TW428307B - Integrated inductive components and method of fabricating such components - Google Patents

Integrated inductive components and method of fabricating such components

Info

Publication number
TW428307B
TW428307B TW088114129A TW88114129A TW428307B TW 428307 B TW428307 B TW 428307B TW 088114129 A TW088114129 A TW 088114129A TW 88114129 A TW88114129 A TW 88114129A TW 428307 B TW428307 B TW 428307B
Authority
TW
Taiwan
Prior art keywords
core
insulation layer
conductive elements
conductors
components
Prior art date
Application number
TW088114129A
Other languages
English (en)
Inventor
Ian Robert Harvey
Michael Frederick Ehman
Malcolm Randall Harvey
James Craig Stephenson
Original Assignee
Bourns Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bourns Inc filed Critical Bourns Inc
Application granted granted Critical
Publication of TW428307B publication Critical patent/TW428307B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/042—Printed circuit coils by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
TW088114129A 1998-09-10 1999-09-29 Integrated inductive components and method of fabricating such components TW428307B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/151,410 US6249039B1 (en) 1998-09-10 1998-09-10 Integrated inductive components and method of fabricating such components

Publications (1)

Publication Number Publication Date
TW428307B true TW428307B (en) 2001-04-01

Family

ID=22538641

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088114129A TW428307B (en) 1998-09-10 1999-09-29 Integrated inductive components and method of fabricating such components

Country Status (6)

Country Link
US (1) US6249039B1 (zh)
EP (1) EP1114428A1 (zh)
JP (1) JP2002525846A (zh)
AU (1) AU5701899A (zh)
TW (1) TW428307B (zh)
WO (1) WO2000016349A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103827686A (zh) * 2011-09-28 2014-05-28 株式会社藤仓 线圈布线元件以及线圈布线元件的制造方法

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440750B1 (en) * 1997-06-10 2002-08-27 Agere Systems Guardian Corporation Method of making integrated circuit having a micromagnetic device
US6255714B1 (en) * 1999-06-22 2001-07-03 Agere Systems Guardian Corporation Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US6531945B1 (en) * 2000-03-10 2003-03-11 Micron Technology, Inc. Integrated circuit inductor with a magnetic core
FR2811135B1 (fr) * 2000-06-29 2002-11-22 Memscap Microcomposant du type micro-inductance ou microtransformateur
US6642552B2 (en) * 2001-02-02 2003-11-04 Grail Semiconductor Inductive storage capacitor
US6492708B2 (en) * 2001-03-14 2002-12-10 International Business Machines Corporation Integrated coil inductors for IC devices
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US7176506B2 (en) * 2001-08-28 2007-02-13 Tessera, Inc. High frequency chip packages with connecting elements
US6869831B2 (en) * 2001-09-14 2005-03-22 Texas Instruments Incorporated Adhesion by plasma conditioning of semiconductor chip surfaces
US6512285B1 (en) * 2001-10-05 2003-01-28 Skyworks Solutions, Inc. High inductance inductor in a semiconductor package
US6576560B1 (en) * 2002-02-05 2003-06-10 Macronix International Co., Ltd. Method for avoiding the fluorination of the metal contact of the semiconductor device
US6879011B1 (en) * 2002-03-07 2005-04-12 The United States Of America As Represented By The Secretary Of The Navy Magnetically shielded circuit board
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US6621141B1 (en) * 2002-07-22 2003-09-16 Palo Alto Research Center Incorporated Out-of-plane microcoil with ground-plane structure
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
JP2004200227A (ja) * 2002-12-16 2004-07-15 Alps Electric Co Ltd プリントインダクタ
US7754537B2 (en) * 2003-02-25 2010-07-13 Tessera, Inc. Manufacture of mountable capped chips
US6716693B1 (en) 2003-03-27 2004-04-06 Chartered Semiconductor Manufacturing Ltd. Method of forming a surface coating layer within an opening within a body by atomic layer deposition
TW570896B (en) * 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) * 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
TWI231865B (en) 2003-08-26 2005-05-01 Prime View Int Co Ltd An interference display cell and fabrication method thereof
US6990729B2 (en) * 2003-09-05 2006-01-31 Harris Corporation Method for forming an inductor
TW593126B (en) * 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
US20050093667A1 (en) * 2003-11-03 2005-05-05 Arnd Kilian Three-dimensional inductive micro components
US7196607B2 (en) * 2004-03-26 2007-03-27 Harris Corporation Embedded toroidal transformers in ceramic substrates
US7229908B1 (en) 2004-06-04 2007-06-12 National Semiconductor Corporation System and method for manufacturing an out of plane integrated circuit inductor
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7327510B2 (en) * 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US7373026B2 (en) * 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US7230440B2 (en) 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
US8143095B2 (en) 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
DE602005020005D1 (de) * 2005-09-09 2010-04-29 St Microelectronics Srl Induktive Anordnung
WO2007041302A2 (en) 2005-09-30 2007-04-12 Qualcomm Mems Technologies, Inc. Mems device and interconnects for same
US8521736B2 (en) * 2005-10-26 2013-08-27 Dassault Systemes Enovia Corp. Managing hierarchies of components
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US7652814B2 (en) 2006-01-27 2010-01-26 Qualcomm Mems Technologies, Inc. MEMS device with integrated optical element
US20070228156A1 (en) * 2006-03-28 2007-10-04 Household Corporation Interoperability facilitator
US7643203B2 (en) * 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US7711239B2 (en) * 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7417784B2 (en) * 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7369292B2 (en) * 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7321457B2 (en) * 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
CN100405543C (zh) * 2006-07-21 2008-07-23 中国科学院上海微系统与信息技术研究所 一种cmos工艺兼容的嵌入悬浮螺管结构电感或互感的制作方法
US7652348B1 (en) 2006-07-27 2010-01-26 National Semiconductor Corporation Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7829425B1 (en) * 2006-08-15 2010-11-09 National Semiconductor Corporation Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits
US9129741B2 (en) * 2006-09-14 2015-09-08 Qualcomm Incorporated Method and apparatus for wireless power transmission
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7535621B2 (en) 2006-12-27 2009-05-19 Qualcomm Mems Technologies, Inc. Aluminum fluoride films for microelectromechanical system applications
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
JP4867698B2 (ja) * 2007-02-20 2012-02-01 Ｔｄｋ株式会社 薄膜磁気デバイス及びこれを有する電子部品モジュール
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7625825B2 (en) * 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
US7570415B2 (en) 2007-08-07 2009-08-04 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US20090309687A1 (en) * 2008-06-11 2009-12-17 Aleksandar Aleksov Method of manufacturing an inductor for a microelectronic device, method of manufacturing a substrate containing such an inductor, and substrate manufactured thereby,
US20090315650A1 (en) * 2008-06-19 2009-12-24 Ahmadreza Rofougaran Method and system for an integrated circuit with ferromagnetic layers
SE534510C2 (sv) * 2008-11-19 2011-09-13 Silex Microsystems Ab Funktionell inkapsling
US9721715B2 (en) * 2009-01-22 2017-08-01 2Sentient Inc. Solid state components having an air core
TWM366158U (en) * 2009-04-14 2009-10-01 Domintech Co Ltd Miniature inductance
US20100327406A1 (en) 2009-06-26 2010-12-30 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate
US20110316657A1 (en) * 2010-06-28 2011-12-29 Qualcomm Incorporated Three Dimensional Wire Bond Inductor and Transformer
CN201927466U (zh) * 2010-11-30 2011-08-10 富士康(昆山)电脑接插件有限公司 磁性元件
US8598465B2 (en) * 2011-01-27 2013-12-03 Northrop Grumman Systems Corporation Hermetic circuit ring for BCB WSA circuits
US8405482B2 (en) * 2011-02-23 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including inductors
CN102738128B (zh) * 2011-03-30 2015-08-26 香港科技大学 大电感值集成磁性感应器件及其制造方法
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9183977B2 (en) * 2012-04-20 2015-11-10 Infineon Technologies Ag Method for fabricating a coil by way of a rounded trench
US8710681B2 (en) 2012-05-31 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation rings for blocking the interface between package components and the respective molding compound
US8748317B2 (en) * 2012-08-03 2014-06-10 Infineon Technologies Austria Ag Method of manufacturing a semiconductor device including a dielectric structure
CN102930970B (zh) * 2012-11-11 2015-01-28 广西梧州市平洲电子有限公司 贴片式功率电感器磁芯与底片的装配工艺方法
US9871448B2 (en) 2012-12-31 2018-01-16 Nvidia Corporation Super N-phase switching mode power supply
KR101442402B1 (ko) * 2013-03-25 2014-09-17 삼성전기주식회사 인덕터 및 그 제조 방법
US9831198B2 (en) * 2013-08-22 2017-11-28 Nvidia Corporation Inductors for integrated voltage regulators
US9306776B2 (en) 2013-09-10 2016-04-05 Nvidia Corporation Filtering high speed signals
US9825347B2 (en) * 2013-10-07 2017-11-21 Koninklijke Philips N.V. Precision batch production method for manufacturing ferrite rods
US10251280B2 (en) 2013-12-31 2019-04-02 Texas Instruments Incorporated Integrated circuit with micro inductor and micro transformer with magnetic core
US9893141B2 (en) 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core
KR102310655B1 (ko) 2015-06-25 2021-10-08 인텔 코포레이션 Wlcsp용 수직 인덕터
US20220013275A1 (en) * 2018-10-30 2022-01-13 Beihang University Mems solenoid inductor and manufacturing method thereof
JP7378166B2 (ja) * 2018-10-30 2023-11-13 北京航空航天大学 Ｍｅｍｓソレノイドトランス及びその製造方法
US11018215B2 (en) * 2019-03-14 2021-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Package and manufacturing method thereof
US11978581B2 (en) * 2019-07-09 2024-05-07 Murata Manufacturing Co., Ltd. Surface-mounted magnetic-component module

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290758A (en) 1963-08-07 1966-12-13 Hybrid solid state device
GB1165510A (en) 1968-12-13 1969-10-01 Standard Telephones Cables Ltd Solid Electrolytic Capacitors
US3898595A (en) 1970-11-02 1975-08-05 Cunningham Corp Magnetic printed circuit
US3881244A (en) 1972-06-02 1975-05-06 Texas Instruments Inc Method of making a solid state inductor
DE3036704A1 (de) 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Hybridspule und verfahren zu deren herstellung
JPS57111006A (en) 1980-12-27 1982-07-10 Sony Corp Inductance element
US5070317A (en) 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
CA2062710C (en) 1991-05-31 1996-05-14 Nobuo Shiga Transformer for monolithic microwave integrated circuit
US5336921A (en) 1992-01-27 1994-08-09 Motorola, Inc. Vertical trench inductor
US5370766A (en) 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
KR100452022B1 (ko) 1995-10-31 2004-12-14 더 휘태커 코포레이션 다중층금속중합체구조를이용한알에프변압기
US5793272A (en) * 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
KR100268906B1 (ko) * 1997-09-29 2000-10-16 김영환 반도체소자의인덕터제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103827686A (zh) * 2011-09-28 2014-05-28 株式会社藤仓 线圈布线元件以及线圈布线元件的制造方法

Also Published As

Publication number Publication date
WO2000016349A1 (en) 2000-03-23
US6249039B1 (en) 2001-06-19
EP1114428A1 (en) 2001-07-11
AU5701899A (en) 2000-04-03
JP2002525846A (ja) 2002-08-13

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