TW278236B - Etching method of contact window - Google Patents

Abstract

An etching method of contact window, that etches through the first and second dielectric layer covered on peripheral circuit of DRAM IC in semiconductor chip to complete electric contact, comprises: supplying one DRAM IC as above in and on the above semiconductor chip, that electrically connects with the above peripheral circuit; forming one first conducting layer on the above DRAM IC, and etching circuit pattern on the above first conducting layer; forming one first dielectric layer on the above first conducting layer with etched circuit pattern, in which the above first dielectric layer consists of silicon oxide layer of the above first conducting layer and one BPSG layer; forming one second conducing layer on the above first dielectric layer, and etching circuit pattern on the second dielectric layer; forming one second dielectric layer on the above exposed second conducting layer and first dielectric layer, in which the above second dielectric layer consists of BPSG layer of the above second conducting layer and one silicon oxide layer; and etching the above opening so as to pass the above first and second dielectric layer to generate electric contact with the above peripheral circuit, therefore, due to the order of the above dielectric layer making the above opening with improved slope feature.