HK1043246A1 - Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon. - Google Patents

Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.

Info

Publication number
HK1043246A1
HK1043246A1 HK02104063A HK02104063A HK1043246A1 HK 1043246 A1 HK1043246 A1 HK 1043246A1 HK 02104063 A HK02104063 A HK 02104063A HK 02104063 A HK02104063 A HK 02104063A HK 1043246 A1 HK1043246 A1 HK 1043246A1
Authority
HK
Hong Kong
Prior art keywords
fabricating
silicon
metal oxide
alkaline earth
earth metal
Prior art date
Application number
HK02104063A
Inventor
Zhiyi Yu
Ravindranath Droopad
Corey D Overgaard
Jamal Ramdani
Jay A Curless
Jerald A Hallmark
William J Coms
Wangjun
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of HK1043246A1 publication Critical patent/HK1043246A1/en

Links

HK02104063A 2000-07-14 2002-05-31 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon. HK1043246A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB00120260XA CN1140914C (en) 2000-07-14 2000-07-14 Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon

Publications (1)

Publication Number Publication Date
HK1043246A1 true HK1043246A1 (en) 2002-09-06

Family

ID=4588160

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02104063A HK1043246A1 (en) 2000-07-14 2002-05-31 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.

Country Status (2)

Country Link
CN (1) CN1140914C (en)
HK (1) HK1043246A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate

Also Published As

Publication number Publication date
CN1140914C (en) 2004-03-03
CN1334593A (en) 2002-02-06

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Legal Events

Date Code Title Description
AS Change of ownership

Owner name: FREESCALE SEMICONDUCTOR, INC.

Free format text: FORMER OWNER(S): MOTOROLA, INC

PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100714