GB2103013B - A method for producing a misfet and a misfet produces thereby - Google Patents

A method for producing a misfet and a misfet produces thereby

Info

Publication number
GB2103013B
GB2103013B GB08221121A GB8221121A GB2103013B GB 2103013 B GB2103013 B GB 2103013B GB 08221121 A GB08221121 A GB 08221121A GB 8221121 A GB8221121 A GB 8221121A GB 2103013 B GB2103013 B GB 2103013B
Authority
GB
United Kingdom
Prior art keywords
misfet
produces
producing
misfet produces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08221121A
Other versions
GB2103013A (en
Inventor
John Charles White
Timothy William Janes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB08221121A priority Critical patent/GB2103013B/en
Publication of GB2103013A publication Critical patent/GB2103013A/en
Application granted granted Critical
Publication of GB2103013B publication Critical patent/GB2103013B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB08221121A 1981-07-31 1982-07-21 A method for producing a misfet and a misfet produces thereby Expired GB2103013B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08221121A GB2103013B (en) 1981-07-31 1982-07-21 A method for producing a misfet and a misfet produces thereby

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8123507 1981-07-31
GB08221121A GB2103013B (en) 1981-07-31 1982-07-21 A method for producing a misfet and a misfet produces thereby

Publications (2)

Publication Number Publication Date
GB2103013A GB2103013A (en) 1983-02-09
GB2103013B true GB2103013B (en) 1984-11-07

Family

ID=26280318

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08221121A Expired GB2103013B (en) 1981-07-31 1982-07-21 A method for producing a misfet and a misfet produces thereby

Country Status (1)

Country Link
GB (1) GB2103013B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2354880A (en) * 1999-09-30 2001-04-04 Mitel Semiconductor Ltd Metal oxide semiconductor field effect transistors
DE19957303B4 (en) * 1999-11-29 2006-05-11 Infineon Technologies Ag MOS transistor and method for its production
JP2005150190A (en) * 2003-11-12 2005-06-09 Mitsubishi Electric Corp Field effect transistor

Also Published As

Publication number Publication date
GB2103013A (en) 1983-02-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee