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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW085104925ApriorityCriticalpatent/TW344860B/en
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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A method for forming a patterned layer comprising: providing a semiconductor substrate, the semiconductor substrate having a first void formed therein; forming upon the semiconductor substrate and into the first void a support layer, the support layer having a second void formed therein where the support layer is formed into the first void; forming a buffer layer into the second void, the buffer layer substantially planarizing the support layer; forming then a support photoresist layer upon the semiconductor substrate; and, patterning sequentially the support photoresist layer and the support layer to form a patterned photoresist layer and a patterned layer.
TW085104925A1996-04-251996-04-25Method for forming contacts with reduced contact opening
TW344860B
(en)