TW428055B - Apparatus for producing crystal substance and method therefor - Google Patents

Apparatus for producing crystal substance and method therefor

Info

Publication number
TW428055B
TW428055B TW088113796A TW88113796A TW428055B TW 428055 B TW428055 B TW 428055B TW 088113796 A TW088113796 A TW 088113796A TW 88113796 A TW88113796 A TW 88113796A TW 428055 B TW428055 B TW 428055B
Authority
TW
Taiwan
Prior art keywords
crucible
crystal
melt
slc
wel
Prior art date
Application number
TW088113796A
Other languages
English (en)
Inventor
Shuji Onoe
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW428055B publication Critical patent/TW428055B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control Of Non-Electrical Variables (AREA)
TW088113796A 1998-09-16 1999-08-12 Apparatus for producing crystal substance and method therefor TW428055B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26121598A JP4177488B2 (ja) 1998-09-16 1998-09-16 結晶体の製造装置および方法

Publications (1)

Publication Number Publication Date
TW428055B true TW428055B (en) 2001-04-01

Family

ID=17358752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113796A TW428055B (en) 1998-09-16 1999-08-12 Apparatus for producing crystal substance and method therefor

Country Status (3)

Country Link
US (1) US6325851B1 (zh)
JP (1) JP4177488B2 (zh)
TW (1) TW428055B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
JP5116222B2 (ja) * 2005-08-12 2013-01-09 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置及び方法
JP4785762B2 (ja) * 2007-01-30 2011-10-05 コバレントマテリアル株式会社 単結晶の製造方法
US20110082053A1 (en) * 2008-01-31 2011-04-07 Wanli Yang Molecular Rectifiers Comprising Diamondoids
US8721786B2 (en) * 2010-09-08 2014-05-13 Siemens Medical Solutions Usa, Inc. Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
KR101218847B1 (ko) * 2010-12-13 2013-01-21 주식회사 엘지실트론 단결정 잉곳 직경 제어시스템 및 이를 포함하는 단결정 잉곳 성장장치
US10494733B2 (en) 2013-09-30 2019-12-03 Gtat Corporation Method of automatically measuring seed melt back of crystalline material
KR20240056775A (ko) * 2015-12-04 2024-04-30 글로벌웨이퍼스 씨오., 엘티디. 낮은 산소 함량 실리콘의 제조를 위한 시스템들 및 방법들
JP6665870B2 (ja) * 2015-12-25 2020-03-13 株式会社Sumco ルツボ管理システム、ルツボ管理方法、シリカガラスルツボの製造方法、シリコンインゴットの製造方法、ホモエピタキシャルウェーハの製造方法
CN105568369B (zh) * 2016-01-26 2018-10-30 中山大学 一种用于提拉法晶体生长的下晶方法和自动下晶设备
CN112442736A (zh) * 2020-11-11 2021-03-05 银川隆基光伏科技有限公司 一种硅棒拉制系统
CN115595667B (zh) * 2022-10-18 2023-11-14 湖南大合新材料有限公司 一种碲锌镉晶体智能生长方法、系统、设备及存储介质

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248111A (en) 1975-10-14 1977-04-16 Akira Shiina Automatic pump to pump up liquid
US5269875A (en) 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JP2735960B2 (ja) 1991-04-30 1998-04-02 三菱マテリアル株式会社 液面制御方法
DE4231162C2 (de) 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JPH08133887A (ja) 1994-11-11 1996-05-28 Komatsu Electron Metals Co Ltd 半導体単結晶の直径検出装置
JPH10114597A (ja) 1996-08-20 1998-05-06 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造方法およびその装置

Also Published As

Publication number Publication date
JP2000086385A (ja) 2000-03-28
JP4177488B2 (ja) 2008-11-05
US6325851B1 (en) 2001-12-04

Similar Documents

Publication Publication Date Title
TW428055B (en) Apparatus for producing crystal substance and method therefor
KR960017934A (ko) 초크랄스키 단결정 성장에서의 실리콘 입상원료의 공급방법 및 그의 공급장치
CN112430844B (zh) 一种压电晶体称重长晶装置及工作方法
JPS6424089A (en) Device for adjusting initial position of melt surface
JPS6445202A (en) Device for filling bag or porch with irrigation liquor
US4742528A (en) Compensation for power feed line weight in weight measurement devices
EP2251462A3 (en) Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
JP2635141B2 (ja) 管状結晶体成長装置を制御するための制御システム
CN108138353A (zh) 单晶的制造方法
CN106906513B (zh) 单晶炉的锅跟比调节方法及锅跟比调节装置
WO1999050482B1 (en) Open-loop method and system for controlling growth of semiconductor crystal
CN208455072U (zh) 稀土电解槽阴极升降装置
CN206467327U (zh) 多晶硅铸锭炉固液界面测量机构
CN106757316A (zh) 一种单晶炉
US4483708A (en) Method and apparatus for regulating the melting rate of an electrode during electroslag remelting
CN105780111B (zh) 多晶硅铸锭炉长晶速度自动测量装置
JPH09227273A (ja) 連続チャージ法によるシリコン単結晶の製造方法
JP2563327B2 (ja) 単結晶の直径制御方法及び装置
JPH08301687A (ja) 棒状多結晶シリコンの溶解方法及びその装置
JPS57179095A (en) Method and apparatus for manufacturing single crystal
JPH0466613A (ja) 酸素吹精装置及び方法
JPS52106381A (en) Automatic control apparatus for diameter of crystal
Zaslavskij et al. The factors affected value of cross-section of alkali-haloid single crystals during automatic pulling from melt.
Fukao et al. Transmission problems arising in Czochralski process of crystal growth
TW328973B (en) Method and apparatus for fabricating a single-crystal semiconductor

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent