TW345688B - Electron beam-writing apparatus and method - Google Patents

Electron beam-writing apparatus and method

Info

Publication number
TW345688B
TW345688B TW086112443A TW86112443A TW345688B TW 345688 B TW345688 B TW 345688B TW 086112443 A TW086112443 A TW 086112443A TW 86112443 A TW86112443 A TW 86112443A TW 345688 B TW345688 B TW 345688B
Authority
TW
Taiwan
Prior art keywords
electron beam
shaping
writing apparatus
aperture
aperture means
Prior art date
Application number
TW086112443A
Other languages
English (en)
Inventor
Katushi Ito
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW345688B publication Critical patent/TW345688B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
TW086112443A 1996-08-30 1997-08-30 Electron beam-writing apparatus and method TW345688B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23037096A JP3206448B2 (ja) 1996-08-30 1996-08-30 電子ビーム描画装置

Publications (1)

Publication Number Publication Date
TW345688B true TW345688B (en) 1998-11-21

Family

ID=16906804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112443A TW345688B (en) 1996-08-30 1997-08-30 Electron beam-writing apparatus and method

Country Status (4)

Country Link
US (1) US6288407B1 (zh)
JP (1) JP3206448B2 (zh)
KR (1) KR100272478B1 (zh)
TW (1) TW345688B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3047294B1 (ja) * 1999-02-26 2000-05-29 株式会社日立製作所 電子ビ―ム描画方法および描画装置、ならびにそれを用いて製作したデバイス
JP2006126823A (ja) * 2004-09-30 2006-05-18 Fujitsu Ltd 可変矩形型電子ビーム露光装置及びパターン露光・形成方法
US20060076513A1 (en) * 2004-09-30 2006-04-13 Fujitsu Limited Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method
JP2006128564A (ja) * 2004-11-01 2006-05-18 Toshiba Corp 荷電ビーム露光装置および荷電ビーム制御方法
KR102573668B1 (ko) 2018-09-17 2023-09-06 삼성전자 주식회사 전기적 연결 장치 및 그것을 포함하는 전자 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1598219A (en) 1977-08-10 1981-09-16 Ibm Electron beam system
US4167676A (en) * 1978-02-21 1979-09-11 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
JPH0364016A (ja) 1989-08-02 1991-03-19 Hitachi Ltd 電子ビーム描画方法および描画用アパーチヤ
JP2936102B2 (ja) 1990-07-06 1999-08-23 富士通株式会社 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法
JPH04137520A (ja) * 1990-09-28 1992-05-12 Hitachi Ltd 電子線描画装置および描画方法
JP3338899B2 (ja) 1992-11-02 2002-10-28 富士通株式会社 荷電粒子露光用マスクの製造方法
JP3192500B2 (ja) * 1992-11-19 2001-07-30 株式会社日立製作所 電子線描画方法および電子線描画装置
JP2746098B2 (ja) 1994-01-19 1998-04-28 日本電気株式会社 電子ビーム描画用アパーチャおよび電子ビーム描画方法
DE69615721T2 (de) * 1995-03-17 2002-08-08 Ebara Corp Herstellungsverfahren mit einem Energiebündel

Also Published As

Publication number Publication date
JPH1074682A (ja) 1998-03-17
JP3206448B2 (ja) 2001-09-10
KR100272478B1 (ko) 2000-12-01
KR19980019118A (ko) 1998-06-05
US6288407B1 (en) 2001-09-11

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