TW493276B - Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon - Google Patents

Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon Download PDF

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Publication number
TW493276B
TW493276B TW089104672A TW89104672A TW493276B TW 493276 B TW493276 B TW 493276B TW 089104672 A TW089104672 A TW 089104672A TW 89104672 A TW89104672 A TW 89104672A TW 493276 B TW493276 B TW 493276B
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TW
Taiwan
Prior art keywords
layer
interface
silicon
oxygen
original
Prior art date
Application number
TW089104672A
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English (en)
Chinese (zh)
Inventor
Jun Wang
William Jay Ooms
Jerald Allen Hallmark
Original Assignee
Motorola Inc
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Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW493276B publication Critical patent/TW493276B/zh

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    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G9/00—Forming or shuttering elements for general use
    • E04G9/10—Forming or shuttering elements for general use with additional peculiarities such as surface shaping, insulating or heating, permeability to water or air
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
TW089104672A 1999-03-22 2000-03-15 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon TW493276B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/274,268 US6248459B1 (en) 1999-03-22 1999-03-22 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Publications (1)

Publication Number Publication Date
TW493276B true TW493276B (en) 2002-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW089104672A TW493276B (en) 1999-03-22 2000-03-15 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Country Status (5)

Country Link
US (1) US6248459B1 (US06248459-20010619-C00001.png)
EP (1) EP1043427A1 (US06248459-20010619-C00001.png)
JP (1) JP2000294553A (US06248459-20010619-C00001.png)
KR (1) KR20000076850A (US06248459-20010619-C00001.png)
TW (1) TW493276B (US06248459-20010619-C00001.png)

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SG101423A1 (en) * 1999-03-22 2004-01-30 Motorola Inc Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
SG101424A1 (en) * 1999-03-22 2004-01-30 Motorola Inc Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon
US6652989B2 (en) * 1999-04-06 2003-11-25 Ut-Battelle, Llc Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
SG99871A1 (en) * 1999-10-25 2003-11-27 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6291319B1 (en) * 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6479173B1 (en) * 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
WO2002003437A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Hybrid semiconductor structure and device
SG165139A1 (en) * 2000-07-17 2010-10-28 Freescale Semiconductor Inc Method of preparing crystalline alkaline earth metal oxides on a si substrate
EP1301941A2 (en) * 2000-07-20 2003-04-16 North Carolina State University High dielectric constant metal silicates formed by controlled metal-surface reactions
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
EP1176230A1 (en) * 2000-07-26 2002-01-30 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on an Si substrate
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6524651B2 (en) * 2001-01-26 2003-02-25 Battelle Memorial Institute Oxidized film structure and method of making epitaxial metal oxide structure
KR20020064624A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 반도체소자의 유전체막 및 그 제조방법
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
DE10303875B4 (de) * 2003-01-31 2006-03-16 Technische Universität Clausthal Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur
JP2008034563A (ja) * 2006-07-27 2008-02-14 National Institute Of Advanced Industrial & Technology Ｍｉｓ型半導体装置

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DE3855246T2 (de) * 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
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Also Published As

Publication number Publication date
JP2000294553A (ja) 2000-10-20
EP1043427A1 (en) 2000-10-11
US6248459B1 (en) 2001-06-19
KR20000076850A (ko) 2000-12-26

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