TW339457B - Semiconductor device and the manufacturing method - Google Patents

Semiconductor device and the manufacturing method

Info

Publication number
TW339457B
TW339457B TW086110740A TW86110740A TW339457B TW 339457 B TW339457 B TW 339457B TW 086110740 A TW086110740 A TW 086110740A TW 86110740 A TW86110740 A TW 86110740A TW 339457 B TW339457 B TW 339457B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
scale
manufacturing
design
formed onto
Prior art date
Application number
TW086110740A
Other languages
English (en)
Inventor
Takayuki Kawasoe
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW339457B publication Critical patent/TW339457B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Thin Film Transistor (AREA)
TW086110740A 1996-07-26 1997-07-25 Semiconductor device and the manufacturing method TW339457B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8197528A JPH1041302A (ja) 1996-07-26 1996-07-26 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW339457B true TW339457B (en) 1998-09-01

Family

ID=16375974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110740A TW339457B (en) 1996-07-26 1997-07-25 Semiconductor device and the manufacturing method

Country Status (4)

Country Link
US (1) US5945740A (zh)
JP (1) JPH1041302A (zh)
KR (1) KR100256524B1 (zh)
TW (1) TW339457B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19834234C2 (de) * 1998-07-29 2000-11-30 Siemens Ag Integrierter Halbleiterchip mit Füllstrukturen
KR100399441B1 (ko) * 2001-06-29 2003-09-29 주식회사 하이닉스반도체 반도체 소자의 미세패턴 형성방법
KR100519795B1 (ko) * 2003-02-07 2005-10-10 삼성전자주식회사 다층배선 형성을 위한 포토마스크 세트 및 이를 사용하여제조된 반도체장치
JP6617067B2 (ja) * 2016-03-30 2019-12-04 日東電工株式会社 配線回路基板およびその製造方法
JP6795323B2 (ja) * 2016-04-07 2020-12-02 日東電工株式会社 配線回路基板およびその製造方法
JP6787693B2 (ja) * 2016-06-07 2020-11-18 日東電工株式会社 配線回路基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62135837A (ja) * 1985-12-10 1987-06-18 Matsushita Electric Ind Co Ltd ホトマスクおよびそれを用いた写真蝕刻法
JPS62234347A (ja) * 1986-04-04 1987-10-14 Seiko Epson Corp 配線層の形成方法
JPS62279660A (ja) * 1986-05-28 1987-12-04 Seiko Epson Corp 配線層の形成方法
JPH0574701A (ja) * 1991-09-13 1993-03-26 Hitachi Ltd レジストパターン形成方法

Also Published As

Publication number Publication date
US5945740A (en) 1999-08-31
KR980011730A (ko) 1998-04-30
JPH1041302A (ja) 1998-02-13
KR100256524B1 (ko) 2000-06-01

Similar Documents

Publication Publication Date Title
HK1018983A1 (en) Semiconductor substrate and strackable semiconductor package and fabrication method thereof.
TW339473B (en) Electronic package with multilevel connections
TW340243B (en) Manufacturing method of semiconductor elements
DE3575811D1 (de) Zerstaeubungsgeraet zum substrataufbau in vorgegebenen richtungen.
TR199500928A2 (tr) Emici, jellesen malzeme daneciklerinden olusan bir alt tabakayi ve bir üst tabakayi kapsayan emici yapi ve böyle bir yapiyi olusturma yöntemi.
SG60012A1 (en) Semiconductor substrate and fabrication method for the same
EP0611129A3 (en) Integrated substrate for integrated circuit modules.
EP0628992A3 (en) Method of manufacturing semiconductor wafers.
AU8502798A (en) Semiconductor flip-chip package and method for the fabrication thereof
EP0667637A3 (en) Monocrystalline conductor carrier and method for its production.
TW373256B (en) A semiconductor device having discontinuous insulating regions and the manufacturing method thereof
EP0658933A3 (en) Semiconductor devices and method of manufacture.
DE58908152D1 (de) Halbleiterbauelement mit Passivierungsschicht.
KR100209345B1 (en) A semiconductor device and a method of manufacturing the same.
DE69101818T2 (de) Halbleitersubstrat-Ätzgerät.
TW328172B (en) Ferroelectric device for use in integrated circuits and method of making the same
EP0616377A3 (en) Light emitting semiconductor component and manufacturing method.
DE68919485T2 (de) Halbleitersubstrat mit Substratscheibe und Verbindungshalbleiterschicht.
TW339477B (en) Novel method of contact structure formation
EP0619602A3 (en) Semiconductor device and manufacturing method.
EP0632499A3 (en) Semiconductor device substrate.
TW339457B (en) Semiconductor device and the manufacturing method
EP0042175A3 (en) Semiconductor device having a semiconductor layer formed on an insulating substrate and method for making the same
TW358986B (en) Metal layer patterns of a semiconductor device and a method for forming the same
TW359019B (en) Semiconductor device