TW333705B - The output buffering circuit includes output point, 1st & 2nd potential point, 1st & 2nd conduct control device, through-current detecting logic generator and forced logic giving device. - Google Patents

The output buffering circuit includes output point, 1st & 2nd potential point, 1st & 2nd conduct control device, through-current detecting logic generator and forced logic giving device.

Info

Publication number
TW333705B
TW333705B TW086107866A TW86107866A TW333705B TW 333705 B TW333705 B TW 333705B TW 086107866 A TW086107866 A TW 086107866A TW 86107866 A TW86107866 A TW 86107866A TW 333705 B TW333705 B TW 333705B
Authority
TW
Taiwan
Prior art keywords
logic
potential
point
control device
output
Prior art date
Application number
TW086107866A
Other languages
English (en)
Inventor
Hideki Taniguchi
Original Assignee
Mitsubishi Electiric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electiric Corp filed Critical Mitsubishi Electiric Corp
Application granted granted Critical
Publication of TW333705B publication Critical patent/TW333705B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
TW086107866A 1995-07-12 1997-06-06 The output buffering circuit includes output point, 1st & 2nd potential point, 1st & 2nd conduct control device, through-current detecting logic generator and forced logic giving device. TW333705B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17608495 1995-07-12
JP33706595A JP3369384B2 (ja) 1995-07-12 1995-12-25 出力バッファ回路

Publications (1)

Publication Number Publication Date
TW333705B true TW333705B (en) 1998-06-11

Family

ID=26497145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107866A TW333705B (en) 1995-07-12 1997-06-06 The output buffering circuit includes output point, 1st & 2nd potential point, 1st & 2nd conduct control device, through-current detecting logic generator and forced logic giving device.

Country Status (3)

Country Link
US (2) US5828260A (zh)
JP (1) JP3369384B2 (zh)
TW (1) TW333705B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69716308T2 (de) * 1997-05-01 2003-03-06 Mitsubishi Denki K.K., Tokio/Tokyo Ausgangspufferschaltung
JP3288962B2 (ja) * 1997-11-10 2002-06-04 日本プレシジョン・サーキッツ株式会社 ３値出力回路
JP3796034B2 (ja) 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
KR100295053B1 (ko) 1998-09-03 2001-07-12 윤종용 부하적응형저잡음출력버퍼
US6420924B1 (en) * 1998-09-09 2002-07-16 Ip-First L.L.C. Slew-controlled split-voltage output driver
US6356102B1 (en) 1998-11-13 2002-03-12 Integrated Device Technology, Inc. Integrated circuit output buffers having control circuits therein that utilize output signal feedback to control pull-up and pull-down time intervals
US6091260A (en) * 1998-11-13 2000-07-18 Integrated Device Technology, Inc. Integrated circuit output buffers having low propagation delay and improved noise characteristics
US6242942B1 (en) 1998-11-13 2001-06-05 Integrated Device Technology, Inc. Integrated circuit output buffers having feedback switches therein for reducing simultaneous switching noise and improving impedance matching characteristics
US6359477B1 (en) * 1999-06-03 2002-03-19 Texas Instruments Incorporated Low power driver design
JP2002027737A (ja) 2000-07-03 2002-01-25 Fujitsu Ltd Ｄｃ−ｄｃコンバータ、ｄｃ−ｄｃコンバータ用制御回路、監視回路、電子機器、およびｄｃ−ｄｃコンバータの監視方法
US6784029B1 (en) * 2002-04-12 2004-08-31 National Semiconductor Corporation Bi-directional ESD protection structure for BiCMOS technology
JP4174402B2 (ja) * 2003-09-26 2008-10-29 株式会社東芝 制御回路及びリコンフィギャラブル論理ブロック
KR100678458B1 (ko) * 2004-12-24 2007-02-02 삼성전자주식회사 레벨 쉬프트 회로 및 이의 동작 방법
US7420394B2 (en) * 2006-11-17 2008-09-02 Freescale Semiconductor, Inc. Latching input buffer circuit with variable hysteresis
JP5580350B2 (ja) * 2012-01-26 2014-08-27 株式会社東芝 ドライバ回路
TWI524674B (zh) * 2013-08-07 2016-03-01 立錡科技股份有限公司 電壓準位轉換電路
JP7193222B2 (ja) * 2017-04-11 2022-12-20 日清紡マイクロデバイス株式会社 レベルシフト回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
JPS5891680A (ja) * 1981-11-26 1983-05-31 Fujitsu Ltd 半導体装置
US4591745A (en) * 1984-01-16 1986-05-27 Itt Corporation Power-on reset pulse generator
JPS6443464A (en) * 1987-08-11 1989-02-15 Seiko Epson Corp Ink film winding method
US5124579A (en) * 1990-12-31 1992-06-23 Kianoosh Naghshineh Cmos output buffer circuit with improved ground bounce
JPH05167427A (ja) * 1991-12-13 1993-07-02 Toshiba Corp レベルシフト回路
US5243236A (en) * 1991-12-31 1993-09-07 Intel Corporation High voltage CMOS switch with protection against diffusion to well reverse junction breakdown
JP3253389B2 (ja) * 1992-03-31 2002-02-04 株式会社東芝 半導体集積回路装置
JP2978346B2 (ja) * 1992-11-30 1999-11-15 三菱電機株式会社 半導体集積回路装置の入力回路
JP3311133B2 (ja) * 1994-02-16 2002-08-05 株式会社東芝 出力回路
JP3623004B2 (ja) * 1994-03-30 2005-02-23 松下電器産業株式会社 電圧レベル変換回路
KR0120565B1 (ko) * 1994-04-18 1997-10-30 김주용 래치-업을 방지한 씨모스형 데이타 출력버퍼
US5543733A (en) * 1995-06-26 1996-08-06 Vlsi Technology, Inc. High voltage tolerant CMOS input/output circuit
US5635860A (en) * 1995-12-28 1997-06-03 Lucent Technologies Inc. Overvoltage-tolerant self-biasing CMOS output buffer

Also Published As

Publication number Publication date
US5828260A (en) 1998-10-27
US5973509A (en) 1999-10-26
JP3369384B2 (ja) 2003-01-20
JPH0983339A (ja) 1997-03-28

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