303487 經濟部中央標準局員工消費合作社印製 A7 B7_ 五、發明説明（i ) 發明背景 發明領域 本發明係有關於一用於鏡面磨光晶圓之周圍部位的方 法，及用於執行該方法的裝置。 相關技術說明 —般在執行防止晶園的周園部位被削去的去角步驟， 重叠步驟以使晶圖的厚度產生微小變動，及用於移除裂層 及污染部位的蝕刻步驟後，進行晶圃的鏡面磨光步驟。晶 圓的鏡面磨光步驟包含一對晶圓的主磨光的步驟，及對晶 圓的周園部位鏡面磨光的周圔部位。 在相對於晶園周圍之晶圓的晶體定向中的預定位置處 晶圚提供一定向平坦或一刻痕。定向平坦或刻痕部位用於 在自動製造裝置中裝置晶園周園的定位。因此，在晶圖的 周圍部位之鏡面磨光步驟中，必需對定向平坦或刻痕部位 及其他部位（下文稱爲t周圍"）進行鏡面磨光。 在傳統用於對晶圚之周圓部位進行鏡面磨光的方法中 ，使用一由泡沬樹脂製成的磨光棒。在該方法中，由一含 凹槽（一成形去角凹槽）的磨光棒對晶圓的周圔及定向平 坦進行鏡面磨光，該凹槽中有一區域，對應晶圖的周圍及 定向平坦部位。在此一鏡面磨光步驟中，使用一包含氫氧 化納或含極細S i 02粉末等類似物之鏡面溶液。在該方 法.中爲了鏡面磨光刻痕部位，使用一碟形磨光棒。且在此 例中，當然使用一研磨材料。 本紙張尺度遑用中國國家揉準（CNS ) A4规格（210X297公釐） (請先閲讀背面之注$項再填寫本頁)303487 Printed A7 B7_ by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (i) Background of the Invention Field of the Invention The present invention relates to a method for mirror polishing a peripheral part of a wafer, and for performing the method Device. Relevant technical description: Generally, after performing the de-corner step to prevent the peripheral part of the crystal garden from being cut off, the overlapping step to make a slight change in the thickness of the crystal pattern, and the etching step for removing the cracked layer and the contaminated part, then The mirror polishing step of the crystal garden. The mirror surface polishing step of the crystal circle includes the steps of main polishing of a pair of wafers, and the mirror polished peripheral portion of the crystal circle. At predetermined positions in the crystal orientation with respect to the wafers around the crystal garden, the crystal lattice provides a certain flatness or a score. Oriented flat or scored parts are used for positioning of the crystal garden in the automatic manufacturing equipment. Therefore, in the mirror polishing step of the surrounding part of the crystal pattern, it is necessary to perform mirror polishing on the orientation flat or notched part and other parts (hereinafter referred to as tperiphery). In the conventional method for mirror-polishing the circumference of the crystal, a polishing rod made of foam resin is used. In this method, a polished rod with a groove (a shaped chamfered groove) is used to mirror polish the circumference and orientation of the wafer. There is an area in the groove corresponding to the periphery and orientation of the crystal pattern Flat area. In this mirror polishing step, a mirror solution containing sodium hydroxide or very fine Si02 powder or the like is used. In this method, a mirror-shaped polishing rod is used for mirror-polishing the notch. And in this case, of course, an abrasive material is used. This paper uses the Chinese National Standard (CNS) A4 specification (210X297mm) (please read the $ item on the back before filling this page)
-4 - A7 ___B7 五、發明説明（2 ) 依此方法，一般進行蝕刻矽單晶晶圓的所謂酸蝕刻， 如該晶圓浸在氟氫酸，氮酸及醋酸的混合物中。但是，此 酸蝕刻之缺點爲在重叠後雖然保持矽晶園的平坦度，且需 要髙成本以處理所使用的蝕刻液，最近大部份應用鹼蝕刻 取代蝕刻。但是，當使用鹸蝕刻時，因爲矽晶園的背面或 周圔相當粗糙，晶圓的平坦度下降，因此必薄對晶圚的背 面及周圍予以更進一步處理。尤其是，在鹼蝕刻之後，對 於矽晶圓周園的處理存在一項問題，即必須使用更多的時 間，以使該表面的粗糙度小於預定值，以得到所需的平坦 度，如此所耗時間爲酸蝕刻之數倍。 發明概述 本發明的著眼點在於解決上述問題。本發明的目的係 提供一鏡面磨光方法，由此方法一含滿意平坦度的晶圃表 面可穩定得到，其處理時間短於磨光棒磨光及鏡面磨光裝 置之時間。 經濟部中央標準局員工消費合作社印製 (請先閲讀背谛之注意事項再填寫本頁) 武 爲了達成上述目的，本發明中不只使用磨光棒磨光方 法，而且亦使用捲帶弯光方法，此方法現爲本發明所使 用。捲帶磨光方法係使用其上含研磨顆粒之捲帶的方法。 在捲帶磨光方法中，將晶圓的周園部位壓住使抵住從一捲 帶供應捲軸中所提供的捲帶，而進行磨光。使用過的捲帶 繞著捲帶上升捲軸捲繞以對新表面持績供應捲带至將處理 部位。由轉動捲帶所捲繞之鼓對晶圚的周圍部位進行鏡面 磨光，以在捲帶及晶圖間得到充分的相對速度而磨光晶園 本紙張尺度逡用中國國家樣準（CNS ) A4说格（210X297公釐） 經濟部中央樣準局貝工消費合作社印装 A7 B7 五、發明説明（3 ) 的周圍。 依據本發明者對於磨光棒磨光方法及捲帶磨光方法的 研究發現下列問題。即磨光棒磨光方法所需的處理時間爲 捲帶磨光方法之數倍，方可達到粗糙度小於預定值的方法 磨光表面，且所使用磨光棒的型式在所需的處理時間中產 生變動。另一方面，在所得到的完成表面中'，捲帶磨光方 法含某些固有的限制。 然後，爲了鏡面磨光晶圔的周圍部位，本發明者試著 依序使用捲帶磨光及磨光棒磨光方法，即使用其上含研磨 顆粒的捲帶磨光晶圓的周圍部位，然後，使用含研磨材料 的磨光棒磨光周圍部位。結果，發現在處理時間短於磨光 棒磨光之下，經由依序使用捲帶磨光及磨光棒磨光，可穩 定地得到粗糙度小於預定值的晶圖表面。 圖1用於比較捲帶磨光方法及磨光棒磨光方法。在此 圖中，垂直軸表示平坦程度，橫軸表磨光時間。從圓1中 發現，對於所含預定的平坦度而言，捲帶磨光方法所需得 到鏡面磨光方法的磨光時間較短，但該方法對所得到的完 成表面具某些限制。磨光棒磨光方法需要更多的磨光時間 以得到含預定平坦度的鏡面磨光表面，且時間會依所使用 之磨光棒而變動，但是與捲帶磨光方法比較該方法可得到 更平坦的表面。在圖1中，來自捲帶磨光方法的特性曲線 更向者原點的右方，在所使用的捲帶上所保持的研磨顆粒 的尺寸更小。 本發明係基於上述認知而設計· 本紙張尺度適用t國國家梂率（CNS) A4规格（2丨0X297公釐） ----------f a衣------—訂--------( (請先閲讀背面之注¾事項再填寫本頁) 經濟部中央橾準局貝工消費合作社印裝 S03487 g77五、發明説明（4 ) 依據本發明的設計理念，用於鏡面磨光晶圖的周圍部 位的方法包含：一第一磨光步驟，用於一捲帶磨光晶圖的 周圍部位，該捲帶上含研磨顆粒，及一第二磨光步驟，在 第一步驟後使用含研磨材料之磨光棒磨光晶圃之周圍部位 。本發明的方法可使用在不同的半導體晶圓中，如矽晶圓 ，合成半導體晶園等。 依據本發明，因爲在使用磨光棒磨光晶圜的周國部位 前，進行捲帶磨光其磨光速度快於磨光棒磨光者，所以可 縮短得到含預定平坦度之鏡面磨光表面所需的磨光時間。 而且，由使用捲帶磨光將晶圓的周團部位磨光至某一程库 之後，進行磨光棒磨光，與捲带磨光比較，此得到更精細 的磨光，因此可得到髙平坦度的鏡面磨光。 最好，第一磨光步驟包含一第一刻痕或定向平坦磨光 步驟，用於磨光在晶圓的周圍部位形成的刻痕或定向平坦 部位，此係使用一其上含研磨顆粒的捲帶達成，及第一周 圍磨光步驟，除了使用其上含研磨顆粒的捲帶磨光刻痕或 定向平坦部位外，主要用於磨光晶圓的周圍部位，且第二 磨光步驟包含第二刻痕及定向平坦步驟，其使用磨光棒磨 光刻痕或定向平坦部位，及一第二周園磨光步驟，除了使 用磨光棒磨光刻痕或定向平坦部位外，主要用於定向平坦 晶圃的周圍部位。第一刻痕磨光周圍部位的執行方法爲： 將含硏磨顆粒之捲帶的一部位壓抵住，該磨光可由捲帶支 撐組件而相對於刻痕部位移動。第一周圔磨光步驟的執行 方法爲壓著其上含研磨顆粒之捲帶的一部位，使其抵住晶 (請先閲讀背面之注意事項再填寫本頁)-4-A7 ___B7 5. Description of the invention (2) According to this method, the so-called acid etching for etching silicon single crystal wafers is generally carried out. For example, the wafer is immersed in a mixture of hydrofluoric acid, nitric acid and acetic acid. However, the disadvantage of this acid etching is that although the flatness of the silicon wafer is maintained after the overlap, and the high cost is required to deal with the etching solution used, most of the recent application of alkaline etching instead of etching. However, when using etched etching, because the backside or circumference of the silicon crystal garden is quite rough, the flatness of the wafer is reduced, so the backside and surrounding of the crystal must be thinner and further processed. In particular, after alkali etching, there is a problem with the processing of silicon wafers, that is, more time must be used to make the surface roughness less than a predetermined value to obtain the desired flatness, so The time is several times that of acid etching. SUMMARY OF THE INVENTION The present invention focuses on solving the above-mentioned problems. The object of the present invention is to provide a mirror polishing method, whereby a crystal surface with satisfactory flatness can be stably obtained, and its processing time is shorter than the time of polishing rod polishing and mirror polishing device. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions before filling in this page) Wu To achieve the above purpose, not only the polishing rod polishing method but also the tape bending method are used in the present invention This method is now used by the present invention. The tape polishing method is a method of using a tape containing abrasive particles thereon. In the tape reel polishing method, the peripheral portion of the wafer is pressed against the reel provided from a reel supply reel, and polishing is performed. The used reel is wound around the reel ascending reel to supply the reel to the surface to be processed for the new surface. The drum wound by the rotating tape is used to mirror polish the surrounding parts of the crystal to obtain a sufficient relative speed between the tape and the crystal map. The paper size of the crystal garden is polished using the Chinese National Standard (CNS) A4 said grid (210X297mm) Around the Ministry of Economic Affairs Central Sample Bureau Beigong Consumer Cooperative printed A7 B7 V. Invention description (3). According to the inventors' research on the polishing method of the polishing rod and the tape polishing method, the following problems were found. That is, the processing time required for the polishing method of the polishing rod is several times that of the tape polishing method, in order to achieve the method of roughening the surface with a roughness less than a predetermined value, and the type of polishing rod used in the required processing time Changes. On the other hand, the tape finishing method contains certain inherent limitations in the resulting finished surface. Then, in order to mirror polish the surrounding parts of the crystal, the inventors tried to use the tape polishing and polishing rod polishing methods in sequence, that is, using the tape containing abrasive particles to polish the surrounding parts of the wafer, Then, the surrounding area is polished with a polishing rod containing abrasive materials. As a result, it was found that the crystal pattern surface having a roughness less than a predetermined value can be stably obtained by sequentially using tape polishing and polishing rod polishing under a treatment time shorter than that of polishing rod polishing. Figure 1 is used to compare the tape polishing method and the polishing rod polishing method. In this graph, the vertical axis represents the degree of flatness, and the horizontal axis represents the polishing time. From circle 1, it is found that the tape polishing method requires a shorter polishing time to obtain the mirror polishing method for the predetermined flatness included, but this method has certain limitations on the resulting finished surface. The polishing rod polishing method requires more polishing time to obtain a mirror polished surface with a predetermined flatness, and the time will vary according to the polishing rod used, but this method can be obtained compared with the tape polishing method Flatter surface. In Fig. 1, the characteristic curve from the tape polishing method is further to the right of the origin, and the size of the abrasive particles held on the tape used is smaller. The present invention is designed based on the above knowledge. This paper scale is applicable to the national frame rate (CNS) A4 specification (2 丨 0X297mm) of the t country -------- ((Please read the note ¾ matters on the back before filling in this page) Printed S03487 g77 printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economy V. Description of the invention (4) Design concept according to the invention , The method for mirror polishing the surrounding part of the crystal figure includes: a first polishing step for polishing the surrounding part of the tape with a polishing particle on the tape, and a second polishing step After the first step, a polishing rod containing abrasive materials is used to polish the surrounding parts of the crystal garden. The method of the present invention can be used in different semiconductor wafers, such as silicon wafers, synthetic semiconductor crystal gardens, etc. According to the present invention , Before using the polishing rod to polish the Zhou region of the crystal circle, the tape polishing is faster than the polishing rod polisher, so it can be shortened to obtain a mirror polished surface with a predetermined flatness The polishing time. Moreover, the reel polishing is used to polish the peripheral part of the wafer to a certain library. , Polishing rod polishing, compared with tape polishing, this results in a finer polishing, so you can get a mirror polishing of high flatness. Preferably, the first polishing step includes a first score or orientation The flat polishing step is used to polish the nicks or directional flat parts formed on the periphery of the wafer. This is achieved by using a tape with abrasive particles on it, and the first peripheral polishing step, except for using it The tape containing abrasive particles is used to polish the scoring or directional flat parts, and is mainly used to polish the surrounding parts of the wafer, and the second polishing step includes a second scoring and directional flattening step, which uses a polishing rod to polish The scoring or directional flat parts, and a second round polishing step, in addition to using a polishing rod to polish the scoring or directional flat parts, it is mainly used to align the surrounding parts of the flat crystal garden. The first scoring polishes the surrounding The execution method of the part is: pressing a part of the reel containing the grinding particles against, the polishing can be moved relative to the scored part by the reel support assembly. The execution method of the first round of the polishing step is pressing Which contains abrasive particles A part of the belt, making it against the grain (Please read the notes and then fill in the back of this page)
本紙張尺度適用中困國家揉準（CNS ) A4規格（210X297公釐） 7 經濟部中央揉率局貝工消费合作社印製 A7 __B7 五、發明説明（5 ) 圓的周圍部位，該捲帶繞著一轉動鼓的周圍捲繞，且可相 對於晶園之周團部位移運。 最好，在第一及第二刻痕磨光步驟中的至少一步驟期 間，晶圓在預定的小角度內繞其中心轉動。結果，不只底 部而且刻痕部位的整個表面可均匀磨光。 大致上繞著軸轉動，該軸通過捲帶的接'觸點及晶圓的 周圍部位，且在第一磨光步驟期間，在預定角度內，相對 於晶圓，平行於晶圓的主表面。依據此方法，可對晶圓的 上及下表面上整個周圓去角部位磨光。 最好該第一刻痕磨光步驟的執行方法爲：當供應研磨 材料時，壓著一碟型磨光棒，使得抵著晶圓的刻痕部位。 第二定向平坦磨光步驟的執行方法爲：壓著一圖柱形轉動 磨光棒使抵著定向平坦部位，該磨光棒含一形成去角凹槽 ，此凹槽可接收晶園的定向平坦部位。最好該第二周圔磨 光步驟的執行方法爲：在圖柱磨光棒的內周團表面，壓著 周圔轉動磨光棒使抵著晶圖的周圍部位，該磨光棒具有一 成形之切角凹槽，該凹槽接收晶圓的周圍部位。 最好該晶圓爲矽單晶晶圓在第一磨光步驟之前，對含 去角周圍的晶圖進行鹼性蝕刻。結果不只在較短的處理時 間中得到一具高平坦度的鏡面磨光表面，而且在重叠之後 可保持矽晶園的平坦度，以對於使用蝕刻液的處理浪费之 下減低成本。 依據本發明的設計理念，用於鏡面磨光晶園之周圍部 位的裝置包含：一第一磨光區，用於一捲帶磨光晶圖的周 本紙張尺度遑用中國困家梯準（CNS ) Α4規格（210X297公釐） {請先閲讀背面之注.意事項再填寫本頁) "This paper scale is suitable for the A4 specification (210X297 mm) of the Central Government (CNS) in the troubled countries. 7 Printed by the Ministry of Economic Affairs of the Ministry of Economic Affairs, Beigong Consumer Cooperatives. A7 __B7 5. Description of the invention (5) Around the circle, the tape is wound around It is wound around a rotating drum, and can be displaced relative to the peripheral mass of the crystal garden. Preferably, during at least one of the first and second scoring polishing steps, the wafer rotates about its center within a predetermined small angle. As a result, not only the bottom but also the entire surface of the scored portion can be evenly polished. Rotate substantially around an axis that passes through the tape's contacts and the surrounding parts of the wafer, and during the first polishing step, within a predetermined angle, relative to the wafer, parallel to the main surface of the wafer . According to this method, it is possible to polish the entire rounded corners of the upper and lower surfaces of the wafer. Preferably, the first scoring polishing step is performed by pressing a disc-shaped polishing rod against the scoring portion of the wafer when the abrasive material is supplied. The method for performing the second directional flat polishing step is to rotate the polishing rod against a directional flat part while pressing a cylindrical shape, and the polishing rod includes a chamfered groove formed to receive the orientation of the crystal garden Flat area. Preferably, the execution method of the second round satin polishing step is as follows: on the inner circumferential surface of the polished rod of the figure, pressing the squeegee to rotate the polished rod against the surrounding part of the crystal figure A shaped chamfered groove that receives the surrounding portion of the wafer. Preferably, the wafer is a silicon single crystal wafer. Before the first polishing step, the crystal pattern around the corners is subjected to alkaline etching. As a result, not only can a mirror-polished surface with high flatness be obtained in a short processing time, but also the flatness of the silicon crystal circle can be maintained after overlapping, so as to reduce the cost for the processing using the etching solution. According to the design concept of the present invention, the device for mirror-polishing the surrounding parts of the crystal garden includes: a first polishing area for a roll of Zhouben paper scale with polished crystal maps to use Chinese trapped ladders ( CNS) Α4 specification (210X297mm) (Please read the note on the back. Please fill in this page before you notice) "
-1T 經濟部中央樣準局貝工消費合作杜印製 A7 B7 五、發明説明（6 ) 圍部位，該捲帶上含研磨顆粒，及一第二磨光®，在第一 步驟後使用含研磨材料之磨光棒磨光晶圖之周園部位。 依搛含此結構的鏡面磨光裝置，不只進行捲帶磨光及 磨光棒磨光，如果需要的話，可只進行捲帶磨光及磨光棒 磨光中之一磨光。當進行捲帶磨光及磨光棒磨光兩者時， 在處理時間短於磨光棒磨光之時間下，可穩定得到粗糙度 小於預定值的晶圓表面。 圖形簡述 由下文中的詳細說明及附圖，可更進一步了解本發明 ，但說明僅作爲本發明之例證用，而非用於定義本發明的 限制，且其中： 圖1示本發明中捲帶磨光及磨光棒磨光之兩種磨光方 法下，平坦度與磨光時間之間的關係。 圖2爲本發明之一實施例的鏡面磨光裝置之平面圚； 圖3爲含刻痕部位之晶圓的平面圖； 圓4爲含一定向平坦之晶圓的平面圖； 圖5爲在實施例中捲帶磨光區之載入器之側視圖； 圖6爲依據本發明之實施例磨光裝置中晶園傳送裝置 之部位的透視圖； 圖7爲實施例中捲帶磨光區刻痕磨光部的透視圖； 圖8爲捲帶磨光區中一定向平坦磨光部或一周圍磨光 部之透視圖： 圚9爲實施例中磨光棒磨光區之定向平坦磨光部的側 本紙張尺度適用中國國家梯準（CNS > A4规格（210X297公釐） ----------^，衣—----- 訂^------( (請先閲讀背面之注意事項再填寫本頁) 9 經濟部中央樣準局貝工消費合作杜印製 A7 ____B7 五、發明説明（7 ) 視圖； 圖1 0爲實施例中磨光棒磨光區周園磨光部的透視圖 f 圚1 1爲實施例中磨光棒磨光區一下載器的側視圖。 發明之較佳實施例 圖2示本發明實施例中用於鏡面磨光晶圃之周圍部的 裝置。用於鏡面磨光的裝置1包含第一磨光區，即一捲帶 磨光區2，其可對晶圓的周園部進行捲帶磨光，及第二磨 光區，即一磨光棒磨光區3，其對周圍部進行磨光棒磨光 〇 在此實施例中，在鏡面磨光矽晶園的例子中，在鏡面 磨光步驟之前，對矽晶園進行一去角歩驟，以防止晶圖的 周圍部被切去，一重叠步驟可使晶園厚度的變動較小，及 —鹸性蝕刻，以移除裂縫層或污染部。因此，在重叠之後 矽晶圖磨平易於保持，且與酸性蝕刻比較，使用蝕刻液體 廢物成本相當低。 捲帶磨光區2包含一卡匣連接部A，一包含多個叠稹 晶圓W的卡匣4與A相連接，一用於定位晶圓W的第一晶 園定位部B，如圖3或圖4所示，其可逐一取出卡匣4， 一第一刻痕磨光部卡匣，如圖3所示用於磨光晶圓W的刻 痕磨光N，一第一定向平坦磨光部D，如圖4所示用於磨 光晶園W的定向平坦部Ο，及一第一周圈磨光部E，用於 磨光晶圔W的周園部。在捲帶磨光區2中，於卡匣連接部 本紙張尺度遑用中國困家標率（CNS ) Α4規格（210X 297公釐） -----------{衣-----ίΐτ------( (請先閱讀背面之注*事項再填寫本頁) A7 B7 經濟部中夬標準局員工消費合作社印製 302487_五、發明説明（8 ) A提供一載入器1 〇，且在捲帶磨光區的中心提供—第一 晶圓俥送裝置1 1。在刻痕磨光部C，定向平坦磨光部D 及周圍磨光部E提供對應的第一刻痕磨光裝置1 2，第一 定向平坦磨光裝置1 3，及第一周圍磨光裝置1 4。 載入器10包含一舉升裝置（圖中無），用於將卡匣 4上舉或下降，卡匣4可夾住多個在堆叠態的晶圖W ’及 帶傅送器1 0 a可舉起一晶圖，使其逐一離開卡匣4。載 入器1 0的結構可使得在底部的晶園W可由帶傅送器1 0 輪流從卡匣4中取出。 第一晶圚傅送裝置1 1包含一轉動體1 1 a ，其爲馬 達（圖中無）所驅動以繞垂直中心軸轉動，及如圖2 ’ 6 所示者置於轉動體1 1 a上的四個臂1 1 b。各臂1 1 b 可空氣柱（圖中無）向外延伸，且應用一預定力量在預定 時計時而位在轉動體1 1 a內部。在各臂1 1 b的頂端下 部位提供一吸收碟1 1 c，可由其下表面經真空吸入而持 住一晶園，如Λ 6所示者。各吸收碟1 1 c與一真空泵（ 圖中無）相連通，其間係經一空氣管路，且1 1 c位在臂 1 lb及轉動體1 1 a內。可由馬達1 1 d在中心軸的反 向處轉動吸收碟1 1 c。刻痕磨光裝置1 2包含一轉動鼓 30a ，及一捲帶支撐組件30b，如圖7所示。在轉動 鼓3 0 a的內側，提供一捲帶供應捲軸，可供應一磨光用 之捲帶T，且提供一上升捲軸（圖中無），以舉起T。捲 帶t包含一捲帶底組件及極細緻的研磨顆粒，如S i 〇2粉 末等類似物，且黏著物加以黏附（雖然_中沒有顯示）β Λ張尺度適用中國國家揉準（CNS >Α4规格（2丨0 X 297公釐） HM il. I —^ ^ -- (請先閲讀背面之注意事項再填寫本頁) 訂 -11 - A7 B7 經濟部_央標準局員工消費合作社印裝 五、發明説明（9 ) 亦可使用一含極微小之研磨顆粒覆層覆在捲帶底組件上的 捲帶T。由捲帶供應捲軸所提供的捲帶T再導入轉動鼓 3 0 a之外側，因此以螺旋形式繞轉動鼓周圍捲繞。捲繞 之捲帶T置於捲帶支撐組件3 0 b上’捲帶支撐組件位在 轉動鼓3 0 a外側》然後，捲帶T的頂端導入轉動3 0 a 之內側且繞上升捲軸9轉動鼓3 0 a可由馬達3 0 c反覆 轉動，且上升捲軸（圖中無）可由馬達3 0裝置鼴動而轉 動。在刻痕磨光裝置1 2中，置於捲帶支撐組件3 0 b上 的捲帶T部位壓抵著晶圓W的刻痕部位N，此後由馬達 3 0 d繞上升捲軸捲繞，而由馬達3 0 c使轉動3 0 a反 復轉動。結果，由捲帶T將晶圓w的刻痕部位N磨光*在此 磨光期間，最好在一預定小角度內反復在中心軸上的吸收 碟1 1 c ，因此不只磨光底部，且亦磨光刻痕部位N的側 表面。最好，轉動鼓3 0 a及捲帶支撐組件3 0 b可在與 刻痕部位N靠近及逮離的方向上相對移動。而且，轉動鼓 3 0 a及捲帶支撐組件3 0 b可繞著水平軸旋轉，該軸通 過捲帶T的接觸部位及刻痕部位N，且垂直轉動鼓之上移 動方向。晶圆W可不只繞轉動鼓3 0 a及捲帶支撐組件 3 0 b旋轉，而且亦繞軸轉動。結果，不只磨光底面且亦 磨光在刻痕部位N的上及下切角面。例如，由本案發明人 所有的美國專利申請案案號0 8/5 6 7,1 1 6 2中提出 此轉動鼓及晶圓之轉動機構之蝕刻的細節，其可用於本發 明。 定向平坦磨光裝置13及周園磨光裝置14的定向平 (請先閲讀背面之注意事項再填寫本頁) ，衣. 訂 本紙张尺度遴用中國國家標準（CNS ) A4规格（210X 297公釐） 12 經濟部t夹棣準局員工消費合作杜印裝 B7_ 五、發明説明（l〇 ) 坦之結構均與刻痕磨光裝置12之結構頓似。如圖8所示 ，其結構均含一轉動鼓40a。在榑動鼓40a內側，提 供一捲帶供應捲軸，可供應含極細研磨顆粒的捲帶T，如 S i 02粉末，且提供一上升捲軸，用於舉起捲帶T (圖 -------f _衣！ (請先閲讀嘴面之注•意事項再填寫本頁)-1T Ministry of Economic Affairs Central Bureau of Samples and Printing Co., Ltd. Printed A7 B7 V. Description of the invention (6) The surrounding area, the tape contains abrasive particles, and a second polishing ®, used after the first step The polishing rod of the polishing material polishes the peripheral part of the crystal figure. According to the mirror polishing device with this structure, not only the tape polishing and polishing rod polishing, but also one of the tape polishing and polishing rod polishing can be performed if necessary. When both tape polishing and polishing rod polishing are performed, the wafer surface with a roughness less than a predetermined value can be stably obtained when the processing time is shorter than the polishing rod polishing time. BRIEF DESCRIPTION OF THE DRAWINGS The detailed description and the drawings below can further understand the present invention, but the description is only used as an illustration of the present invention, not to define the limitations of the present invention, and in which: FIG. 1 shows the volume of the present invention Under the two polishing methods of polishing and polishing rod polishing, the relationship between flatness and polishing time. 2 is a plan view of a mirror polishing device according to an embodiment of the present invention; FIG. 3 is a plan view of a wafer with scored parts; circle 4 is a plan view of a wafer with a certain flatness; FIG. 5 is an embodiment Side view of the loader in the middle belt polishing area; FIG. 6 is a perspective view of the part of the crystal park conveyor in the polishing device according to the embodiment of the present invention; FIG. 7 is the score of the belt polishing area in the embodiment A perspective view of the polishing part; FIG. 8 is a perspective view of a certain flat polishing part or a surrounding polishing part in the tape polishing zone: FIG. 9 is the directional flat polishing part of the polishing rod polishing zone in the embodiment The size of the side paper is applicable to China National Standards (CNS & A4 specifications (210X297mm) ---------- ^, clothing ------- order ^ ------ (( Please read the precautions on the back and then fill out this page) 9 A7 ____B7 of Beigong Consumer Cooperation of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Printed on the invention (7) View; Figure 10 is the polishing area of the polishing rod in the embodiment Perspective view of Zhouyuan polishing section f 圚 11 is a side view of a downloader in the polishing area of the polishing rod in the embodiment. Preferred embodiment of the invention Figure 2 shows an embodiment of the invention A device for mirror polishing the periphery of the crystal garden. The device for mirror polishing 1 includes a first polishing area, that is, a tape polishing area 2, which can perform tape polishing on the peripheral portion of the wafer. And the second polishing zone, namely a polishing rod polishing zone 3, which polishes the peripheral part with a polishing rod. In this embodiment, in the example of the mirror polishing silicon crystal garden, in the mirror polishing step Previously, a dehorning step was performed on the silicon crystal garden to prevent the surrounding part of the crystal pattern from being cut off. Therefore, after the overlap, the silicon crystal pattern is easy to maintain, and compared with acid etching, the cost of using etching liquid waste is quite low. The tape polishing area 2 includes a cassette connection portion A, and one contains multiple stacked grains The cassette 4 of the circle W is connected to A, and a first wafer positioning portion B for positioning the wafer W, as shown in FIG. 3 or FIG. 4, it can take out the cassette 4 one by one, and a first score grinding The optical part cassette, as shown in FIG. 3, is used to polish the scoring polish N of the wafer W, and a first directional flat polishing part D, as shown in FIG. The directional flat portion Ο of the polished crystal garden W, and a first round polished portion E are used to polish the peripheral portion of the crystal circle W. In the tape polishing area 2, the paper is present at the cassette connection portion The standard uses the China's poor home standard rate (CNS) Α4 specification (210X 297mm) ----------- {衣 ----- ίΐτ ------ ((please read the back first Note * Please fill in this page again) A7 B7 Printed by Employee Consumer Cooperative of China National Standards Bureau, Ministry of Economics 302487_ V. Description of invention (8) A Provide a loader 1 〇, and provide it in the center of the tape polishing area —The first wafer transfer device 11 1. In the scoring and polishing section C, the directional flat polishing section D and the surrounding polishing section E provide the corresponding first scoring and polishing device 12 and the first directional flat polishing The light device 13 and the first peripheral polishing device 14. The loader 10 includes a lifting device (not shown in the figure) for lifting or lowering the cassette 4. The cassette 4 can hold a plurality of crystals W ′ in a stacked state and a feeder 10 a. Raise a crystal picture and make it leave the cassette 4 one by one. The structure of the carrier 10 allows the crystal park W at the bottom to be taken out of the cassette 4 by the feeder 10 in turn. The first crystal transmitter device 1 1 includes a rotating body 1 1 a driven by a motor (not shown in the figure) to rotate about a vertical central axis, and placed on the rotating body 1 1 a as shown in FIG. 2 ′ 6 On the four arms 1 1 b. Each arm 1 1 b can extend outwards with an air column (not shown in the figure), and it is placed inside the rotating body 1 1 a at a predetermined time by applying a predetermined force. An absorption disc 1 1 c is provided at the lower part of the top of each arm 1 1 b, and a crystal garden can be held by vacuum suction from its lower surface, as shown by Λ 6. Each absorption disc 1 1 c communicates with a vacuum pump (not shown in the figure), passes through an air line, and 1 1 c is located in the arm 1 lb and the rotating body 1 1 a. The absorption disc 1 1 c can be rotated by the motor 11 d in the opposite direction of the central axis. The scoring and polishing device 12 includes a rotating drum 30a and a tape support assembly 30b, as shown in FIG. On the inside of the rotating drum 30 a, a tape supply reel is provided, which can supply a polishing tape T, and a rising reel (not shown in the figure) is provided to lift T. The reel t contains a reel with bottom components and very fine abrasive particles, such as S i 〇2 powder and the like, and the adhesion is adhered (though not shown in _) β Λ Zhang scale is suitable for Chinese national kneading (CNS > Α4 specifications (2 丨 0 X 297 mm) HM il. I — ^ ^-(please read the precautions on the back before filling this page) Order-11-A7 B7 Ministry of Economic Affairs _ Central Standards Bureau Staff Consumer Cooperative Print Fifth, the description of the invention (9) A reel T with a very fine abrasive particle coating on the bottom of the reel can also be used. The reel T provided by the reel supply reel is then introduced into the rotating drum 3 0 a The outer side is therefore wound around the rotating drum in a spiral form. The wound reel T is placed on the reel support assembly 30b '. The reel support assembly is located on the outside of the rotating drum 30a. Then, the reel T The top end is introduced into the inside of the rotating 3 0 a and the drum 3 0 a is rotated around the ascending reel 9 by the motor 3 0 c. The ascending reel (not shown in the figure) can be rotated by the motor 30 device. The scoring polishing device 1 2, the tape T part placed on the tape support assembly 3 0 b is pressed against the scored part N of the wafer W After that, the motor 30 d wraps around the ascending reel, and the motor 30 c rotates the rotation 30 a repeatedly. As a result, the tape T polishes the scored portion N of the wafer w * during this polishing period , It is better to repeat the absorption disc 1 1 c on the central axis within a predetermined small angle, so not only the bottom but also the side surface of the nicked part N. It is better to rotate the drum 3 0 a and the tape The support assembly 3 0 b can move relatively in the direction of approaching and getting away from the scored part N. Moreover, the rotating drum 3 0 a and the tape support assembly 3 0 b can rotate around a horizontal axis, which passes through the tape T Contact part and score part N, and vertically rotate the direction of movement above the drum. Wafer W can not only rotate around the rotating drum 3 0 a and the tape support assembly 3 0 b, but also rotate around the axis. As a result, not only polishing The bottom surface is also polished on the upper and lower corners of the scored part N. For example, the rotating drum and the wafer are proposed in the US Patent Application No. 0 8/5 6 7,1 1 6 2 owned by the inventor of this case The details of the etching of the rotating mechanism can be used in the present invention. Orientation of the flat polishing device 13 and the peripheral polishing device 14 Ping (please read the precautions on the back and then fill out this page), clothing. The paper size selection is based on the Chinese National Standard (CNS) A4 specification (210X 297mm).装 B7_ V. DESCRIPTION OF THE INVENTION (10) The structure of the tank is similar to the structure of the scoring and polishing device 12. As shown in FIG. 8, the structure includes a rotating drum 40a. Inside the moving drum 40a, a The reel supply reel can supply the reel T containing extremely fine abrasive particles, such as Si 02 powder, and provide a rising reel for lifting the reel T (Figure ------- f _clothing! (Please read the notes of the mouth and the matters before filling this page)
,1T 。來自捲帶供應捲軸 之外側，且以螺旋形式繞轉 捲帶T的頂端導入轉動鼓4 可由馬達4 0 c反復轉動轉 無）可由馬達4 0 d加以驅 及周困磨光裝置1 4中，捲 壓抵著定向平坦及晶圓W的 捲軸捲繞，而由馬達40c 由捲帶T將定向平坦部位0 轉動鼓4 0 a可繞轉軸反復 點，該捲帶T含定向平坦部 轉動鼓4 0 a的移動方向（ 磨光定向平坦部位〇及晶画 上及下切角面。 在晶圓定位部B中，由 W的對心。在完成捲帶磨光 晶圖W由組件（圖中無）傳 再加以定位。 磨光棒磨光區3 (即第 位部G，用於定位晶圚W · 的捲帶T再導入轉動鼓4 0 a 動鼓4 0 a周團'捲繞。然後， 0 a內側且繞上升捲軸捲繞。 動鼓40a·上升捲軸（圓中 動。在定向平坦磨光裝置1 3 帶T繞轉動鼓4 0 a捲繞，且 周圍，且由馬達4 0 d繞上升 反復轉動轉動鼓4 0 a，因此 及晶園W的周園磨光。最好， 轉動，該軸通過捲帶T的接觭 位0或晶圖W之周困，且垂直 相對於晶圖W)。結果，不只 W之周圍的側面，且亦磨光其 定位裝置（圓中無）進行晶圓 步驟後，回至晶圓定位部B的 送至晶_界的傳送部f，而不 二磨光區）包含一第一晶圖定 如圓3或圖4所示者，該晶圃 本紙浪尺度適用中明困家標準（CNS ) A4规格（2丨0><297公釐） 13 經濟部中央標準局負工消費合作社印装 A7 B7 五、發明説明（U ) w從傳送部F爲組件（圖中無）所傅送，—第二刻痕磨光 部Η，如圖3所示用於磨光晶圃W的刻痕磨光N —第二定 向平坦磨光部I ，用於磨光圇4中所示之晶圓W的定向平 坦部位0，一周圔磨光部J ，用於磨光晶圚W的周圍磨光 ，及一第二卡匣蝕刻部Κ，其蝕刻放置晶圓W的卡匣4。 在磨光棒磨光區3中，於磨光棒磨光區3的中心提供一第 二晶圚傳送裝置2 1。在第二刻痕磨光部Η，第二定向平 坦磨光部I ，及第二周圍磨光部J對應地提供第二刻痕磨 光裝置2 2，第二定向平坦磨光裝置2 3 ，及第二周圍磨 光裝置2 4。第二卡匣蝕刻部Κ提供一未載入器2 5 β 第二晶園傳送裝置21的結構與第一晶圖傳送裝置 1 1相似。第二晶圓傳送裝置2 1包含一轉動體2 1 a， 其爲馬達（圈中無）所驅動而繞垂直中心軸轉動，且置於 轉動體21a上的四臂21b，如圚2所示者，各臂 2 1 b由空氣柱（圚中無）向外突伸，該柱由預定力在預 定時計中，定位在轉動體2 1 a內側。在各臂2 1 b之頂 端的下部提供一吸收碟2 1 c。吸收碟2 1 c與真空泵（ 圖中無）相連通，其間係經空氣管路（圖中無），其位在 臂2 1 b及轉動體2 1 a內側。可由一馬達（圖中無）而 無吸收碟21c在中心軸上反向轉動。 第二刻痕磨光裝置2 2包含一碟形磨光棒2 2 a，其 由泡沫樹脂或類似物件製成，含一轉動軸，其由在平面上 呈U形的臂2 2 b所支撐，如圖2 b所示者。在此刻痕磨 光裝置22中，由一馬達（圖中無）鼴動磨光棒2 2 a 。轉 本紙張尺度適用中國國家梂準（CNS ) A4規格（2丨OX25»7公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中夬橾準局員工消费合作社印裝 A7 __B7五、發明説明（12) 動磨光棒2 2 a的周圍對心於晶圓W的刻痕處，且壓抵著 刻痕部位N *而供應一研磨材料至接觸面，該材料包含一 氫氧化納（Na 0H)或含極細S i 02粉末等之類似物 的水溶液*結果，晶圓W的刻痕部位N爲轉動磨光棒 2 2 a所磨光。在此磨光期間，含晶圓W的吸收碟繞中心 軸在小角度內轉動，因此不只底部，且刻痕部位N的側面 可磨光。 第二定向平坦磨光裝置2 3包含一由泡沬樹脂或類似 物製成的柱形磨光棒2 3 a ，如圓9所示者，在磨光棒 2 3 a的周围表面，形成一所謂的去角磨光棒凹槽，以接 收晶圚W的定向平坦部位0。可由馬達2 3 c驅動磨光棒 2 3 a而在中心軸上轉動，且可由一舉升裝置（圖中無） 上下傳送。可壓住磨光棒2 3 a之磨光棒凹槽2 3 b的內 表面而抵著晶_界的定向平坦部位0，並對磨光棒的接觸 面供應氫氧化納（N a 0H)或含非常微細S i 02粉末 等的類似物之水溶液，而磨光晶園W的定向平坦部位0。 第二周園磨光裝置2 4包含一由水沬樹脂製成的圖柱 磨光棒24a ，如園10中所示者》在磨光棒24a的內 周圍面上，形成所謂的去角磨光棒凹槽的磨光棒凹槽 2 4 b ，以主要接收晶圆W的周圍部位，而非周園定向平 坦部位◦。.可由馬達2 4 c驅動在中心軸上的磨光棒. 2 4 a而轉動，且可由舉升裝置（圈中無）上下傳送。可 壓著部位而非晶圔W的定向平坦部位0使抵著磨光棒 2 4 a的磨光棒凹槽2 4 b ·且對磨光棒凹槽2 4 b供應 本紙張尺度遠用中國國家操準（CNS ) A4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁), 1T. It comes from the outside of the reel supply reel and is wound around the top end of the reel T in a spiral form. It is introduced into the rotating drum 4 and can be rotated repeatedly by the motor 40 c). It can be driven by the motor 40 d and the peripheral polishing device 14. The winding is pressed against the orientation flat and the reel of the wafer W, and the orientation flat part is rotated by the motor T 40c from the reel T. The rotating drum 4 0a can repeat points around the rotation axis. The reel T includes the orientation flat portion rotating the drum 4 The moving direction of 0 a (polished orientated flat part ○ and the upper and lower cut corners of the crystal drawing. In the wafer positioning part B, the center of W is the center. After finishing the tape reel polishing, the crystal W is composed of the components (not shown in the figure ) Transmission and positioning. Polishing rod polishing zone 3 (that is, the first part G, used to position the crystal T W · The tape T is then introduced into the rotating drum 4 0 a moving drum 4 0 a circumferential group 'winding. Then , 0 a inside and winding around the ascending reel. Movable drum 40a · Ascending reel (moving in a circle. Wrapped around the rotating drum 4 0 a in the orientation flat polishing device 1 3 with T, and around, and by the motor 4 0 d Rotate the drum 4 0 a repeatedly around the ascent, so it polishes the circumference of the crystal garden W. Preferably, rotate, the shaft passes through the joint position 0 or The circumference of the crystal map W is sleepy, and is perpendicular to the crystal map W). As a result, not only the side around W, but also polishing its positioning device (not in the circle) after the wafer step, return to the wafer positioning section B The delivery part f sent to the crystal boundary, not the polished area) contains a first crystal figure fixed as shown in circle 3 or figure 4, and the crystal wave scale of the crystal garden is applicable to the Zhongming Sleepy Standard (CNS) A4 specification (2 丨 0> < 297mm) 13 Printed by the Ministry of Economic Affairs, Central Standards Bureau, Negative Consumer Cooperative A7 B7 V. Description of invention (U) w sent from the transmission department F to components (not shown), — The second scoring and polishing part Η, as shown in FIG. 3, for scoring and polishing N for polishing the crystal garden W— The second directional flat polishing part I, for polishing the wafer shown in the polishing cup 4 Orientation flat part 0 of W, a round polishing part J for polishing around the crystal W, and a second cassette etching part K, which etch the cassette 4 where the wafer W is placed. In the rod polishing zone 3, a second crystal transfer device 21 is provided in the center of the polishing rod polishing zone 3. The second scoring polishing part H, the second directional flat polishing part I, and the second Around The part J correspondingly provides a second scoring polishing device 22, a second directional flat polishing device 23, and a second peripheral polishing device 24. The second cassette etching part K provides an unloader 25 β The structure of the second crystal transfer device 21 is similar to that of the first crystal transfer device 11. The second wafer transfer device 2 1 includes a rotating body 2 1 a, which is driven by a motor (not in the circle) to be wound vertically The central axis rotates, and the four arms 21b placed on the rotating body 21a, as shown in Fig. 2, each arm 2 1 b protrudes outward from an air column (not in the case), the column is subjected to a predetermined force in a predetermined timepiece , Positioned inside the rotating body 21a. At the lower part of the top end of each arm 2 1 b is provided an absorption disc 2 1 c. The absorption disc 2 1 c communicates with a vacuum pump (not shown in the figure), and passes through an air line (not shown in the figure), which is located inside the arm 2 1 b and the rotating body 2 1 a. It can be reversely rotated on the central axis by a motor (not shown in the figure) without the absorption disc 21c. The second scoring polishing device 2 2 includes a dish-shaped polishing rod 2 2 a, which is made of foamed resin or the like, contains a rotating shaft, and is supported by an arm 2 2 b that is U-shaped in plane , As shown in Figure 2 b. In this notch polishing device 22, a polishing rod 2 2 a is moved by a motor (not shown). The standard of this paper is applicable to China National Standard (CNS) A4 (2 丨 OX25 »7mm) (please read the precautions on the back and then fill out this page). Order A7 printed by the Ministry of Economic Affairs of the Ministry of Economic Affairs __B7 V. Description of the invention (12) The circumference of the moving polishing rod 2 2 a is centered on the nicks of the wafer W, and is pressed against the nicks N * and supplies an abrasive material to the contact surface, the material including a Aqueous solution of sodium hydroxide (Na 0H) or ultrafine Si 02 powder and the like * As a result, the scored portion N of the wafer W is polished by the rotating polishing rod 2 2 a. During this polishing, the absorption disk containing the wafer W rotates in a small angle around the central axis, so not only the bottom, but also the side of the scored portion N can be polished. The second directional flat polishing device 23 includes a cylindrical polishing rod 2 3 a made of foam resin or the like, as shown by the circle 9, on the surface around the polishing rod 2 3 a, forming a A so-called chamfered polished rod groove to receive the oriented flat part 0 of the crystal W. The polishing rod 2 3 a can be driven by the motor 2 3 c to rotate on the central axis, and can be transferred up and down by a lifting device (not shown in the figure). It can hold the inner surface of the polishing rod groove 2 3 b of the polishing rod 2 3 a against the orientation flat part 0 of the crystal boundary, and supply sodium hydroxide (N a 0H) to the contact surface of the polishing rod Or an aqueous solution containing very fine Si02 powder or the like, and the orientation flat part 0 of the crystal circle W is polished. The second round garden polishing device 24 includes a figure polishing rod 24a made of water-waist resin, as shown in the garden 10> on the inner peripheral surface of the polishing rod 24a, forming a so-called chamfering mill The polished rod groove 2 4 b of the polished rod groove mainly receives the surrounding part of the wafer W instead of the flat part oriented around the circumference. Can be driven by the motor 2 4 c on the central axis of the polishing rod. 2 4 a and rotate, and can be transferred up and down by the lifting device (not in the circle). The compressible part is not the directional flat part of the crystal W. 0 makes the polisher bar groove 2 4 b against the polisher bar 2 4 a · and supplies the paper to the polisher bar groove 2 4 b. National Standards (CNS) A4 specification (210Χ297mm) (Please read the precautions on the back before filling this page)
15 - 經濟部中央標準局員工消費合作杜印裝 A7 B7 五 '發明説明（13 ) 氫氧化納（N a 0H)或含非常微細S i 02粉末等的類 似物之水溶液而磨光晶圚W的周·部位。 下載器2 5包含與升裝置（圖中無）用於將卡匣4上 下端。該卡匣以堆叠狀態夾住多個晶豳W，及一帶傳送器 2 5 a ，可逐一將晶圓W置入卡匣4中。下載器2 5的結 構可使得晶圖W可由帶傳送器2 5 a逐一載'入卡匣4中， 且逐步舉升。 在第二晶圃定位部位G中，由一定位裝置4晶圓W的 對心工作。 如上所述，在本發明的鏡面晶園周園的方法中，先使 用含硏磨顆粒之捲帶磨光晶圖的周困；然後，使用含研磨 材料的磨光棒磨光該晶圓之周圍部位。 因此，如圖1 1所示，在使用磨光棒磨光晶圜的周圔 部位前進行捲帶磨光其磨光速度於於磨光棒磨光的速度， 所以得到預定平坦度之鏡面磨光表面的磨光時間可縮短。 而且，在由圓柱磨光晶圈的周圍部位至某一程度後，進行 磨光棒磨光（與捲帶磨光比較，其可得到較微細之磨光） ，因此可得髙平坦度的鏡面磨光表面。 依據含此一結構的鏡面磨光裝置，可不只進行捲帶磨 光及磨光棒磨光，且如需要的話，可只進行捲帶磨光及磨 光棒磨光之一。當捲帶磨光及磨光棒磨光均進行時，可穩 定得到粗糙度小於預定值的晶圚表面，而處理時間小於磨 光棒磨光。 雖然已應用含某一限制之特定較佳形式說明本發明， 氏張尺度通用中國國家梯準（CNS ) A4规格（210X 297公釐） ' ： (請先閲讀龙面之注$項再填寫本頁) -Λ -15-The Ministry of Economic Affairs, Central Bureau of Standards, Employee Consumption Cooperation Du Printed A7 B7 Five 'Invention Description (13) Sodium hydroxide (N a 0H) or an aqueous solution containing very fine S i 02 powder and the like and polished the crystal W The part of the week. The downloader 25 contains a lifting device (not shown in the figure) for the upper and lower ends of the cassette 4. The cassette clamps a plurality of wafers W in a stacked state, and a belt conveyor 25a, which can place the wafers W into the cassette 4 one by one. The structure of the downloader 25 allows the crystal map W to be loaded into the cassette 4 one by one by the belt conveyor 25a and gradually lifted. In the positioning site G of the second crystal garden, the wafer W of a positioning device 4 is operated in the center. As described above, in the method of the present invention for a mirror-shaped crystal garden, firstly use a tape containing grinding particles to polish the periphery of the crystal pattern; then, use a polishing rod containing an abrasive material to polish the wafer Surrounding area. Therefore, as shown in FIG. 11, tape polishing is performed before polishing the peripheral part of the crystal circle with the polishing rod, and the polishing speed is faster than the polishing rod polishing speed, so a mirror polishing with a predetermined flatness is obtained The polishing time of the smooth surface can be shortened. Moreover, after polishing the surrounding part of the crystal ring from the cylinder to a certain degree, the polishing rod is polished (compared with the tape polishing, which can obtain a finer polishing), so that a flat mirror surface can be obtained Polish the surface. According to the mirror polishing device having such a structure, not only the tape polishing and the polishing rod polishing can be performed, but also, if necessary, only one of the tape polishing and the polishing rod polishing can be performed. When both tape reel polishing and polishing rod polishing are performed, the crystal surface with a roughness less than a predetermined value can be stably obtained, and the processing time is shorter than the polishing rod polishing. Although a specific preferred form with a certain limitation has been applied to illustrate the present invention, the Shizhang scale is commonly used in China National Standards (CNS) A4 specification (210X 297mm) ': (Please read the note item of dragon face before filling in this Page) -Λ-
*1T -16 - A7 __B7_ 五、發明説明（14 ) 但須知本發明並不限於上述較佳實施例，可對本發明進行 不同的改變及修改而不偏離本發明的精神及觀點。 經濟部中央標準局員工消費合作社印裝 (請先閱讀潰面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 17 -* 1T -16-A7 __B7_ V. Description of the invention (14) However, it should be noted that the present invention is not limited to the above preferred embodiments, and various changes and modifications can be made to the present invention without departing from the spirit and viewpoint of the present invention. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions before filling out this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 17-