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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW086113089ApriorityCriticalpatent/TW330328B/en
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Publication of TW330328BpublicationCriticalpatent/TW330328B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)
Element Separation
(AREA)
Abstract
A semiconductor element producing method includes at least the following steps: - Provide a substrate which has a surface; - Implant ions into the substrate such that the substrate has at least one well zone; - Form a gate oxide layer on the surface of the substrate; - Form a mask on the gate oxide layer to define a trench etching area; - Etch the gate oxide layer and the substrate to form a trench on the substrate; - Form an isolation layer in the trench where the surface of the isolation layer is not lower than the substrate surface; and - Form a wiring line which extends above the gate oxide layer and further extends to he top of the upper surface of the isolation layer.
TW086113089A1997-09-101997-09-10Semiconductor element producing method
TW330328B
(en)