TW328182B - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- TW328182B TW328182B TW085109102A TW85109102A TW328182B TW 328182 B TW328182 B TW 328182B TW 085109102 A TW085109102 A TW 085109102A TW 85109102 A TW85109102 A TW 85109102A TW 328182 B TW328182 B TW 328182B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- mode signal
- burn
- auto
- generating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34307695A JP3670067B2 (ja) | 1995-12-28 | 1995-12-28 | 集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW328182B true TW328182B (en) | 1998-03-11 |
Family
ID=18358761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085109102A TW328182B (en) | 1995-12-28 | 1996-07-25 | Integrated circuit device |
Country Status (4)
Country | Link |
---|---|
US (1) | US5818286A (zh) |
JP (1) | JP3670067B2 (zh) |
KR (1) | KR100215184B1 (zh) |
TW (1) | TW328182B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100496784B1 (ko) * | 1997-06-24 | 2005-09-14 | 삼성전자주식회사 | 반도체메모리장치의mrs |
US5912571A (en) * | 1997-10-09 | 1999-06-15 | Mosel Vitelic Corporation | Using the internal supply voltage ramp rate to prevent premature enabling of a device during power-up |
KR100791075B1 (ko) * | 2006-11-15 | 2008-01-03 | 삼성전자주식회사 | 파워 업 리셋 회로 및 이를 구비한 반도체 장치 |
US8415993B1 (en) | 2011-10-26 | 2013-04-09 | Sand 9, Inc. | Power-on reset circuit and method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04218938A (ja) * | 1990-12-19 | 1992-08-10 | Sharp Corp | 集積回路装置 |
KR950004858B1 (ko) * | 1992-03-17 | 1995-05-15 | 삼성전자 주식회사 | 내부전원전압 발생회로 |
-
1995
- 1995-12-28 JP JP34307695A patent/JP3670067B2/ja not_active Expired - Fee Related
-
1996
- 1996-07-25 TW TW085109102A patent/TW328182B/zh active
- 1996-08-01 US US08/690,828 patent/US5818286A/en not_active Expired - Lifetime
- 1996-08-03 KR KR1019960032487A patent/KR100215184B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH09184870A (ja) | 1997-07-15 |
KR970053279A (ko) | 1997-07-31 |
US5818286A (en) | 1998-10-06 |
JP3670067B2 (ja) | 2005-07-13 |
KR100215184B1 (ko) | 1999-08-16 |
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