TW445601B - Die-embedded ball grid array packaging structure with leadframe - Google Patents

Die-embedded ball grid array packaging structure with leadframe Download PDF

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Publication number
TW445601B
TW445601B TW089100694A TW89100694A TW445601B TW 445601 B TW445601 B TW 445601B TW 089100694 A TW089100694 A TW 089100694A TW 89100694 A TW89100694 A TW 89100694A TW 445601 B TW445601 B TW 445601B
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Taiwan
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substrate
wafer
chip
grid array
ball grid
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TW089100694A
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English (en)
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Geng-Shin Shen
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Chipmos Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

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  • Wire Bonding (AREA)

Description

Λ 45 6 Ο ' 五、發明說明（ι) ' 發明領域： 本發明係有關於一種半導體裝置，特別有關於一種晶 片我入式球格陣列（Ball Grid array, BGA)封裝構造，用 以封裝銲墊位於中央之半導體晶片。 先前技術： 隨著更輕更複雜電子裝置需求的曰趨強烈，半導體晶 片的速度及複雜性相對越來越兩’而越複雜之半導體晶片 其所需之電性連接也越多。於是，半導想晶片封裝業界發 展出球格陣列封裝構造丨〇 〇。請參照第一圊，球格陣列封 裝構造100係將晶片112固設於一絕緣基板114之上表面， 該基板114之下表面係用以安裝至一電路板上。晶片丨12設 有複數個位在其周邊之銲勢（未示於圖中），用以電性連 接至晶片112之内部電路。該基板114之上表面設有複數個 銲墊116及導電線路，該複數個銲墊116及導電線路係藉由 連接線（bonding wires)118電性連接至該晶片112之晶片 銲墊。該基板114之下表面設有複數個錫球（s〇ider ba 1 1 s ) 1 1 9 ’使該封膠體可與外界電性溝通，並且由於錫 球可呈高密度陣列排列，所以可用以封襄需要大量電性連 接之晶片。該複數個録墊116及導電線路係藉由穿設於該 基板114中的導電通孔（vias)與該複數個錫球119電性連 接。一封躁體117以及該基板114共同密封該晶片η〗、該 複數條連接線18以及該複數個鲜塾及導電線路116 ,使其 與外界隔絕，而形成一球格陣列封聢構造丨0 〇 ^ 然而，第一圖所示之球格陣列封裝構造1 〇 〇只適用於封
• 44560 ^ 45 6 0 1___ 五、發明說明（2) 裝銲墊位在周邊之晶片（peripheral-pad design chip)， 因為若該晶片1 1 2之銲墊係位於其中央，則連接線11 8會變 得太長，而導致導電效能（electrical performance)降 低，以及伴隨電阻及訊號干擾增加之問題。 因而，業界發展出另一種封裝構造以克服前述問題。 請參照第二圖，一種改良封裝構造20 0在基板2 2 5設一槽縫 以供複數條連接線226通過，藉此該連接線226可以電性連 接該基板225至一銲墊位於中央之晶片224，但不會有前述 因連接線太長而導致導電效能降低，以及伴隨電阻及訊號 干擾增加之問題。然而，在該基板225之下表面必須設一 下封膠體2 2 8來密封該複數條連接線2 2 6使其與外界隔絕， 並且該下封膠體228在封膠製程（molding process)中很難 避免封膠溢料（f 1 a s h )之現象產生，所以必須以去溢料 (de-f lash)製程來清除封膠溢料或以複雜且昂貴之封膠方 法來防止溢膠，以免影響設於該基板225下表面之複數個 錫球220之銲料連接可靠性（s〇ider joint reliability)。 發明概要： 本發明之主要目的係提供一種晶片嵌入式球格陣列 (Ball Grid array， BGA)封裝構造，其包含一導線架用以 將一銲塾位於中央之晶片電性連接至一基板，藉此該基板 不需要具有槽縫供其電性連接，因此其製造不需要去溢料 製程》 根據本發明之晶片嵌入式球格陣列封裝構造，其主要
第5頁 445601 五'發明說明（3) 包含一基板、一導線架、一半導體晶片以及一封膠體包覆 該導線架以及半導體晶片使其與外界隔絕。該基板之正面 6史有一凹部用以容置該半導體晶片。該基板之正面設有複 數個基板銲墊（contact pads)，該基板之背面設有複數個 錫球，用以與外界電性溝通，該每一個錫球係分別電性連 接至相對應的基板銲墊。該半導體晶片具有複數個晶片銲 墊位於該晶片之上表面中央，用以電性連接至該晶片之内 部電路。該導線架包含複數條導線且具有内腳部分（inner lead portion)以及外腳部分（outer lead portion)，該 複數條導線之内腳部分以一絕緣層固設於該晶片之上表 面。該每一條導線之内腳部分係以連接線（bonding w i res)連接至相對應的晶片銲墊，該複數條導線之外腳部 分係電性連接至相對應的基板銲墊。可以理解的是，根據 本發明之晶片嵌入式球格陣列封裝構造可包含一個以上之 半導體晶片而形成一多晶片球格陣列（BG A )封裝構造。 根據本發明之晶片嵌入式球格陣列封裝構造，其基板 不需要具有槽縫也可用以封裝銲塾位於中央之晶片。由於 該半導體晶片係設於該基板正面之凹部，且該晶片係經由 在基板正面之導線架電性連接至該基板，所以該封膠體只 需包復該基板之正面，因此不需要去溢料（de-flash)製 程。此外，因為該晶片銲墊係經由該導線架之導線電性連 接至該基板’所以可避免因連接線（bonding wires)太長 而導致導電效能（electrical performance)降低，以及伴 隨電阻增加的散熱問題。
第6頁 445601 五、發明說明（4) 圖示說明： 為了讓本發明之上述和其他目的、特徵、和優點能更 明顯特徵，下文特舉本發明較佳實施例，並配合所附圖 示，作詳細說明如下。 第1囷：習知球格陣列封裝構造之剖面圖； 第2圖：另一習知球格陣列封裝構造之剖面圖； 第3圖：本發明之第一較佳實施例之剖面示圖； 第4圖：根據本發明之第一較佳實施例尚未進行注膠 封裝前之示意圖；及 第5圖：本發明之第二較佳實施例之剖面示圖； 第6囷：根據本發明之第二較佳實施例尚未進行注膠 封裝前之示意圖。 圖號說明： 100 習 用 球 格 陣 列封 裝構造 112 晶 片 114 基 板 116 銲 整* 117 封 膠 體 118 連 接 線 119 錫 球 200 封 裝 構 造 224 晶 片 225 基 板 226 連 接 線 228 下 封 膠體 310 基 板 312 凹 部 314 晶 片 承 座 316 基 板 銲 墊 318 錫 球 330 導 線 架 332 導 線 3 3 2a 内 腳 部 分 3 3 2b 外 腳 部 分 334 絕 緣 層 336 連 接 線 338 τ^τ 溫 銲 錫 350 半 導 體 晶 片
第7頁 :^ 4456 五、發明說明（5) 3 5 2 晶片銲墊 354 銀膠 3 7 0 封膠體 發明說明： 請參照第三圈以及第四圖，其係根據本發明之第一較 佳實施例’其主要包含一基板310、兩導線架330、兩半導 體晶片350以及一封膠體370包覆該導線架330以及半導體 晶片350使其與外界隔絕。該基板310之正面設有一凹部 312用以容置該半導體晶片350。該基板310之凹部312較佳 設有一晶片承座314以增加該基板310之剛性（rigidity)。 該基板310之正面設有複數個基板銲墊316(contact pads)，該基板31 〇之背面設有複數個錫球3 1 8，用以與外 界電性溝通’該每一個錫球3 18係分別電性連接至相對應 的基板銲墊316。該半導體晶片350具有複數個晶片銲墊 352位於該晶片350之上表面中央，用以電性連接至該晶片 之内部電路。該半導體晶片3 5 0之下表面係以黏著劑（如 銀膠3 54)固設於該晶片承座314 »該導線架330包含複數 條導線332且具有内腳部分（inner lead portion)332a以 及外聊部分（outer lead portion)332b，該複數條導線 332之内腳部分332a以一絕緣層334固設於該晶片350之上 表面。該每一條導線332之内腳部分332a係以連接線336連 接至相對應的晶片銲墊35 2，該複數條導線332之外腳部分 332b係以高溫銲錫338連接至相對應的基板銲墊352 ^可以 理解的是，該複數條導線之外腳部分亦可先以不導電膠例 如環氧樹脂（epoxy)固設於該基板之正面，再以連接線
第8頁 4456 ο ) 五、發明說明（6) (bonding wires)連接至相對應的基板鲜塾。 請再參照第三圖，該基板31 〇係以不導電材質[例如 FR-4玻璃環氧樹脂（glass-epoxy)或聚醢亞胺 (polyimide)]製成。該晶片承座314以及導線架3 3 0較佳係 由銅、鐵、鎳或其合金製成。此外該複數條導線3 32可以 鍍上一層高導電物質例如銀、銅、金或鈀。該絕緣層334 係為三層構造，其包含一聚醯亞胺（polyimide)基層夾在 兩熱可塑（thermoplastic)膠層間，其可事先藉由一熱壓 機（heater press)加熱加壓後，再黏貼至該複數條導線 332之内腳部分332a以及該晶片350之上表面。該複數條連 接線3 36可以一打線機將其分別連接至每一條導線33 2之内 腳部分332a以及相對應的晶片銲墊352 〇該高溫銲錫338 — 般係為高船銲錫材料（high lead solder material)，較 佳為5%錫及95%鉛。錫球318係以共晶銲錫材料（eutectic solder material)形成，較佳為63%錯及37¾錯。該封勝體 3 7 0之材質係為絕緣材料，較佳之塑料（mol ding compound)為 Hitachi Chemical Company 提供之 CEL-9200XU 塑料。 請再參照第四圖’其係本發明第一較佳實施例尚未進 行注膠封裝前之示意圖’其中該兩半導體晶350係為彼此 直列。此外’用以接合該複數條導線之内腳部分至該晶片 之上表面的絕緣層3 3 4係被沿著該複數條導線3 3 2之内腳部 分332a切割成梳子狀。因為該絕緣層334之熱膨脹係數 (thermal expansion c oe f f i c i en t)與該複數條導線 3 3 2 及
第9頁 '44560] 五、發明說明（7) 晶片3 5 0差異極大，所以該絕緣層3 34之接合面積越大則越 易因長期溫度差異造成的熱脹冷縮而脫落。因此，將該絕 緣層3 34沿著該複數條導線3 3 2之内腳部分33 2a切割成梳子 狀可以減少其接合面積，因而可降低其分離之機率。 請參照第五圖以及第六圖，其係為根據本發明之第二 較佳實施例，其主要包含一基板3 1 0、兩導線架3 3 0、兩半 導體晶片3 5 0以及一封膠體3 7 0，其中該每一半導體晶片 350係為並列。該基板310之正面設有兩凹部312用以容置 該半導體晶片3 5 0。根據本發明之第二較佳實施例，除了 該每一半導體晶片350以及該每一導線架330係為並列之 外，其餘之結構以及連接關係大致類同於第一較佳實施 例。 根據本發明之晶片嵌入式球格陣列封裝構造，其基板 不需要具有槽縫也可用以封裝銲墊位於中央之晶片。由於 該半導體晶片係設於該基板正面之凹部，且該晶片係經由 在基板正面之導線架電性連接至該基板，所以該封膠體只 需包覆該基板之正面，因此該基板之背面不會有溢料情形 產生，所以不需要去溢料（de-flash)製程來確保設於基板 背面之複數個錫球的鲜料連接可靠性（solder joint rel i abi 1 i ty) »此外，因為該晶片銲墊係經由該導線架之 導線電性連接至該基板，所以可避免因連接線太長而導致 導電效能降低，以及伴隨電阻增加的散熱問題。（因為如 果沒有導線架且基板不開槽縫，則銲墊位於中央之晶片必 須直接以連接線電性連接至基板，則其連接線會變得太長
，.4456。445 6 01 五、發明說明（8) 而導致導電效能降低，以及伴隨電阻增加的散熱問題）。 雖然本發明已以前述較佳實施例揭示，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作各種之更動與修改。例如根據本發明之 晶片嵌入式球格陣列封裝構造，其雖然以包含兩個半導體 晶片之多晶片球格陣列封裝構造為較佳實施例，然而可以 理解的是根據本發明之晶片嵌入式球格陣列封裝構造其也 可只包含單一個半導體晶片或是兩個以上之半導體晶片。 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。

Claims (1)

  1. 445601 t、申請專利範圍 1 、一種具有導線架之晶片嵌入式球格陣列封裝構造，其 係包含： 至少一半導體晶片，具有一上表面以及一下表面，該 晶片具有複數個晶片銲墊位於該晶片之上表面中央用以電 性連接至該晶片之内部電路； —基板，具有正面以及背面，該基板之正面至少設有 一凹部用以容置該至少一半導體晶片，該基板之正面設有 複數個基板銲墊，該基板之背面設有複數個錫球用以與外 界電性溝通，該每一個錫球係分別電性連接至相對應的基 板銲墊； 一導線架，包含複數條導線具有内腳部分以及外腳部 分，該複數條導線之内腳部分係以一絕緣層固設於該晶片 之上表面，該複數條導線之外腳部分係以不導電膠固設於 該基板之正面，該每一條導線之内腳部分電性連接至相對 應的晶片銲墊，該每一條導線之外腳部分電性連接至相對 應的基板銲墊；及 一封膠體包覆該至少一半導體晶片以及導線架使其與 外界隔絕"
    445601 六、申請專利範圍 造，其中該基板之凹部係設有一晶片承座，該每一半導體 晶片係固設於該晶片承座。 4 、依申請專利範圍第1項之晶片嵌入式球格陣列封裝構 造，其包含至少兩半導體晶片以及兩導線架，其中該每一 半導體晶片係為彼此直列。 5 、依申請專利範圍第1項之晶片嵌入式球格陣列封裝構 造，其包含至少兩半導體晶片以及兩導線架，其中該基板 係設有相對應數目之凹部用以容置該半導艎晶片，且該每 一半導體晶片係為並列。
    第13頁
TW089100694A 2000-01-17 2000-01-17 Die-embedded ball grid array packaging structure with leadframe TW445601B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237249B2 (en) 2009-03-27 2012-08-07 Chipmos Technologies Inc. Stacked multichip package
TWI705543B (zh) * 2015-10-23 2020-09-21 日商新光電氣工業股份有限公司 引線架及其製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237249B2 (en) 2009-03-27 2012-08-07 Chipmos Technologies Inc. Stacked multichip package
TWI705543B (zh) * 2015-10-23 2020-09-21 日商新光電氣工業股份有限公司 引線架及其製造方法

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