TW490082U - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW490082U
TW490082U TW088217923U TW88217923U TW490082U TW 490082 U TW490082 U TW 490082U TW 088217923 U TW088217923 U TW 088217923U TW 88217923 U TW88217923 U TW 88217923U TW 490082 U TW490082 U TW 490082U
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW088217923U
Other languages
English (en)
Inventor
Dort Maarten Jeroen Van
Andrew Jan Walker
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Publication of TW490082U publication Critical patent/TW490082U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW088217923U 1994-10-28 1995-11-01 Semiconductor device TW490082U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94203146 1994-10-28

Publications (1)

Publication Number Publication Date
TW490082U true TW490082U (en) 2002-06-01

Family

ID=8217325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088217923U TW490082U (en) 1994-10-28 1995-11-01 Semiconductor device

Country Status (7)

Country Link
US (1) US5828099A (zh)
EP (1) EP0737366B1 (zh)
JP (1) JP3762433B2 (zh)
KR (1) KR100350819B1 (zh)
DE (1) DE69526328T2 (zh)
TW (1) TW490082U (zh)
WO (1) WO1996013863A2 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837584A (en) * 1997-01-15 1998-11-17 Macronix International Co., Ltd. Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
US6417539B2 (en) * 1998-08-04 2002-07-09 Advanced Micro Devices, Inc. High density memory cell assembly and methods
US6172392B1 (en) * 1999-03-29 2001-01-09 Vantis Corporation Boron doped silicon capacitor plate
US6060742A (en) * 1999-06-16 2000-05-09 Worldwide Semiconductor Manufacturing Corporation ETOX cell having bipolar electron injection for substrate-hot-electron program
US6087695A (en) * 1999-08-20 2000-07-11 Worldwide Semiconductor Mfg Source side injection flash EEPROM memory cell with dielectric pillar and operation
US6521958B1 (en) 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
US6518122B1 (en) 1999-12-17 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable flash EEPROM
US6933554B1 (en) * 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
US20020185673A1 (en) 2001-05-02 2002-12-12 Ching-Hsiang Hsu Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
CN1293640C (zh) * 2001-06-11 2007-01-03 力晶半导体股份有限公司 无接触点信道写入/抹除的闪存存储单元结构与制造方法
DE60226571D1 (de) * 2002-02-20 2008-06-26 St Microelectronics Srl Elektrisch programmierbare nichtflüchtige Speicherzelle
EP1349205A1 (en) * 2002-03-28 2003-10-01 eMemory Technology Inc. Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
KR100628642B1 (ko) * 2004-12-31 2006-09-26 동부일렉트로닉스 주식회사 고전압 모스 트랜지스터 및 고전압 모스 트랜지스터의형성방법
US7361551B2 (en) * 2006-02-16 2008-04-22 Freescale Semiconductor, Inc. Method for making an integrated circuit having an embedded non-volatile memory
CN103633118B (zh) * 2012-08-24 2016-12-21 上海华虹宏力半导体制造有限公司 浮栅电可擦除型只读存储器及制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577295A (en) * 1983-05-31 1986-03-18 Intel Corporation Hybrid E2 cell and related array
US4769340A (en) * 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
US5036375A (en) * 1986-07-23 1991-07-30 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
JPH088314B2 (ja) * 1989-10-11 1996-01-29 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
JP2602575B2 (ja) * 1990-07-06 1997-04-23 シャープ株式会社 不揮発性半導体記憶装置
US5102814A (en) * 1990-11-02 1992-04-07 Intel Corporation Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
FR2690008B1 (fr) * 1991-05-29 1994-06-10 Gemplus Card Int Memoire avec cellule memoire eeprom a effet capacitif et procede de lecture d'une telle cellule memoire.
US5274588A (en) * 1991-07-25 1993-12-28 Texas Instruments Incorporated Split-gate cell for an EEPROM
US5284784A (en) * 1991-10-02 1994-02-08 National Semiconductor Corporation Buried bit-line source-side injection flash memory cell
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
KR940009644B1 (ko) * 1991-11-19 1994-10-15 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
US5294819A (en) * 1992-11-25 1994-03-15 Information Storage Devices Single-transistor cell EEPROM array for analog or digital storage
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
US5432740A (en) * 1993-10-12 1995-07-11 Texas Instruments Incorporated Low voltage flash EEPROM memory cell with merge select transistor and non-stacked gate structure
US5404037A (en) * 1994-03-17 1995-04-04 National Semiconductor Corporation EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region

Also Published As

Publication number Publication date
EP0737366B1 (en) 2002-04-10
DE69526328D1 (de) 2002-05-16
EP0737366A1 (en) 1996-10-16
JPH09507616A (ja) 1997-07-29
DE69526328T2 (de) 2002-11-21
KR100350819B1 (ko) 2003-01-15
WO1996013863A2 (en) 1996-05-09
JP3762433B2 (ja) 2006-04-05
WO1996013863A3 (en) 1996-06-27
US5828099A (en) 1998-10-27

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MK4K Expiration of patent term of a granted utility model