TW428218B - Method for preventing residues of rugged polysilicon - Google Patents
Method for preventing residues of rugged polysiliconInfo
- Publication number
- TW428218B TW428218B TW88115774A TW88115774A TW428218B TW 428218 B TW428218 B TW 428218B TW 88115774 A TW88115774 A TW 88115774A TW 88115774 A TW88115774 A TW 88115774A TW 428218 B TW428218 B TW 428218B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- polysilicon layer
- layer
- rugged
- dielectric layer
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Weting (AREA)
Abstract
A method of producing a capacitor according to the present invention comprises: forming a field effect transistor structure on a silicon substrate; forming a first dielectric layer covering the surface of the silicon substrate; etching a portion of the first dielectric layer to form a contact window connecting to the field effect transistor; forming a second polysilicon layer covering the first dielectric layer and filling up the contact window; forming a chemical oxide layer by immersing the wafer in a SPM solution; forming a rugged polysilicon layer; performing a HF immersion step on the rugged polysilicon layer; etching a portion of the rugged polysilicon layer, the chemical oxide layer and the second polysilicon layer to form an opening therein; forming a capacitor dielectric layer covering the rugged polysilicon layer; and forming a third polysilicon layer covering the capacitor dielectric layer. The invented method can prevent residues of the rugged polysilicon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88115774A TW428218B (en) | 1999-09-10 | 1999-09-10 | Method for preventing residues of rugged polysilicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88115774A TW428218B (en) | 1999-09-10 | 1999-09-10 | Method for preventing residues of rugged polysilicon |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428218B true TW428218B (en) | 2001-04-01 |
Family
ID=21642282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88115774A TW428218B (en) | 1999-09-10 | 1999-09-10 | Method for preventing residues of rugged polysilicon |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW428218B (en) |
-
1999
- 1999-09-10 TW TW88115774A patent/TW428218B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |