TW311232B - - Google Patents
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- Publication number
- TW311232B TW311232B TW084107922A TW84107922A TW311232B TW 311232 B TW311232 B TW 311232B TW 084107922 A TW084107922 A TW 084107922A TW 84107922 A TW84107922 A TW 84107922A TW 311232 B TW311232 B TW 311232B
- Authority
- TW
- Taiwan
- Prior art keywords
- window
- transmission window
- electrons
- item
- electron
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 claims description 100
- 239000013078 crystal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 230000001133 acceleration Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000003574 free electron Substances 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 4
- 239000000571 coke Substances 0.000 claims 2
- 230000003116 impacting effect Effects 0.000 claims 2
- 244000140975 Prunus simonii Species 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000003760 hair shine Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 101150064138 MAP1 gene Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
- H01J33/02—Details
- H01J33/04—Windows
Landscapes
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/278,804 US5557163A (en) | 1994-07-22 | 1994-07-22 | Multiple window electron gun providing redundant scan paths for an electron beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW311232B true TW311232B (show.php) | 1997-07-21 |
Family
ID=23066440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084107922A TW311232B (show.php) | 1994-07-22 | 1995-07-31 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5557163A (show.php) |
| EP (1) | EP0801808A1 (show.php) |
| JP (2) | JPH10503322A (show.php) |
| KR (1) | KR970705165A (show.php) |
| CA (1) | CA2194570A1 (show.php) |
| TW (1) | TW311232B (show.php) |
| WO (1) | WO1996003767A1 (show.php) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0904594B9 (en) * | 1996-06-12 | 2003-09-10 | Ushio International Technologies, Inc. | Monolithic anode adapted for inclusion in an actinic radiation source and method of manufacturing the same |
| US7264771B2 (en) | 1999-04-20 | 2007-09-04 | Baxter International Inc. | Method and apparatus for manipulating pre-sterilized components in an active sterile field |
| US7424764B2 (en) * | 1999-09-01 | 2008-09-16 | Hagleitner Hygiene International Gmbh | Brush with locking and detaching structure for disposable head |
| US6750461B2 (en) * | 2001-10-03 | 2004-06-15 | Si Diamond Technology, Inc. | Large area electron source |
| US7148613B2 (en) | 2004-04-13 | 2006-12-12 | Valence Corporation | Source for energetic electrons |
| SE529241C2 (sv) * | 2005-10-26 | 2007-06-05 | Tetra Laval Holdings & Finance | Sensor samt system för avkänning av en elektronstråle |
| JP2010509709A (ja) * | 2006-10-24 | 2010-03-25 | ビー・ナノ・リミテッド | インターフェース、非真空環境内で物体を観察する方法、および走査型電子顕微鏡 |
| JP4620034B2 (ja) * | 2006-11-24 | 2011-01-26 | 浜松ホトニクス株式会社 | 電子線照射装置 |
| JP2008128977A (ja) * | 2006-11-24 | 2008-06-05 | Hamamatsu Photonics Kk | 電子線照射装置 |
| US7656236B2 (en) | 2007-05-15 | 2010-02-02 | Teledyne Wireless, Llc | Noise canceling technique for frequency synthesizer |
| US8179045B2 (en) | 2008-04-22 | 2012-05-15 | Teledyne Wireless, Llc | Slow wave structure having offset projections comprised of a metal-dielectric composite stack |
| US8981294B2 (en) | 2008-07-03 | 2015-03-17 | B-Nano Ltd. | Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment |
| WO2014128699A1 (en) | 2013-02-20 | 2014-08-28 | B-Nano Ltd. | Scanning electron microscope |
| US9202660B2 (en) | 2013-03-13 | 2015-12-01 | Teledyne Wireless, Llc | Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes |
| DE102017001970A1 (de) * | 2016-10-12 | 2018-04-12 | Hydac Process Technology Gmbh | Filtervorrichtung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE934002C (de) * | 1952-02-20 | 1955-10-06 | Licentia Gmbh | Strahlenaustrittsfenster fuer Roentgenroehren, Elektronenroehren und andere elektrische Entladungsgefaesse |
| NL106303C (show.php) * | 1957-12-23 | |||
| US3319318A (en) * | 1964-02-24 | 1967-05-16 | Stanford Research Inst | Thin gas tight window assembly |
| NL149610B (nl) * | 1967-10-03 | 1976-05-17 | Matsushita Electric Industrial Co Ltd | Elektrostatische registratie-inrichting. |
| US3788892A (en) * | 1970-05-01 | 1974-01-29 | Rca Corp | Method of producing a window device |
| DE2501885A1 (de) * | 1975-01-18 | 1976-07-22 | Licentia Gmbh | Elektronendurchlaessiges fenster und verfahren zu dessen herstellung |
| US4455561A (en) * | 1982-11-22 | 1984-06-19 | Hewlett-Packard Company | Electron beam driven ink jet printer |
| US4494036A (en) * | 1982-11-22 | 1985-01-15 | Hewlett-Packard Company | Electron beam window |
| US4468282A (en) * | 1982-11-22 | 1984-08-28 | Hewlett-Packard Company | Method of making an electron beam window |
| FR2581212B1 (fr) * | 1985-04-26 | 1988-06-17 | Commissariat Energie Atomique | Imprimante a canon a electrons |
-
1994
- 1994-07-22 US US08/278,804 patent/US5557163A/en not_active Expired - Fee Related
-
1995
- 1995-07-18 KR KR1019970700366A patent/KR970705165A/ko not_active Withdrawn
- 1995-07-18 EP EP95927311A patent/EP0801808A1/en not_active Ceased
- 1995-07-18 WO PCT/US1995/009167 patent/WO1996003767A1/en not_active Ceased
- 1995-07-18 CA CA002194570A patent/CA2194570A1/en not_active Abandoned
- 1995-07-18 JP JP8505852A patent/JPH10503322A/ja active Pending
- 1995-07-31 TW TW084107922A patent/TW311232B/zh active
-
2004
- 2004-05-21 JP JP2004152086A patent/JP2004239920A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0801808A4 (show.php) | 1997-11-05 |
| US5557163A (en) | 1996-09-17 |
| KR970705165A (ko) | 1997-09-06 |
| CA2194570A1 (en) | 1996-02-08 |
| JPH10503322A (ja) | 1998-03-24 |
| EP0801808A1 (en) | 1997-10-22 |
| JP2004239920A (ja) | 2004-08-26 |
| WO1996003767A1 (en) | 1996-02-08 |
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