TW328631B - Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same - Google Patents

Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same

Info

Publication number
TW328631B
TW328631B TW086105732A TW86105732A TW328631B TW 328631 B TW328631 B TW 328631B TW 086105732 A TW086105732 A TW 086105732A TW 86105732 A TW86105732 A TW 86105732A TW 328631 B TW328631 B TW 328631B
Authority
TW
Taiwan
Prior art keywords
heat
treating
susceptor
same
semiconductor wafer
Prior art date
Application number
TW086105732A
Other languages
English (en)
Inventor
Yuuichi Mikata
Akito Yamamoto
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW328631B publication Critical patent/TW328631B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW086105732A 1996-03-27 1997-04-30 Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same TW328631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7218496A JP3586031B2 (ja) 1996-03-27 1996-03-27 サセプタおよび熱処理装置および熱処理方法

Publications (1)

Publication Number Publication Date
TW328631B true TW328631B (en) 1998-03-21

Family

ID=13481886

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086105732A TW328631B (en) 1996-03-27 1997-04-30 Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same

Country Status (5)

Country Link
US (2) US5893760A (zh)
JP (1) JP3586031B2 (zh)
KR (1) KR100241207B1 (zh)
DE (1) DE19712556B4 (zh)
TW (1) TW328631B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667727B (zh) * 2016-06-20 2019-08-01 德商賀利氏諾伯燈具公司 用於支撐架的基板支撐元件以及包含該基板支撐元件的支撐架及裝置

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EP1089328A1 (en) * 1999-09-29 2001-04-04 Infineon Technologies AG Method for manufacturing of a semiconductor device
JP2001127041A (ja) * 1999-10-26 2001-05-11 Matsushita Electric Ind Co Ltd 基板のプラズマ処理装置およびプラズマ処理方法
US6271100B1 (en) 2000-02-24 2001-08-07 International Business Machines Corporation Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield
KR100789663B1 (ko) 2000-03-15 2007-12-31 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 연마층에 투명 윈도우 부분을 갖는 연마 패드
US6303905B1 (en) * 2000-08-25 2001-10-16 Bask Technologies Llc Heating element construction for floor warming systems
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
DE60037188T2 (de) * 2000-08-29 2008-10-02 Qimonda Dresden Gmbh & Co. Ohg Verfahren zum Betreiben eines Suszeptors für Halbleiterscheiben
US6554907B2 (en) 2001-01-02 2003-04-29 Applied Materials, Inc. Susceptor with internal support
US6623563B2 (en) * 2001-01-02 2003-09-23 Applied Materials, Inc. Susceptor with bi-metal effect
US6429152B1 (en) * 2001-06-21 2002-08-06 United Microelectronics Corp. Method of forming a thin film on a semiconductor wafer
US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
JP4611229B2 (ja) * 2002-09-27 2011-01-12 株式会社日立国際電気 基板支持体、基板処理装置、基板処理方法、基板の製造方法、及び半導体装置の製造方法
JP4386837B2 (ja) * 2002-09-27 2009-12-16 株式会社日立国際電気 熱処理装置、半導体装置の製造方法及び基板の製造方法
KR100496133B1 (ko) * 2002-11-30 2005-06-17 주식회사 테라세미콘 반도체 제조장치
WO2004057650A1 (en) 2002-12-20 2004-07-08 Mattson Technology Canada, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
US6884718B2 (en) * 2003-03-18 2005-04-26 Micron Technology, Inc. Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby
US7283734B2 (en) * 2004-08-24 2007-10-16 Fujitsu Limited Rapid thermal processing apparatus and method of manufacture of semiconductor device
US7410888B2 (en) * 2004-12-30 2008-08-12 Texas Instruments Incorporated Method for manufacturing strained silicon
JP4652177B2 (ja) * 2005-09-02 2011-03-16 株式会社デンソー 半導体装置の製造方法およびその製造方法の実施に用いられる製造装置
US7184657B1 (en) * 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
JP2011127174A (ja) * 2009-12-17 2011-06-30 Tokyo Electron Ltd 基板及びその製造方法
JP5881956B2 (ja) * 2011-02-28 2016-03-09 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびウェーハホルダ
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
WO2015081289A1 (en) * 2013-11-27 2015-06-04 The Regents Of The University Of Michigan Devices combining thin film inorganic leds with organic leds and fabrication thereof
JP6617718B2 (ja) 2014-12-10 2019-12-11 株式会社ニコン 基板重ね合わせ装置および基板処理方法
KR102446726B1 (ko) * 2015-09-11 2022-09-26 삼성전자주식회사 투명 플레이트 및 그를 포함하는 기판 처리 장치
KR102015336B1 (ko) * 2017-06-12 2019-08-28 삼성전자주식회사 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치
ES2884373T3 (es) 2017-06-28 2021-12-10 Meyer Burger Germany Gmbh Dispositivo para el transporte de un sustrato, dispositivo de tratamiento con una placa de alojamiento adaptada a un soporte de sustrato de tal dispositivo y procedimiento para el procesado de un sustrato bajo utilización de tal dispositivo para el transporte de un sustrato, así como planta de tratamiento
CN110828365A (zh) * 2019-11-19 2020-02-21 全球能源互联网研究院有限公司 退火组件及退火方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667727B (zh) * 2016-06-20 2019-08-01 德商賀利氏諾伯燈具公司 用於支撐架的基板支撐元件以及包含該基板支撐元件的支撐架及裝置

Also Published As

Publication number Publication date
US5893760A (en) 1999-04-13
DE19712556A1 (de) 1997-11-06
JPH09260470A (ja) 1997-10-03
US6188838B1 (en) 2001-02-13
DE19712556B4 (de) 2004-07-08
JP3586031B2 (ja) 2004-11-10
KR100241207B1 (ko) 2000-02-01

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