KR0125309B1 - Field oxidation method of semiconductor device - Google Patents

Field oxidation method of semiconductor device

Info

Publication number
KR0125309B1
KR0125309B1 KR94016084A KR19940016084A KR0125309B1 KR 0125309 B1 KR0125309 B1 KR 0125309B1 KR 94016084 A KR94016084 A KR 94016084A KR 19940016084 A KR19940016084 A KR 19940016084A KR 0125309 B1 KR0125309 B1 KR 0125309B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
oxidation method
oxide film
field oxidation
field oxide
Prior art date
Application number
KR94016084A
Other languages
Korean (ko)
Other versions
KR960005836A (en
Inventor
Byung-Jin Cho
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR94016084A priority Critical patent/KR0125309B1/en
Publication of KR960005836A publication Critical patent/KR960005836A/en
Application granted granted Critical
Publication of KR0125309B1 publication Critical patent/KR0125309B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention provides a method of making a field oxide film for a semiconductor device. According to this method, selective silicidation is performed on a field region, and a recess is formed by removing silicided portion through wet etching. A field oxide film is formed in the recess region thereby reducing a height difference of the field oxide film and enhancing the insulating characteristics.
KR94016084A 1994-07-06 1994-07-06 Field oxidation method of semiconductor device KR0125309B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94016084A KR0125309B1 (en) 1994-07-06 1994-07-06 Field oxidation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94016084A KR0125309B1 (en) 1994-07-06 1994-07-06 Field oxidation method of semiconductor device

Publications (2)

Publication Number Publication Date
KR960005836A KR960005836A (en) 1996-02-23
KR0125309B1 true KR0125309B1 (en) 1997-12-10

Family

ID=19387329

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94016084A KR0125309B1 (en) 1994-07-06 1994-07-06 Field oxidation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR0125309B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018012890A1 (en) 2016-07-13 2018-01-18 주식회사 에스큐그리고 Method for controlling sound inside vehicle and vehicle avn system
US10506360B2 (en) 2016-04-29 2019-12-10 Sqand Co. Ltd. System for correcting sound space inside vehicle

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100744600B1 (en) * 2001-12-22 2007-08-01 매그나칩 반도체 유한회사 Method for forming metal line in semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10506360B2 (en) 2016-04-29 2019-12-10 Sqand Co. Ltd. System for correcting sound space inside vehicle
WO2018012890A1 (en) 2016-07-13 2018-01-18 주식회사 에스큐그리고 Method for controlling sound inside vehicle and vehicle avn system

Also Published As

Publication number Publication date
KR960005836A (en) 1996-02-23

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Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100920

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee