TW322595B - - Google Patents

Download PDF

Info

Publication number
TW322595B
TW322595B TW084111554A TW84111554A TW322595B TW 322595 B TW322595 B TW 322595B TW 084111554 A TW084111554 A TW 084111554A TW 84111554 A TW84111554 A TW 84111554A TW 322595 B TW322595 B TW 322595B
Authority
TW
Taiwan
Prior art keywords
film
conductor
insulating film
semiconductor
conductor layer
Prior art date
Application number
TW084111554A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Texas Instruments Inc filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW322595B publication Critical patent/TW322595B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
TW084111554A 1995-09-13 1995-11-01 TW322595B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7235003A JPH0982800A (ja) 1995-09-13 1995-09-13 半導体集積回路装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW322595B true TW322595B (ja) 1997-12-11

Family

ID=16979627

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111554A TW322595B (ja) 1995-09-13 1995-11-01

Country Status (3)

Country Link
JP (1) JPH0982800A (ja)
KR (1) KR970017961A (ja)
TW (1) TW322595B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW410435B (en) 1998-06-30 2000-11-01 United Microelectronics Corp The metal interconnection manufacture by using the chemical mechanical polishing process
JP2001284360A (ja) * 2000-03-31 2001-10-12 Hitachi Ltd 半導体装置
KR100434334B1 (ko) * 2002-09-13 2004-06-04 주식회사 하이닉스반도체 듀얼 마스크를 이용한 반도체 소자의 커패시터 제조 방법
JP7134902B2 (ja) * 2019-03-05 2022-09-12 キオクシア株式会社 半導体装置

Also Published As

Publication number Publication date
JPH0982800A (ja) 1997-03-28
KR970017961A (ko) 1997-04-30

Similar Documents

Publication Publication Date Title
US9514976B2 (en) Trench isolation implantation
US6388296B1 (en) CMOS self-aligned strapped interconnection
KR950011983B1 (ko) 반도체 장치의 제조방법
US6268637B1 (en) Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication
US20050026345A1 (en) Process for forming dual metal gate structures
SG182007A1 (en) Methods to form dual metal gates by incorporating metals and theirconductive oxides
JPH11251457A (ja) 半導体デバイス，メモリ・セル，およびその形成方法
JP2005026586A (ja) 半導体装置及びその製造方法
JP2007123364A (ja) 半導体装置およびその製造方法
US10490645B2 (en) Semiconductor devices comprising nitrogen-doped gate dielectric, and methods of forming semiconductor devices
US20070080404A1 (en) Semiconductor device
US20080251824A1 (en) Semiconductor memory device and manufacturing method thereof
US7078307B2 (en) Method for manufacturing single-sided buried strap in semiconductor devices
JP2011204997A (ja) 半導体装置の製造方法及び半導体装置
TW322595B (ja)
US6383859B2 (en) Method of forming semiconductor device including patterning lower electrode of capacitor and gate electrode of transistor with same resist
KR100576464B1 (ko) 반도체소자의 도전배선 형성방법
JP2006237425A (ja) 半導体装置の製造方法
JP2008021935A (ja) 電子デバイス及びその製造方法
US7387921B2 (en) Method of manufacturing semiconductor device
TW531893B (en) Semiconductor device and manufacture method therefor
US20160276213A1 (en) Reliable contacts
KR20030058664A (ko) 반도체 소자의 시모스(ｃｍｏｓ) 형성 방법
KR20030079806A (ko) 적층형 게이트 전극을 갖는 반도체 장치의 제조 방법
KR20050009482A (ko) 반도체 소자의 제조방법