TW457674B - Aluminum leadframes for semiconductor devices and method of fabrication - Google Patents

Aluminum leadframes for semiconductor devices and method of fabrication Download PDF

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Publication number
TW457674B
TW457674B TW089102917A TW89102917A TW457674B TW 457674 B TW457674 B TW 457674B TW 089102917 A TW089102917 A TW 089102917A TW 89102917 A TW89102917 A TW 89102917A TW 457674 B TW457674 B TW 457674B
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TW
Taiwan
Prior art keywords
layer
tripod
nickel
aluminum
patent application
Prior art date
Application number
TW089102917A
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English (en)
Inventor
John P Tellkamp
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Texas Instruments Inc
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Publication of TW457674B publication Critical patent/TW457674B/zh

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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Description

457674 A7 Β7 經濟部智慧財產局員工消費合作社印制π 五、發明說明（1 ) 發明領域 本發明-般的相半導體裝置及處理的領域，更特 定於材料與積體電路裝置的腳架製造。 5 相關技藝的說明 半導體裝置㈣架是發日妹(美_專利編鮮遍764 號以及第4〇搬7號）同時滿足半導體裝置及其操作的幾 個需求：第一，腳架提供穩定的支撐墊來堅固的定位半導 體晶片’通常疋積體電路(1C)晶片。因為含塾的腳架是由 10導電性材料做的’此墊可加以偏壓，如果需要，到包含半 導體裝置的網路所需要的任何電位，特別是地電位。 第二，腳架提供複數個傳導性的段來將不同的電導體 放置緊靠著晶片。在(”内部的")段的尖端以及IC表面上的 導體墊之間剩餘的間隙通常由細金屬線橋接，個別的結合 15 1C接觸墊以及腳架段。明顯的，線結合的技術暗示可靠的 焊接可以形成在（内部的)-段尖端上。 第三，與1C晶片（”外部的，，尖端)相距很遠的導線段端 點需要電氣的以及機械的連接到”其他零件”或是"外面的世 界"，例如到組合印刷電路板。在壓倒性多數電子應用 20中，這項連接疋以悍接來完成的。明顯的，焊接的技術暗 示可靠的淋溼及焊接接觸可以在（外部的)段尖端上完成。 從溥（大約120到250 μιη)金屬片製作單一片腳架已經 是普遍實務。為了容易製作的原因，普遍選擇的起始金屬 為銅、銅合金、鎳鐵合金以及不變鋼。由鎳鐵合金(例如
89020A 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） (請先閱讀背面之注項再填寫本頁) 裝------訂--------祕· 457G74 五、發明說明（2) 所謂的”合金42”)做的腳架大約比銅腳架貴六倍。希望的 腳架的形狀以蝕刻或按模型切割而得。以此方式，腳架的 個別段採用薄金屬長條形狀，而特定的幾何形狀由設計決 定。為符合大多的需求，典型段的長度明顯的長於寬度。 5 半導體製造的降低成本壓力開始搜尋以較低成本的材 料取代銅及合金42的腳架基礎金屬。早期建議選擇的鋁 不能解決突破穩定的問題，無所不在以及幾乎即刻的銘氧 化物。在1976年1月13日發出的美國專利第3932685號 (Flowers 的”Aluminum Stabilization Process and Stabilization 10 Solution therefor") ’說明用來半導體裝置組裝期間的線結 合之鋁腳架準備處理；然而，並未陳述用在焊接附著的準 備鋁腳架的困難問題。 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 在1986年8月5曰發出的美國專利第4604169號不 鐘鋼的中的電鑛處理(Shiga及其他者的”Process for Metal 15 Plating a Stainless Steel”）不適用於銘及過量的氧化物層。 銀層乃在半導體產品所不希望使用的（1985年7月16曰發 出的美國專利第4529667號，Shiga以及其它者的 "Silver-Coated Electric Composite Materials")。由電鍵方法 達成的抗腐蝕-在1986年7月22日發出的美國專利編號 20 第 4601958(Levine 的"Plated Parts and their Production")以 及1989年5月30日發出的美國專利第4835067(Levine的 "Corrosion Resistant Electroplating Process, and Plated Article")並不能轉換到鋁，因為所建議保護層無法附著至 鋁；那些專利的以鐵為基礎的合金(合金42及Kovar)為昂 -4- 本紙張尺度適用中國國家標準（CNS>A4規格（2】0 X 297公釐） 經濟部智慧財產局員工消費合作社印製 457674 A7 _ B7 五、發明說明（3) 貴的腳架材料。 在1986年8月5曰發出的美國專利第4604291號中 的產生鋁被覆腳架方法（Huang及其他者的”Method for
Manufacture of Aluminum-Coated Leadframe”）需要有高真 5空並因而對大量生產而言是不實際的；也並未陳述焊接附 著的問題。 在1998年8月18日發出的美國專利第5795619號 (Lin 及其他者的"Solder Bump Fabricated Method Incorporate with Electroless Deposit and Dip Solder")中所說 10明在矽晶片的鋁墊上製造焊接突塊的方法採用由利用新置 換溶液在鋁上形成鋅層開始的處理流程。接著浸泡在含鎳 及銅的酸性亞硫酸鹽溶液產生鎳銅燐層在此鋅層上。利用 焊劑’接下來浸泡在焊接物溶液中形成焊接合金做為矽晶 片上的焊接突塊。用此方法產生的鎳層富含銅（最高到 15 74%權重的銅）而易碎；如果此層應用在腳架上，將不適 用’因為腳架必須承受在焊接到印刷電路板的附著前的贊 曲及形成接腳的要求處理步驟。這個形成步驟需要具延展 性的接腳。再者，所說明的技術，如果應用在腳架上，將 不提供接腳腐蝕的保護而也不建議在用在腳架囊封在需要 20金屬對塑膠附著，低機械應力及腐蝕保護的鑄造混合物中 的半導體產品。 對以低成本、可靠大量生產且具鋁基底，延展性接腳 及同時可焊接與結合表面的腳架的方法產生緊急的需求。 此腳架與其製作方法應有足夠彈性來應用在不同的半導體 表紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公爱） ί請先閱讀背面之注意事項再填寫本頁) -— — — —I — I I I I — I — I 1 ^ '457674 A7 B7 五、發明說明（4 ) 產品家族及廣泛的設計及組裝變異性，並應玎達成改善處 理產量與裝置可靠性之目的改善。最好，這些創新玎利用 已女裝設備基礎來完成，這樣就不需要投資新的生產機 器。 5 發明概要 根據本發明對於一半導體積體電路(ic)腳架，銘以及 鋁合金用來做為起始材料，接著連續的沈積層包含鋅（提 供對鋁及對鎳的附著），電解鎳（隔離鋅鹽酸與電鍍溶液）’ 10選項的鎳合金(提供防止腐蝕），電鍍鎳（提供延展性即可焊 接性）’以及最外面的，惰性金屬（隔離鎳表面與氧化物）。 本發明相關於高密度ICs，特別是有大量數目輸入/輸 出’或接觸墊的那些，以及需要表面附著在印刷電路板組 件的封裝内裝置。這些ICs可以在許多的半導體裝置家族 15中找到，例如標準的線性及邏輯產品、處理器、數位及類 比裝置，高頻及高功率裝置，以及大型及小型面積的晶片 種類。本發明表示半導體封裝的明顯成本下降，特別是塑 膠鑄模封裝，相較於傳統的銅或鎳鐵合金腳架。 本發明之一觀點在提供技術來修改以銘為基礎腳架的 20表面以同時提供延展性及可焊接性，而不需要昂貴的製作 處理。這個觀點藉由以捲轴對捲軸至做為基礎的大量生產 處理而達成。 本發明的另一個觀點是不花費設備改變及新資金投資 而且利用已安裝的製造設備基礎來達成這些目標。 (請先閲讀背面之注意事項再填寫本頁) 裝 ----ί — 訂---！1- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適財咖家標準（CNS)A4 297公爱） A7 B7 '457 6 7 4 五、發明說明（5) 本發明的另一個觀點是提供鋁腳架，如此以彎曲包裝 接腳及不需if·劑的焊接附著接腳部份（或只要非常輕微的 焊劑不需要沖洗步驟）為基礎成功的表面附著技術可以繼 續。半導體的最終使用者可以繼續採用已安裝的組裝設備 5 基礎。 本發明的另一個觀點是在微細間距結合定義的情形下 提供容易的可結合性。 本發明的另一個觀點是提供鋁腳架，所以可展現對使 用在塑膠封裝中的鑄模合成物的良好附著，因而防止溼氣 10 的進入與腐蝕，並也提供接腳的防止腐蝕。 這些觀點已由本發明敘示有關適於大量生產的材料選 擇及方法達成。不同的修改已被成功的採用。 在本發明的第一個具體實例令，鋁接腳是以藉由鎳與 連結電解鎳與電鍍鎳的貴金屬間的中間層所產生。 15 在本發明的第二具體實例中，鋁腳架的生產不需這個 中間層。 本發明代表的技術進步，以及其觀點，將從本發明的 較佳具體實例的下面說明變得明顯，在一併考慮到隨附圖 示及在後附申請專利範圍中描述的創新特色。 20 圖示簡述 圖I為根據本發明第一具體實例由鋁及連續的沈積層 做的腳架部份的概要橫切面圖。 圖2為根據本發明第二具體實例由鋁及連續的沈積層 本紙張尺度適用中_國家標準（CNS) Α4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
i — II I I 訂.I I I I ί I 經濟部智慧財產局員工消費合作社印製 457674 A7 B7 10 15 五、發明說明（6) 做的腳架部份的概要橫切面圖。 圖3為根據本發明焊接組裝在基質上的具有腳架的半 導體裝置的概要及簡化橫切面圖。 較佳具體實例的詳細說明 本發明相關於將半導體ICs組裝在腳架上，這些腳架 的基礎材料以及製造這些腳架的處理以使得它們適合於半 導體組裝的需求。在今天的技術中，半導體的腳架是用銅 合金或鎳鐵合金做的。這些材料密度高（且昂貴p例如， 銅的密度9.1 g/cm3而Young’s模數為120 X 103 N /mm2 ’而熱膨脹速率17·6 ppm/°C。這些特性促成兩個問 題： ♦腳架基底材料高質量及成本； *矽晶片上的高熱機械應力位準以及焊接點在附著板 之中的高熱機械應力位準。 本發明將這些問題減到最少，藉由用銘取代銅做為半 導體腳架的基底材料。表1收集銅的重要特性並將之與銘 的特性比較。 -ϋ I— at ϋ · ϋ _^i I 訂---------丨 (請先閱讀背面之1意事項再填寫本頁> 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中囤國家標準（CNS)A4規格（210 χ 297公釐） 467674 A7 Β7 五、發明說明（7) 表-1 屬 性 銅合金 鋁合金/ 密度(g/cm3) 9.1 ------- 2.8 〆 原始材料成本($/kg) 1.65 一---------- 1.32 〆 Young’s 模數 xlO (N/mm2) 120 72.5 / 最大張力（N/mm2) 550 410 _ 熱傳導(calcm/cm2s〇C) •625 ------------ .542 / 熱膨脹係數（ppm/°C) 17.6 24.7 _ 電化學電位（V) +0.52 — ---- -0.40」 經濟部智慧財產局員工消費合作社印製 ---— II !灯--- --- - - 如表1指示，密度及成本的優點額外的’而銘的較# 5 Young's模數有助於補償熱機械應力的較高的熱膨脈孫 數。在表1中銅及鋁的屬性比較顯示出鋁合金不只疋比銅 合金有效，並還有清楚的優點，特別有關成本（原始讨 料、重量、可鍛性等等）。粗略的，鋁的密度為銅的1/3， 並將減輕腳架基底材料的質量（重量)及成本。應力位乘在 10 鋁合金將會降低，因為熱膨脹係數乘以Young's模數小於 銅合金的。鋁的熱傳導近似於銅的熱傳導。假設典型的聊 架大小，鋁的較低電傳導擔任次級的角色，相較於不町避 免的傳導損失在薄的結合線。 本發明腳架的基底材料為鋁或鋁合金薄月，典塑的 15 100到250 厚度。這些薄片已經有量產的，例如，
Kaiser Aluminum 公司的"TennalunT部門，Jackson，TN， 美國。本發明的較佳材料是紹與猛的合金(3XXX系列，例 如3004，其中合金指定的位數指示出合金的調整）。其他 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公楚〉 A7 B7
10 15 20 457674 五、發明說明（8 ) 的合金與例如，銅、石夕、猛及辞一起製作。這些銘及銘合 金薄片以不同的熱歷程做調節，例如回火、退火或拉緊硬 化，結果會有不同的硬度。很重要的本發明目的為銘與銘 ΐ金少5到10%的延長以便滿足外部段形成的需 求，，'為製造流程的最後處理步驟。 鋁做的腳架遵循銅腳架的相同設計觀念：通常，晶片 墊用來支援由有内部尖端接近晶片塾及遠 外部 尖端的1C晶片。 再者，銘腳架，類似於銅腳架，必須滿 的五項需求： 1) 腳架必須包含外段线來焊接畴到其他零件； 2) 腳架必須包含内段尖端來結合附著到拉線； 3) 腳架必觀含外段延展性來形纽彎曲此段； 4) 腳架表面必須包含附著到鑄模合成物；以及 5) 腳架段必須包含對腐蝕的不敏感性。 根據本發明的教示，需求υ藉由沈積一層的錄以及最 ㈣的貴金屬在IS表面上來加以滿足。纽貴金屬在焊接 操作中溶解，此焊接接合處是用錄表面做的而不是基底的 銘。穩固时制馳基底㈣理是本發 (參閲下面）。 本發明藉由選擇採用來滿足需求υ的責金屬來滿足需 求2) ◊ 本發明藉域求丨)的料 來滿足3)。本發明的一烟重要部份，如下面所見到的、:需籌 本紙張尺度適用f國國家標準 J —II 1---I H ^---!1# (請先閱讀背面之注意事項再填寫本頁) -10- 4 5 7 6*4 經濟部智慧財產局員工消費合作社印制农 A7 B7 五、發明說明（9) 的，需要以選擇性的合金中間層分隔成為兩個鎳層，來 確保延展性。 本發明藉選擇採用來滿足需求1)的貴金屬層來滿足 需求4)。 5 本發明藉由在鋁基底上的沈積層順序滿足需求5)。 在圖1中，根據本發明腳架部份的概要橫切面圖一 般的標示為100。鋁合金基底薄片101的較佳厚度範圍從 100到250μιη ;更薄的片是可以的。這個厚度範圍的延展 性提供段彎曲及形成操作所需要的5%到15%延長。此鋁 10 合金薄片首先浸入20t到90°C的鹼性預清洗溶液幾秒鐘 到最多3分鐘。藉之移除油及其他的污染物。 在清洗後，此薄片接著浸入室溫的酸性催化溶液幾 秒鐘到最多5分鐘。此溶液包含硝酸溶液或硝/硫酸溶 液，最好是大約30 g/Ι到60 g/Ι的濃度。這個溶液移除鋁 15 氧化物而留下金屬的鋁表面在活化的狀態下，準備好接 受金屬鋅的沈積。 在鋅的沈積，活性的銘或紹合金薄片浸入在鋅酸 鹽，例如”Bondal"溶液，CanningGumm 公司，Kearny, NJ, USA所量產的。此鋅鹽酸最好為大約15°C到50°C ;此浸 20 入持續幾秒鐘到大約5分鐘，並可以重複在分別的暴露 中》此鋅層（圖1的102)可以只是薄膜，但應該無中斷的 覆蓋鋁表面。它的功能只是建立下面的鎳層到鋁的可靠 附著。 第一錄層103的沈積是重要的，如此沈積溶液才不 11- 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -----I--訂---------^ 457674 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 電化學的侵害鋅層^因此，第一鎳層必須以無電極電鍍法 鍍上，利用（更受控制及一致的）電鍍處理將損壞此鋅層。 大體上，此溶液介於-25及+60 °C而沈積持續從大約i到 10分鐘。以無電極電鍍法鍍上之鎳的厚度l〇3a最好在大 5約I25及750 nm之間，但非關鍵性。替代的，可以使用 驗性的有電極電鍍鎳製程。 在顯不在圖1中的本發明具體實例中，下一個沈積層 104為在鎳與從包含鈀、铑、金、銀及白金的群組所選出 的貴金屬間的合金，。此合金層以電鍍沈積並介於大約b 10到75 nm的厚度。其應該是附著的，因為它的主要目的是 防止腐蝕。以鎳/白金為基礎的合金層在1995年6月14 日發出的歐洲專利編號第0335608m號（Abb〇tt， "Leadframe with Reduced Corrosion”）中說明。 重要的105層是電鍍鎳，最好沈積厚度1〇5a大約在 15 〇·5到3 Mm。此鎳層必須有延展性以便可以適應腳架段彎 曲以及形成處理。再者，此錄表面必須在焊接處理中可以 弄溼的’如此焊接的合金或傳導性附著可以成功的使用。 兩鎳層以及薄鎳合金層的整個厚度106是在650到 4000 nm的範圍。 20 圖1中具體實例的最外層是107層，包含一從包含 把、姥、金及銀的群組所選出貴金屬電鍍層。如果希望其 與焊接物有最小的擴散，107層也可以包含白金。107層 的厚度最好在10及75nm之間；其主要目的在保護鎳表面 不致氧化。 -12- 泰紙張尺度適用中國國家標準（CNS)A4規格（2〗〇χ297公釐） -------------裝--------訂. (請先閱讀背面之注意事項再填寫本頁> 457674 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（n) 在顯示在圖2概要橫切面圖中的本發明具體實例中， 腳架的鋁基底合金101再次由鋅層1〇2所保護，然而，電 解鎳層103’緊接著電鍍鎳層1〇5;此鎳合金層被忽略。 鎳層103及105的結合厚度1〇8可以在600到4000 nm之 5間的範圍。貴金屬的薄層107再次形成最外層。 在圖3的概要橫切面圖，本發明的鋁或鋁合金腳架 301顯示應用在一般標示為300的半導體封裝的組裝中。 腳架301有一晶片附著墊302，在其上IC晶片3〇3利用黏 性材料304附著（通常是環氧基樹脂或聚硫亞氨，其必須 10承受聚合化學程序）。腳架301還有複數個接線段305。這 些接腳段有第一端點305a接近晶片附著墊302及第二端 點305b遠離附著墊302。 如圖3圖解的顯示，腳架3〇1包含用鋁或鋁合金做的 基底306。在這個鋁表面上的是一連續的層，在圖i及圖 I5 2中詳述的。最接近紹的是鋅層307。這個層接著第一層 的鎳，用鎳與惰性金屬做的合金層，以及第二層的鎳。圖 3中，這些三層被組合並一般標示為3〇8。最外層由 貴金屬做的。如圖1及2中強調的，這個層順序的優點為 段端點305b以及腳架被保護不致腐蝕。 20 如上述，這個順序的層提供可靠的線結合，用來連接 晶片接觸墊與腳架段，圖3中，接合拉線31〇有球3ΐι接 合到晶片接觸墊以及焊接到腳架段305的責金屬表面3〇9 的細線312。替代的，球結合或焊接結合可以用做此段的 接觸點。此結合拉線係從包含金、銅、紹及其之合金的群 -13- 本紙張尺度適用中國國表標準（CNSXA4規格do x 297公愛） II 丨丨丨丨！ II · I I I I I I 訂 — —— — — — I 1入 I (請先閱讀背面之注意事項再填寫本I> 467674 A? 五、發明說明
、，且中選出的。這些金屬的任_個均提供可靠㈣合接觸到 本發明的β鋁為基礎的腳架β 、如圖3中所不的，段3〇5的第二端點3〇%適合寶曲 以及成形’目為基底與電魏層的延祕。彻這個可 延展的特性，段305可以表面附著或任何半導體裝置的電 路板附著的其他技術所需要的任何形狀形成 。此段的彎曲 不會減弱第二段端點305b的腐蝕保護。例如，圖3指示 所'•胃的1¾翼形狀”的段305。廣泛的使用在IC封裝，以所 謂的”小外樞"組態’如圖3中說明的。 請 先 閱 讀 背 面 之
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I 訂 457 6 74 A7 _B7__ 五、發明說明（13) 明並不是架構在限制的意圖上。此說明性具體實例以及本 發明其他具體實例的不同修改及組合，對熟習本技藝的人 在參考此說明後將是很明顯的。如一範例，半導體晶片的 材料可以包含矽、矽鍺、鍺砷化物或任何其他用在製造的 5 半導體材料。另外一個範例，鋁或鋁合金腳架的製造方法 可加以修改，藉由沖洗步驟，重複沈積步驟或不同的材料 選擇來達成附著。因此企圖包含任何這種修改或隨附申請 專利範圍或具體實例。 ----------- -t--------訂. <請先閱1».背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐）

Claims (1)

  1. AS B8 C8 m 經濟部智慧財產局員工消費合作社印製 457674 六、申請專利範圍 專利申請案第89102917號 ROC Patent Appln. No. 89102917 修正之申請專0範圍中文本-附件二 Amended Claims in Chinese - Enel. II 5 ^{90 Ψ5 W iS — (Submitted on May (5 , 2001) 1. 一種與積體電路晶片一起使用的腳架，其包含： 一有著修改表面來提供對鎳的附著的鋁或鋁合金 10 基底；以及 一有著適合附著至鋁的第一表面以及適合提供可 烊接性的第二表面的延展性鎳層。 2. 如申請專利範圍第1項的腳架，其中該修改的鋁或鋁 合金表面還適合於拉線結合。 15 3.如申請專利範圍第1項的腳架，其中該鋁或合金基底 的厚度在大約100到250 μιη之間。 4. 如申請專利範圍第1項的腳架，其令該鎳層的厚度介 於 500 及 3000 rnn。 5. —種與積體電路晶片一起使用的腳架，其包含： 20 用有辞表面層的鋁或鋁合金做的一腳架基底； 在該鋅層上的第一層鎳，該第一鎳層沈積來與鋁 及鋅相容； 一層的鎳與貴金屬的合金在該第一鎳層上； 在該合金層上的第二層鎳，該第二鎳層沈積來適 25 合接線彎曲及焊接附著；以及 最外層的貴金屬，藉之該腳架適合焊接附著至其 他零件，適合拉線結合，以及適合防止腐蝕。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --I---- ----- ί;衣'-------訂---------'^ (請先閱讀背面之注意事項再填寫本頁) A8 B8 C8 Π8 457874 六、申請專利範圍 6. 如申請專利範圍第5項的腳架，其中該貴金屬層的厚 度介於10到250 nm之間。 7. 如申請專利範圍第5項的腳架，其中該合金層的厚度 介於25到75 nm之間。 5 8.如申請專利範圍第5項的腳架，其中該貴金屬從包含 金、銀、纪、鍵及白金的群組中選出。 9.如申請專利範圍第5項的腳架，其中該焊接附著包含 從包含錫/鉛混合物，錫/銦，錫/銀以及傳導性的附著 合成物之群組中選出的焊接材料。 10 10. —種與積體電路晶片一起使用的腳架，其包含： 用有鋅表面層的鋁或鋁合金做的一腳架基底； 在該鋅層上的第一層鎳，該第一鎳層沈積來與鋁 及辞相容； 在該第一層鎳上的第二層鎳，該第二鎳層沈積來 15 適合接線彎曲及焊接附著；以及 最外層的貴金屬，藉之該腳架適合悍接附著至其 他零件，適合拉線結合，以及適合防止腐蝕。 11. 一種半導體裝置，其包含： 一腳架，包含供積體電路晶片用的晶片附著墊以 20 及複數個接線段，其第一端點接近附著墊而其第二端 點遠離該附著墊； 用有鋅表面層的铭或紹合金做的，第一層的鎮、 鎳與貴金屬的合金層，第二層的鎳與最外層的貴金 屬； -17 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------ 奸衣-------1訂---------'^ (請先闓讀背面之;i-意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印*''衣 A8 B8 C8 D8 457674 六、申請專利範圍 一附著至該附著墊的積體電路晶片； 互相連接該晶片與該接線段的該第一端點的結合 拉線；以及 該接線段的該第二端點適合於彎曲，適合焊接附 5 著於其他零件，以及適合防止腐蝕。 12. 如申請專利範圍第11項的裝置，其中該結合拉線是從 包含金、銀、銅、鋁與其之合金的群組中選出的。 13. 如申請專利範圍第11項的裝置，其中接觸到該接線段 的該近距離端點的此結合拉線包含以球結合、細線結 10 合或楔形結合的焊接。 14. 如申請專利範圍第11項的裝置，還有包圍該附著晶片 的囊封材料，結合拉線及該接線段的近距端點，讓該 接線段的遠方端點暴露。 15. 如申請專利範圍第14項的裝置，其中該囊封材料是從 15 包含適合用來附著該腳架的以環氧基樹脂為基礎的鑄 模合成物群組中選出的。 16. 如申請專利範圍第14項的裝置，還包含該第二端點彎 曲的接線段，藉之該接線段取得適合用來焊接附著至 其他部份的形式。 20 17.如申請專利範圍第16項的裝置，其中該線段彎曲並不 會減弱該第二段端點的防止腐蝕。 18. —種製造腳架的方法，包含步驟： 提供有給積體電路晶片用的附著墊之鋁腳架以及 複數個接線段； -18 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------- 裝·-------訂·--------^ ** (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印制衣 KW 經濟部智慧財產局員工消費合作杜印製 4 A8 BS 67 4_S_ 六、申請專利範圍 以鹼性溶液清潔該腳架； 將該腳架浸入酸溶液中，以活化該腳架表面； 將活化的腳架浸入鋅鹽酸電鍍溶液中，藉之溶解 任何的鋁氧化物並形成鋅層； 5 將該腳架浸入無電極電鍍法的鎳電鍍溶液中並沈 積第一層的錄在該鋅層上； 電鍍一包含鎳與貴金屬之合金的層； 電鍍第二層的鎳，藉之使該接線段適合機械的彎 曲；以及 10 電鍍一層貴金屬，藉之使該接線段適合用來焊接 附著到其他部份以及適合腐蝕。 19.如申請專利範圍第18項的方法，其中該第二鎳層的電 鍵是在選擇可產生具機械延展性錦層的電流密度中執 行的。 15 20.如申請專利範圍第18項的方法，其中處理步驟沒有時 間延遲的連續執行，還包含中間的清洗步驟。 21. —種製造腳架的方法，包含步驟： 提供有供積體電路晶片用的附著墊的一鋁腳架以 及複數個接線段； 20 以鹼性溶液清潔該腳架； 藉由浸入該腳架至酸溶液中活化該腳架表面； 將活化的腳架浸入到鋅鹽酸電鍍溶液中，藉之溶 解任何的鋁氧化物並形成鋅層； 將該腳架浸入無電極電鍍法的鎳電鍍溶液令並沈 -19 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） ------------^衣--------訂---------轉 *· (請先閱讀背面之注意事項再填寫本頁) 457674 韻 C8 * D8 六、申請專利範圍 積第一層的鎳在該鋅層上； 電鍍第二層的鎳，藉之使該接線段適合機械的彎 曲；以及 電鍍一層貴金屬，藉之使該接線段適合用來焊接 5 附著到其他部份以及防止腐蝕。 ------------^衣--------訂---------#1 Μ* <請先閱讀背面之注意事項再填寫本頁) 經濟即智慧財產局員工消費合作社印製 ο 2 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐）
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