TW382729B - Plasma focus high energy photon source - Google Patents
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- TW382729B TW382729B TW087104380A TW87104380A TW382729B TW 382729 B TW382729 B TW 382729B TW 087104380 A TW087104380 A TW 087104380A TW 87104380 A TW87104380 A TW 87104380A TW 382729 B TW382729 B TW 382729B
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- 230000005855 radiation Effects 0.000 claims abstract description 39
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 13
- 239000007772 electrode material Substances 0.000 claims description 7
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 35
- 239000000463 material Substances 0.000 abstract description 13
- 239000001307 helium Substances 0.000 abstract description 11
- 229910052734 helium Inorganic materials 0.000 abstract description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 9
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- 238000000576 coating method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 235000014036 Castanea Nutrition 0.000 description 1
- 241001070941 Castanea Species 0.000 description 1
- 241000258920 Chilopoda Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
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- 230000002542 deteriorative effect Effects 0.000 description 1
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- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Public Health (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma Technology (AREA)
Description
經濟部中央標準局員Η消費合作社印掣 本發明係關於高能光子源，特別高度可靠之X光及高 能紫外光源。 發明背景 半導體業持績發展可印刷尺寸不斷縮小之積體電路之 «技術。此等系統必須具有高度可靠性，成本有效生產 量及合理製程。積體電路製造業目前由汞G線(436 nm)及I 線（365 _曝光源改成248⑽及⑼腿激光雷射源。此種 轉換係由於需要更高微影術解析度*極，有焦深損失。 ic業界的需求很快超過193 nm曝光源的解析度能力 ，因此需要於比較193 nm更短波長之可靠曝光源 。激光 線存在於157 nm，但於此種波長具有足夠透射之光學材 料無法獲得。故必須使用全反射成像系統。全反射光學系 統需要比透射系統更小的數值孔口。由於NA變小導致解 析度的損失僅能經由以大因數縮小波長補償。如此若光學 微影術解析度待改良超過193 nmm能達成的解析度則需 要於10 nm範圍之光源。 目前高能紫外光及X光源業界現況利用以雷射束、電 子或其他粒子碰撞多種目標材料產生電漿。曾使用固體目 標，但磨蝕固體目標產生的碎屑對生產線操作用系統之各 個組件具有不利影響。提議碎屑問題之一種解決之道係使 用冷凍液體或冷凍氣體目標，使碎屑不會鍍敷於光學g備 上。但此等系統未曾證實可實際用於線上作栗。 > 多年來眾所周知X光及高能紫外光可於電漿緊箍作業 中產生。電漿緊箍中電流以數種可能構型之一通過電漿， 本紙張尺度適用中國國家樣準（CNS) Α4规格（210Χ297公釐〉 V -----------袈------訂 (請讀背面之注意事項再填荈本頁) 4 A7 ------ ----Β7· 五、發明説明（2 ) — ' ~ 故流過電流形成的磁場加速電漿之電子及離子呈小容積， 有足夠能量可使内電子由離子實質剝脫及隨後產生χ光及 高能紫外光。多種由聚焦或緊箍電漿產生高能輻射之先前 技術說明於下列專利案： • J.M.Dawson > “X光產生器”，美國專利第3,961,197 號，1976年6月1日。 • T.G.Roberts等，“緻密激活電子束輔助χ光產生器 ’’，美國專利第#3,969,628號，1976年7月13日。 ·* • J.H.Lee ’ ‘‘内擺線緊箍裝置’’，炎國專利第4,〇42,848 號，1977年8月16日。 • L.Cartz等，“雷射束電漿緊箍X光系統，，，美國專 利第4,504,964號，1985年3月12曰。 • A. Weiss等，“電漿緊箍X光裝置”，美國專利第 4,536,884號，1985年 8 月 20 曰。 • S.Iwamatsu， “X光源’’，美國專利第 4,538,291 號， 1985年8月27日。 • A.Weiss等，“ X光微影術系統”，美國專利第 4,618,971 號，1986年 10月 21 曰。 經满部中央標準局員工消費合作社印笨 n m =- 二 -I I! —^p I «J^·.· I n m 1..... «»-1-. (請先閱讀背面之注意事項再填寫本頁) • A. Weiss等，“電漿緊箍X光方法’，，美國專利第 4,633,492號，1986年 12月 30 曰。 • I.Okada，Y.Saitoh， “ X光源及X光微影術方法” ，美國專利第4,635,282號，1987年1月6曰。 • R.P.Gupta等，“多重真空弧導出電漿緊箍X光源” ，美國專利第4,751,723號’ 1,988年6月14曰。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消费合作社印製 Μ _ Β7’ 五、發明説明（3 ) • R.P.Gupta等，“氣體放電導出環形電漿緊箍X光源” ，美國專利第4,752,946號，1988年6月21曰。 • J.C.Jiordan，J.S.Peariman， “用於X光源之濾波裝 置”，美國專利第4,837,794號，1989年6月6曰。 • D.A.Hammer ’ D.H.Kalantar， “使用 X 緊箍 X 光源 之微影術方法及裝置”，美國專利第5,1〇2,776號，1992年 4月5曰。 • M.W.McGeoch ’ ‘電漿X光源”，美國專利第 5,504,795號，1996年4月 2 日。 需要一種生產高能紫外光及X光之生產線可靠簡單系 統’其可避免先前技術形成碎屑之相關問題。 發明概述 本發明&供一種尚能光子源。一對電衆緊箍電極設置 於真空腔室内。工作氣體供應系統供應一種王作氣體其包 括一種責緩衝氣體及活性氣體經選擇而可提供所需譜線。 —個脈衝電源提供至少100 Hz頻率之電脈衝及一種電壓夠 咼而了於電極間形成放電而產 '生極高溫，於工作氣體之高 密度電漿緊箍於活性氣體譜線提供㈣。外部反射賴射收 集器·導引器收集於電漿緊箍產生的輻射及導引輻射於所 需方向。較佳具體例中，活性氣體為链及緩衝氣體為氨， 輻射收集器塗有電極使用材料。材料之良好選擇為鶴。 圖式之簡單說明 第1囷為利用本發明之高能光子源之略圖。 第2圖為附有盤形電極之三度空間電‘漿緊箍裝置之略
— 一--^------裝-- (請先間讀背面之注意事項再填寫本頁)
'1T 级 • —^ϋ —i --- A7 B7 五、 發明説明（ 圖。 較佳具體例之詳細說明 篇一較传體例 南能紫外光源之簡圖顯示於第1圖。主要組件為電漿 緊箍單元2，高能光子收集器4及真空光管6。電漿緊箍源 包含一個同軸電極8係由低電感脈衝電路1〇供電。本較佳 具體例之脈衝電路為可以1〇〇〇 Hz速率提供1 kV至2 kV範 圍之100 ns至500 ns脈衝給同軸電極8之高電壓、能量有效 電路。’’ 小量工作氣體如氦氣與經蒸氣之混合物存在於接近電 極8底部’如第丨圖所示。於各個高電壓脈衝，由於自行擊 穿故介於同軸電極8之内電極與外電極間出現雪崩擊穿。 緩衝氣體出現的雪崩過程離子化氣體及於電辑底部介於電 極間形成電感電漿。一旦存在有電感電漿，電流流過内電 極與外電極間》本較佳具體例中，外電極於高電壓及内電 極於地電位。電流由外電極流至内電極，如此+子遠離中 心而離子流向中心。此種電流流動產生磁場，其作用於移 動中的電荷載子’加速載子遠離同轴電極8底部。 當電漿到達中央電極末端時，電漿上的電力及磁力緊 箍電漿至一個“焦點”，此焦點環繞沿中電極中線且超出 中電極末端短距離的一點1 〇，電漿壓力及溫度快速升高達 極高溫，某些情況下甚至高達太陽表面溫^。電極尺寸及 電路的總電能較佳最適化而產生所需電漿黑體溫度。欲產 生13 nm之輻射’需要約1〇〇 eV黑體溫度。通常對特殊同 ------J---办衣------1T------k (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印裝
A7 B7 五、發明説明（5 軸構型而言，溫度隨著電脈衝電壓升高而增高。輻射點形 狀於軸向方向略為不規則及於徑向方向粗略高斯狀。約 95%放射的能量係來自於半徑約1 mm之容積。 技術參考文獻所述大半先前技術電漿緊箍單元中，輻 射點於各方向發射輻射而光譜近似黑體。工作氣體之鋰的 用途係縮窄來自輻射點的輻射光譜。 鋰蒸氣 雙重離子化鐘具有電子過渡於13 nm及作為氦氣（衝 的賴射源>子。雙重離子化鐘由於兩種原因乃絕佳選擇。 第一原因為鋰溶點低及蒸氣壓高。由輻射點射出的鋰可保 持不會鑛敷於腔室壁面及收集光學裝置，只要單純將此等 表雨加熱至50_10(rc即可。則氣相鐘可連同氮緩衝氣體使 用標準渦輪分子泉送技術泵送出腔室外。以及單純經由冷 卻兩種氣體容易分離鋰及氦。 使用鋰作為來源原子的第二優點為未離子化鋰對U nm輻射具有低吸收剖面。油輻射點射出的離子化鋰容易 以中等電場掃除。其餘未離子化鐘主要可透仙⑽輻射 。目前最普遍提示之13 nm源使用.雷射燒蚀冷珠喷射氣。 此種系統於下一脈衝前大體補充全部射出的氣，因於 對氙之吸收剖面大之故。 輻射收集器 於與射點產生的輻射均勻發射入滿4n球面度。需要 某型收集光學裝置來捕捉此缝射及導引其朝向微影術工 具°先前提示之13⑽光源可基於使用多層電介質塗層鏡 k, t------ΐτ (閱讀背面之注意事項再填寫本頁) 經满部中央#準局員工消費合作社印裝
--------------- .! - i t— I I- I I 經濟部中央標率局負工消費合作社印製 A7 —____B7 五、發明説明U ) '~一~ 作為，集光學裝置。使用多層電介質鏡用於大的爽角範圍 達成高度收集效果。可產生碎屑的任一種轄射源可塗覆電 介質鏡及劣化其反射率，如此減少收集自轄射源的輸出。 較佳系統有電極溶敍問題，如此隨著時間的經過靠近輕射 點之電介質鏡劣化。 如此發明人選用輻射收集器係利用一種先前開發用於 收集硬X光輻射的技術。此種技術探勘下述事實，許多材 料於X光區具有比-個單位更小的真實組成折射指數。可 達成全反射的角度為史耐爾法則指示反射材料内部折射角 大於90度之角度。某些材料例如鎢具有於〗3 nm虫切線入 射至18度之全外部反射。 ， 欲產生可接收大錐角的收集器，若干錐形剖面彼此套 住。各個錐形剖面可使用多於一次輻射反射而重新導引輻 射錐之剖面於所需方向。發明人估計可收集及導引於實體 夾角發射的13 nm輕射至少2 5度。 鶴電極-收集器之鎮涂層 選擇材料供全外部反射收集器用時，較佳收集器之塗 層材料與電極材料相同。鎢為最有展望的候選者，原因為 其具有作為電極的性能及其於13 nm之折射指數真實部分 為0.945。使用與電極相同的材料及鏡面塗層可免除隨^ 被溶蝕的電極材料鍍敷至收集鏡上時鏡面反射率劣化。 光管 重要地須保持沉積材料遠離微影術工具的發光光學裝 置。故以光管6為佳可進一步確保分隔。光管6為中空光管 本紙張尺度剌+ t-------,1T------4 (轉先閱讀背面之注意事項再填寫本頁) 、發明説明（7 ) ’其也大體採用全外部反射於其内面。主要收集光學裝 可設計成減小收集輻射錐角俾％配中空光管之接收角 種構想顯示於第1圖。 & 然後微影術工具之電介質鏡可徹底保護不接觸電極碎 屑，原因為如第1圖所示，鶴或鋰原子將對抗留下中* “ 管的氦流向上游擴散。 ^ 脈衝功率Μ开, 較佳脈衝功率單元1 〇為固態高頻光電壓脈衝功率單元 ，利用固態觸發電路及磁性交換電路，例如美國專2 5，142，166所述之脈衝功率單元。此等單元極為可靠，可 連續工作大體維持數個月經歷數十億個脈衝。美國專= 5，142,166之教示併述於此以供參考。 系統 如此如第1圖所示，較佳具體例中9〇t溫度之氦與鋰 蒸氣之工作氣體混合物排放入同軸電極8。來自脈衝功率 單元10之電脈衝於夠高溫及夠高壓於10產生密集電激焦點 而雙重離子化工作氣體之鋰原子而產生紫外光輻射於：;3 nm波長》 光被收集於全外部反射收集器4並導引入中空光管6， 於此處光被進-步導引至微龍卫具（未顯示）。放電腔室 1以渦輪抽吸系12維持於约4托耳（T()rr)真空。I作氣體中 之部分氦氣分離於氦分離器14及用於清除光f如第！圖之 16所示。氦於光管壓力較佳匹配微影術之壓力需求，其典 型維持於低壓或真空。工作氣體溫度㈣交換m维持於 A7 ' -~~ ----- .__B7: 五、發明説明（s ) 經漪部中央標準局負工消費合作社印架
所需溫度’氣體以靜電過遽器22清潔。氣體排放入第』 所不之同軸電極空間。 差_二較佳電漿緊箍單分. 第一較佳電聚緊箱單元顯示於第2圖。此種單元類似 美國專利第4,〇42，m號所述之電浆緊箱裝置。此單元包 含兩個外圓盤形電極3〇及32及—個内圓盤形電極36。如專 利案第4,042別8號及第2圖指示，緊箱係由三個方向產生 。緊箍始於接近電極周邊，朝向中心前進， 於内電極“、出現輕射點，如第2圖顯示於34eJ= 第1圖之具體例所示被收集及導引。但如第2圖所示可捕捉 由單元兩側送出的兩個方向的輻射。x，經由定位電介質 鏡於38,最初反射至左方之實質百分率之輻射可經由輻射 點被反射回。如此刺激輻射朝向右側。 領了解前述具體例僅供舉例說翌多種可能的特定具體 例中之數種其可代表本發明原理之應用。例如替代循環工 作氣體’較佳僅捕捉錄而排放氣氣。使用鶴以外的電極· 塗層組合亦屬可能。例如銅或鉑奄極及塗層可工作。其他 產生電漿緊箍技術可取代所述特定具體例。 述於本說明書背景㈣述之專㈣，其說㈣ 參考。多種產生高頻高電壓脈衡之方法y行及可利用。替 代方法係維持光管於室溫，如此當鋰及鎢試圖向下前進通 過光管長度使將其冷凍脫離。此種冷凍脫離的構想可進一 步減少碎屑到達微影術工具使用的光學組件量，原因為原 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ 297公釐）
I- I —1- 1 I • — 二衣------'1T------ (請先背讀背面之注意事項再填寫表$) - I In · 11
經滴部中央標準局員工消費合作社印製 五、發明説明（9 子於撞擊時永久性附著於光管。電極材料沉積於微影術工 具光學裝置上可經由設計收集器光學裝置使轄射声通過放 電腔室之小孔π再成像及使用差異栗送』己置防止。氛可通 過第一孔口由第_腔室供應入第一腔室。此種方法可有效 防止材料沉積於銅蒸氣雷射之輸出窗。氫化鋰可用於替代 鐘°此種單元也可作為靜態填充系統作業而無工作氣體流 過電極。 如此讀者需了解本發明之範圍係由隨附之申請專利範 圍及其法定相當範圍界定而非由列舉之實例界定。 元件標號對照 (請先閱讀背面之注竞举項再填寫本頁) 裝
、1T ·ν---- 2…電漿緊箍單元 4…高能光子收集器 6…光管 8···同軸電極 10…脈衝電路 12…渦輪抽吸泵 14…氦分離器 16…氦清洗光管 20…熱交換器 22…靜電過濾器 32，32…外盤形電極 34…輻射點 36…内盤形電極 38…電介質鏡 本纸張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公着） 12
Claims (1)
- ABCD^83729 -----______ 、申請專利範圍 .一種高能光子源，其包含： A. —個真空腔室， (請先閱讀背面之注意事項再填寫本頁) B. 至少兩個電極設置於真空腔室内及界定一個放 電區及設置成放電蝕刻形成高頻電漿緊箍， C. 一種工作氣體，包含活性氣體及緩衝氣體，緩 衝氣體為貴氣及活性係選擇可提供具有至少—譜線之 光， D. —個工作氣體供應系統，供供應氣體至放電區， E. —個脈衝電源，供提供至少1〇〇 Hz頻率及夠高 電壓而可介於至少一對電極間產生放電之電脈衝， F. —個外部反射輻射收集器_導引器，供收集電漿 緊箍產生的輻射及供導引該輻射於所需方向。 2.如申請專利範圍第丨項之高能光子源，其中該活性氣體 為鋰蒸氣。 3·如申請專利範圍第1項之高能光子源，其中該活性氣體 為風化鐘β 4·如申請專利範圍第丨項之高能光子源，其又包含一根光 經濟部智慧財產局員工消費合作社印製 管設置成可透射由收集器-導引器收集與導引的輻射。 5·如申請專利m圍第1之高能光子源，丨中該等電極係 由一種電極材料製成及該收集器-導引器塗以相同電極 材料。 6.如申請專利第i項之高能光子源，纟中該至少兩個 電極為三個園盤形電極界定兩個外電極及一個内電極 ，兩個外電極於作業期間係位於内電極的相對極端。 本紙張认適用 tiiiiiTcNS ) ( 210X297^ ) 13 ABCD^83729 -----______ 、申請專利範圍 .一種高能光子源，其包含： A. —個真空腔室， (請先閱讀背面之注意事項再填寫本頁) B. 至少兩個電極設置於真空腔室内及界定一個放 電區及設置成放電蝕刻形成高頻電漿緊箍， C. 一種工作氣體，包含活性氣體及緩衝氣體，緩 衝氣體為貴氣及活性係選擇可提供具有至少—譜線之 光， D. —個工作氣體供應系統，供供應氣體至放電區， E. —個脈衝電源，供提供至少1〇〇 Hz頻率及夠高 電壓而可介於至少一對電極間產生放電之電脈衝， F. —個外部反射輻射收集器_導引器，供收集電漿 緊箍產生的輻射及供導引該輻射於所需方向。 2.如申請專利範圍第丨項之高能光子源，其中該活性氣體 為鋰蒸氣。 3·如申請專利範圍第1項之高能光子源，其中該活性氣體 為風化鐘β 4·如申請專利範圍第丨項之高能光子源，其又包含一根光 經濟部智慧財產局員工消費合作社印製 管設置成可透射由收集器-導引器收集與導引的輻射。 5·如申請專利m圍第1之高能光子源，丨中該等電極係 由一種電極材料製成及該收集器-導引器塗以相同電極 材料。 6.如申請專利第i項之高能光子源，纟中該至少兩個 電極為三個園盤形電極界定兩個外電極及一個内電極 ，兩個外電極於作業期間係位於内電極的相對極端。 本紙張认適用 tiiiiiTcNS ) ( 210X297^ ) 13
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| US08/854,507 US5763930A (en) | 1997-05-12 | 1997-05-12 | Plasma focus high energy photon source |
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- 1997-05-12 US US08/854,507 patent/US5763930A/en not_active Expired - Fee Related
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1998
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- 1998-03-18 EP EP98911807A patent/EP0981936A4/en not_active Withdrawn
- 1998-03-18 WO PCT/US1998/005371 patent/WO1998052389A1/en active IP Right Grant
- 1998-03-18 AU AU65677/98A patent/AU6567798A/en not_active Abandoned
- 1998-03-24 TW TW087104380A patent/TW382729B/zh not_active IP Right Cessation
- 1998-05-11 JP JP10127187A patent/JP2942544B2/ja not_active Expired - Fee Related
- 1998-06-08 US US09/093,416 patent/US6051841A/en not_active Expired - Lifetime
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|---|---|
| AU6567798A (en) | 1998-12-08 |
| KR100614438B1 (ko) | 2006-08-21 |
| JP2942544B2 (ja) | 1999-08-30 |
| US5763930A (en) | 1998-06-09 |
| EP0981936A4 (en) | 2003-07-23 |
| WO1998052389A1 (en) | 1998-11-19 |
| US6051841A (en) | 2000-04-18 |
| KR20010012473A (ko) | 2001-02-15 |
| JPH10319195A (ja) | 1998-12-04 |
| EP0981936A1 (en) | 2000-03-01 |
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