TW329029B - Method for making insulating area on a wafer - Google Patents

Method for making insulating area on a wafer

Info

Publication number
TW329029B
TW329029B TW086107117A TW86107117A TW329029B TW 329029 B TW329029 B TW 329029B TW 086107117 A TW086107117 A TW 086107117A TW 86107117 A TW86107117 A TW 86107117A TW 329029 B TW329029 B TW 329029B
Authority
TW
Taiwan
Prior art keywords
pad
si3n4
forming
layer
wafer
Prior art date
Application number
TW086107117A
Other languages
English (en)
Inventor
Yun-Horng Shen
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086107117A priority Critical patent/TW329029B/zh
Application granted granted Critical
Publication of TW329029B publication Critical patent/TW329029B/zh

Links

Landscapes

  • Thin Film Transistor (AREA)
TW086107117A 1997-05-26 1997-05-26 Method for making insulating area on a wafer TW329029B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086107117A TW329029B (en) 1997-05-26 1997-05-26 Method for making insulating area on a wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086107117A TW329029B (en) 1997-05-26 1997-05-26 Method for making insulating area on a wafer

Publications (1)

Publication Number Publication Date
TW329029B true TW329029B (en) 1998-04-01

Family

ID=58262485

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107117A TW329029B (en) 1997-05-26 1997-05-26 Method for making insulating area on a wafer

Country Status (1)

Country Link
TW (1) TW329029B (zh)

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Legal Events

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