TW352421B - Method and process of phase shifting mask - Google Patents
Method and process of phase shifting maskInfo
- Publication number
- TW352421B TW352421B TW087106423A TW87106423A TW352421B TW 352421 B TW352421 B TW 352421B TW 087106423 A TW087106423 A TW 087106423A TW 87106423 A TW87106423 A TW 87106423A TW 352421 B TW352421 B TW 352421B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shifter
- shifter layer
- phase
- shifting mask
- phase shifting
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087106423A TW352421B (en) | 1998-04-27 | 1998-04-27 | Method and process of phase shifting mask |
US09/095,406 US6051345A (en) | 1998-04-27 | 1998-06-10 | Method of producing phase shifting mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087106423A TW352421B (en) | 1998-04-27 | 1998-04-27 | Method and process of phase shifting mask |
Publications (1)
Publication Number | Publication Date |
---|---|
TW352421B true TW352421B (en) | 1999-02-11 |
Family
ID=21629976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087106423A TW352421B (en) | 1998-04-27 | 1998-04-27 | Method and process of phase shifting mask |
Country Status (2)
Country | Link |
---|---|
US (1) | US6051345A (zh) |
TW (1) | TW352421B (zh) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6395435B1 (en) | 2000-06-27 | 2002-05-28 | The United States Of America As Represented By The Secretary Of The Navy | Photo-lithographic mask having total internal reflective surfaces |
JP4511786B2 (ja) * | 2000-07-16 | 2010-07-28 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 基板とこの基板から離れたテンプレートを整列させる方法 |
AU2001277907A1 (en) | 2000-07-17 | 2002-01-30 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
EP1390975A2 (en) * | 2000-08-21 | 2004-02-25 | The Board Of Regents, The University Of Texas System | Flexure based translation stage |
US6524755B2 (en) | 2000-09-07 | 2003-02-25 | Gray Scale Technologies, Inc. | Phase-shift masks and methods of fabrication |
EP2306242A3 (en) | 2000-10-12 | 2011-11-02 | Board of Regents, The University of Texas System | Method of forming a pattern on a substrate |
US20050274219A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
AU2002236520A1 (en) * | 2000-12-01 | 2002-06-11 | Unaxis Usa Inc. | Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask |
US6569581B2 (en) * | 2001-03-21 | 2003-05-27 | International Business Machines Corporation | Alternating phase shifting masks |
US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
JP4600629B2 (ja) * | 2001-06-26 | 2010-12-15 | 信越化学工業株式会社 | 位相シフトマスクブランク及びその製造方法 |
US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
US20030052084A1 (en) * | 2001-09-18 | 2003-03-20 | Tabery Cyrus E. | In-situ or ex-situ profile monitoring of phase openings on alternating phase shifting masks by scatterometry |
TWI305607B (zh) * | 2002-03-20 | 2009-01-21 | Nanya Technology Corp | |
US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US7179079B2 (en) * | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US6797440B2 (en) * | 2002-08-06 | 2004-09-28 | Freescale Semiconductor, Inc. | Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device |
US7071088B2 (en) * | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US6929762B2 (en) * | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
US7452574B2 (en) * | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
US7122079B2 (en) * | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US7157036B2 (en) * | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US7136150B2 (en) * | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US20050098534A1 (en) * | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
US20050106321A1 (en) * | 2003-11-14 | 2005-05-19 | Molecular Imprints, Inc. | Dispense geometery to achieve high-speed filling and throughput |
US8076386B2 (en) * | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7140861B2 (en) * | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US20050276919A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method for dispensing a fluid on a substrate |
US20050275311A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Compliant device for nano-scale manufacturing |
US7785526B2 (en) * | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US7309225B2 (en) * | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
US20060177535A1 (en) * | 2005-02-04 | 2006-08-10 | Molecular Imprints, Inc. | Imprint lithography template to facilitate control of liquid movement |
US20060266916A1 (en) * | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
US7906274B2 (en) * | 2007-11-21 | 2011-03-15 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
US8715890B2 (en) | 2012-01-31 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor mask blanks with a compatible stop layer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272024A (en) * | 1992-04-08 | 1993-12-21 | International Business Machines Corporation | Mask-structure and process to repair missing or unwanted phase-shifting elements |
JPH06130647A (ja) * | 1992-10-21 | 1994-05-13 | Fujitsu Ltd | 光学マスク及びその欠陥修正方法 |
-
1998
- 1998-04-27 TW TW087106423A patent/TW352421B/zh active
- 1998-06-10 US US09/095,406 patent/US6051345A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6051345A (en) | 2000-04-18 |
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