TW440899B - Micro-electronic structure, its method of manufacturing and its application in a memory device - Google Patents

Micro-electronic structure, its method of manufacturing and its application in a memory device Download PDF

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Publication number
TW440899B
TW440899B TW88121681A TW88121681A TW440899B TW 440899 B TW440899 B TW 440899B TW 88121681 A TW88121681 A TW 88121681A TW 88121681 A TW88121681 A TW 88121681A TW 440899 B TW440899 B TW 440899B
Authority
TW
Taiwan
Prior art keywords
oxygen
substrate
layer
binding material
microelectronic structure
Prior art date
Application number
TW88121681A
Other languages
English (en)
Chinese (zh)
Inventor
Hermann Wendt
Gerhard Beitel
Hans Reisinger
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of TW440899B publication Critical patent/TW440899B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
TW88121681A 1998-12-17 1999-12-10 Micro-electronic structure, its method of manufacturing and its application in a memory device TW440899B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1998158357 DE19858357A1 (de) 1998-12-17 1998-12-17 Mikroelektronische Struktur sowie Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
TW440899B true TW440899B (en) 2001-06-16

Family

ID=7891495

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88121681A TW440899B (en) 1998-12-17 1999-12-10 Micro-electronic structure, its method of manufacturing and its application in a memory device

Country Status (3)

Country Link
DE (1) DE19858357A1 (de)
TW (1) TW440899B (de)
WO (1) WO2000036636A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3581904B1 (de) * 2018-06-15 2021-06-02 Melexis Technologies NV Platinmetallisierung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348894A (en) * 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
EP0972309A1 (de) * 1995-06-28 2000-01-19 Telcordia Technologies, Inc. Sperrschicht für auf silizium integrierte ferroelektrische speicheranordnung
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
JP3454058B2 (ja) * 1996-12-11 2003-10-06 富士通株式会社 半導体メモリおよびその製造方法
KR100243285B1 (ko) * 1997-02-27 2000-02-01 윤종용 고유전 커패시터 및 그 제조방법

Also Published As

Publication number Publication date
DE19858357A1 (de) 2000-06-29
WO2000036636A2 (de) 2000-06-22
WO2000036636A3 (de) 2000-08-10

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