DE69612077D1 - Sichtbares Licht emittierender VCSEL mit Hybridspiegel - Google Patents
Sichtbares Licht emittierender VCSEL mit HybridspiegelInfo
- Publication number
- DE69612077D1 DE69612077D1 DE69612077T DE69612077T DE69612077D1 DE 69612077 D1 DE69612077 D1 DE 69612077D1 DE 69612077 T DE69612077 T DE 69612077T DE 69612077 T DE69612077 T DE 69612077T DE 69612077 D1 DE69612077 D1 DE 69612077D1
- Authority
- DE
- Germany
- Prior art keywords
- visible light
- emitting vcsel
- hybrid mirror
- hybrid
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/586,391 US5748665A (en) | 1996-01-16 | 1996-01-16 | Visible VCSEL with hybrid mirrors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69612077D1 true DE69612077D1 (de) | 2001-04-19 |
DE69612077T2 DE69612077T2 (de) | 2001-08-23 |
Family
ID=24345542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69612077T Expired - Fee Related DE69612077T2 (de) | 1996-01-16 | 1996-12-23 | Sichtbares Licht emittierender VCSEL mit Hybridspiegel |
Country Status (6)
Country | Link |
---|---|
US (1) | US5748665A (de) |
EP (1) | EP0785601B1 (de) |
JP (1) | JPH09199793A (de) |
KR (1) | KR100445206B1 (de) |
DE (1) | DE69612077T2 (de) |
TW (1) | TW447181B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100237188B1 (ko) * | 1997-02-10 | 2000-02-01 | 정선종 | 튜너블 레이저 제조 방법 |
JP3547344B2 (ja) * | 1999-08-24 | 2004-07-28 | シャープ株式会社 | 半導体発光素子 |
DE10053670A1 (de) * | 2000-10-28 | 2002-05-08 | Daimler Chrysler Ag | Optisches Signalübertragungssystem |
US6549556B1 (en) | 2000-12-01 | 2003-04-15 | Applied Optoelectronics, Inc. | Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector |
US6611543B2 (en) * | 2000-12-23 | 2003-08-26 | Applied Optoelectronics, Inc. | Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same |
WO2003007028A2 (en) * | 2001-07-13 | 2003-01-23 | Ecole Polytechnique Federale De Lausanne (Epfl) | Phase shifted microcavities |
EP1567724A2 (de) | 2002-12-02 | 2005-08-31 | Bj Services Company | Vorrichtung und verfahren zum pfahlrammen untersee |
JP2005322857A (ja) * | 2004-05-11 | 2005-11-17 | Nippon Telegr & Teleph Corp <Ntt> | 光共振器および光共振器の製造方法 |
JP4800985B2 (ja) * | 2006-03-03 | 2011-10-26 | 株式会社リコー | 面発光レーザ素子、それを備えた面発光レーザアレイ、その面発光レーザアレイを備えた光走査装置、その光走査装置を備えた電子写真装置 |
US7693204B2 (en) | 2006-02-03 | 2010-04-06 | Ricoh Company, Ltd. | Surface-emitting laser device and surface-emitting laser array including same |
CN101741015B (zh) * | 2006-02-03 | 2012-05-23 | 株式会社理光 | 表面发射激光器装置及包含其的表面发射激光器阵列 |
DE102006014848A1 (de) * | 2006-03-30 | 2007-10-04 | Rohde & Schwarz Gmbh & Co. Kg | Optisches Datenbus-System |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
JPH0563301A (ja) * | 1991-09-05 | 1993-03-12 | Hitachi Ltd | 半導体光素子および光通信システム |
US5258990A (en) * | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
JP3244529B2 (ja) * | 1992-04-16 | 2002-01-07 | アジレント・テクノロジーズ・インク | 面発光型第2高調波生成素子 |
US5343487A (en) * | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
JP3097938B2 (ja) * | 1992-10-06 | 2000-10-10 | 日本電信電話株式会社 | 面発光半導体レーザ |
US5295147A (en) * | 1992-12-22 | 1994-03-15 | Photonics Research Incorporated | Vertical cavity, surface-emitting laser with expanded cavity |
JPH0878776A (ja) * | 1994-09-06 | 1996-03-22 | Fuji Xerox Co Ltd | 半導体レーザ装置 |
US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
US5574738A (en) * | 1995-06-07 | 1996-11-12 | Honeywell Inc. | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
-
1996
- 1996-01-16 US US08/586,391 patent/US5748665A/en not_active Expired - Fee Related
- 1996-12-05 TW TW085115035A patent/TW447181B/zh not_active IP Right Cessation
- 1996-12-23 EP EP96120805A patent/EP0785601B1/de not_active Expired - Lifetime
- 1996-12-23 DE DE69612077T patent/DE69612077T2/de not_active Expired - Fee Related
-
1997
- 1997-01-10 JP JP9014497A patent/JPH09199793A/ja active Pending
- 1997-01-15 KR KR1019970000953A patent/KR100445206B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5748665A (en) | 1998-05-05 |
TW447181B (en) | 2001-07-21 |
JPH09199793A (ja) | 1997-07-31 |
EP0785601A1 (de) | 1997-07-23 |
KR100445206B1 (ko) | 2004-12-08 |
KR970060602A (ko) | 1997-08-12 |
EP0785601B1 (de) | 2001-03-14 |
DE69612077T2 (de) | 2001-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |