TW332311B - The substrate treatment apparatus - Google Patents

The substrate treatment apparatus

Info

Publication number
TW332311B
TW332311B TW086102798A TW86102798A TW332311B TW 332311 B TW332311 B TW 332311B TW 086102798 A TW086102798 A TW 086102798A TW 86102798 A TW86102798 A TW 86102798A TW 332311 B TW332311 B TW 332311B
Authority
TW
Taiwan
Prior art keywords
load lock
lock chamber
substrate treatment
gas
substrate
Prior art date
Application number
TW086102798A
Other languages
English (en)
Inventor
Mitsuhiro Hirano
Original Assignee
Nat Denki Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Denki Kk filed Critical Nat Denki Kk
Application granted granted Critical
Publication of TW332311B publication Critical patent/TW332311B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
TW086102798A 1996-03-08 1997-03-07 The substrate treatment apparatus TW332311B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8096696 1996-03-08

Publications (1)

Publication Number Publication Date
TW332311B true TW332311B (en) 1998-05-21

Family

ID=13733263

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102798A TW332311B (en) 1996-03-08 1997-03-07 The substrate treatment apparatus

Country Status (4)

Country Link
US (2) US20020104206A1 (zh)
EP (1) EP0797241A3 (zh)
KR (1) KR100267419B1 (zh)
TW (1) TW332311B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19937513B4 (de) * 1999-08-09 2004-05-06 Infineon Technologies Ag Vorrichtungen und Verfahren zur gleichverteilten Gasinjektion bei der Behandlung von Halbleitersubstraten
US6387823B1 (en) * 2000-05-23 2002-05-14 Advanced Micro Devices, Inc. Method and apparatus for controlling deposition process using residual gas analysis
SG141228A1 (en) * 2003-05-19 2008-04-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1596421A3 (en) * 2003-05-19 2011-04-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100802990B1 (ko) * 2003-11-20 2008-02-14 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
US7026580B2 (en) * 2004-03-26 2006-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable exhaust flow for thermal uniformity
KR100696379B1 (ko) * 2005-04-26 2007-03-19 삼성전자주식회사 세정 장치 및 이를 이용한 세정 방법
KR100666352B1 (ko) * 2005-05-26 2007-01-11 세메스 주식회사 기판 세정 건조 장치 및 방법
JPWO2007018139A1 (ja) * 2005-08-10 2009-02-19 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
US20070077134A1 (en) * 2005-09-30 2007-04-05 Dickinson Colin J Vacuum handler systems and processes for flexible automation of semiconductor fabrication
US7381969B2 (en) * 2006-04-24 2008-06-03 Axcelis Technologies, Inc. Load lock control
JPWO2009078354A1 (ja) * 2007-12-18 2011-04-28 住友電気工業株式会社 処理方法および半導体装置の製造方法
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
TWI555058B (zh) 2011-03-01 2016-10-21 應用材料股份有限公司 雙負載閘配置之減弱及剝離處理腔室
CN203746815U (zh) 2011-03-01 2014-07-30 应用材料公司 用于处理基板的腔室
JP5779957B2 (ja) * 2011-04-20 2015-09-16 東京エレクトロン株式会社 ローディングユニット及び処理システム
WO2013130191A1 (en) 2012-02-29 2013-09-06 Applied Materials, Inc. Abatement and strip process chamber in a load lock configuration
KR101398949B1 (ko) * 2013-01-15 2014-05-30 주식회사 유진테크 기판처리장치
CN112349631B (zh) * 2020-11-04 2021-09-10 长江存储科技有限责任公司 一种输气管道、半导体机台

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203290A (ja) 1985-03-02 1986-09-09 フアナツク株式会社 クリ−ンル−ム用ロボツト
JPS6268294A (ja) 1985-09-18 1987-03-28 株式会社小松製作所 産業用ロボツト装置
JPS6298740A (ja) * 1985-10-25 1987-05-08 Tokyo Electron Ltd 半導体デバイス製造装置
DE3814924A1 (de) * 1988-05-03 1989-11-16 Leybold Ag Vorrichtung zum ein- und ausschleusen von substraten aus einem vakuumkessel
DE58909880D1 (de) * 1988-05-24 2001-12-20 Unaxis Balzers Ag Vakuumanlage
US5162047A (en) * 1989-08-28 1992-11-10 Tokyo Electron Sagami Limited Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers
DE69228014T2 (de) 1991-01-29 1999-05-27 Shinko Electric Co Ltd Einheit zum luftdichten Aufbewahren von Halbleiterscheiben
JP3238432B2 (ja) 1991-08-27 2001-12-17 東芝機械株式会社 マルチチャンバ型枚葉処理装置
US5223001A (en) * 1991-11-21 1993-06-29 Tokyo Electron Kabushiki Kaisha Vacuum processing apparatus
US5277215A (en) * 1992-01-28 1994-01-11 Kokusai Electric Co., Ltd. Method for supplying and discharging gas to and from semiconductor manufacturing equipment and system for executing the same
JPH062676U (ja) 1992-06-15 1994-01-14 国際電気株式会社 半導体製造装置におけるロードロック室内のｎ２ ガス排気装置
US5697749A (en) 1992-07-17 1997-12-16 Tokyo Electron Kabushiki Kaisha Wafer processing apparatus
US5324540A (en) * 1992-08-17 1994-06-28 Tokyo Electron Limited System and method for supporting and rotating substrates in a process chamber

Also Published As

Publication number Publication date
US6264706B1 (en) 2001-07-24
US20020104206A1 (en) 2002-08-08
EP0797241A3 (en) 2002-05-15
EP0797241A2 (en) 1997-09-24
KR970067539A (ko) 1997-10-13
KR100267419B1 (ko) 2000-11-01

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