TW310120U - High-frequency circuit device and manufacturing method thereof - Google Patents

High-frequency circuit device and manufacturing method thereof

Info

Publication number
TW310120U
TW310120U TW085218985U TW85218985U TW310120U TW 310120 U TW310120 U TW 310120U TW 085218985 U TW085218985 U TW 085218985U TW 85218985 U TW85218985 U TW 85218985U TW 310120 U TW310120 U TW 310120U
Authority
TW
Taiwan
Prior art keywords
manufacturing
circuit device
frequency circuit
frequency
circuit
Prior art date
Application number
TW085218985U
Other languages
English (en)
Inventor
Masao Yamawaki
Tatsuhiko Ikeda
Norihiko Suematsu
Yoshihiro Kashiba
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW310120U publication Critical patent/TW310120U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
TW085218985U 1995-09-04 1995-09-21 High-frequency circuit device and manufacturing method thereof TW310120U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7226449A JPH0974102A (ja) 1995-09-04 1995-09-04 高周波回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW310120U true TW310120U (en) 1997-07-01

Family

ID=16845278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085218985U TW310120U (en) 1995-09-04 1995-09-21 High-frequency circuit device and manufacturing method thereof

Country Status (5)

Country Link
US (1) US6118172A (zh)
JP (1) JPH0974102A (zh)
KR (1) KR100248631B1 (zh)
DE (1) DE19609449C2 (zh)
TW (1) TW310120U (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249503A (ja) 2002-02-26 2003-09-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2004153175A (ja) * 2002-10-31 2004-05-27 Nec Electronics Corp 半導体集積回路及びその半導体基板
JP5487601B2 (ja) * 2008-11-27 2014-05-07 富士電機株式会社 半導体装置およびその製造方法
WO2012132207A1 (ja) * 2011-03-25 2012-10-04 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法及びｓｏｉ基板
KR102100238B1 (ko) 2013-06-25 2020-05-15 인텔 코포레이션 고립된 전하 사이트들을 갖는 메모리 셀 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4418470A (en) * 1981-10-21 1983-12-06 General Electric Company Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits
JPH01302743A (ja) * 1988-05-30 1989-12-06 Mitsubishi Electric Corp 半導体集積回路装置
CA2003138A1 (en) * 1988-11-29 1990-05-29 Dariush Fathy Method of forming a thin silicon layer on an insulator
JP3112102B2 (ja) * 1991-08-01 2000-11-27 キヤノン株式会社 半導体装置
JP2822656B2 (ja) * 1990-10-17 1998-11-11 株式会社デンソー 半導体装置およびその製造方法
US5559349A (en) * 1995-03-07 1996-09-24 Northrop Grumman Corporation Silicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrate

Also Published As

Publication number Publication date
US6118172A (en) 2000-09-12
JPH0974102A (ja) 1997-03-18
DE19609449C2 (de) 2002-11-28
KR970017918A (ko) 1997-04-30
KR100248631B1 (ko) 2000-03-15
DE19609449A1 (de) 1997-03-06

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