TW370677B - Semiconductor memory device and manufacturing method - Google Patents
Semiconductor memory device and manufacturing methodInfo
- Publication number
- TW370677B TW370677B TW086102941A TW86102941A TW370677B TW 370677 B TW370677 B TW 370677B TW 086102941 A TW086102941 A TW 086102941A TW 86102941 A TW86102941 A TW 86102941A TW 370677 B TW370677 B TW 370677B
- Authority
- TW
- Taiwan
- Prior art keywords
- melting point
- high melting
- point metal
- siliconized
- memory device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002844 melting Methods 0.000 abstract 4
- 230000008018 melting Effects 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05661296A JP3523746B2 (ja) | 1996-03-14 | 1996-03-14 | 半導体記憶装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW370677B true TW370677B (en) | 1999-09-21 |
Family
ID=13032084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086102941A TW370677B (en) | 1996-03-14 | 1997-03-10 | Semiconductor memory device and manufacturing method |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5981381A (zh) |
| JP (1) | JP3523746B2 (zh) |
| KR (1) | KR100289978B1 (zh) |
| CN (1) | CN1087500C (zh) |
| TW (1) | TW370677B (zh) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330430A (ja) | 1998-05-18 | 1999-11-30 | Nec Corp | 不揮発性半導体記憶装置の製造方法 |
| KR100306372B1 (ko) * | 1998-06-29 | 2001-10-19 | 박종섭 | 반도체소자의 게이트전극 형성방법 |
| JP2000036488A (ja) * | 1998-07-21 | 2000-02-02 | Speedfam-Ipec Co Ltd | ウエハ平坦化方法及びそのシステム |
| US6197635B1 (en) * | 1999-10-13 | 2001-03-06 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor device with reduced masking and without ARC loss in peripheral circuitry region |
| KR100363840B1 (ko) * | 1999-12-27 | 2002-12-06 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조 방법 |
| JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
| EP1435657A1 (en) * | 2002-12-30 | 2004-07-07 | STMicroelectronics S.r.l. | Non-volatile memory cell and manufacturing process |
| KR100543207B1 (ko) * | 2003-06-30 | 2006-01-20 | 주식회사 하이닉스반도체 | 하드마스크를 이용한 반도체 소자의 게이트전극 제조 방법 |
| KR100609942B1 (ko) * | 2004-01-09 | 2006-08-08 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 셀의 제조 방법 |
| KR100661186B1 (ko) * | 2005-03-23 | 2006-12-22 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
| TW200832542A (en) * | 2007-01-24 | 2008-08-01 | Chipmos Technologies Inc | Semiconductor structure and method for forming the same |
| KR20080088776A (ko) * | 2007-03-30 | 2008-10-06 | 삼성전자주식회사 | 비휘발성 기억 장치의 스토리지 및 그 형성 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088317B2 (ja) * | 1990-04-24 | 1996-01-29 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| KR970000533B1 (ko) * | 1990-12-20 | 1997-01-13 | 후지쓰 가부시끼가이샤 | Eprom 및 그 제조방법 |
| KR970001346B1 (ko) * | 1992-10-12 | 1997-02-05 | 삼성전자 주식회사 | 반도체 메모리장치 및 그 제조방법 |
| JPH07245350A (ja) * | 1994-03-04 | 1995-09-19 | Sony Corp | 半導体装置の２層ゲート構造，それを用いた不揮発性記憶素子および２層ゲート構造の製造方法 |
| JP3764177B2 (ja) | 1994-03-16 | 2006-04-05 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| US5661053A (en) * | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
| US5707897A (en) * | 1996-05-16 | 1998-01-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors |
-
1996
- 1996-03-14 JP JP05661296A patent/JP3523746B2/ja not_active Expired - Fee Related
-
1997
- 1997-03-10 TW TW086102941A patent/TW370677B/zh not_active IP Right Cessation
- 1997-03-12 US US08/814,887 patent/US5981381A/en not_active Expired - Lifetime
- 1997-03-14 CN CN97103034A patent/CN1087500C/zh not_active Expired - Fee Related
- 1997-03-14 KR KR1019970008763A patent/KR100289978B1/ko not_active IP Right Cessation
-
1999
- 1999-10-04 US US09/411,372 patent/US6392270B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3523746B2 (ja) | 2004-04-26 |
| JPH09246409A (ja) | 1997-09-19 |
| US5981381A (en) | 1999-11-09 |
| US20020025630A1 (en) | 2002-02-28 |
| CN1087500C (zh) | 2002-07-10 |
| CN1162844A (zh) | 1997-10-22 |
| US6392270B1 (en) | 2002-05-21 |
| KR100289978B1 (ko) | 2001-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |