TW436760B - Magneto-optical storage medium with double mask - Google Patents
Magneto-optical storage medium with double mask Download PDFInfo
- Publication number
- TW436760B TW436760B TW088110609A TW88110609A TW436760B TW 436760 B TW436760 B TW 436760B TW 088110609 A TW088110609 A TW 088110609A TW 88110609 A TW88110609 A TW 88110609A TW 436760 B TW436760 B TW 436760B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- layer
- magnetic
- magnetic layer
- compensation
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000001419 dependent effect Effects 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 32
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 101100206196 Arabidopsis thaliana TCP3 gene Proteins 0.000 claims 1
- 101100260060 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CCT3 gene Proteins 0.000 claims 1
- 235000013405 beer Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 101100110331 Mus musculus Adamtsl2 gene Proteins 0.000 abstract 2
- 101150077085 TCP1 gene Proteins 0.000 abstract 2
- 230000005415 magnetization Effects 0.000 description 57
- 238000000034 method Methods 0.000 description 12
- 238000001816 cooling Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910000691 Re alloy Inorganic materials 0.000 description 3
- 229910000767 Tm alloy Inorganic materials 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000982 rare earth metal group alloy Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10584—Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10502—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
- G11B11/10504—Recording
- G11B11/10506—Recording by modulating only the light beam of the transducer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10502—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
- G11B11/10515—Reproducing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10502—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
- G11B11/10517—Overwriting or erasing
- G11B11/10519—Direct overwriting, i.e. performing erasing and recording using the same transducing means
- G11B11/10521—Direct overwriting, i.e. performing erasing and recording using the same transducing means using a single light spot
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
Description
436760 A7 B7 五、發明說明(1〉 本發明關於磁性光學儲存媒體供高密度資訊之窝入及讀 取’該媒體包括一基板低磁層以以讀取資訊,第二磁中間 層及第三磁層以儲存資訊,第二層之居里溫度低於第—及 第三層之居里溫度。 磁性光儲存媒禮可使大批資料之經濟儲存及輸送。其可 以磁性儲存之永久性及易擦性結合高位元密度及光資料記 錄之資料統合=在傳統之磁性儲存媒體中,資訊之儲存係 以不同磁化區之順序,即以磁域圖暗。磁性光學儲存媒體 之特性爲極度可靠,迅速及無限之再寫入能力α 經濟部智慧財產局員工消費合作社印製 結合磁場效應及雷射之熱效應可將資訊寫入磁性光學儲 存媒體中。雷射光將儲存媒體之局部區加熱,而磁場之方 向在此區域〇磁化方向與所加磁場之局部區加熱。讀出由 一雷射爲之但以較低之強度爲之。反射或發射之光之極化 方向與相關位置之磁化有關^極化之變化可以測量’及再 產生處存之資訊。實際上,磁物質及極化之雷射光間之相 互作用被稱爲柯爾效應(反射),或法拉第效應(輸送)。磁性 光學儲存媒體應有高資料密度,高寫入靈敏度及高讀出準 確性。磁光學媒體之可達成之最大資料密度受限於磁之最 小尺寸及雷射光系統之光解析度之限度。因爲磁減之最小 尺寸較傳統之肥射光系統之工解析度,j、許多,與所用之雷 射光系統之波長成正比例,儲存密度最後受雷射光系統之 解析度所限制。 與光學相位改變儲存媒體相反,也磁性光學儲存媒體而 言,利用搞合層系統交換及利用雷射束所生之媒體之度 -4- 本紙張尺度適用中國國家標準(CNS)A4規格(2〗0 X 297公藿) 436760
、發明說明 (2 Άΐϋ級解析度可以達成。此-職方法可使讀出 位元,除虑进度高於雷射光系統之相對解析度,因爲所有 =可2理之電流位元外,均位於磁屏蔽之下。結果 出 #雷射光系㈣目對解析度之密度之資料密度讀 之硬體外’尚企圖進—步增、加資料密度及降低驅動機所需 —EP G 686 97G專利揭示―磁性光學儲存媒體中包 :基板’第-磁層堆在基板上以便再生資料,第二磁層 登在第一磁層上以便儲存資料,及$三層酉己置在第—及 =一磁層之間’其居里溫度低於第-及第二磁層之居里溫 第三磁層爲鄰之一區之第一磁層之一區之磁化方向 在恤度等於或高於第三層之居里溫度時,爲與第一磁層 相鄰之一區之磁化方向。 。本發明之目的爲提供一磁性光學儲存媒體,其可有高信 號解析度及高資料密度。 松據本發明,此目的係由—磁性光學儲存媒體達成,其 可在高於室溫Ta之寫入溫度TWT ’或者二溫度Th,1作 重復< 資訊寫入,及以高出室溫Ta之溫度Tf下之前屏蔽及 恤度爲Tr之後屏蔽來在外磁場He中作重復讀取(溫度Tm下) ;該媒體包括一基板’配置在基板上之第—磁層,及有— 溫度相關矯頑磁力Hd(T),補償溫度Tcpl及居里溫度TC1 ’及堆疊在第一磁層上之第二磁層,及有一溫度相關矯頭 磁力HC2(T),補償溫度Tcp2,及居里溫度Tc2,及堆疊在第 二磁層上之第三磁層,其有一溫度相關矯頑磁磁力hc3(t) -5- 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 裝--------^---------^ Γ清先閱讀背面之注秦JS%寫本I > 經濟部智慧財產局員工消費合作社印製 436760 A7 經濟邨智慧財產局員工消費合作社印製 五、發明說明(3 補償溫度TCf>3,及居里溫度,其中 < Tf < TmSTcpi<Tcp2 < Tc2 < τ 及
Hcl(T) < He 時 Ta < τ <
Hc2(T) < He 時 Ta < τ < Tm Hc3(T)>He 時 T < Tw 由於改進之磁性光學效應本發明之磁性光學儲存媒體之 特性局高k麵波。#出層之磁特性在讀出點劇烈改變 ’及在由超磁解析方法讀出期間,在不同之磁構型間產生 適當限定之轉移。 本發明之磁性光學儲存媒體之較佳實施例之特徵爲,其 包括一第四磁層堆疊在第三磁層上,及有一溫度相關矯頑 磁力Hc4(T),補償溫度Tcp4,居里溫度Tc4,及寫入溫度ΤΊ ,Th,其中
Ta ^ Tf < Tm^Tcp|<Tcp2 ^ TC2 < Tr < Tel < Tcp3^TCp4 < Tc3 < T, < Tc4STh 及 HC4(T) < He 時 Ta < T < Tm 及 TSTh 本發明之此一儲存媒體之實施例適於以LIMD0W(雷射 強度調變直接修改)之方法寫人,其中I雷射束決定最=磁 化方向。新資料在-通過時直接寫入舊資料上’而不需在 個別寫入週期擦拭舊資料。因此可減少寫入週期。磁’&光 -6 - 大纸張尺度家標準(CNSM4現格(210 X 297公釐) — Ι1ΙΪΙΙΙ --------------- (請先閱讀背面之注意^-¾ 填寫本1) 436760 A7 B? 五、發明說明(4 外 學驅動機在二實施例中均可有一簡單結構,因僅驚 場供窝入及讀出之用。 本發明將以四圖式及二實施例予以詳述。 '邀輯 圖1爲本發明一磁性光學儲存媒體實跑例2讀取” 信號期間之構型, 圖2爲讀取”邏輯0"信號時之構型, 鱿時 圖3爲磁性光學儲存媒體之實施例2寫入,,邏輯〗 之構型, 圖4爲寫入”邏輯〇”信號之構型。 本發明之磁性光學儲存媒體之第一實施例包括—基板及 二磁層,安排成一個在另一之上。其尚包括一或多個非磁 層供改正保護’耦合光之反射及熱擴散。 第磁層稱爲磧取層1 ’弟二磁層稱爲中間層2,第― 磁層爲記憶體層3。 — 經濟部智慧財產局員工消費合作社印製 讀取層配置在透明基板上,俾其面對雷射讀取頭。在讀 取t瞬間,即在讀取點之中央區之溫度爲,及在磁場札 之驅動磁鐵之影響圍内,其攜帶自記憶體層讀取之資訊於 雷射束涵蓋之小型子區中。在此子區之外,但仍然在驅動 磁鐵影向區内,讀取層在外磁場之方向被均勻磁化,產生 一永久時間常數信號。因此,其不攜帶信號資料=在驅動 磁鐵影響區之外’其含與記憶體層相同之信號資料。 在凟取瞬間,即在讀取點之中心區及驅動磁鐵之影響 區二中間層自記憶體層轉移信號資料至讀取層。記憶體層 與咕取屬間之磁耦合在讀取點前及後區被中斷。 JS)A4 規格(210 X 297 公爱) 436760 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(5 ) 記憶體層爲儲存信號資料之一層。在讀取作業期間,在 其它層改變與溫度及外磁場相關之磁化性質時,其可儲存 資訊。 其次’本發明磁性光學儲存姑體之第二實施例包括一基 板及四個磁層,其安排成一個在另一個之上。除讀取層, 中間層及記憶層外,此實施例尚含一參考層4。 參考層在以LIMDOW方法寫入時,有一功能。其有一高 補償點及高居里點。在以LIMDOW方法寫入時,理想之磁 化以高溫加在參考層上,以此高溫’其他三層被中和;其 在較低溫度將此磁化傳下,而與外磁場無關。 磁層由磁性光學材料組成,其具有早抽各向異性,有 一較佳磁方向與層表面垂直延伸,及溫度有關之矯頑磁力 Hc及飽和磁化Ms,並能次分爲磁域。 較佳之磁性光學材料爲稀土金屬(RE ·· Gd,丁b,Dy) 之非晶合金及轉換金屬(TM : Fe,Co),例如,GdCo, GdFe,TbFe,GdTbFe或GdTbFeCo。爲額外之居里溫度 調整’額外之Si可加入RE/TM合金。此等RE/TM合金爲 磁性亞鐵。其磁特性可稱爲RE及TM成份磁炬之向量增加 ,彼此反平行耦合。合金之淨磁化係由RE與TM成份之和 所產生。 RE及TM之磁矩之降低係以溫度爲函數是不同的,此乃 爲何淨磁化之符號可能因溫度而改變。在較低溫度,RE 成份磁化較TM成份在較高溫度之磁化更爲重有^有—特 性溫度,即所謂補償溫度Tcp,在此溫度時淨磁化量爲零 ----------I---裝----- I--訂----- --線 f請先閱讀背面之注意事項ΐ填寫本頁) 4367Sg A7 五、發明說明(6 -IIIIIIIIII1I — - 11 (請先閱讀背面之注音爹卢填寫本頁) ,因爲在此溫度時,其等於Mre = _M頂。上述補償溫度中 ,淨磁化之符號改變直到居里溫度Te,二成份之磁矩之方 向消失,此乃由於熱動作而引起,淨磁化再度降低爲零。 在補償溫度時,矯頭磁力比趨向接近無限大,此乃由於外 加磁場不能與任何外部有效磁化相互作用之故。另一方面 ,在低於居里溫度之下,—弱磁場亦足夠將磁化反轉。因 此,亞鐵磁RE/ΤΜ合金有一高矯頑磁力於補償溫度之附近 ,及低矯頑磁力於居里溫度附近。一磁性光學信號亦在補 償點產生,因爲柯爾效應或法拉第效應未由材料之淨磁化 所產生’但僅由典型雷射波長時之ΤΜ成份所產生。 但在本發明之各層中,不僅—層中之RE及ΤΜ成份間有 核&存在,並存在於二層之間,及在一側之RE成份與另 一側之ΤΜ成份之間。層間之耦合被稱爲磁交換耦合。 -線· 當二層均被一固定溫度時之同一成份所支配時,二成份 之磁矩及一淨磁化Ms將在基本狀態下成平行導向。各層 稱爲平行耦合。如一層被某一溫度之R£成份所磁支配, 經濟部智慧財產局員工消費合作社印製 另一層由TE成份所支配時,在基本狀態中,二成份之磁矩 均爲平行導向’但二層之淨磁化Ms則彼此反平行,此等 層稱爲”反平行耦合’%當二層之平行淨磁化加在反平行柄 合層時,二成份之磁矩將彼此相反。結果,儘管有平行淨 磁化’在二層之間形成一水平介面壁(水平布洛赫壁),RE 及TM磁矩在該介面壁中180度旋轉。此介面壁包含一額 外能量分布,其被稱爲耦合能量或介面壁能量,其中, Hw = ow/2Mst,其中之Hw,Μ及t爲與壁能量對應之場強 -9 - 本紙張疋度適用中國國家標準(CNS)A4規格(210 X 297公釐) 436760 經-部智慧財產局員工消費合作钍印製 A7 ________B7_____ 五、發明說明(7 ) 度,飽和磁化及層厚度^ 在RE/TM層之補償點附近,該層實際上不受磁場之影響 。但如一水平介面壁存在於此RE/TM層及第二RE/ΤΜ層 之間,一層之磁化亦可在其補彳貧點附近反應轉,如介面之 消滅所釋放之能量在磁化反向期間夠大時,可對外磁場相 反0 本發明之磁性光學儲存媒體之磁層可用自rE/tm目標之 RF潑濺而沉積在基板上。磁層之補償溫度及居里溫度可由 改變層中RE及TM相對量而予以調整。耦合能量可被層之 成份,保護氣體之部份壓力,在潑濺處理期間施加磁場及 改變等離子程序之參數等受到影響。 各層亦可由熔融快速冷卻或基本成份之同時蒸氣化形成。 基板可含光透明介電材料,如玻璃’壓克力破璃或综合 材料如聚碳酸酯或其他聚合料。爲增加光學特性及防止腐 姓’磁性光學儲存媒體可包括介質材料之更多層,例如Si3N4 ’ AIN ’ SiO ’ SiOx ’ 2nS或MgF2。儲存媒體亦可含反射 層以反射雷射光及消耗熱。 實施例1 磁性光學儲存媒體之第—實施例包括透明基板面對雷射 ’其上備有三磁層’即讀取層1,中間層2及記憶體層3。 三層之補償及居里溫度如下式:
Ta < Tf < Tm<Tcp,<Tcp2 < xc2 < Tr < Tcl < Tcp3 < Tc3<Tw 及
Hcl(T)< ^^時 Ta < T < T„ -10 - m ιι! m s 家鮮(cnsw4 祕~~ 一 I n ί I i ^ t— ϊ I 1 I* I · > f I I I ϋ I ^eJ« n at ·1 If ·1 1· I 2靖先閱讀背^<;i意事項两填寫本頁) 436760 A7 B7 五、發明說明(β ) --------------裝— (請先聞讀背面之注意事JB填寫本頁) hc2(t)< 只6時 Ta < T < Tm hc3(t)>hc 時 T < Tw 在此磁性光學儲存媒體上寫入可用通常使用之磁性光學 儲存媒體之方法爲之。例如一雷射將一區,即儲存媒體之 一域加熱至Tw »由於各層之墙頑磁力在其居里溫度降低, 加熱區之磁化可由一小磁場加以反轉。當第一次寫入期間 ’存在之資訊由均勻之磁化在與磁層平面垂直與磁場平行 之方向被擦掉。在第二寫入通過期間,磁場之方向反轉。 磁性光學之局部區由雷射脈衝加熱,其磁化之方向改變爲 與第一磁化方向之反平行之方向。儲存媒體於是含二進位 資訊。 線· 經濟部智慧財產局員工消費合作社印製 儲存在本發明之磁性光學儲存媒體之資訊由MSR方法 讀取,該法係在讀取期間利用雷射施以中度加熱,在讀取 點之中心有一窗之前屏蔽及後屏蔽在中間層形成。在前後 屏蔽區’讀取層之方向均勻的與外磁場平行。讀取機構利 用同一磁場He與寫入機構相同。:MSR讀取方向利用由雷 射束在儲存媒體中產生,及讀取頭與儲存媒體相對運動之 結果,及媒體之熱傳導率等之溫度分布e二機構之合作產 生讀取點之一摘圓溫度分布’該分布在輸送方向觀之,在 讀取點之後側,與讀取點相關,有—非中心溫度最大値。 讀取點在其前面有一低溫度T f ’在中心區有一中間温度, τπι,及其後部之溫度Tr。 在讀取信號”邏輯0"期間,該期間各層之磁化方向與外磁 場平行’三磁層之磁化狀態不改變,直到以"邏輯〇 ”之寫入 -11 - 本紙張尺度適甲t國國家標準(CNS)A4規格(210 X 297公釐) 436760 A7 B7
| k 冬 頁 I I I I 請 先 閱讀 背 面 之 注意事. J5 線 4 3 6760 經濟部智慧財產局員工消費合作社印*1^ A7 B7 玉、發明說明(1〇 ) 行。層3爲實際記憶體層,仍保留其磁化方向爲與Η成反 平行*因爲其在室溫時有極高矯頑磁力。結果,在此層與 相鄰之層2間形成一水平介面壁。爲使層3保留其磁化方 向’矯頑磁力能量Ec;i必須大於壁能量〇^,3加上外磁場中 之塞曼能量。 因Ta<T<Tm,因此下式成立:
Ec3 > 2HeMs3t3 + aw2,3 下式亦成立:
Ec] + Ec2 + ow2;3 < 2HeMslti + 2HeMs2t2 在溫度範圍Ta< T < ,讀取層及中間層,其方向 爲與外磁場平行,將記憶體層之資訊孱蔽。 在層1及層2之補償溫度附近,橋頑磁力向無限大增加 ,外磁場不能影響此等層之淨磁化之方向《但如圖1所示 ,層1及層2之磁化可由與相鄰記憶體層3交換耦合而予 以反向,其所需之能量可自已被消滅之介面壁導出。層2 之單獨磁化反向而維持層1之磁化方向,及配合層1及層2 間之介面壁之形成,需要較層1及層2同時磁化反向所需 之能量爲多。因此,層1及層2之淨磁化將被導向與外磁 場反平行。 因Tm;STep2 ’下式成立:
Eel + Ec2 < 〇w2,3 < CT'vl,2 在層1及2之補償溫度時,層1,2及3之RE及TM成 -13- 本紙張尺度適用1ί7國國家標準(CNS)A4規格⑵0x297公愛) --------------裳----1---—訂---------線 ί請先閱讀背面之注辛苯爲蜞寫本頁) 43 676 0 經I財產局員工消費合2印以 本 A7 五、發明說明(μ ) 份之磁化因而被導向平行。4 度範圍載有資訊,•邏輯丨”1 丁,。崤取層因此在讀取點之中間溫 其居里溫度Te2。 '自層2之補償溫度Tcp2延伸至 在雷射之熱區,層2之居 不變。RE及TM成份之方。:度超過,但層1之磁化方向 平行構成後屏蔽。讀取:向二保持相同。與外磁場之磁化 式成立: 义‘,'、區中之後屏蔽之面積言,下 STm<T<Tr:
Eci + < 2HeMslt, 因Tc2 < 丁 < Tf,下式成立:
Ec] < 2HeMs11j 在進一步作業中’磁域龅門今扮、 Η η Λ 飞離開靖取點之熱區及再廑Α彻, 層2於是被導向與外磁 夂再度冷卻 低至声1及於 田近一步冷邻期間,溫度降 -曰及補仏,點以下,而不在外磁場之 層丨及2之淨磁化之方向之 牵圍争, 〜π ώ 门《付號相反。結果,在層】及2之 補心皿度以下,再度達到原始狀態,其中,所有各層之方 向均爲與外磁場成反平行。 實施例2 本發明之磁性光學存儲媒體之第二實施例包括一基板 四㈣層安排成一個在另—個之上’及一或多個非竣層。’ 除謂取層,中間屢及記憶體屬之外,儲存媒體之實施例包 括-參考層4。磁性工學儲存媒體之實施例可以 -14-
436760 A7 B? .'iR 4 Μ I" 智 產 Mj 消 f 合 五、發明說明(12 ) 方法寫入。符合LIMDOW方法之寫入可使在驅動磁鐵之外 磁場中之一次通過不會使磁場反向。由雷射光點產生之聚 焦點之溫度輪廓在寫入期間亦被利用。雷射功率加以調整 ,俾理想之磁構型(對應一寫入步驟)每次僅在最熱區發生。 以符合LIMDOW方法之寫入作業,所有層之淨磁化,記 憶層外,在室溫之下,均爲He之方向,因爲,各層之矯頑 磁力較驅動磁鐵之磁場He在此溫度時爲小。 在Ta時下式成立:
Hci, Hc2; Hc4 < He < Hc3 爲寫入邏輯〇 ’ 一較弱雷射脈衝將層I」加熱超過居里 點,及將層4加熱超過其補償點至溫度T|(見圖4)。層4之 磁化未被外磁場反向。 乃時,下式成立: 2HeMs4t4 < Ec4 因此’將看4加熱超過其補償點表示層4之淨磁化,被 導向與外磁場成反平行。在冷卻時,首先達到^ 3之居里 溫度:結果,外磁場He導引層3爲其方向,因而造成層3 及4之RE及TM成份之反平行方向。此代表具有壁能量 σ、ν.3·4之水平介面壁已在兩層之間形成。在此溫度時,先決 條件爲: 因Td時,下式成立: σ.3,4 < 2HeMs3t3 — — — — — — — — — — — I* - I I I I I ! * — — — 11111 - . (請先閱讀背面之注意事項再填寫本頁) S'; -15- (CNS)/V!規格⑵〇 X挪公髮 經濟郃智慧財產局員工消費合作祍印製 43676〇 五、發明說明(13 ) 在進一步冷卻期間,層3及4之補償溫度同時到達,水平 壁I消滅造成層3與層4之方向平行,層4在其補償溫度以 下時被導向再度與外磁場平行。 因Tcp3 < Tcp4 ’下式成立: < Gw3 4 < Ec4 ,在進一步冷卻期間,層丨之溫度降低至居里溫度以下。因 爲在居里點之附近,其矯頑磁力很小,層丨之淨磁化被導向 與外磁場He平行。 在丁。1時,下式成立:
Hc, < He 當層2之溫度降低至居里點以下時,其淨磁化亦被導向與 外磁場平行或與層1及3平行。 因爲層1及2之溫度範圍受TM成份之磁影響,層3及4 則受RE成份之磁影響,層2之RE及TM成份之磁矩被導向 與相鄰層1平行,與層3成反平行。因此,在層2及3之間 之水平介面壁含有對應量之壁能量。 時,下式成立: σ、ν2,3 < 2HeMs2t2 + σνν1.2 進一步冷卻時,層〗及2之溫度降至其補償點以下。與層 3内疋·父換耦合於是將層1,2間之磁化反向,並消滅層2 ’ 3間之水平介面。 -16 - 本丐甲0國家標準(CNS〉Ai丨規格(2川 * 297公坌 — 1 — — — I I I f I I ί ^ "Ι1ΙΙΙΙΙ· (請先閱讀背面之注意事項声填寫本 43^760 經濟郜智慧財產局員工消費合作社印装 A7 B7_________ >、發明說明(14 ) TCP| S Tep2時,下式成立: EC1 十 Ec2 < 〇w2'3 進步冷卻至罜溫時,各層之磁化不再變化。因此 較弱之雷射脈衝方式寫入可使各磁層之磁化狀態將與外: 場平行。此與"邏輯〇,,對應。 爲寫入"邏輯1",各層以強雷射脈衝加熱過其居點,即至
Th(圖3)。冷卻期間,第四層之溫度降至居里點以下。第四 層於是接收外磁場之磁化方向。 溫度僅低於丁 c 4時,下式成立:
Ec4 < 2HeMS4t4 隨後,層3溫度降至其居里點以下,層3採取與外磁場平 行之磁化方向。在層3及4之間未形成介面壁,因爲,RE 及TM成份之磁矩爲平行。 在進一步冷卻中,層3及4到達其補償溫度。其淨磁化方 向在其溫度降至補償溫度以下時,與外磁場之反平行方向 反向’二成份之磁化方向不變。因爲此層接近補償點之矯 頑力甚高’外磁場無法反轉附近之層3及4之磁化方向。 丁 <Tcp3<TcP4時,下式爲眞: 2HeMs3t3 < E c3 + ^w3,4 2HeMs4t4 ^ EC4 + σνν3ι4 2HeMs3t3 + 2HeMs4t4 < Ec3 + Ec4 進一步冷卻時,層1之居里點再度到達,在He方向之淨 -17- 本紙&屮*舀國家樣準(CNS)A4蜆格(2扣X 297公藶) — 丨 I1IIII1I — 丨-· I! I 1 I I 訂·ί 丨 ίί -線 {靖先閱讀背面之注意事項#填寫本Ιί A7 B7 43678 五、發明說明(15 ) 磁化增加,因爲接近居里點之矯頑力較小。 T c 1時,下式爲眞:
Hc, < He 隨後,層2之居里點到達,此層之方向爲外磁場之方向。 此層與層3間無水平介面壁行成,因爲二層之RE及TM成 份之磁化被導向平行。 進一步冷卻期間,層1及2之溫度降至其補償點以下, 其淨磁化方向反轉’與層3及4平行,但與外磁場爲 行。 、’、' 因爲在補償點附近,其矯頑力爲無窮大,外磁P ^ 將此等層之淨磁化反轉。 野He播法 丁 S TCp2 $ Tcpl時,下式爲眞: 2HeMS|t] < Ecl + σνν)ι2 2HeMs2t2 < Ec2 + 〇vvI 2 + aw2,3 + 2HeMs2t2 < EC1 + EC2 + σ\ν2,3 最後,所有層在以強度脈衝寫入期間,其方向與外磁場 成反平行。此點與”邏輯1"對應。 本發明之磁性光學儲存媒體之第二實施例亦哥m
J可用MSR 方法讀取。此讀取作業與第一實施例之1f取作I4 采相同方式 發生。額外層並不影響讀取作業。因爲,與記憶體相似 其有一補憤溫度及居里溫度,其遠超過讀取溫疳 ^ 哎,其磁特 性在讀取作業期間不改變因爲參可層在室文時, 有—低矯 -18- 本泛张Ήρ P3 0家標準(CNS)AJ規格(21ϋ X 297公S > -------------裝---------訂---------線 一 * (請先閱讀背面之注意事項f%寫本頁) 經濟部智慧財產局員工消費合作社印裂 43676 0 A7 _;_B7_ 五、發明說明(16 ) 頑磁力,當讀取期間,其進入磁場時,其與外磁場之方向 相同。 在溫度範圍Ta< T< Tm時,下式爲眞:
Ec3 > 2HeMs3t3 + CTW2,3 + σνν3,4 及
Eci + EC2 + 〇'w2,? + EC4 + aW3,4 < 2HeMsiti + 2HeMs2t2 + 2HeMS4i4 ° I I limit— — ^ i I I ---I till--I I--^ (請先閱讀背面之注意事項椒寫本頁> 經濟部智慧財產局員H消費合作社印製 本紙張尺变適吊中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 67 6 0 A8 B8 C8 D8 六、申請專利範圍經濟部智慧財產局員工消費合作社印製 1. 一種磁性光學儲存啤體/^共%高於室溫T a义寫入溫度T W '.f 或二寫入溫度Th及Τι重復寫入資訊,並以高於室溫Ta 之溫度Tra,及在溫度Tf時之前屏蔽及在溫度Tr時之後 屏蔽在一外加磁場He中重復讀取,該媒體包括一基板, 一配置在基板上之第一磁層,及有一與溫度相關之矯頑 磁力Hcl(T),一補償溫度Tcpl,及居里溫度Tcl,一配置 在第一磁層上之第二磁層及有一溫度相關之矯頑磁力 hc2(t),補償溫度Tcp2,及居里溫度Tc2 ’及配置在第二 磁層之上第三磁層,有一溫度相關之矯頑磁力Hep3(T), 補償溫度TCP3,其中;Ta < Tf < Tm<Tcpl<Tcp2 < Tc2 < Tr < Tcl < Tcp3 < Tc3<Tw 且Hcl(T)< He 時 Ta < T < Tm Hc2(T)< Hc 時 Ta < T < Tm Hc3(T)>He 時 T < Tw, 2. 如申請專利範圍第1項之磁性光學儲存媒體, 其特徵在於, 其包括第四磁層,堆疊在第三磁層上,其有一溫度相 關之嬌頑磁力Hc4(T),一補償溫度Tcp4,一居里溫度Tc4 ,及寫入溫度L及Th,其中Ta < Tf < Tm<TcpI<Tcp2 < Tc2 < Tr < Tc] < Tcp3<TcP4 < Tc3 < Ti < Tc4<Th 及因爲 TaCTCT^ 且因爲 TSTh,Hc4(T)< He。 -20- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) -----^---訂--------- (請先閱讀背面之^'意事,項a 寫本頁>
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19828757 | 1998-06-27 | ||
DE1998130936 DE19830936A1 (de) | 1998-07-10 | 1998-07-10 | Magneto-optisches Speichermedium mit Doppelmaskierung |
Publications (1)
Publication Number | Publication Date |
---|---|
TW436760B true TW436760B (en) | 2001-05-28 |
Family
ID=26047088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088110609A TW436760B (en) | 1998-06-27 | 1999-06-24 | Magneto-optical storage medium with double mask |
Country Status (6)
Country | Link |
---|---|
US (1) | US6124048A (zh) |
EP (1) | EP0974962B1 (zh) |
JP (1) | JP2000067480A (zh) |
KR (1) | KR20000006434A (zh) |
DE (1) | DE59910434D1 (zh) |
TW (1) | TW436760B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3559206B2 (ja) * | 1999-09-30 | 2004-08-25 | 富士通株式会社 | 光磁気記録媒体 |
JP4350312B2 (ja) * | 2001-01-12 | 2009-10-21 | キヤノン株式会社 | 磁壁移動型光磁気記録媒体および情報再生方法 |
JP2002352484A (ja) * | 2001-05-25 | 2002-12-06 | Fujitsu Ltd | 光磁気記録媒体 |
JPWO2003071532A1 (ja) * | 2002-02-25 | 2005-06-16 | 富士通株式会社 | 光磁気記録媒体及びその記録再生装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69331924T2 (de) * | 1992-08-28 | 2002-10-10 | Canon K.K., Tokio/Tokyo | Magnetooptisches Aufzeichnungsmedium und Informationsaufzeichungs- und Wiedergabeverfahren damit |
JPH0863809A (ja) * | 1994-08-26 | 1996-03-08 | Canon Inc | 光磁気記録媒体及び該媒体の情報再生方法 |
JP3297513B2 (ja) * | 1993-03-04 | 2002-07-02 | キヤノン株式会社 | 光磁気記録媒体及び該媒体を用いた情報再生方法 |
JPH07169123A (ja) * | 1993-12-16 | 1995-07-04 | Nikon Corp | オーバーライト可能な光磁気記録媒体 |
EP0686970A3 (en) * | 1994-06-10 | 1996-07-24 | Canon Kk | Magneto-optical recording medium and playback method using this medium |
JPH08194976A (ja) * | 1995-01-19 | 1996-07-30 | Ricoh Co Ltd | 光磁気記録媒体及び光磁気記録方法 |
JPH09134553A (ja) * | 1995-11-06 | 1997-05-20 | Victor Co Of Japan Ltd | 光磁気記録媒体 |
WO1998002878A1 (fr) * | 1996-07-12 | 1998-01-22 | Hitachi Maxell, Ltd. | Support d'enregistrement magneto-optique, procede de reproduction et dispositif de reproduction |
US6018511A (en) * | 1996-08-27 | 2000-01-25 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical recording medium and readout method of the same |
JPH1079146A (ja) * | 1996-08-30 | 1998-03-24 | Fujitsu Ltd | 光磁気記録媒体 |
-
1999
- 1999-06-18 EP EP99201947A patent/EP0974962B1/de not_active Expired - Lifetime
- 1999-06-18 DE DE59910434T patent/DE59910434D1/de not_active Expired - Fee Related
- 1999-06-24 KR KR1019990024078A patent/KR20000006434A/ko not_active Application Discontinuation
- 1999-06-24 US US09/339,553 patent/US6124048A/en not_active Expired - Fee Related
- 1999-06-24 TW TW088110609A patent/TW436760B/zh not_active IP Right Cessation
- 1999-06-25 JP JP11180693A patent/JP2000067480A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0974962A3 (de) | 2002-07-31 |
DE59910434D1 (de) | 2004-10-14 |
KR20000006434A (ko) | 2000-01-25 |
EP0974962A2 (de) | 2000-01-26 |
US6124048A (en) | 2000-09-26 |
JP2000067480A (ja) | 2000-03-03 |
EP0974962B1 (de) | 2004-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0288069B1 (en) | Thermomagnetic recording method applying a power modulated laser beam on a magnetically coupled multi-layer structure of a perpendicular anisotropy magnetic film | |
KR950013704B1 (ko) | 열자기 기록 방법 및 열자기 기록 매체의 신호 재생 방법 | |
US4882231A (en) | Magneto-optical recording medium | |
JPH0235371B2 (zh) | ||
JPH0695404B2 (ja) | 光磁気記録方法 | |
EP0536780B1 (en) | Method of recording information on and reproducing information from magnetooptical recording medium | |
US6556516B1 (en) | Reproducing method and reproducing apparatus for magneto-optical recording medium using different radiation patterns | |
TW436760B (en) | Magneto-optical storage medium with double mask | |
US6671233B1 (en) | Magneto-optical recording medium and reproduction method therefor | |
JPS63268103A (ja) | 熱磁気記録方法 | |
EP0125534A2 (en) | Thermo-magnetic recording of binary digital information | |
JP2925424B2 (ja) | オーバーライト可能な高密度光磁気記録媒体 | |
US4670316A (en) | Thermo-magnetic recording materials supporting small stable domains | |
EP0668585B1 (en) | Information recording method and system using a magneto-optical medium | |
JP2828993B2 (ja) | 光磁気記録媒体及びそれを用いた情報記録方法 | |
EP0525705A2 (en) | Magneto-optical recording apparatus | |
Peng et al. | Computer simulation of thermomagnetic recording process in exchange-coupled magneto-optical bilayer films | |
JPH04255941A (ja) | 光磁気記録媒体 | |
EP0492359B1 (en) | Magneto-optical recording medium | |
JP2658512B2 (ja) | 光磁気記録媒体および光磁気記録方法 | |
JPS6035503A (ja) | 小さい安定な磁区を作る熱磁気記録材料 | |
EP0428946B1 (en) | Magneto-optic recording medium | |
JP3162168B2 (ja) | 光磁気記録媒体 | |
JP2582760B2 (ja) | 光磁気記録媒体 | |
Nakaki et al. | Initializing process on direct overwrite method using exchange-coupled quadri-layered magneto-optical film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |