TW357462B - A thin film transistor having a vertical structure and a method of manufacturing the same the invention relates to a thin film transistor having a vertical structure and a method of manufacturing the same - Google Patents
A thin film transistor having a vertical structure and a method of manufacturing the same the invention relates to a thin film transistor having a vertical structure and a method of manufacturing the sameInfo
- Publication number
- TW357462B TW357462B TW086118828A TW86118828A TW357462B TW 357462 B TW357462 B TW 357462B TW 086118828 A TW086118828 A TW 086118828A TW 86118828 A TW86118828 A TW 86118828A TW 357462 B TW357462 B TW 357462B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- manufacturing
- same
- vertical structure
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000009413 insulation Methods 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960075461A KR100230595B1 (ko) | 1996-12-28 | 1996-12-28 | 액정 표시 장치 및 그 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW357462B true TW357462B (en) | 1999-05-01 |
Family
ID=19491893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086118828A TW357462B (en) | 1996-12-28 | 1997-12-13 | A thin film transistor having a vertical structure and a method of manufacturing the same the invention relates to a thin film transistor having a vertical structure and a method of manufacturing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US6144422A (zh) |
JP (1) | JPH10321865A (zh) |
KR (1) | KR100230595B1 (zh) |
DE (1) | DE19753809A1 (zh) |
TW (1) | TW357462B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214945B2 (en) * | 2002-06-11 | 2007-05-08 | Canon Kabushiki Kaisha | Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system |
TWI249857B (en) * | 2005-06-01 | 2006-02-21 | Au Optronics Corp | Displaying device with photocurrent-reducing structure and method of manufacturing the same |
CN100392507C (zh) * | 2005-06-09 | 2008-06-04 | 友达光电股份有限公司 | 可降低光漏电流的薄膜晶体管显示组件及其制造方法 |
KR101484966B1 (ko) * | 2008-07-07 | 2015-01-21 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
TWI476931B (zh) * | 2010-10-21 | 2015-03-11 | Au Optronics Corp | 薄膜電晶體與具有此薄膜電晶體的畫素結構 |
CN102338955B (zh) * | 2011-08-08 | 2013-11-06 | 深圳市华星光电技术有限公司 | 薄膜晶体管像素单元 |
CN102842601B (zh) | 2012-08-17 | 2015-05-13 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法 |
CN103311310A (zh) * | 2013-05-13 | 2013-09-18 | 北京京东方光电科技有限公司 | 一种薄膜晶体管及其制备方法、阵列基板 |
KR102551998B1 (ko) * | 2018-11-20 | 2023-07-06 | 엘지디스플레이 주식회사 | 수직 구조 트랜지스터 및 전자장치 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5898975A (ja) * | 1981-12-09 | 1983-06-13 | Canon Inc | 垂直ゲ−ト薄膜トランジスタ及びその製造方法 |
JPS59208783A (ja) * | 1983-05-12 | 1984-11-27 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
JPS61292369A (ja) * | 1985-06-20 | 1986-12-23 | Canon Inc | 電界効果型薄膜トランジスタ |
US4830468A (en) * | 1987-01-20 | 1989-05-16 | Xerox Corporation | Liquid crystal print bar having a single backplane electrode |
JPS63293881A (ja) * | 1987-05-26 | 1988-11-30 | Ricoh Co Ltd | 縦型mos型薄膜トランジスタ |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
DE68921591T2 (de) * | 1988-12-28 | 1995-11-09 | Sony Corp | Flüssigkristall-Anzeigevorrichtung. |
JPH0644625B2 (ja) * | 1988-12-31 | 1994-06-08 | 三星電子株式会社 | アクティブマトリックス液晶表示素子用薄膜トランジスタ |
KR940008227B1 (ko) * | 1991-08-27 | 1994-09-08 | 주식회사 금성사 | 박막 트랜지스터 제조방법 |
US5440189A (en) * | 1991-09-30 | 1995-08-08 | Sumitomo Electric Industries, Ltd. | Surface acoustic wave device |
US5336930A (en) * | 1992-06-26 | 1994-08-09 | The United States Of America As Represented By The Secretary Of The Air Force | Backside support for thin wafers |
KR940018962A (ko) * | 1993-01-29 | 1994-08-19 | 이헌조 | 알루미나를 이용한 수직형 박막 트랜지스터 제조방법 |
JPH06250211A (ja) * | 1993-02-23 | 1994-09-09 | Hitachi Ltd | 液晶表示基板とその製造方法 |
US5610737A (en) * | 1994-03-07 | 1997-03-11 | Kabushiki Kaisha Toshiba | Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon |
JP3002099B2 (ja) * | 1994-10-13 | 2000-01-24 | 株式会社フロンテック | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
US5930607A (en) * | 1995-10-03 | 1999-07-27 | Seiko Epson Corporation | Method to prevent static destruction of an active element comprised in a liquid crystal display device |
-
1996
- 1996-12-28 KR KR1019960075461A patent/KR100230595B1/ko not_active IP Right Cessation
-
1997
- 1997-12-04 DE DE19753809A patent/DE19753809A1/de not_active Withdrawn
- 1997-12-13 TW TW086118828A patent/TW357462B/zh active
- 1997-12-22 US US08/996,128 patent/US6144422A/en not_active Expired - Lifetime
- 1997-12-25 JP JP9367426A patent/JPH10321865A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100230595B1 (ko) | 1999-11-15 |
JPH10321865A (ja) | 1998-12-04 |
KR19980056197A (ko) | 1998-09-25 |
DE19753809A1 (de) | 1998-07-02 |
US6144422A (en) | 2000-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2058513A1 (en) | Soi-type thin film transistor and manufacturing method therefor | |
MY130168A (en) | Semiconductor device and manufacturing method thereof | |
TW358992B (en) | Semiconductor device and method of fabricating the same | |
EP1341241A3 (en) | Organic thin-film transistor and manufacturing method for the same | |
TW343391B (en) | Nonvolatile semiconductor memory and methods for manufacturing and using the same | |
MY111990A (en) | Mos transistor and method for making the same | |
DE68916389D1 (de) | Auf einer Halbleiterschicht gebildeter MOS-Feldeffekttransistor auf einem isolierenden Substrat. | |
TW340261B (en) | Semiconductor device and the manufacturing method | |
EP0366116A3 (en) | Thin film transistor panel and manufacturing method thereof | |
ATE35067T1 (de) | Kleinflaechiger duennfilmtransistor. | |
EP0329482A3 (en) | Method of manufacturing a thin film transistor | |
MY114267A (en) | Metal-oxide semiconductor device | |
TW357462B (en) | A thin film transistor having a vertical structure and a method of manufacturing the same the invention relates to a thin film transistor having a vertical structure and a method of manufacturing the same | |
EP0390509A3 (en) | Semi-conductor device and method of manufacturing the same | |
KR850000799A (ko) | 호출 전용 메모리 | |
TW429600B (en) | Semiconductor device and production process thereof | |
TW356587B (en) | Semiconductor device having interlayer insulator and the method for fabricating thereof | |
KR900005463A (ko) | 반도체 기억장치 및 그 제조방법 | |
TW359005B (en) | Method for manufacturing mixed circuit bi-gap wall structure | |
TW351016B (en) | Manufacturing method of capacitor of D-RAMs | |
KR860003663A (ko) | 반도체 집적회로 장치 | |
TW429404B (en) | Semiconductor device structure and process of making the same | |
CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
KR880009426A (ko) | 반도체 메모리장치 및 그 제조방법 | |
TW353191B (en) | Semiconductor device and process for producing the same |