TW483169B - MOS-transistor and its production method - Google Patents
MOS-transistor and its production method Download PDFInfo
- Publication number
- TW483169B TW483169B TW89124919A TW89124919A TW483169B TW 483169 B TW483169 B TW 483169B TW 89124919 A TW89124919 A TW 89124919A TW 89124919 A TW89124919 A TW 89124919A TW 483169 B TW483169 B TW 483169B
- Authority
- TW
- Taiwan
- Prior art keywords
- depth
- region
- source
- substrate
- notch
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000002513 implantation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 71
- 238000002955 isolation Methods 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 125000006850 spacer group Chemical class 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 1
- 230000002079 cooperative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1999157303 DE19957303B4 (de) | 1999-11-29 | 1999-11-29 | MOS-Transistor und Verfahren zu dessen Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW483169B true TW483169B (en) | 2002-04-11 |
Family
ID=7930663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89124919A TW483169B (en) | 1999-11-29 | 2000-11-23 | MOS-transistor and its production method |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE19957303B4 (de) |
| TW (1) | TW483169B (de) |
| WO (1) | WO2001039275A1 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064194A (zh) * | 2009-11-12 | 2011-05-18 | 三星电子株式会社 | 凹陷沟道晶体管装置、包括其的显示设备及其制造方法 |
| WO2021017003A1 (zh) * | 2019-08-01 | 2021-02-04 | 深圳市汇顶科技股份有限公司 | 电容检测电路、触摸检测装置和电子设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2103013B (en) * | 1981-07-31 | 1984-11-07 | Secr Defence | A method for producing a misfet and a misfet produces thereby |
| JPS6269562A (ja) * | 1985-09-20 | 1987-03-30 | Mitsubishi Electric Corp | 電界効果トランジスタ装置およびその製造方法 |
| KR0173111B1 (ko) * | 1988-06-02 | 1999-02-01 | 야마무라 가쯔미 | 트렌치 게이트 mos fet |
| JPH0385766A (ja) * | 1989-08-30 | 1991-04-10 | Matsushita Electron Corp | 半導体装置 |
| JPH03241870A (ja) * | 1990-02-20 | 1991-10-29 | Oki Electric Ind Co Ltd | 半導体装置 |
| EP1060518A1 (de) * | 1998-02-20 | 2000-12-20 | Infineon Technologies AG | Graben-gate-mos-transistor, dessen verwendung in einer eeprom-anordnung und verfahren zu dessen herstellung |
-
1999
- 1999-11-29 DE DE1999157303 patent/DE19957303B4/de not_active Expired - Fee Related
-
2000
- 2000-11-23 TW TW89124919A patent/TW483169B/zh not_active IP Right Cessation
- 2000-11-27 WO PCT/DE2000/004215 patent/WO2001039275A1/de active Application Filing
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064194A (zh) * | 2009-11-12 | 2011-05-18 | 三星电子株式会社 | 凹陷沟道晶体管装置、包括其的显示设备及其制造方法 |
| WO2021017003A1 (zh) * | 2019-08-01 | 2021-02-04 | 深圳市汇顶科技股份有限公司 | 电容检测电路、触摸检测装置和电子设备 |
| US11481072B2 (en) | 2019-08-01 | 2022-10-25 | Shenzhen GOODIX Technology Co., Ltd. | Capacitance detection circuit, touch detection apparatus and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001039275A1 (de) | 2001-05-31 |
| DE19957303A1 (de) | 2001-06-07 |
| DE19957303B4 (de) | 2006-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |