用較低之基材及處理溫 度，即 25-600°C。 PECVD製程中使用之電漿可爲由電氣放電，輻射頻率或 微波範圍中之電磁場，雷射或粒子束衍生之能量。大部份 之電漿沈積製程中，較好使用適度動力密度（即〇1巧瓦/平 方公分輻射頻率（即10 kHz至1〇2 MHz)或於中度動力密 度（即0.1-5瓦/平方公分）之微波能（即〇 11〇GHz或 hertz)。頻率，動力及壓力係適用於欲使用之前驅物氣體及 設備。 ^ 可用之邵份丽驅物氣體包含（1)在丨· 6個碳原子之烷類（如 甲烷，乙烷及丙烷）之存在下之矽烷或卣矽烷（如三氣矽烷 (HSiCM)之混合物；（2)烷基矽烷如甲基石夕垸 (CH3SiH3)，二甲基矽烷（CH3)2SiH2 ;三甲基石夕燒 (CH3)3SiH 及六甲基二矽烷（CH3)3SiSi(CH3)3 ;或（3)美 國專利第5,011，706號中所述之矽代環丁烷或二碎代環丁 烷。 此種矽代環丁烷（1)及二矽代環丁烷（2)之實例如下所 示。R1爲氫，氟或1-4個碳原子之烴基。R2爲氫或丨_4個 -14 - 本纸張又度適用中國國家標準（CNS ) A4規格（210X297公釐） (请先閱讀背面之注意事項再填寫本頁} 觚 if 五、 發明説明（ 12 灭原子之烴基。較佳之二矽代環丁烷爲式（3 )中所示之i， 3 ·二甲基-1，3 -二矽代環丁烷。 R1 R1 R1 >〇< R2 \ P1 .Si \ Η ‘ HP、
Si Η •Η \
C c 經濟部中央標準局員工消費合作社印製 \ R1 XR1 H·八H H CK, 0 © 當使用碳化矽當作塗層時，可在電子設備上之含氧化矽 陶瓷層之表面上形成密封及電氣之屏障，且抑制化学及 機械設備之損害。 塗層組合物用之不透明物質或干擾劑爲碳化鎢，鎢及 ?2〇5。鎢金屬爲作用如同能量屏障之物質。鎢金屬及碳化 鶴分別對輻射及光有效。碳化鎢之M〇Hs，硬度評等大於 9.5 ’且嫣金屬之m〇Hs，硬度爲6.5-7·5。碳化鎢因此對抗磨 耗更有效’雖然各個均包含於塗層組合物中，且作用以提 供磨耗抗性。 需注意’ MoHs’硬度爲包含相對於已知物質相互刮磨之能 力數目判別之比較試驗。認可物質自卜1〇iM〇Hs，硬度刻度 之邵份實例爲，石墨之MoHs1硬度爲1，錳之MoHs，硬度爲 5，石英之MoHs，硬度爲7，且鑽石之MoHs，硬度爲10。 如前所述，P2〇2保護積體電路及記憶體免於溼蝕技術之 侵入，且塗層組合物中可包含矽烷偶合劑，以改善塗層對 電子設備之接著。 下例實例説明製備含（WC)，（W)及（P205)塗層组合物之 R2 R2 0) -15 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 13518256 A7 五、發明説明（ 本發明之方法。 測量塗層硬度所用之鉛筆試驗爲測定塗層刮塗抗性之標 準定性法。依試驗步驟，經塗佈之板置於固定之水平表面 上。鉛筆以45。角對塗佈膜，以離開技術員之方向進行試 驗。其係由技術員以一筆1/4英吋（6·5毫米）推離。技術員以 最硬之鉛筆（即9Η)開始此方，且繼續降低鉛筆硬度之規格 (即6Β)，直到不會切入或穿透薄膜。記錄不會切穿膜到達 基材，距離至少1/8英吋（3毫米）之最硬之鉛筆，使用Ber〇i 規格，即 Berol Corporation，Brentwood，Tennessee : 6B、5B、4B、3B、2B、B、HB、F、Η、2H ' 3H、4H、5H、6H、7H、8H、9H, (最軟） -〉 （最硬) 本塗層評估中所用之Vickers試驗爲物質對變形抗性之測 量。4 驗步驟敘述於 American Society for Testing and
Materials, Philadelphia，Pennsylvania，（ASTM)標準編號E92 經濟部中央標準局員工消費合作社印製 中。依試驗步驟，使用角錐形鑽石當作切割器。此試驗係 使用平樣品試驗，且切割器水力負荷於其上。當達到預定 數之凹處時，移除樣品，使用經校正之顯微鏡測量凹洞之 對角，接著平均其値。計算Vickers硬度値（VHN)，或可由 凹洞尺寸對Vickers硬度値之預計算表得到VHN。VHN範圍 之Vickers刻度自100之最低値（測量爲最軟）至9〇〇之最高値 (測量爲最硬）。 最適用於本發明之塗層組合物應含〇 〇5·2〇重量百分比之 預陶竞含矽物資，5·30重量百分比之鎢金屬，30_80重量百 分比之碳化鎢，0.1-5重量百分比之磷酸酐，及1-5重量百分 -16- 本纸張尺度適用巾關家縣（CNS ) A4· ( 21Qx 297公着 518256 A7 ^__ B7_______ 五、發明説明（14 ) 比之矽烷偶合劑·，其餘之塗層組合物爲溶劑。 碳化鎢之量可在1 -9 1體積百分比間變化。鎢金屬之量亦 可在卜91體積百分比減碳化鎢之體積百分比間改變。另 外，磷酸酐之量可在1-30體積百分比間改變，減結合碳化 鎢及嫣金屬之體積百分比。 本發明亦可使用磷酸酐與除含膠體氧化矽及甲基石夕垸三 醇之部份縮合物之塗層組合物結合，形成塗層。 有用之預陶瓷含矽物質包含矽氧化物前驅物，尤其是氧 化矽。可用之矽氧化物前驅物包含（但不限）氫矽倍半氧烷 樹脂之水解或部份水解之式RnSi(〇R)4 n，或上述之結合 物，其中各R分別爲1-20個碳原子，較好爲1_ 4個碳原子之 月曰系’脂環系或芳香系取代基’如^完基（即甲基，乙基，丙 基）’缔基（即乙晞基，或晞丙基），块基（即乙玦），環戊 基’環己基或苯基，且η爲0-3，較好爲〇或1。 經濟部中央標準局員工消費合作社印製 可用足氫矽倍半氧烷樹脂包含式HSi(〇H)x(〇R)》〇w之氫 矽氧烷樹脂，其中各R係在經氧原子與矽結合時，形成可水 解取代基之無關有機基或經取代之有機基，χ=0·2，厂0_ 2，ζ=1-3，x+y+z=3。尺之實例包含烷基，如甲基，乙基， 丙基，丁基，芳基如苯基，及晞基如晞丙基或乙晞基。此 等樹脂可爲完全縮合之（Hsi03/2)n或其可爲僅部份水解（即 含部份IsSi-OR)及/或部份縮合（即含部份之3Si_〇H)。雖 然不以此構造代表，但此等樹脂亦可含少數（例如，低於約 1〇%)之具有0或2個氫原子附於其上之矽原子，或由於各種 因子（包含其形成或處理）之少數三SiC鍵。 -1 7 - I紙張尺度適财( 2HTX297公釐) --- 518256 A7 B7 五 、發明説明（ 15 氫石夕倍半氧垸樹脂爲梯形或蘢形聚合物，其一般可以下 式表示·
ΗI -Si-I 〇I -Si-I H n 迷常’ n之値爲四或更高。爲說明起見，當11爲4時，碎倍 半氧烷立方八聚物之键結排列如下示： Η
Si· ：Si (請先閱讀背面之注意事項再本頁) 裝· 本 訂 〇H、
Si
Si—O
H ·ςι>
H ς» Λ 經濟部中央標準局員工消費合作社印製 當延伸此系列時（即n爲十或更高），形成相同較高分子量 之雙股聚物矽氧烷，在其延伸構造中含規則且重複之橫束 縛（cross_ties) 〇 氫矽倍半氧烷樹脂及其製法爲技藝中已知。美國專利 3,615,272號敎示藉由包括在苯續酸水合物水解介質中使二 氣料水解，接著財或硫酸水溶液洗料得樹脂之製考: -1 8 - 本^^尺度適财關家標準丨Gx297公着） I -1...... - I 1 · 製造幾乎完全縮合之氫矽倍半氧烷樹脂(其可含達100_ t /fm之夕浼醇）。美國專利第5,〇1〇，159號敎示包括在芳 i磺酸水口物水解介質中水解氫矽烷，形成樹脂，再使其 與中和劑接觸之另一方法。 其他=氫石夕氧貌樹脂，如美國專利第4,999,397號中所述 者，在酸性，醇水解介質中水解燒氧或酿氧基碎虎製成者 公開專利第59-178749，6G•議7及63•顧22號中所述者， 或任何其他相等之氫矽氧烷亦有此處之功能。 而 >王意’上述氫碎倍半氧烷樹脂之特殊分子量部份亦可 用於此製程中。此邵份及其製法係由美國專利第5,〇63,267 及5,416，190號敎示。較佳之部份包括其中至少75%之聚合 物物種之分子量超過^00之物質，且更好之部份包括其中 至少75%之聚合物物種之數平均分子量在1，2〇〇至1〇〇,〇〇〇之 間之物質。 經濟部中央標準局員工消費合作社印製 此處所用其他類之氧化矽前驅物物質包含式RnSi(〇R)4_n 之水解或部份水解化合物，其中R及η均如上面之定義。某 些此等化合物爲市售者，例如，新澤西州，Morristown:^ Allied Signal Inc·之商品名ACCUGLASS。此類之特定化合 物包含甲基三乙氧基矽烷，苯基三乙氧基矽烷，二乙基二 乙氧基矽烷，甲基三甲氧基矽烷，二甲基二甲氧基矽燒， 苯基三甲氧基矽烷，乙晞基三甲氧基矽烷，四甲氧基矽 烷，四乙氧基矽烷，四丙氧基矽烷及四丁氧基矽烷。此等 化合物水解或部份水解後，其中之矽原子結合於C，0H或 OR基上，但物質之實質部份相信將依可溶^Si-O-Sb樹脂之 -19- 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 五、發明説明（ 17 經濟部中央標準局員工消費合作社印製 Μ ^ ^ X 2或3〈化合物在熱解過程中產纟揮發性環狀 ^ ”般不早獨使用，但小量之該化合物可與其他矽 元/、水解，以製備有用之預陶瓷物質。 二他口 f預陶*物質〈其他實例包含碳氮化碎前驅物， •氫水夕氮烷树脂及甲基聚二矽氮烷樹脂。此等物質及製 去敘=美國專利第4,54G，8G3及4,3紙㈣號中。壤化碎前 驅物之κ例包含聚碳碎垸，且碳化碎前驅物之實例包含聚 =氮\ ^可加於由上述前驅物所得之陶究中，或前驅物 σ氣之衮境中以熱解轉化成氧化碎。亦可使用含碎預 陶瓷物質之混合物。 〃 又其他含矽之預陶瓷物質包含聚硼矽氮烷（或硼矽 烷）。，此等物質之製法係敘述於美國專利第5，169,908及美 專利第5,436,〇84號中，其一特別好之聚合物之實例爲藉 使氫矽氮烷聚合物與甲硼烷錯合物或二甲硼烷反應製成 以硼改為之氫聚矽氮烷，如5,436,〇84號專利中所説明者。 下列係藉由製備包含（wc)，（w)及（Ρ2〇5)之其他塗層組 合物説明本發明之實例。 實例I 下面所列物質（除！>2〇5外）均在容器中混合二十秒。添加 Ρ2〇5 ’且所得之混合物再以聲波探針混合二十秒，以製備 用作塗層組合物之溶液。 兔 AJL i.0克 以美國專利第3,615,272號之法製成之氫矽倍 半氧烷樹脂 請 先 閲 讀 背 之 注 意 事 項 再 i % 氮 國 由 之 訂 -20 - 本紙張尺度適用中關家榡準（CNS ) A4規格（21QX297公釐） 518256 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（18 ) 15.0 克 碳化鎢（W C ) 平均粒徑0.83微米 3.0克 鎢金屬（W) 平均粒徑0·6-0·9微米 0.08 克 Ρ2Ο5粉末 〇·4克 3 -縮水甘油氧基丙基三甲氧基矽烷 3,0克 二甲苯 22.48 克 全部 厚度爲40密耳之4.5英吋之正方形氧化鋁板使用之密耳之 下拉棒塗佈溶液。經塗佈之氧化鋁板空氣乾燥3小時。塗層 再於空氣中 ’ 400。C熱解一小時。以ι，〇〇〇倍放大之顯微 鏡檢測塗層 ，未發現裂痕。塗層厚度爲〗8.7微米。 實例11 以聲波探針在容器中混合下面所列物質二十秒共四次， 以製備用作塗層組合物之溶液。 兔 成份 1.104 克 以美國專利第4,540,803號之法製成之氫聚矽 氧淀（含55.6重量百分比固體之二甲苯） 10·5 克 碳化鎢（WC) 平均粒徑0.83微米 3.5克 鎢金屬（W) 平均粒徑0.6-0.9微米 〇·5克 Ρ2〇5粉末 〇·3克 3-縮水甘油氧基丙基三甲氧基矽燒 -21 - 本紙掁尺度適用中國國家標準（CNS ) A4規格（210X297公犛） A7 B7 518256 j、發明説明（19 ) 2·5克 25重量百分比之八甲基環四矽氧烷及75重量 --百分比之十甲基環五矽氧垸之混合物 1 8.4克 全部 厚度爲40密耳之4.5英吋之正方形氟化鋁板使用2密耳之 下拉棒塗佈溶液。經塗佈之氧化鋁板空氣乾燥3小時。塗層 再於空氣中’ 400。(：下熱解一小時。以ι，〇〇〇倍政大之顯 微鏡檢測塗層，未發現裂痕。塗層厚度爲12 8微米。
實例III 以聲波探針在容器中混合下面所列物質二十秒共四次， 以製備用作塗層組合物之溶液。 4- 成份 1.05克 以美國專利第5，169,908號之方法製成之硼氫 氷石夕氮fe(含1.5重量百分比之β之含於二甲 苯中之57重量百分比之固體） 10.5克 碳化鎢（WC) 平均粒徑0.83微米 3.6克 鎢金屬（W) 平均粒徑0.6-0.9微米 0.5克 P2O5粉末 0.3克 3 -縮水甘油氧基丙基三甲氧基矽烷 2.5克 25重量百分比之八甲基環四矽氧烷及75重量 - 百分比之十甲基環五矽氧烷之混合物 1 8.4 5克 全部 厚度爲4 0密耳之4 · 5英吋之正方形氟化鋁板使用2密耳 -22 - 本紙張尺度適用中国國家標準（CNS ) Α4規格（210X297公爱) (請先閲讀背面之注意事項再_本頁) 太 經濟部中央標率局員Η消費合作社印製 518256 ΑΊ Β7 五、發明説明（20 ) 之下拉棒塗佈溶液。經塗佈之氧化鋁板空氣乾燥1小時5 0 分鐘。塗層再於空氣中，400。C下熱解一小時。以1〇〇〇倍 放大之顯微鏡檢測塗層，未發現裂痕。塗層厚度爲3 1 . 7微 米。 請 先 閔 讀 背 之 注 Ϊ 事 項 再 填 寫 本 頁 經濟部中央標準局員工消費合作社印製 本纸浪尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）

Claims (1)

  1. 518256 A8 B8 第86113399號專利申請案 中文申請專利範圍修正本(89年2月）ES 六、申請專利範圍 經濟部中央標準局員工消費合作社印製 1. 一種塗層組合物，其包含〇1至5重量百分比之磷酸酐及 0.05至20重量百分比之預陶瓷含矽物質，其中該預陶瓷 含矽物質係選自由（i)氫矽倍半氧烷樹脂，（Η)式 RnSi(OR)4-n之水解或部分水解化合物，其中R分別為^ _ 20個碳原子之脂系，環脂系或芳系取代物，且n為〇_3 , (iii)氫聚矽氮烷樹脂，（iv)甲基氫矽氮烷樹脂，及^)硼 改質之氫聚矽氮烷所組成之群中。 2 ·根據申請專利範圍第丨項之塗層組合物，另外包括丨· 〇至 5.0重量百分比之式A(“}SiYn之矽烷偶合劑，其中a為 烷基，芳基或選自包含曱基丙晞基，甲基丙埽氧基，環 氧，乙烯基或缔丙基之官能性基；γ為選自包含具丨_6 個碳原子之烷氧基，具2 _ 8個碳原子之烷氧烷氧基，或 乙醯氧基之可水解基，具^為丨，2或3。 3 ·根據申清專利範圍第1項之塗層組合物，其中此組合物尚 包括含5至30重量百分比之鎢或含3〇至8〇重量百分比之 碳化鎢。 4 ·根據申請專利範圍第1項之塗層組合物，另外包括丨至$ 〇 重百分比之選自包含酮，酯及二醇酸之溶劑。 5 · —種保護電子設備，免於因設備曝露於激發之能源，輻 射，光，磨耗下之損害，及抗溼蝕技術之方法，包括在 設備之表面塗佈根據申請專利範圍第1項之塗層組合物。 6 · —種在電子設備上形成塗層之方法，包括將根據申請專 利範圍第1至5項中之任一項之塗層組合物塗佈於電子設 備之表面上。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) Φ. 、1T t )服56 A8 B8 C8
    .根據中請專利範HI第6項之方法，其中 输佈，浸漬塗怖，流動塗佈，旋轉塗二二“ 印，凹面塗佈或波狀焊料塗佈於電子設備之表=罔1 8.根據中請專利範圍第6項之方法，其中碳切，鐵 塗層係以電㈣刻化學蒸氣沈積塗饰於;: 9 · 一種根據申請專利範圍第6項之方法塗佈之電子設備。 #丨 (請先閲讀背面之注意事項再填寫本頁) -訂 f 經濟部中央標準局員工消費合作社印製 準 標 家 國 國 中 用 I適 釐 9 2
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