TW315454B - - Google Patents
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- Publication number
- TW315454B TW315454B TW085106782A TW85106782A TW315454B TW 315454 B TW315454 B TW 315454B TW 085106782 A TW085106782 A TW 085106782A TW 85106782 A TW85106782 A TW 85106782A TW 315454 B TW315454 B TW 315454B
- Authority
- TW
- Taiwan
- Prior art keywords
- field effect
- effect transistor
- transistor
- gate
- potential
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims description 475
- 230000007246 mechanism Effects 0.000 claims description 151
- 230000000694 effects Effects 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 12
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 239000004927 clay Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 208000002193 Pain Diseases 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 48
- 239000000872 buffer Substances 0.000 description 32
- 239000003990 capacitor Substances 0.000 description 32
- 230000008859 change Effects 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000470 constituent Substances 0.000 description 15
- 230000001276 controlling effect Effects 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 11
- 230000002457 bidirectional effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005070 sampling Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
- H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Liquid Crystal Display Device Control (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8024507A JPH09219636A (ja) | 1996-02-09 | 1996-02-09 | 駆動回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW315454B true TW315454B (cs) | 1997-09-11 |
Family
ID=12140103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106782A TW315454B (cs) | 1996-02-09 | 1996-06-06 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09219636A (cs) |
| KR (1) | KR970063902A (cs) |
| TW (1) | TW315454B (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975168B2 (en) | 2002-11-26 | 2005-12-13 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit |
| TWI420473B (zh) * | 2009-02-05 | 2013-12-21 | Himax Tech Ltd | 輸出緩衝器及應用此輸出緩衝器之源極驅動器 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4087540B2 (ja) * | 1998-12-28 | 2008-05-21 | 富士通株式会社 | プッシュプル型増幅回路 |
| JP3705985B2 (ja) * | 1999-05-28 | 2005-10-12 | シャープ株式会社 | シフトレジスタ、および、それを用いた画像表示装置 |
| JP3473745B2 (ja) | 1999-05-28 | 2003-12-08 | シャープ株式会社 | シフトレジスタ、および、それを用いた画像表示装置 |
| JP4627106B2 (ja) * | 2000-07-31 | 2011-02-09 | 富士通セミコンダクター株式会社 | オペアンプ回路、電流出力回路及び半導体装置 |
| JP3700558B2 (ja) * | 2000-08-10 | 2005-09-28 | 日本電気株式会社 | 駆動回路 |
| JP3617816B2 (ja) * | 2000-11-29 | 2005-02-09 | シャープ株式会社 | インピーダンス変換装置とそれを備えた表示装置の駆動装置 |
| JP4602364B2 (ja) * | 2000-12-07 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 液晶駆動装置および液晶表示システム |
| CN100583216C (zh) * | 2000-12-07 | 2010-01-20 | 株式会社日立制作所 | 半导体集成电路以及液晶显示系统 |
| JP3846293B2 (ja) * | 2000-12-28 | 2006-11-15 | 日本電気株式会社 | 帰還型増幅回路及び駆動回路 |
| JP4350463B2 (ja) * | 2002-09-02 | 2009-10-21 | キヤノン株式会社 | 入力回路及び表示装置及び情報表示装置 |
| JP4515821B2 (ja) * | 2004-05-25 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | 駆動回路、動作状態検出回路及び表示装置 |
| TWI241064B (en) * | 2005-01-13 | 2005-10-01 | Denmos Technology Inc | Push-pull buffer amplifier and source driver |
| US7362167B2 (en) * | 2005-09-29 | 2008-04-22 | Hynix Semiconductor Inc. | Voltage generator |
| JP5017871B2 (ja) * | 2006-02-02 | 2012-09-05 | 日本電気株式会社 | 差動増幅器及びデジタルアナログ変換器 |
| JP2007318571A (ja) * | 2006-05-26 | 2007-12-06 | Fujitsu Ltd | オペアンプ回路 |
| JP4680960B2 (ja) * | 2007-06-22 | 2011-05-11 | パナソニック株式会社 | 表示装置の駆動回路および表示装置 |
| JP4696180B2 (ja) * | 2010-09-27 | 2011-06-08 | パナソニック株式会社 | 表示装置の駆動回路および表示装置 |
-
1996
- 1996-02-09 JP JP8024507A patent/JPH09219636A/ja active Pending
- 1996-06-06 TW TW085106782A patent/TW315454B/zh active
- 1996-08-03 KR KR1019960032486A patent/KR970063902A/ko not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975168B2 (en) | 2002-11-26 | 2005-12-13 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit |
| TWI420473B (zh) * | 2009-02-05 | 2013-12-21 | Himax Tech Ltd | 輸出緩衝器及應用此輸出緩衝器之源極驅動器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970063902A (ko) | 1997-09-12 |
| JPH09219636A (ja) | 1997-08-19 |
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