TW303487B - - Google Patents
Download PDFInfo
- Publication number
- TW303487B TW303487B TW085105672A TW85105672A TW303487B TW 303487 B TW303487 B TW 303487B TW 085105672 A TW085105672 A TW 085105672A TW 85105672 A TW85105672 A TW 85105672A TW 303487 B TW303487 B TW 303487B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- wafer
- crystal
- peripheral
- rod
- Prior art date
Links
- 238000005498 polishing Methods 0.000 claims description 305
- 239000013078 crystal Substances 0.000 claims description 107
- 235000012431 wafers Nutrition 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 51
- 230000002093 peripheral effect Effects 0.000 claims description 48
- 239000002245 particle Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000003082 abrasive agent Substances 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 208000032544 Cicatrix Diseases 0.000 claims 1
- 239000006061 abrasive grain Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 231100000241 scar Toxicity 0.000 claims 1
- 230000037387 scars Effects 0.000 claims 1
- 238000004513 sizing Methods 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000001174 ascending effect Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 206010041349 Somnolence Diseases 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 101150038956 cup-4 gene Proteins 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15381395 | 1995-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW303487B true TW303487B (de) | 1997-04-21 |
Family
ID=15570671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085105672A TW303487B (de) | 1995-05-29 | 1996-05-14 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0745456B1 (de) |
| KR (1) | KR960043006A (de) |
| DE (1) | DE69615273T2 (de) |
| TW (1) | TW303487B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
| US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| JP2001007064A (ja) * | 1999-06-17 | 2001-01-12 | Sumitomo Metal Ind Ltd | 半導体ウエーハの研削方法 |
| JP4034096B2 (ja) * | 2002-03-19 | 2008-01-16 | 日本碍子株式会社 | 半導体支持装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
| JP3027882B2 (ja) * | 1992-07-31 | 2000-04-04 | 信越半導体株式会社 | ウエーハ面取部研磨装置 |
| JP2798347B2 (ja) * | 1993-07-08 | 1998-09-17 | 信越半導体株式会社 | ウェーハのノッチ部研磨装置 |
| JP2832138B2 (ja) * | 1993-09-30 | 1998-12-02 | 信越半導体株式会社 | ウェーハ外周部の研磨装置 |
| JP2832142B2 (ja) * | 1993-10-29 | 1998-12-02 | 信越半導体株式会社 | ウェーハのノッチ部研磨装置 |
| JPH07171749A (ja) * | 1993-12-20 | 1995-07-11 | Shin Etsu Handotai Co Ltd | ウェーハ外周部の研磨装置 |
| JPH08168946A (ja) * | 1994-12-13 | 1996-07-02 | Shin Etsu Handotai Co Ltd | ウェーハ外周部の研磨装置 |
-
1996
- 1996-05-14 TW TW085105672A patent/TW303487B/zh active
- 1996-05-16 DE DE69615273T patent/DE69615273T2/de not_active Expired - Fee Related
- 1996-05-16 EP EP96303484A patent/EP0745456B1/de not_active Expired - Lifetime
- 1996-05-28 KR KR1019960019606A patent/KR960043006A/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| DE69615273D1 (de) | 2001-10-25 |
| KR960043006A (ko) | 1996-12-21 |
| EP0745456A1 (de) | 1996-12-04 |
| EP0745456B1 (de) | 2001-09-19 |
| DE69615273T2 (de) | 2002-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI364814B (en) | Edge removal of silicon-on-insulator transfer wafer | |
| US6352927B2 (en) | Semiconductor wafer and method for fabrication thereof | |
| US6402596B1 (en) | Single-side polishing method for substrate edge, and apparatus therefor | |
| TW308561B (de) | ||
| JP3247301B2 (ja) | 再生半導体ウェハとその再生方法 | |
| TW415879B (en) | Apparatus and method for chamfering wafer | |
| TW459297B (en) | Method of processing semiconductor wafers to build in back surface damage | |
| US4256535A (en) | Method of polishing a semiconductor wafer | |
| US9604335B2 (en) | Wafer polishing apparatus | |
| EP1475826A2 (de) | Nitrid-Halbleiterwafer und Verfahren zu deren Bearbeitung | |
| EP0791953A2 (de) | Verfahren zur Herstellung von halbleitenden Scheiben | |
| JPH07100748A (ja) | ウェーハ外周部の研磨装置 | |
| JP2002305168A (ja) | 研磨方法及び研磨装置および半導体装置の製造方法 | |
| US7179159B2 (en) | Materials for chemical mechanical polishing | |
| US6465328B1 (en) | Semiconductor wafer manufacturing method | |
| EP1447840A1 (de) | Polierstück und polierverfahren | |
| TW303487B (de) | ||
| TW509991B (en) | Method of manufacturing semiconductor wafer | |
| JP4103808B2 (ja) | ウエーハの研削方法及びウエーハ | |
| TWI244691B (en) | Process for polishing a semiconductor wafer | |
| TW391910B (en) | Method for processing peripheral chamfered portion of wafer and equipment therefor | |
| US6514423B1 (en) | Method for wafer processing | |
| US20020090799A1 (en) | Substrate grinding systems and methods to reduce dot depth variation | |
| JPH07171749A (ja) | ウェーハ外周部の研磨装置 | |
| US20010023082A1 (en) | Grind and single wafer etch process to remove metallic contamination in silicon wafers |