SG101423A1 - Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon - Google Patents

Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Info

Publication number
SG101423A1
SG101423A1 SG200003946A SG200003946A SG101423A1 SG 101423 A1 SG101423 A1 SG 101423A1 SG 200003946 A SG200003946 A SG 200003946A SG 200003946 A SG200003946 A SG 200003946A SG 101423 A1 SG101423 A1 SG 101423A1
Authority
SG
Singapore
Prior art keywords
fabricating
silicon
metal oxide
alkaline earth
earth metal
Prior art date
Application number
SG200003946A
Inventor
Zhiyi Yu
Ravindranath Droopad
Corey Daniel Overgaard
Jamal Ramdani
Jay A Curless
Jerald A Hallmark
William J Ooms
Jun Wang
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/273,929 external-priority patent/US6241821B1/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to SG200003946A priority Critical patent/SG101423A1/en
Publication of SG101423A1 publication Critical patent/SG101423A1/en

Links

SG200003946A 1999-03-22 2000-07-14 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon SG101423A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200003946A SG101423A1 (en) 1999-03-22 2000-07-14 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/273,929 US6241821B1 (en) 1999-03-22 1999-03-22 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
SG200003946A SG101423A1 (en) 1999-03-22 2000-07-14 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Publications (1)

Publication Number Publication Date
SG101423A1 true SG101423A1 (en) 2004-01-30

Family

ID=32599446

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200003946A SG101423A1 (en) 1999-03-22 2000-07-14 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Country Status (1)

Country Link
SG (1) SG101423A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

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