TW400540B - Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber - Google Patents
Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber Download PDFInfo
- Publication number
- TW400540B TW400540B TW087104841A TW87104841A TW400540B TW 400540 B TW400540 B TW 400540B TW 087104841 A TW087104841 A TW 087104841A TW 87104841 A TW87104841 A TW 87104841A TW 400540 B TW400540 B TW 400540B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing chamber
- substrate
- antenna
- plasma
- patent application
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000010849 ion bombardment Methods 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 81
- 238000009826 distribution Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 62
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims 3
- 125000003118 aryl group Chemical group 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000000314 lubricant Substances 0.000 claims 1
- 210000003205 muscle Anatomy 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000010606 normalization Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000668842 Lepidosaphes gloverii Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/828,507 US6035868A (en) | 1997-03-31 | 1997-03-31 | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW400540B true TW400540B (en) | 2000-08-01 |
Family
ID=25252012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104841A TW400540B (en) | 1997-03-31 | 1998-03-31 | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6035868A (enExample) |
| EP (1) | EP0972299B1 (enExample) |
| JP (1) | JP4472789B2 (enExample) |
| KR (1) | KR100535827B1 (enExample) |
| AT (1) | ATE255275T1 (enExample) |
| DE (1) | DE69820041T2 (enExample) |
| TW (1) | TW400540B (enExample) |
| WO (1) | WO1998044535A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
| US6355183B1 (en) | 1998-09-04 | 2002-03-12 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for plasma etching |
| US6491042B1 (en) * | 1998-12-07 | 2002-12-10 | Taiwan Semiconductor Manufacturing Company | Post etching treatment process for high density oxide etcher |
| US6496366B1 (en) * | 1999-10-26 | 2002-12-17 | Rackable Systems, Llc | High density computer equipment storage system |
| JP2001267305A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | プラズマ処理装置 |
| US6401652B1 (en) * | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
| US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
| US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
| US6773683B2 (en) * | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| JP4819244B2 (ja) * | 2001-05-15 | 2011-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7192874B2 (en) * | 2003-07-15 | 2007-03-20 | International Business Machines Corporation | Method for reducing foreign material concentrations in etch chambers |
| US20070170867A1 (en) * | 2006-01-24 | 2007-07-26 | Varian Semiconductor Equipment Associates, Inc. | Plasma Immersion Ion Source With Low Effective Antenna Voltage |
| US7845310B2 (en) * | 2006-12-06 | 2010-12-07 | Axcelis Technologies, Inc. | Wide area radio frequency plasma apparatus for processing multiple substrates |
| US8375890B2 (en) | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
| US7973296B2 (en) * | 2008-03-05 | 2011-07-05 | Tetraheed Llc | Electromagnetic systems with double-resonant spiral coil components |
| US8729806B2 (en) * | 2010-02-02 | 2014-05-20 | The Regents Of The University Of California | RF-driven ion source with a back-streaming electron dump |
| JP5546921B2 (ja) * | 2010-03-26 | 2014-07-09 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| US8936728B2 (en) * | 2010-08-31 | 2015-01-20 | Debra A. Riggs | Chemicals for oil spill cleanup |
| USD664170S1 (en) * | 2011-03-04 | 2012-07-24 | Applied Materials, Inc. | Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass |
| JP2013062358A (ja) * | 2011-09-13 | 2013-04-04 | Panasonic Corp | ドライエッチング装置 |
| JP5642034B2 (ja) * | 2011-09-13 | 2014-12-17 | パナソニック株式会社 | ドライエッチング装置 |
| US9142392B2 (en) * | 2013-04-29 | 2015-09-22 | Varian Semiconductor Equipment Associates, Inc. | Self-cleaning radio frequency plasma source |
| US20170211185A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| GB8905073D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
| US5304279A (en) * | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
| US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| JP2635267B2 (ja) * | 1991-06-27 | 1997-07-30 | アプライド マテリアルズ インコーポレイテッド | Ｒｆプラズマ処理装置 |
| JPH05136091A (ja) * | 1991-11-08 | 1993-06-01 | Sumitomo Metal Ind Ltd | マイクロ波プラズマ装置 |
| US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
| US5226967A (en) * | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| JPH0773997A (ja) * | 1993-06-30 | 1995-03-17 | Kobe Steel Ltd | プラズマｃｖｄ装置と該装置を用いたｃｖｄ処理方法及び該装置内の洗浄方法 |
| US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
| TW293983B (enExample) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
| US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
| ATE251798T1 (de) * | 1994-04-28 | 2003-10-15 | Applied Materials Inc | Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung |
| US5587038A (en) * | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
| US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
| US5580385A (en) * | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
| US5473291A (en) * | 1994-11-16 | 1995-12-05 | Brounley Associates, Inc. | Solid state plasma chamber tuner |
| JP3426382B2 (ja) * | 1995-01-24 | 2003-07-14 | アネルバ株式会社 | プラズマ処理装置 |
| US5688357A (en) * | 1995-02-15 | 1997-11-18 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
| JP3122601B2 (ja) * | 1995-06-15 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ成膜方法及びその装置 |
| US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
| US5716451A (en) * | 1995-08-17 | 1998-02-10 | Tokyo Electron Limited | Plasma processing apparatus |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5800619A (en) * | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
-
1997
- 1997-03-31 US US08/828,507 patent/US6035868A/en not_active Expired - Lifetime
-
1998
- 1998-03-26 AT AT98913017T patent/ATE255275T1/de not_active IP Right Cessation
- 1998-03-26 KR KR10-1999-7008963A patent/KR100535827B1/ko not_active Expired - Fee Related
- 1998-03-26 WO PCT/US1998/005569 patent/WO1998044535A1/en not_active Ceased
- 1998-03-26 EP EP98913017A patent/EP0972299B1/en not_active Expired - Lifetime
- 1998-03-26 JP JP54170698A patent/JP4472789B2/ja not_active Expired - Lifetime
- 1998-03-26 DE DE69820041T patent/DE69820041T2/de not_active Expired - Fee Related
- 1998-03-31 TW TW087104841A patent/TW400540B/zh not_active IP Right Cessation
-
1999
- 1999-12-01 US US09/451,850 patent/US6155203A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998044535A1 (en) | 1998-10-08 |
| KR20010005887A (ko) | 2001-01-15 |
| KR100535827B1 (ko) | 2005-12-12 |
| DE69820041D1 (de) | 2004-01-08 |
| ATE255275T1 (de) | 2003-12-15 |
| EP0972299A1 (en) | 2000-01-19 |
| US6035868A (en) | 2000-03-14 |
| US6155203A (en) | 2000-12-05 |
| JP4472789B2 (ja) | 2010-06-02 |
| EP0972299B1 (en) | 2003-11-26 |
| DE69820041T2 (de) | 2004-09-02 |
| JP2001517373A (ja) | 2001-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |