TW353778B - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the sameInfo
- Publication number
- TW353778B TW353778B TW085115943A TW85115943A TW353778B TW 353778 B TW353778 B TW 353778B TW 085115943 A TW085115943 A TW 085115943A TW 85115943 A TW85115943 A TW 85115943A TW 353778 B TW353778 B TW 353778B
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- semiconductor device
- semiconductor substrate
- epitaxial growth
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7341190A JPH09181092A (ja) | 1995-12-27 | 1995-12-27 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW353778B true TW353778B (en) | 1999-03-01 |
Family
ID=18344068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085115943A TW353778B (en) | 1995-12-27 | 1996-12-24 | Semiconductor device and method for manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0782199A3 (zh) |
| JP (1) | JPH09181092A (zh) |
| KR (1) | KR100222187B1 (zh) |
| TW (1) | TW353778B (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1614440A1 (de) * | 1967-03-08 | 1970-07-16 | Siemens Ag | Thyristor |
| CH589942A5 (zh) * | 1975-09-09 | 1977-07-29 | Bbc Brown Boveri & Cie | |
| JPS54152477A (en) * | 1978-04-24 | 1979-11-30 | Gen Electric | Thyristor and method of forming same |
| JPH0724312B2 (ja) * | 1988-06-10 | 1995-03-15 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH05347413A (ja) * | 1992-06-12 | 1993-12-27 | Toshiba Corp | 半導体装置の製造方法 |
-
1995
- 1995-12-27 JP JP7341190A patent/JPH09181092A/ja active Pending
-
1996
- 1996-12-17 EP EP96120260A patent/EP0782199A3/en not_active Withdrawn
- 1996-12-24 TW TW085115943A patent/TW353778B/zh not_active IP Right Cessation
- 1996-12-27 KR KR1019960073567A patent/KR100222187B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970053010A (ko) | 1997-07-29 |
| EP0782199A3 (en) | 1999-07-28 |
| EP0782199A2 (en) | 1997-07-02 |
| KR100222187B1 (ko) | 1999-10-01 |
| JPH09181092A (ja) | 1997-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |