DE60034321D1 - Plasmabearbeitungsverfahren und -reaktor mit regelung der rf-bias-leistung - Google Patents

Plasmabearbeitungsverfahren und -reaktor mit regelung der rf-bias-leistung

Info

Publication number
DE60034321D1
DE60034321D1 DE60034321T DE60034321T DE60034321D1 DE 60034321 D1 DE60034321 D1 DE 60034321D1 DE 60034321 T DE60034321 T DE 60034321T DE 60034321 T DE60034321 T DE 60034321T DE 60034321 D1 DE60034321 D1 DE 60034321D1
Authority
DE
Germany
Prior art keywords
reactor
regulation
working method
plasma working
bias performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60034321T
Other languages
English (en)
Other versions
DE60034321T2 (de
Inventor
Arthur M Howald
John P Holland
Christopher Olson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60034321D1 publication Critical patent/DE60034321D1/de
Publication of DE60034321T2 publication Critical patent/DE60034321T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE60034321T 1999-03-31 2000-02-10 Plasmabearbeitungsverfahren und -reaktor mit regelung der rf-bias-leistung Expired - Lifetime DE60034321T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/281,808 US6265831B1 (en) 1999-03-31 1999-03-31 Plasma processing method and apparatus with control of rf bias
US281808 1999-03-31
PCT/US2000/003313 WO2000058992A1 (en) 1999-03-31 2000-02-10 Plasma processing method and apparatus with control of rf bias

Publications (2)

Publication Number Publication Date
DE60034321D1 true DE60034321D1 (de) 2007-05-24
DE60034321T2 DE60034321T2 (de) 2007-08-30

Family

ID=23078875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60034321T Expired - Lifetime DE60034321T2 (de) 1999-03-31 2000-02-10 Plasmabearbeitungsverfahren und -reaktor mit regelung der rf-bias-leistung

Country Status (7)

Country Link
US (1) US6265831B1 (de)
EP (1) EP1166322B1 (de)
JP (2) JP4601179B2 (de)
KR (1) KR100805138B1 (de)
DE (1) DE60034321T2 (de)
TW (1) TW466535B (de)
WO (1) WO2000058992A1 (de)

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US6677711B2 (en) * 2001-06-07 2004-01-13 Lam Research Corporation Plasma processor method and apparatus
US7480571B2 (en) * 2002-03-08 2009-01-20 Lam Research Corporation Apparatus and methods for improving the stability of RF power delivery to a plasma load
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US6919689B2 (en) * 2002-09-26 2005-07-19 Lam Research Corporation Method for toolmatching and troubleshooting a plasma processing system
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
US20060037704A1 (en) * 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method
ATE441203T1 (de) * 2005-06-10 2009-09-15 Bird Technologies Group Inc System und verfahren zur analyse des stromflusses in halbleiter-plasmaerzeugungssystemen
US7476556B2 (en) * 2005-08-11 2009-01-13 Micron Technology, Inc. Systems and methods for plasma processing of microfeature workpieces
US20070224709A1 (en) * 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
US7565220B2 (en) * 2006-09-28 2009-07-21 Lam Research Corporation Targeted data collection architecture
US7814046B2 (en) * 2006-09-29 2010-10-12 Lam Research Corporation Dynamic component-tracking system and methods therefor
TWI424524B (zh) * 2006-10-04 2014-01-21 Applied Materials Inc 電漿腔室中用於基板夾持之設備與方法
US20080084650A1 (en) 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
US7795817B2 (en) 2006-11-24 2010-09-14 Huettinger Elektronik Gmbh + Co. Kg Controlled plasma power supply
US8262847B2 (en) * 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US8222156B2 (en) * 2006-12-29 2012-07-17 Lam Research Corporation Method and apparatus for processing a substrate using plasma
JP2008186939A (ja) * 2007-01-29 2008-08-14 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びに記憶媒体
KR100857840B1 (ko) * 2007-03-06 2008-09-10 성균관대학교산학협력단 고밀도 플라즈마 소스 및 그 제어방법
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US8055203B2 (en) * 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
US20090095714A1 (en) * 2007-10-12 2009-04-16 Tokyo Electron Limited Method and system for low pressure plasma processing
JP5268625B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5632626B2 (ja) * 2010-03-04 2014-11-26 東京エレクトロン株式会社 自動整合装置及びプラズマ処理装置
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
TWI668725B (zh) * 2013-10-01 2019-08-11 美商蘭姆研究公司 使用模型化、回授及阻抗匹配之蝕刻速率的控制
JP6334369B2 (ja) * 2014-11-11 2018-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9776218B2 (en) * 2015-08-06 2017-10-03 Asml Netherlands B.V. Controlled fluid flow for cleaning an optical element
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP7011730B2 (ja) * 2017-12-04 2022-01-27 エアロジェット ロケットダイン インコーポレイテッド 負荷インピーダンステスターおよび測定方法
CN112119485B (zh) 2019-04-22 2024-01-02 株式会社日立高新技术 等离子处理方法
KR102254446B1 (ko) 2019-06-20 2021-05-24 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN113394067A (zh) * 2020-03-13 2021-09-14 Asm Ip私人控股有限公司 基板处理设备
CN114080662A (zh) 2020-06-16 2022-02-22 株式会社日立高新技术 等离子处理装置以及等离子处理方法
KR102600286B1 (ko) * 2020-11-30 2023-11-08 세메스 주식회사 플라즈마 공정 장치 및 이를 이용한 반도체 장치의 제조 방법
WO2022216419A1 (en) * 2021-04-07 2022-10-13 Lam Research Corporation Systems and methods for controlling a plasma sheath characteristic

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JPH01199430A (ja) * 1988-02-04 1989-08-10 Oki Electric Ind Co Ltd ドライエッチング方法及びその装置
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US5689215A (en) 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
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KR100525961B1 (ko) * 1996-11-04 2005-12-21 어플라이드 머티어리얼스, 인코포레이티드 플라즈마시스에서발생하는고주파를필터링하는플라즈마처리장치및방법
JP2893391B2 (ja) * 1996-11-21 1999-05-17 株式会社アドテック プラズマパラメータ測定装置
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
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Also Published As

Publication number Publication date
JP5334914B2 (ja) 2013-11-06
KR20020013841A (ko) 2002-02-21
US6265831B1 (en) 2001-07-24
KR100805138B1 (ko) 2008-02-21
EP1166322B1 (de) 2007-04-11
JP4601179B2 (ja) 2010-12-22
DE60034321T2 (de) 2007-08-30
TW466535B (en) 2001-12-01
WO2000058992A1 (en) 2000-10-05
JP2010251768A (ja) 2010-11-04
EP1166322A1 (de) 2002-01-02
JP2002540615A (ja) 2002-11-26

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