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Application filed by Vanguard Int Semiconduct CorpfiledCriticalVanguard Int Semiconduct Corp
Priority to TW086108382ApriorityCriticalpatent/TW374200B/en
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Publication of TW374200BpublicationCriticalpatent/TW374200B/en
Photosensitive Polymer And Photoresist Processing
(AREA)
Abstract
The present invention provides a method of coating, which firstly the underside of a conductive material functional layer is coated with an anti-reflective bottom material and then with a layer of photo-sensitive photoresist material. Using traditional deep ultraviolet photolithography, a tiny unit can be achieved through steps such as exposure of photoresist patterns and development. Anisotropic etching on a bottom anti-reflective layer can obtain a pattern with a size as fine as 0.1 μM. Finally the width of the reactive material layer is determined by further reductive etching.
TW086108382A1997-06-171997-06-17Formation of ultra-fine width for semiconductor photolithography
TW374200B
(en)