TW350159B - Hybrid mirror structure for a visible emitting VCSEL - Google Patents

Hybrid mirror structure for a visible emitting VCSEL

Info

Publication number
TW350159B
TW350159B TW086102418A TW86102418A TW350159B TW 350159 B TW350159 B TW 350159B TW 086102418 A TW086102418 A TW 086102418A TW 86102418 A TW86102418 A TW 86102418A TW 350159 B TW350159 B TW 350159B
Authority
TW
Taiwan
Prior art keywords
bragg reflector
distributed bragg
disposed
mirror structure
cladding region
Prior art date
Application number
TW086102418A
Other languages
English (en)
Inventor
Wenbin Jiang
Philip Kiely
Michael S Lebby
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW350159B publication Critical patent/TW350159B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW086102418A 1996-04-23 1997-02-27 Hybrid mirror structure for a visible emitting VCSEL TW350159B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/636,488 US5719892A (en) 1996-04-23 1996-04-23 Hybrid mirror structure for a visible emitting VCSEL

Publications (1)

Publication Number Publication Date
TW350159B true TW350159B (en) 1999-01-11

Family

ID=24552129

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102418A TW350159B (en) 1996-04-23 1997-02-27 Hybrid mirror structure for a visible emitting VCSEL

Country Status (5)

Country Link
US (1) US5719892A (zh)
EP (1) EP0803945A3 (zh)
JP (1) JPH1051068A (zh)
KR (1) KR100449768B1 (zh)
TW (1) TW350159B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US5978408A (en) 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US5896408A (en) * 1997-08-15 1999-04-20 Hewlett-Packard Company Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US5978141A (en) * 1997-11-17 1999-11-02 The United States Of America As Represented By The Secretary Of The Navy Optical mirror particularly suited for a quantum well mirror
JP3547344B2 (ja) * 1999-08-24 2004-07-28 シャープ株式会社 半導体発光素子
US6631154B2 (en) * 2000-08-22 2003-10-07 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
US6878958B2 (en) * 2001-03-26 2005-04-12 Gazillion Bits, Inc. Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
US20020163688A1 (en) * 2001-03-26 2002-11-07 Zuhua Zhu Optical communications system and vertical cavity surface emitting laser therefor
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
DE10119892C2 (de) * 2001-04-24 2003-04-03 Skf Ab Deckel, insbesondere zur Dämpfung des Geräusches eines Verbrennungsmotors
KR100475848B1 (ko) * 2002-03-07 2005-03-18 주식회사 테라스테이트 수직공진형 표면 발광레이저
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
GB2399940A (en) * 2003-03-25 2004-09-29 Sharp Kk Vertical cavity surface emitting laser
US7433381B2 (en) * 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
JP4800985B2 (ja) * 2006-03-03 2011-10-26 株式会社リコー 面発光レーザ素子、それを備えた面発光レーザアレイ、その面発光レーザアレイを備えた光走査装置、その光走査装置を備えた電子写真装置
JP4621263B2 (ja) * 2008-02-22 2011-01-26 キヤノン株式会社 面発光レーザおよび画像形成装置
EP2138882A3 (en) * 2008-06-24 2012-02-22 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Optical device generating light by luminescence coupled to an optical waveguide
JP2011061083A (ja) * 2009-09-11 2011-03-24 Sony Corp 半導体レーザ
JP5609168B2 (ja) * 2010-03-09 2014-10-22 富士ゼロックス株式会社 半導体レーザ、半導体レーザ装置および半導体レーザの製造方法
JP6123559B2 (ja) * 2013-08-07 2017-05-10 富士ゼロックス株式会社 発光サイリスタ、自己走査型発光素子アレイ、光書込みヘッドおよび画像形成装置、発光サイリスタおよび自己走査型発光素子アレイの製造方法
KR102376468B1 (ko) * 2014-12-23 2022-03-21 엘지이노텍 주식회사 적색 발광소자 및 조명장치
DE112017006413T5 (de) 2016-12-20 2019-08-29 Sony Corporation Lichtemissionselement
US11916355B2 (en) 2017-12-28 2024-02-27 Princeton Optronics, Inc. Narrow beam divergence semiconductor sources
CN114204415B (zh) * 2021-11-16 2023-11-28 深圳市嘉敏利光电有限公司 一种vcsel结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5428634A (en) * 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
CA2145670A1 (en) * 1993-04-05 1994-10-13 Mark Edward Davis Text input font system
US5359618A (en) * 1993-06-01 1994-10-25 Motorola, Inc. High efficiency VCSEL and method of fabrication
US5557626A (en) * 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
JPH0878776A (ja) * 1994-09-06 1996-03-22 Fuji Xerox Co Ltd 半導体レーザ装置

Also Published As

Publication number Publication date
KR100449768B1 (ko) 2004-11-26
EP0803945A3 (en) 1998-04-22
EP0803945A2 (en) 1997-10-29
US5719892A (en) 1998-02-17
JPH1051068A (ja) 1998-02-20
KR970072566A (ko) 1997-11-07

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