TW466535B - Plasma processing method and apparatus with control of RF bias - Google Patents

Plasma processing method and apparatus with control of RF bias Download PDF

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Publication number
TW466535B
TW466535B TW089106066A TW89106066A TW466535B TW 466535 B TW466535 B TW 466535B TW 089106066 A TW089106066 A TW 089106066A TW 89106066 A TW89106066 A TW 89106066A TW 466535 B TW466535 B TW 466535B
Authority
TW
Taiwan
Prior art keywords
plasma
source
impedance
power
electrode
Prior art date
Application number
TW089106066A
Other languages
English (en)
Chinese (zh)
Inventor
Arthur M Howald
John P Holland
Christopher Olson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TW466535B publication Critical patent/TW466535B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
TW089106066A 1999-03-31 2000-03-31 Plasma processing method and apparatus with control of RF bias TW466535B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/281,808 US6265831B1 (en) 1999-03-31 1999-03-31 Plasma processing method and apparatus with control of rf bias

Publications (1)

Publication Number Publication Date
TW466535B true TW466535B (en) 2001-12-01

Family

ID=23078875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089106066A TW466535B (en) 1999-03-31 2000-03-31 Plasma processing method and apparatus with control of RF bias

Country Status (7)

Country Link
US (1) US6265831B1 (US06265831-20010724-M00002.png)
EP (1) EP1166322B1 (US06265831-20010724-M00002.png)
JP (2) JP4601179B2 (US06265831-20010724-M00002.png)
KR (1) KR100805138B1 (US06265831-20010724-M00002.png)
DE (1) DE60034321T2 (US06265831-20010724-M00002.png)
TW (1) TW466535B (US06265831-20010724-M00002.png)
WO (1) WO2000058992A1 (US06265831-20010724-M00002.png)

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JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
TWI668725B (zh) * 2013-10-01 2019-08-11 美商蘭姆研究公司 使用模型化、回授及阻抗匹配之蝕刻速率的控制
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JP7011730B2 (ja) 2017-12-04 2022-01-27 エアロジェット ロケットダイン インコーポレイテッド 負荷インピーダンステスターおよび測定方法
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Also Published As

Publication number Publication date
JP2010251768A (ja) 2010-11-04
JP4601179B2 (ja) 2010-12-22
WO2000058992A1 (en) 2000-10-05
JP2002540615A (ja) 2002-11-26
KR100805138B1 (ko) 2008-02-21
EP1166322B1 (en) 2007-04-11
US6265831B1 (en) 2001-07-24
EP1166322A1 (en) 2002-01-02
DE60034321T2 (de) 2007-08-30
JP5334914B2 (ja) 2013-11-06
KR20020013841A (ko) 2002-02-21
DE60034321D1 (de) 2007-05-24

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