TW375765B - Method for reducing particles deposited onto a semiconductor wafer during plasma processing - Google Patents
Method for reducing particles deposited onto a semiconductor wafer during plasma processingInfo
- Publication number
- TW375765B TW375765B TW086118178A TW86118178A TW375765B TW 375765 B TW375765 B TW 375765B TW 086118178 A TW086118178 A TW 086118178A TW 86118178 A TW86118178 A TW 86118178A TW 375765 B TW375765 B TW 375765B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor wafer
- plasma processing
- deposited onto
- wafer during
- during plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000002245 particle Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/794,698 US5945354A (en) | 1997-02-03 | 1997-02-03 | Method for reducing particles deposited onto a semiconductor wafer during plasma processing |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375765B true TW375765B (en) | 1999-12-01 |
Family
ID=25163393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086118178A TW375765B (en) | 1997-02-03 | 1997-12-03 | Method for reducing particles deposited onto a semiconductor wafer during plasma processing |
Country Status (4)
Country | Link |
---|---|
US (1) | US5945354A (zh) |
JP (1) | JPH10223619A (zh) |
KR (1) | KR100563009B1 (zh) |
TW (1) | TW375765B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6177356B1 (en) * | 1997-06-05 | 2001-01-23 | Sizary Ltd. | Semiconductor cleaning apparatus |
WO1999050888A2 (en) * | 1998-03-30 | 1999-10-07 | Sizary Ltd. | Semiconductor purification apparatus and method |
US20040149214A1 (en) * | 1999-06-02 | 2004-08-05 | Tokyo Electron Limited | Vacuum processing apparatus |
US6949203B2 (en) * | 1999-12-28 | 2005-09-27 | Applied Materials, Inc. | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
WO2001052303A1 (en) * | 2000-01-11 | 2001-07-19 | E.I. Dupont De Nemours And Company | Liner for semiconductor etching chamber |
US6486072B1 (en) | 2000-10-23 | 2002-11-26 | Advanced Micro Devices, Inc. | System and method to facilitate removal of defects from a substrate |
US20050095187A1 (en) * | 2003-11-05 | 2005-05-05 | Huan-Liang Tzeng | Insert liner for chamber entrance |
US7375027B2 (en) | 2004-10-12 | 2008-05-20 | Promos Technologies Inc. | Method of providing contact via to a surface |
KR100672820B1 (ko) * | 2004-11-12 | 2007-01-22 | 삼성전자주식회사 | 플라즈마를 사용한 피처리체의 처리 방법 |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
JP5424744B2 (ja) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | 分割環状リブ型プラズマ処理装置 |
FR2995454B1 (fr) * | 2012-09-07 | 2014-08-22 | Commissariat Energie Atomique | Procede pour la realisation d'un electrolyte a base de lithium pour micro-batterie solide |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913320A (en) * | 1974-11-13 | 1975-10-21 | Ion Tech Inc | Electron-bombardment ion sources |
US4481062A (en) * | 1982-09-02 | 1984-11-06 | Kaufman Harold R | Electron bombardment ion sources |
EP0106497B1 (en) * | 1982-09-10 | 1988-06-01 | Nippon Telegraph And Telephone Corporation | Ion shower apparatus |
JPS61278131A (ja) * | 1985-06-03 | 1986-12-09 | Agency Of Ind Science & Technol | シリコン系合金薄膜の製造方法 |
US4910436A (en) * | 1988-02-12 | 1990-03-20 | Applied Electron Corporation | Wide area VUV lamp with grids and purging jets |
US5084125A (en) * | 1989-09-12 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for producing semiconductor substrate |
US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
JPH0562936A (ja) * | 1991-09-03 | 1993-03-12 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマクリーニング方法 |
US5252178A (en) * | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
US5401319A (en) * | 1992-08-27 | 1995-03-28 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5350454A (en) * | 1993-02-26 | 1994-09-27 | General Atomics | Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves |
EP0648858A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Methods of coating plasma etch chambers and apparatus for plasma etching workpieces |
JP2748886B2 (ja) * | 1995-03-31 | 1998-05-13 | 日本電気株式会社 | プラズマ処理装置 |
JPH09148310A (ja) * | 1995-11-22 | 1997-06-06 | Hitachi Ltd | 半導体製造装置およびそのクリーニング方法ならびに半導体ウエハの取り扱い方法 |
-
1997
- 1997-02-03 US US08/794,698 patent/US5945354A/en not_active Expired - Fee Related
- 1997-12-03 TW TW086118178A patent/TW375765B/zh not_active IP Right Cessation
-
1998
- 1998-01-30 JP JP3377298A patent/JPH10223619A/ja active Pending
- 1998-02-03 KR KR1019980002872A patent/KR100563009B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100563009B1 (ko) | 2006-07-03 |
JPH10223619A (ja) | 1998-08-21 |
KR19980071018A (ko) | 1998-10-26 |
US5945354A (en) | 1999-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |