TW332328B - The method for improving contact profile of IC - Google Patents
The method for improving contact profile of ICInfo
- Publication number
- TW332328B TW332328B TW085113523A TW85113523A TW332328B TW 332328 B TW332328 B TW 332328B TW 085113523 A TW085113523 A TW 085113523A TW 85113523 A TW85113523 A TW 85113523A TW 332328 B TW332328 B TW 332328B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- opening
- contact
- etching rate
- layer
- Prior art date
Links
Abstract
A producing method for electrical contact of IC, it includes following steps: - Provide a semiconductor substrate with semiconductor devices; - Form multi-levels insulating layer on semiconductor structure, and at least two insulating layers inside the multi-layers insulating layer have different etching rate, and the A insulating layer has 1st etching rate, and the B insulating layer has 2nd etching rate; - Form photomask with opening on insulating layer, and the semiconductor devices are through the opening to electrically contact with outside; - Etch the contact opening, and through the area of insulating layer uncovered by photomask till the place that is the semiconductor substrate to electrically contact with outside; And the A insulating layer with 1st etching rate is etched faster than B insulating layer with 2nd etching rate at horizontal direction to form the profile of contact opening that is not totally vertical profile, and after etching, it is formed native oxide at the sidewalls of contact opening; - Soak the substrate into HF solution, to remove the oxide located at side wall of opening, and the A insulating layer has the lower etching rate than B insulating layer in HF solution, therefore, the contact profile is changed more vertical than above step; - Deposit glue layer on the opening till exceeding the insulating surface; - Deposit conduct layer on glue layer to fill the contact opening, and finish the producing electrical contact of IC.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085113523A TW332328B (en) | 1996-11-05 | 1996-11-05 | The method for improving contact profile of IC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085113523A TW332328B (en) | 1996-11-05 | 1996-11-05 | The method for improving contact profile of IC |
Publications (1)
Publication Number | Publication Date |
---|---|
TW332328B true TW332328B (en) | 1998-05-21 |
Family
ID=58262772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085113523A TW332328B (en) | 1996-11-05 | 1996-11-05 | The method for improving contact profile of IC |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW332328B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084508B2 (en) | 1997-03-27 | 2006-08-01 | Renesas Technology Corp. | Semiconductor device with multiple layer insulating film |
-
1996
- 1996-11-05 TW TW085113523A patent/TW332328B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084508B2 (en) | 1997-03-27 | 2006-08-01 | Renesas Technology Corp. | Semiconductor device with multiple layer insulating film |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |