TW356559B - Method for fabricating semiconductor devices having triple well - Google Patents

Method for fabricating semiconductor devices having triple well

Info

Publication number
TW356559B
TW356559B TW086115298A TW86115298A TW356559B TW 356559 B TW356559 B TW 356559B TW 086115298 A TW086115298 A TW 086115298A TW 86115298 A TW86115298 A TW 86115298A TW 356559 B TW356559 B TW 356559B
Authority
TW
Taiwan
Prior art keywords
type well
type
silicon substrate
mask
impurity ions
Prior art date
Application number
TW086115298A
Other languages
Chinese (zh)
Inventor
Dae-Yong Shim
Byeong-Ryeol Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW356559B publication Critical patent/TW356559B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Abstract

A kind of method for fabricating a semiconductor having triple wells, it comprises the following steps: an element isolation mask formed on a P-type silicon substrate; forming a N-type well mask on the element isolation mask; to implant N-type impurity ions in the exposed portion of the semiconductor substrate, N-type well implant region is formed in this way; removing the N-well mask, and oxidizing the silicon substrate portion of the corresponding field region, meanwhile according to the thermal oxidation process, infiltrating the N-type impurity ions of the N-type well implanting region into the semiconductor substrate, thereby forming field oxide film and defused N-type well portion; a P-type well mask formed on the silicon substrate, whereas the element isolation mask remained on the substrate; and implanting P-type impurity ions in the exposed portion of the silicon substrate, on the other hand in the meantime varying the concentration of the P-type impurity ions and ion implantation energy, therefore forming a P-type well regions in the silicon substrate, and forming internal p-type well portion in the N-type well portion.
TW086115298A 1996-12-31 1997-10-17 Method for fabricating semiconductor devices having triple well TW356559B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960080269A KR100220954B1 (en) 1996-12-31 1996-12-31 Manufacturing method of semiconductor device having a triple well

Publications (1)

Publication Number Publication Date
TW356559B true TW356559B (en) 1999-04-21

Family

ID=19493519

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115298A TW356559B (en) 1996-12-31 1997-10-17 Method for fabricating semiconductor devices having triple well

Country Status (4)

Country Link
JP (1) JP2998730B2 (en)
KR (1) KR100220954B1 (en)
GB (1) GB2320802B (en)
TW (1) TW356559B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328455B1 (en) * 1997-12-30 2002-08-08 주식회사 하이닉스반도체 Method of manufacuring a semiconductor device
KR100465606B1 (en) * 1998-06-30 2005-04-06 주식회사 하이닉스반도체 Triple well manufacturing method of semiconductor device
KR100524465B1 (en) * 2003-06-30 2005-10-26 주식회사 하이닉스반도체 Method of manufacturing in semiconductor device
WO2013164210A1 (en) 2012-05-02 2013-11-07 Elmos Semiconductor Ag Pmos transistor having low threshold voltage and method for the production thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795565B2 (en) * 1991-10-08 1998-09-10 シャープ株式会社 Method for manufacturing semiconductor storage element
US5702988A (en) * 1996-05-02 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Blending integrated circuit technology

Also Published As

Publication number Publication date
GB9722437D0 (en) 1997-12-24
JP2998730B2 (en) 2000-01-11
JPH10209295A (en) 1998-08-07
GB2320802A (en) 1998-07-01
KR100220954B1 (en) 1999-09-15
KR19980060901A (en) 1998-10-07
GB2320802B (en) 2002-01-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees