TW360910B - Method of surface image formation for deep sub-micron semiconductor - Google Patents
Method of surface image formation for deep sub-micron semiconductorInfo
- Publication number
- TW360910B TW360910B TW087103983A TW87103983A TW360910B TW 360910 B TW360910 B TW 360910B TW 087103983 A TW087103983 A TW 087103983A TW 87103983 A TW87103983 A TW 87103983A TW 360910 B TW360910 B TW 360910B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- image formation
- surface image
- deep sub
- silicon
- Prior art date
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A method of surface image formation for a deep sub-micron semiconductor, comprises the following steps: coating a photoresist layer on the surface of a substrate, forming an exposure photoresist on the surface of the photoresist, forming a silicon-containing photoresist layer on the surface of the photoresist, forming a pattern on the photoresist by etching the silicon-containing photoresist, removing the photoresist material not underneath the silicon-containing photoresist by etching the photoresist layer, and removing the photoresist material residual on the substrate and not underneath the silicon-containing photoresist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087103983A TW360910B (en) | 1998-03-17 | 1998-03-17 | Method of surface image formation for deep sub-micron semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087103983A TW360910B (en) | 1998-03-17 | 1998-03-17 | Method of surface image formation for deep sub-micron semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW360910B true TW360910B (en) | 1999-06-11 |
Family
ID=57940712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087103983A TW360910B (en) | 1998-03-17 | 1998-03-17 | Method of surface image formation for deep sub-micron semiconductor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW360910B (en) |
-
1998
- 1998-03-17 TW TW087103983A patent/TW360910B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |