TW372340B - Semiconductor apparatus and manufacturing method thereof - Google Patents

Semiconductor apparatus and manufacturing method thereof

Info

Publication number
TW372340B
TW372340B TW086112951A TW86112951A TW372340B TW 372340 B TW372340 B TW 372340B TW 086112951 A TW086112951 A TW 086112951A TW 86112951 A TW86112951 A TW 86112951A TW 372340 B TW372340 B TW 372340B
Authority
TW
Taiwan
Prior art keywords
wires
semiconductor
power
semiconductor apparatus
signal
Prior art date
Application number
TW086112951A
Other languages
English (en)
Inventor
Atsushi Nakamura
Mitsuaki Katagiri
Kunihiro Tsubosaki
Asao Nishimura
Masachika Masuda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW372340B publication Critical patent/TW372340B/zh

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/01—Chemical elements
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
TW086112951A 1997-08-29 1997-09-08 Semiconductor apparatus and manufacturing method thereof TW372340B (en)

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US6114756A (en) 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
JP2001156237A (ja) * 1999-11-25 2001-06-08 Mitsubishi Electric Corp リードフレーム及びそれを用いた樹脂封止型半導体装置
DE10014306B4 (de) * 2000-03-23 2005-12-22 Infineon Technologies Ag Systemträger für einen Halbleiterchip mit einem Leiterrahmen
DE10158770B4 (de) * 2001-11-29 2006-08-03 Infineon Technologies Ag Leiterrahmen und Bauelement mit einem Leiterrahmen
JP2004079760A (ja) * 2002-08-19 2004-03-11 Nec Electronics Corp 半導体装置及びその組立方法
US20070158794A1 (en) * 2006-01-05 2007-07-12 Powertech Technology Inc. Package structure of thin lead-frame
US7888185B2 (en) * 2006-08-17 2011-02-15 Micron Technology, Inc. Semiconductor device assemblies and systems including at least one conductive pathway extending around a side of at least one semiconductor device
US20090039487A1 (en) * 2007-08-10 2009-02-12 Mitsubishi Electric Corporation Semiconductor device
US20140374892A1 (en) * 2013-06-24 2014-12-25 Yit Meng LEE Lead frame and semiconductor device using same
KR101847168B1 (ko) * 2016-12-08 2018-04-09 현대오트론 주식회사 파워 모듈 패키지의 제조방법 및 이를 이용한 파워 모듈 패키지

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JP2702219B2 (ja) 1989-03-20 1998-01-21 株式会社日立製作所 半導体装置及びその製造方法
JP3137749B2 (ja) * 1992-06-30 2001-02-26 株式会社日立製作所 半導体集積回路装置
JP3232697B2 (ja) 1992-09-14 2001-11-26 ソニー株式会社 樹脂封止型半導体装置
JP2810626B2 (ja) 1994-06-07 1998-10-15 日鉄セミコンダクター株式会社 半導体装置
US5498901A (en) * 1994-08-23 1996-03-12 National Semiconductor Corporation Lead frame having layered conductive planes
JPH08274234A (ja) 1995-03-30 1996-10-18 Hitachi Ltd 半導体装置およびその製造方法並びに半導体実装モジュール
KR0144164B1 (ko) * 1995-05-12 1998-07-01 문정환 엘오씨 반도체 패키지 및 반도체 장치를 패키징하는 방법
JP2828056B2 (ja) * 1996-08-20 1998-11-25 日本電気株式会社 半導体装置及びその製造方法

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AU4032197A (en) 1999-03-22

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