GB9906859D0 - Ion implantation apparatus and method. ion beam source, and variable slit mechanism - Google Patents

Ion implantation apparatus and method. ion beam source, and variable slit mechanism

Info

Publication number
GB9906859D0
GB9906859D0 GBGB9906859.5A GB9906859A GB9906859D0 GB 9906859 D0 GB9906859 D0 GB 9906859D0 GB 9906859 A GB9906859 A GB 9906859A GB 9906859 D0 GB9906859 D0 GB 9906859D0
Authority
GB
United Kingdom
Prior art keywords
beam source
implantation apparatus
variable slit
slit mechanism
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9906859.5A
Other versions
GB2336029A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB9906859D0 publication Critical patent/GB9906859D0/en
Publication of GB2336029A publication Critical patent/GB2336029A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
GB9906859A 1998-03-31 1999-03-24 Ion implantation, ion source and variable slit mechanism Withdrawn GB2336029A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10086902A JPH11283552A (en) 1998-03-31 1998-03-31 Device and method for ion implantation, ion-beam source and variable slit mechanism

Publications (2)

Publication Number Publication Date
GB9906859D0 true GB9906859D0 (en) 1999-05-19
GB2336029A GB2336029A (en) 1999-10-06

Family

ID=13899778

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9906859A Withdrawn GB2336029A (en) 1998-03-31 1999-03-24 Ion implantation, ion source and variable slit mechanism

Country Status (3)

Country Link
JP (1) JPH11283552A (en)
KR (1) KR19990078443A (en)
GB (1) GB2336029A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2129294C1 (en) * 1998-05-22 1999-04-20 Гурович Борис Аронович Process of pattern manufacture
JP2001126656A (en) * 1999-10-25 2001-05-11 Nissin Electric Co Ltd Ion implantation device
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
JP3560154B2 (en) * 2001-03-15 2004-09-02 日新電機株式会社 Operating method of ion beam irradiation device
FR2827422B1 (en) * 2001-07-12 2003-10-31 X Ion MULTIFUNCTIONAL MACHINE FOR THE UNIFORM PROCESSING OF SUBSTRATES BY CONTROLLED ENERGY ION BEAM
FR2849266A1 (en) * 2002-12-18 2004-06-25 Gilles Borsoni Ion beam nanometric/sub nanometric sample surface modifier having multistage ions with very low cinematic energy having ion beam/electrostatic decelerator and surface sweep sampler
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US7078714B2 (en) * 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP4691347B2 (en) * 2004-10-14 2011-06-01 株式会社アルバック Ion implanter
JP5068928B2 (en) * 2004-11-30 2012-11-07 株式会社Ｓｅｎ Low energy beam enhancement method and beam irradiation apparatus
US7279687B2 (en) 2005-08-26 2007-10-09 Varian Semiconductor Equipment Associates, Inc. Technique for implementing a variable aperture lens in an ion implanter
JP4988327B2 (en) 2006-02-23 2012-08-01 ルネサスエレクトロニクス株式会社 Ion implanter
JP2007242521A (en) * 2006-03-10 2007-09-20 Mitsui Eng & Shipbuild Co Ltd Exchanging method of ion source
US7557363B2 (en) * 2006-06-02 2009-07-07 Axcelis Technologies, Inc. Closed loop dose control for ion implantation
US8471452B2 (en) 2006-06-30 2013-06-25 Nordiko Technical Services Limited Apparatus
WO2008027059A1 (en) * 2006-09-01 2008-03-06 Varian Semiconductor Equipment Associates, Inc. Technique for implementing a variable aperture lens in an ion implanter
KR100834244B1 (en) * 2006-12-22 2008-05-30 동부일렉트로닉스 주식회사 Method and apparatus for ion implant
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
JP2009048877A (en) 2007-08-21 2009-03-05 Nec Electronics Corp Ion implanter
JP6086845B2 (en) * 2013-08-29 2017-03-01 住友重機械イオンテクノロジー株式会社 Ion implantation apparatus and ion implantation method
US9443696B2 (en) * 2014-05-25 2016-09-13 Kla-Tencor Corporation Electron beam imaging with dual Wien-filter monochromator
US9748072B2 (en) * 2014-06-23 2017-08-29 Advanced Ion Beam Technology, Inc. Lower dose rate ion implantation using a wider ion beam

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724209B2 (en) * 1985-03-08 1995-03-15 日新電機株式会社 Ion implanter
GB9522883D0 (en) * 1995-11-08 1996-01-10 Applied Materials Inc An ion implanter and method of ion implantation
GB2307592B (en) * 1995-11-23 1999-11-10 Applied Materials Inc Ion implantation apparatus withimproved post mass selection deceleration
GB2314202B (en) * 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
JP3202600B2 (en) * 1996-06-27 2001-08-27 日本電気株式会社 Magnetic disk drive

Also Published As

Publication number Publication date
JPH11283552A (en) 1999-10-15
KR19990078443A (en) 1999-10-25
GB2336029A (en) 1999-10-06

Similar Documents

Publication Publication Date Title
GB9906859D0 (en) Ion implantation apparatus and method. ion beam source, and variable slit mechanism
AU2430601A (en) Ion implantation ion source, system and method
NO20010723D0 (en) System and method for placing material in bone
AU5447499A (en) Exposure apparatus and exposure method, and device and method for producing the same
EP1148532A4 (en) Method for manufacturing electron beam device, and image creating device manufactured by these manufacturing methods, method for manufacturing electron source, and apparatus for manufacturing electron source, and apparatus for manufacturing image creating device
IL138724A0 (en) Transluminal device, systems and methods for enlarging interstitial penetration tracts
GB0119697D0 (en) Fundraising.Com Corporation Inc Apparatus and method for online fundraising
ZA995954B (en) Casino method and device therefor.
AU4214399A (en) Apparatus and method for placing sutures, e.g. at a tendon laceration
BR9803500B1 (en) method and apparatus for waste treatment.
AU3957599A (en) Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
AU2001229476A1 (en) Tissue annuloplasty band and apparatus and method for fashioning, sizing and implanting the same
GB9515090D0 (en) An ion beam apparatus
ZA200003030B (en) Beam.
AU2746799A (en) Scanning exposure method, scanning exposure apparatus and its manufacturing method, and device and its manufacturing method
GB2348738B (en) Plasma source and ion implanting apparatus using the same
EP0641011A3 (en) An electron beam apparatus.
ZA973707B (en) Method for treating inflammation.
ZA992690B (en) Tuning apparatus.
EP1003197B8 (en) Electron source and image forming apparatus, and manufacturing method thereof
GB2316224B (en) Ion implantation method
EP1137041A4 (en) Electron beam device, method for producing charging-suppressing member used in the electron beam device, and image forming device
HK1035092A1 (en) Apparatus, and associated method, for generating apseudorandom number.
ZA969966B (en) Cutting apparatus.
AU3054999A (en) Method and apparatus for wafer processing, and method and apparatus for exposure

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)