TW429485B - Metal oxide semiconductor field effect transistor with buried contact short channel recessed gate - Google Patents
Metal oxide semiconductor field effect transistor with buried contact short channel recessed gateInfo
- Publication number
- TW429485B TW429485B TW88119239A TW88119239A TW429485B TW 429485 B TW429485 B TW 429485B TW 88119239 A TW88119239 A TW 88119239A TW 88119239 A TW88119239 A TW 88119239A TW 429485 B TW429485 B TW 429485B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- region
- opening
- implanted
- Prior art date
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The method of forming transistor can include the following procedures. Pad insulation-layer is formed and stacked layer is formed. The stacked layer is patterned to define the openings of gate insulation region and separation region. Gate insulation layer and field oxide separation region are formed. After that, stacked layer is removed. The first type ion is implanted to form lightly doped region and the pad layer is stripped. Silicon layer is formed on substrate. Part of the silicon layer is removed to define the first opening. Sidewall structure is formed inside the first opening. Sidewall structure is used as mask to remove part of gate insulation layer in order to form a gate opening. The second type ion is implanted to form tunneling-resist region. After that, the first dielectric layer is formed. Gate is then formed inside the gate opening. Part of the first dielectric layer that is not covered by gate is stripped. The third type ion is implanted to form junction region. The second insulation layer is formed. Thermal treatment is then performed. Finally, the metallization process of connecting conduction wire is performed so as to complete the fabrication of transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88119239A TW429485B (en) | 1999-11-04 | 1999-11-04 | Metal oxide semiconductor field effect transistor with buried contact short channel recessed gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88119239A TW429485B (en) | 1999-11-04 | 1999-11-04 | Metal oxide semiconductor field effect transistor with buried contact short channel recessed gate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429485B true TW429485B (en) | 2001-04-11 |
Family
ID=21642892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88119239A TW429485B (en) | 1999-11-04 | 1999-11-04 | Metal oxide semiconductor field effect transistor with buried contact short channel recessed gate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429485B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI404170B (en) * | 2006-05-12 | 2013-08-01 | Vishay Siliconix | Power mosfet contact metallization |
-
1999
- 1999-11-04 TW TW88119239A patent/TW429485B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI404170B (en) * | 2006-05-12 | 2013-08-01 | Vishay Siliconix | Power mosfet contact metallization |
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Legal Events
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