第861137〇0號專利申請赛 中文說明書修正頁 B7 民國88年6月呈年6月 五、發明說明（?4 ) mm 煩請委员明示Μ年6月.r日所提之 修正本有無變更貧質内容是K予修aL-e 圖8爲本發明中控制一步進馬達之控制裝置例方塊圖 t 圖9A及9 B說明晶圓之搪磨狀態隨時間改變，圖 9 A爲轉動中晶圓平面圖，圖9 B說明晶圓轉角0與晶圓 轉動N s間關係； 圖10示意圖說明本發明中削切部搪磨裝置另例整體 結構； 圖11爲圖10所示削切部搪磨裝置一部側視圖： 圖l· 2爲圖1 〇所示削切部搪磨裝置一部另一側-視圖 y 圖13顯示壓迫力於晶圓與搪磨石間就整値周圍削切 部提供均勻接觸壓力；及 圖1 4爲本例所用卸載器一例側視圖。 主要元件符號說明： (請先閲讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 1 處理設備 2 削切部搪磨設置 3 削切部拋光設置 2 1 削切部搪磨裝置 2 1 ί a 圓柱形搪磨石 3 1 削切部拋光裝置 W 1 方位平坦部 W 2 圓周部 W 3 邊緣部 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公« ) A7 __ B7 ___ 五、發明説明（1 ) 發明背景 發明領域 本發明有關一種處理半導體晶圓（之稱簡稱晶圓）之 方法，包含一搪磨步驟搪磨晶圓之周圍削切部’並有關一 處理設備，包含用於搪磨周圍削切部之搪磨裝置。 相關技術說明 習知上，晶圓處理方法包含步驟：削切一晶圓之周圍 部以防止周圍部削去，硏磨使晶圓厚度變化小，蝕刻除去 因硏磨粒附著而形成之受損層及污染部，並鏡面拋光周圍 削切部及晶圓主面。一種方法將上述方法之削切及硏磨步 驟之次序顛倒，如述於Nikkan Kogyo報業出版公司於 1994年2月28日出版「半版體材料基礎工程」。然 而，後法中，因晶圓之周圍部於硏磨時保持銳緣，可能於 硏磨時發生周圍部削去，及晶圓主面被斷裂矽片刮傷之危 險。因此，包含於削切步驟後硏磨步驟之方法，如前法， 乃成爲主流。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 線 •有另一改良方法中，削切步騾包含第一硏磨步驟磨圓 削切晶圓之周圍部，利用具大顆粒之砂輪（如8 0 0 )， 及第二硏磨步驟硏磨削切部，利用小顆粒之砂輪（如 1500)，恰於第一硏磨步驟後。根據此法，之後蝕刻 步驟中削切部平坦度略降。但蝕刻步驟後其平坦度較佳使 用大顆粒砂輪之情況佳，可輕易於以後切削切部拋光步驟 中進行加工。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -4- 經濟部中央標準局員工消費合作杜印製 A7 ____B7_ 五、發明説明) 硏磨步驟後緊接進行之蝕刻步驟中，就習知處理砂單 晶晶圓之方法，所謂酸蝕刻，即將晶圓浸入氫氟酸、硝酸 及醋酸混合物中。然而，因蝕刻缺點於硏磨後不易保持晶 圓平坦，且處理使用過蝕刻液廢物成本高，近來大皆使用 鹼蝕刻，即將晶圓浸入氫氧化鈉或氫氧化鉀水溶液中。因 鹼蝕刻爲各向異性，與各向同性之酸蝕刻不同，尤當使用 鹼蝕刻時晶圓周圍或背面粗化，降低晶圓平坦性。因此， 須再對晶圓背面或削切部處理。尤其，鹼蝕刻後對削切部 處理需甚多時間使表面粗度小於預定値而得目標平坦度， 此爲酸蝕刻數倍。當使用鹼蝕刻，亦執行一方法提高晶圓 背面平坦度，其中晶圓設定於一載體上；而和用位於晶圓 上下側之拋光轉枱上之拋光墊同時拋光晶圓正及背面。然 而，如此拋光晶圓正及背面時，會有些問題，即晶圓削切 部被載體內壁刮使削切部截面形狀變形，因此後續半導體 裝置製程中之光蝕步驟中，欲除去之光阻材料留於晶圓周 圍部上。因此，這些問題造成半導體裝置不能更高集積。 發明槪述 本發明鑒於以上問題而發展。本發明一目的提供處理 晶圓之削切部之方法及其處理設備’更降低拋光時間’使 半導體裝置集積度更高。 本發明另一目的提供處理晶圓周圍削切部之方法及其 處理設備，可均勻搪磨周圍削切部。 根據本發明一特性，處理晶圓之周圍削切部之方法中 本紙張尺度適用中國國家梯準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Revised page of Chinese Specification for Patent Application No. 861137〇 B7 June, Republic of China June 5th, 1998. Description of Invention (? 4) mm Members are kindly requested to indicate whether there is any change in the amendments mentioned in June M.r. The content is K 予 修 aL-e. Fig. 8 is a block diagram of an example of a control device for controlling a stepping motor in the present invention. Figs. 9A and 9B show that the wafer honing state changes with time. Fig. 9A is a plan view of the wafer during rotation. FIG. 9B illustrates the relationship between the wafer corner 0 and the wafer rotation N s; FIG. 10 is a schematic diagram illustrating the overall structure of another example of the honing device of the cutting part in the present invention; FIG. 11 is a first honing device of the cutting part shown in FIG. 10 Side view of the part: Figure 1.2 is the other side of the honing device of the cutting part shown in Figure 10-view y Figure 13 shows the pressing force between the wafer and the honing stone to provide uniformity around the cutting part Contact pressure; and FIG. 14 is a side view of an example of the unloader used in this example. Description of the main component symbols: (Please read the precautions on the back before filling in this page >> Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Consumer Cooperatives 1 Processing equipment 2 Cutting and honing settings 3 Cutting and polishing settings 2 1 Cutting and cutting Honing device 2 1 ί a cylindrical honing stone 3 1 Cutting part polishing device W 1 Orientation flat part W 2 Circumferential part W 3 Edge part This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 male « ) A7 __ B7 ___ V. Description of the invention (1) Background of the invention The present invention relates to a method for processing semiconductor wafers (referred to as wafers for short), which includes an honing step for honing the surrounding cutting portions of the wafer 'and Related processing equipment includes a honing device for honing surrounding cutting portions. Related Art Description Conventionally, a wafer processing method includes the steps of: cutting a surrounding portion of a wafer to prevent the surrounding portions from being cut off and honing. Make the thickness of the wafer small, etch away the damaged layer and contaminated parts formed by the attachment of the honing particles, and mirror polish the surrounding cutout and the main surface of the wafer. The order of the steps is reversed, as described in Nikkan Kogyo Newspaper Publishing Co., Ltd. published "Basic Engineering of Half-Material Materials" on February 28, 1994. However, in the latter method, the peripheral edge of the wafer remains sharp during honing During the honing, the peripheral part may be cut off, and the main surface of the wafer may be scratched by the broken silicon wafer. Therefore, the method included in the honing step after the cutting step, as before, has become the mainstream. Ministry of Economic Affairs Printed by the Consumer Standards Cooperative of the Central Bureau of Standards (please read the precautions on the back before filling out this page). Line • In another improvement method, the cutting step includes the first honing step to round and round the wafer. Use a grinding wheel with large particles (such as 800) and honing the cut section in the second honing step, and use a grinding wheel with small particles (such as 1500) just after the first honing step. According to this method, the etching is then performed The flatness of the cut section is slightly reduced in the step. However, the flatness is better after the etching step. It is better to use a large-grain grinding wheel, which can be easily processed in the subsequent cutting and polishing step. The paper size applies to the Chinese National Standard (CNS) A4 specifications (210X 297 (Mm) -4- Consumption cooperation with employees of the Central Standards Bureau of the Ministry of Economic Affairs, printed A7 ____B7_ V. Description of the invention) In the etching step immediately after the honing step, the conventional method for processing sand single crystal wafers is known as acid Etching, that is, immersing the wafer in a mixture of hydrofluoric acid, nitric acid, and acetic acid. However, due to the shortcomings of etching, it is difficult to keep the crystal circle flat after honing, and the cost of disposing of the used etching solution waste is high. Recently, alkaline etching has been used, that is, the wafer is immersed in sodium hydroxide or potassium hydroxide aqueous solution. Alkaline etching is anisotropic, which is different from isotropic acid etching. Especially when alkali etching is used, the periphery or back surface of the wafer is roughened to reduce the flatness of the wafer. Therefore, it is necessary to deal with the back of the wafer or the cut portion. In particular, it takes a lot of time to process the cut portion after alkali etching to make the surface roughness smaller than a predetermined thickness to obtain a target flatness, which is several times that of acid etching. When alkali etching is used, a method is also performed to improve the flatness of the back surface of the wafer, wherein the wafer is set on a carrier; and the front and back surfaces of the wafer are polished simultaneously with the polishing pads on the polishing turntable on the upper and lower sides of the wafer. However, when polishing the front and back of the wafer in this way, there will be some problems, that is, the cut portion of the wafer is scraped by the inner wall of the carrier to deform the cross-sectional shape of the cut portion. Therefore, the light to be removed during the subsequent photo-etching step in the semiconductor device manufacturing process The resist material is left on the periphery of the wafer. Therefore, these problems result in that semiconductor devices cannot be more integrated. SUMMARY OF THE INVENTION The present invention has been developed in view of the above problems. It is an object of the present invention to provide a method for processing a cutting portion of a wafer and a processing device thereof 'reducing the polishing time more' to make the semiconductor device more highly integrated. Another object of the present invention is to provide a method and a processing device for processing a cutting portion around a wafer, which can uniformly polish the surrounding cutting portion. According to a feature of the present invention, in the method for processing the surrounding cutting part of the wafer, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)
*-IT 線 經濟部中央標準局貝工消費合作社印製 A7 B7五、發明説明) ，晶圓包含一方位平坦部，一圓周部具大致相當半徑，及 一邊緣部位於方位平坦部與圓周部間，方法包含：第一搪 磨步驟搪磨晶圓之方位平坦部部（之後簡稱0 F )，以第 一壓迫力F 1相當地壓迫方位平坦部靠於圓柱形搪磨石， 同時第一轉速N S 1轉動晶圓並轉動搪磨石；第2搪磨步 驟搪磨晶圓之圓周部部，以第二壓迫力F 2，相當地壓迫 圓周部靠於圓柱形搪磨石，同時以第二轉速NS 2轉動晶 圓並轉動搪磨石：第三搪磨步驟搪磨晶圓之邊緣部部，以 第三壓迫力F 3相當地壓迫邊緣部靠於圓柱形搪磨石，時 以第三轉速N S 3轉動晶圓並轉動方位平坦部石；及一拋 光步驟拋光搪磨後方位平坦部，搪磨後圓周部及搪磨後邊 緣部；其中晶圓之第一、第二及第三轉速NS 1，NS 2 及NS3彼此不同。 根據此處理方法，可提高晶圓之削切部表面平坦度， 並回復削切部之變形截面形狀，暫時地而藉由搪磨削切部 。結果，可減少對削切部之後續拋光步驟之負擔，並縮短 整個處理所需時間。 .因對方位平坦部，圓周部及邊緣部第一、第二及第三 搪磨中晶圓之轉速NS 1 ，NS 2及NS 3適當彼此不同 ，可於周圍削切部整體上以搪磨石進行大致均勻之搪磨處 理。 較佳地，當分別搪磨晶圓之方位平坦部，圓周部及邊 緣部時控制晶圓轉速NS 1，NS 2及NS 3爲NS 1 < NS2<NS3。理由如下。 (請先聞讀背面之注意事項再填寫本頁)* -Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, A7, B7, 5. Description of the invention) The wafer includes an azimuth flat portion, a circumferential portion with a substantially equivalent radius, and an edge portion located between the azimuth flat portion and the circumferential portion In the meantime, the method includes: honing the azimuth flat portion of the wafer (hereinafter referred to as 0 F) in a first honing step, and pressing the azimuth flat portion against the cylindrical honing stone with a first pressing force F 1, while the first The rotation speed NS 1 rotates the wafer and rotates the honing stone; the second honing step hones the circumferential portion of the wafer and presses the circumferential portion against the cylindrical honing stone with a second pressing force F 2, and simultaneously The second rotation speed NS 2 rotates the wafer and rotates the honing stone: the third honing step hones the edge portion of the wafer and presses the edge portion against the cylindrical honing stone with a third pressing force F 3, The three-speed NS 3 rotates the wafer and rotates the azimuth flat part; and a polishing step polishes the azimuth flat part after honing, the circumferential part after honing, and the edge part after honing; among which the first, second and third of the wafer The rotation speeds NS 1, NS 2 and NS 3 are different from each other. According to this processing method, the surface flatness of the cut portion of the wafer can be improved, and the deformed cross-sectional shape of the cut portion can be restored, and the cut portion can be temporarily honed. As a result, the burden on the subsequent polishing step of the cut portion can be reduced, and the time required for the entire process can be shortened. Since the rotation speeds of the wafers NS 1, NS 2 and NS 3 in the first, second, and third honing of the flat, perimeter, and edge portions are appropriately different from each other, honing can be performed on the surrounding cutting portion as a whole. The stone is subjected to a substantially uniform honing process. Preferably, when the azimuth flat portion, the circumferential portion and the edge portion of the wafer are honed, the wafer rotation speeds NS 1, NS 2 and NS 3 are controlled to be NS 1 < NS 2 < NS 3. The reason is as follows. (Please read the notes on the back before filling this page)
，1T 線 本紙張尺度適用中國國家標準（CNS ) Α4規格（210x297公釐） -6- 經濟部中央標準扃員工消費合作社印製 A7 B7 五、發明説明& ) 對一晶圓之周圍削切部處理能力（拋光’搪磨等）c 可由以大關係表示。， 1T line paper size applies Chinese National Standard (CNS) Α4 size (210x297mm) -6- Central Standard of Ministry of Economy 扃 printed by employee consumer cooperative A7 B7 V. Description of the invention &); The processing capacity (polishing, honing, etc.) c can be expressed in a large relationship.
C = a 1 p V b T 其中a:爲常數（之後a2、a3 ...... an亦爲常數）’ P爲接觸壓力，V b爲相對速度，正比於拋光輪或搪磨石 之轉速Nb，T爲接觸時間，正比於1/NS (NS :晶 圓轉速）。C = a 1 p V b T where a: is a constant (after a2, a3 ...... an is also a constant) 'P is the contact pressure, V b is the relative speed, which is proportional to the polishing wheel or enamel The rotation speeds Nb and T are contact times, which are proportional to 1 / NS (NS: wafer rotation speed).
因此，C=aipNb/NS 根據簡化成一晶圓圓與一搪磨石圈之二圈接觸， p = a3 {F (1/R1 + 1/ R2) } 1/2 ……（1 ) 其中F爲壓迫力。 因此，C = a4Nb {F (1/R1 + 1/ R2) } 1 κ 2 / N S .當a4Nb及F各爲常數Therefore, C = aipNb / NS can be simplified as a wafer circle and two circles of a enamel stone circle, p = a3 {F (1 / R1 + 1 / R2)} 1/2 …… (1) where F is Oppression. Therefore, C = a4Nb {F (1 / R1 + 1 / R2)} 1 κ 2 / N S. When a4Nb and F are each constant
C = a5(l/Rl + 1/ R.2)…/ NS 若假設搪磨石半徑R 1固定，而晶圓W半徑R 2可變 ，固定搪磨能力C於R 2小時需晶圓高轉速，當R 2大時 需晶圓低轉速。即可知能夠於包含方位平坦部，圓周部及 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） (請先閲讀背面之注意事項再填寫本頁) 、vs 經濟部中央標準局員工消費合作社印製 A7 ___B7 _ 五、發明説明6 ) 邊緣部之晶圓W周圍削切部整體上均勻搪磨’利用搪磨 OF部、圓周部及邊緣部時改變晶圓轉速，如表1所示。 表 1 〇F咅W1 圓周部W2 邊緣部W3 R2 大（°° ) 中（Y2) 小（Y3) Ns 小 中 大 根據本發明一特性，處理晶圓之周圍削切部之方法中 ，晶圓包含一方位平坦部，一圓周部具大致相當半徑，及 一邊緣部位於方位平坦部與圓周部間，方法包含：第一搪 磨步驟搪磨晶圓之方位平坦部部（之後簡稱OF)，以第 一壓迫力F1相當地塵迫方位平坦部靠於圓柱形搪磨石， 同時以第一轉速N s 1轉動晶圓並轉動搪磨石；第2搪磨 步驟搪磨晶圓之圓周部部，以第二壓迫力F 2相當地壓迫 圓周部靠於圓柱形搪磨石，同時以第二轉速N s 2轉動晶 圓並轉動搪磨石；第三搪磨步驟搪磨晶圓之邊緣部部，以 第三壓迫力F 3相當地壓迫邊緣部靠於圓柱形搪磨石，同 時以第三轉速N s 3轉動晶圓並轉動方位平坦部石；及一 拋光步驟拋光搪磨後方位平坦部，搪磨後圓周部及搪磨後 邊緣部；其中晶圓之第一、第二及第三壓迫力F 1、F 2 及F 3彼此不同。 根據此處理方法，可提高晶圓之削切部表面平坦度， 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) ,ιτ -8- 經濟部中央標準局員工消費合作社印聚 A7 B7_ 五、發明説明6 ) 並回復削切部之變形截面形狀，暫時地而藉由搪磨削切部 。結果，可減少對削切部之後續拋光步驟之嚴重負擔，並 縮短整個處理所需時間。 因搪磨方位平坦部、圓周部及邊緣部時壓迫力適當彼 此不同，可用搪磨石於整個周圍削切部上進行大致均勻搪 磨。 較佳地，當分別搪磨晶圓之方位平坦部，圓周部及邊 緣部時控制壓迫力FI，F2及F3爲F1>F2>F3 〇 假設搪磨石半徑R 1固定而晶圓半徑R 2 (周圍削切 部各部之曲率半徑）可變，以上等式（1 )中，爲於周圍 削切部整個上取得相同接觸壓力P，即均勻搪磨，當 1/R2小時需大壓迫力，當1/R2大時需小壓迫力， 可知於搪磨OF部、圓周部及邊緣部時分別於晶圓與搪磨 石間所施第一、第二及第三壓迫力間關係爲F 1 > F 2 > F 3時，能於包含〇 F部，圓周部及邊緣部之晶圓W整個 周圍削切部上執行均勻搪磨。 .當於整個周圍削切部上進行搪磨時可決定第一、第二 及第三壓迫力F 1，F 2及F 3於晶圓與搪磨石間提供大 致固定之接觸壓力。 較佳地，拋光步驟包含：第一拋光步驟以第一拋光壓 迫力F p 1藉相當地壓迫方位平坦部靠於一圓柱形拋光輪 而拋光晶圓之方位平坦部，同時以第一拋光轉速N p 1轉 動晶圓並轉動拋光輪；第二拋光步驟以第二拋光壓迫力 (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9- 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明f ) F p 2藉相當地壓迫圓周部靠於圓柱形拋光輪而拋光晶圓 之圓周部，同時以第二拋光轉速Np 2轉動晶圓並轉動拋 光輪；及第三拋光步驟以第三拋光壓迫力F p 3藉相當地 壓迫邊緣部靠於圓柱形拋光輪而拋光晶圓之邊緣部，同時 以第三拋光轉速N p 3轉動晶圓並轉動拋光輪：其中晶圓 之第一、第二及第三拋光轉速Np 1，Np2及Np3彼 此不同。 因對OF部，圓周部及邊緣部拋光時晶圓之轉速 Np 1，Np 2及Np 3彼此適當不同，可於整個周圍削 切部上以拋光輪執行大致均勻之拋光。 當分別地拋光晶圓之〇 F部，圓周部及邊緣部時，晶 圓轉速Npl，NPp2及Np3較佳控制成Npl< Np 2<Np 3。因此可於整個周圍削切部上以拋光輪得 到均句拋光。理由如上例之轉速N s 1，N s 2及N s 3 於搪磨時對晶圓改變。 較佳地，拋光步驟包含：第一拋光步驟以第一抛光壓 迫力F p 1藉相當地壓迫方位平坦部靠於一圓柱形拋光輪 而拋光晶圓之方位平坦部，同時以第一拋光轉速N p 1轉 動晶圓並轉動拋光輪；第二拋光步驟以第二拋光壓迫力 F p 2藉相當地壓迫圓周部靠於圓柱形拋光輪而拋光晶圓 之圓周部，同時以第二拋光轉速N p 2轉動晶圓並轉動拋 光輪；及第三拋光步驟以第三拋光壓迫力F p 3藉相當地 壓迫邊緣部靠於圓柱形拋光輪而拋光晶圓之邊緣部’同時 以第三拋光轉速N p 3轉動晶圓並轉動拋光輪；其中第一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱請背面之注意事項再填寫本頁) 訂 線 -10- 經濟部中央標準局員工消费合作杜印裝 A7 _______B7 五、發明説明6 ) '第二及第三壓迫力Fpl，Fp2及Fp3彼此不同。 由拋光時對方位平坦部，圓周部及邊緣部之壓迫力 Fpl，Fp2及Fp3適當彼此不同，故可用拋光輪於 整個周圍削切部上執行大致均勻之拋光。 第一、第二及第三拋光壓迫力Fpl，Fp2及 Fp3可爲Fpl>Fp2>Fp3。晶圓之第一、第二 及第三拋光轉速Np 1，Np 2及Np 3較佳定爲對晶圓 之方位平坦部，圓周部及邊緣部之處理能力C大致彼此相 等，由以下等式 C = a5,(l//Rl + 1/ R2) 1/2Np’ 其中a 5’爲一常數，R 1爲拋光輪半徑，R2爲方位 平坦部、圓周部或邊緣部之曲率半徑，Np爲用於拋光之 晶圓轉速。 根據本發明另一特性，用於處理一晶圓之周圍削切部 之晶圓處理設備，晶圓包含一方位平坦部，一圓周部及一 邊緣部位於方位平坦部與圓周部之間，設備包含：一圓柱 形轉動搪磨石供搪磨晶圓之方位平坦部、圓周部及邊緣部 :一晶圓轉動件供支承及轉動晶圓；一壓迫件以一壓迫力 相當地壓迫支承於晶圓轉動件上之晶圓靠於搪磨石；一搪 磨位置偵測件供偵測晶圓位置：及一轉速控制件供改變晶 圓受到晶圓轉動件之轉速，根據以搪磨位置偵件之偵測結 果。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 -線' -11 - 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明6 ) 此晶圓處理設備可促成降低拋光時間及半導體裝置更 高集積度。 根據本發明另一特性，用於處理一晶圓之周圍削切部 之晶圓處理設備包含：一圓柱形轉動搪磨石供搪磨晶圓之 方位平坦部，具大致固定半徑之圓周部及邊緣部；一晶圓 轉動件供支承並轉動晶圓；一壓迫件以壓迫力相當地壓迫 支承於晶圓轉動件上之晶圓靠於搪磨石；一搪磨位置偵測 件供偵測晶圓之搪磨位置；及一壓迫力控制件根據以搪磨 位置偵測件所測結果改變壓迫件之壓迫力。 具此結構之晶圓處理設備可促成降低拋光時間及半導 體裝置更高集積度。 上述晶圓處理設備中，較佳地，搪磨位置偵測件包含 一感光器，感光器有一發光件及一受光件以接受發自發光 件之光，其位置在發自發光件之光會被晶圓之圓周部擋住 而不會被方位平坦部擋住。 晶圓處理設備可另包含：一圓柱形轉動拋光輪供拋光 晶圓之方位平坦部、圓周部及邊緣部；一晶圓拋光轉動件 供支承並轉動晶圓；一拋光壓迫件以一壓迫力相當地壓迫 支承於晶圓拋光轉動件上之晶圓靠於拋光輪；一拋光位置 偵測件供偵測晶圓位置，及一拋光轉速控制件、根據以拋 光位置偵測件所測結果改變晶圓拋光轉動件對晶圓之轉速 〇 根據如此結構之晶圓處理設備，除上述優點外，亦可 於整個周圍削切部上得到均勻拋光之效果。 本紙張尺度適用中國囤家標準（CNS ) Α4規格（210Χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 、νβ -12- A7 B7 五、發明説明（10 ) 晶圓處理設備可另包含：一圓柱形轉動拋光輪供拋光 晶圓之方位平坦部，圓周部及邊緣部；一晶圓拋光轉動件 供支承並轉動晶圓；—拋光壓迫件以一壓迫力相當地壓迫 支承於晶圓拋光轉動件上之晶圓靠於拋光輪；一拋光位置 偵測件供偵測晶圓之拋光位置；及—拋光壓迫力控制件’ 根據拋光位置偵測件所測結果改變拋光壓迫件之壓迫力。 根據此結構之晶圓處理設備’除上述優點外，亦可於 整個周圍削切部上得到均勻拋光之效果β 本骜明較佳實施例 圖2爲本發明晶圓處理方法一例。如圖示，本例之晶 圓處理方法包含一削切步驟，一硏磨步驟，一蝕刻步驟， 一雙面拋光步驟，一削切部塘磨及拋光步驟，及一正面拋 光步驟，依序進行之。 (1 )削切步驟 經濟部中央標準局貝工消费合作社印製 (請先閱讀背面之注意事項再填寫本頁) -線 使用內徑鋸切片機或線鋸切片機切片一碇而得晶圓之 周圍部被砂輪磨圓同時供應硏磨液而磨。如此理由爲若晶 圓2周圍部有銳緣，可能於處理時發生周圍部削去或發生 S i屑，此危險可致積體電路性能不良。使用於削切步驟 之砂輪顆粒大小不限定之，但較佳爲3 0 0至8 0 0左右 。此例用於砂輪之接合劑不特定之，但較佳使用金屬接合 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X 297公釐） -13- 經濟部中央標準局員工消費合作社印製 A7 ____ B7 五、發明説明（11 ) (2 )硏磨步驟 完成削切步驟之晶圓之正反面之一或二者再由含硏磨 粒之漿硏磨，如矽石（Si〇2)，锆石（Zr〇2)，鋁 石（A 1 2〇3)等，添加物如脂酸鹽等，加以一定壓力。 雖然晶圓之厚度及平行度決定於以內徑鋸或線鋸切片機切 片碇，實際上必有一些變化。此硏磨步驟用於補償此變化 (3 )蝕刻步驟 將晶圓浸入氫氧化鈉或氫氧化鉀水溶液中而完成晶圓 面蝕刻。已施行硏磨步驟所得之晶圓表面上存有受損層（ 裂開及粗化部）或受污部（硏磨粒沾附之部）。蝕刻步驟 用以除去這些部分。爲此，可用鹼蝕刻及酸蝕刻。較佳使 用鹼蝕刻可輕易保持硏磨後晶圓平坦，並降低處理使用後 蝕劑廢物之成本。 (4 )雙面拋光步驟 .晶圓置於一載具上，晶圓正反面同時由拋光片拋光’ 拋光片置於晶圓上下側之拋光轉抬上，同時供應拋光液。 此雙面拋光步驟可大幅改進晶圓平坦性並改進反面平滑性 以防止發生S i屑。若前步驟使用鹼蝕刻，較佳實施雙面 拋光步驟。反之，若前步驟使用酸蝕刻，則不需雙面拋光 步驟。 本紙張尺度適用中國國家標準（CNS > Μ規格（210X 297公釐） {請先閲讀背面之注意事項再填寫本頁) ,ιτ -線 -14 - A7 ____ B7 五、發明説明（|2 ) (5)削切部搪磨及拋光步驟 (請先閲讀背面之注意事項再填寫本頁) 實施搪磨，以搪磨石硏磨晶圓整個周圍削切部同時控 制施加一定負荷。此步驟可補償晶圓周圍削切部之截面形 狀中變形，此變形產生於前步驟中、如此可部分改進平滑 性並回復削切部截面形狀，這些傷害來自之前硏磨、蝕刻 及雙面拋光步驟。此例搪磨石之固合劑不特定之，但較佳 使用確認陶瓷原材系之固合劑，金屬固合劑，樹脂固合劑 ，金屬樹脂混合固合劑或膠等。因此可改進表面平滑性並 回復前硏磨及蝕刻步驟中變形之削切部截面形狀。之後， 以拋光輪等同時供應拋光液而拋光晶圓整個周圍削切部。 此步驟可除去因搪磨產生表面層之殘餘傷害，以防止以下 製造平滑裝置之步驟中產生矽屑或細粒，解決光蝕步驟中 留於晶圓周圍部上光阻材料部除去之問題。 (6 )正面拋光步驟 以拋光片同時供應拋光液而拋光晶圓正面。 接著，說明本發明上述方法所用之削切部處理設備例 經濟部中央標準局舅工消费合作社印褽 〇 本例中，圖3顯示用於搪磨拋光晶圓之削切部之處理 設備。處理設備1包含一削切部搪磨設備2及一削切部拋 光設備3。處理設備可對具0 F部之晶圓之周圍削切部連 續搪磨及拋光，如圖1所示。 削切部搪磨設備2包含一卡匣聯接部（A )供聯接裝 有多數晶圓W之卡匣4，一定位部（B )供置中由卡匣4 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15- 經濟部中央標準局員工消費合作社印製 A7 _____B7_ 五、發明説明（13 ) 取出之晶圓W及定位晶圓W之〇 F，及一削切部搪磨部（ C )供搪磨晶圓之周圍削切部W。削切部拋光設備3包含 一削切部拋光部（D )供拋光晶圓W之周圍削切部，一晶 圓淸淨部（E )及一卡匣聯接部（F )供聯接一卡甲4以 容納晶圓W。處理設備1中，卡匣聯接部（A)有一裝載 器20,定位部（B)有一拋光裝置（未示），削切部搪 磨部（C )有一削切部搪磨裝置2 1，削切部拋光部（D )有一削切部拋光裝置3 1，晶圓淸淨部（E )有一淸淨 裝置（未示），而卡匣聯接部（F)有一卸載器3 0。處 理設備1中，提供一傳送裝置40，如圖5所示。傳送裝 置4 0用於傳送由裝載器2 0傳送至定位部（B )而定位 於該處之晶圓W至削切部搪磨部（C)，削切部拋光部（ D )及晶圓淸淨部（E )。 裝載器2 0包含一升降裝置（未示）以逐升上或降下 裝有多數晶圓W之卡匣4，及一皮帶輸送器2 0 a逐一由 卡匣4取出晶圓W，如圖4所示。裝載器2 0之結構中， 由皮帶輸送器2 0 a依序由卡匣4取出底部位置處之晶圓 W .，再將晶圓W送至定位部（B )。 傳送裝置4 0具有一臂4 0 a如圖5所示，臂可往復 移動朝著定位部（B )，削切部搪磨部（C )，削切部拋 光部（D)及晶圓淸淨部（E)之安排。臂40 a頂端之 下側上具有一真空夾頭4 0 b。真空夾頭4 0 b經由空氣 管（未示）與未示之真空泵相通，故可用真空吸力保持晶 圓W於真空夾頭4 0 b之下表面上。用未示升降裝置移動 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） II-------ί------IT------線-. * yf. (請先閱讀背面之注意事項再填寫本頁) -16- 經濟部中央標準局貝工消費合作社印製 A7 ______B7_ 五、發明説明纟4 ) 真空夾頭4 0 b上下移動。 削切部搪磨裝置21包含一周圍具成形削切槽之圓柱 形搪磨石2 1 a，如圖3，6及7所示。削切部搪磨裝置 2 1中，由一馬達2 1 b轉動搪磨石2 1 a。藉壓迫晶圓 W削切部靠於搪磨石2 1 a之成形削切槽同時慢慢轉動晶 圓W而對晶圓w削切部進行搪磨。削切部搪磨裝置2 1中 ’晶圓W可接近或分開於搪磨石2 1 a以執行搪磨。搪磨 時’以預定負荷使晶圓W削切部壓靠搪磨石2 1 a。 亦即，搪磨裝置2 1具有一氣力筒2 1 d由交換閥 2 1 e之工作空氣操作。氣力筒2 1 d之活塞桿2 1 f — 端接觸一臂2 1 h之側面而壓迫之，並往復繞一軸桿 2 l g擺動。結果，藉由活塞桿2 1 f突起，臂2 lh繞 軸桿21g轉動於圖7Y方向而產生壓迫力F於搪磨石 2 1 a與晶圓W間。 圖6及7中，數字2 1 i代一真空夾頭用真空吸力保 持晶圓W於上，其裝於一晶圓轉軸2 1 j上。晶圓轉軸 2 1 j附近有一晶圓轉速偵測器2 1 k。晶圓轉速偵測器 2 1 k可偵測晶圓轉軸2 1 j之轉速，即步進馬達2 1 c 轉速。搪磨石轉軸2 1 1附近有一搪磨石轉速偵測器 2 lm以偵測搪磨石轉軸2 1 1轉速。 數字2 3爲一晶圓搪磨位置偵測器，其包含一感光器 具一發光部2 3 a及一受光部2 3 b以偵測晶圓W之OF 部，圓周部及邊緣部。晶圓塘磨位置偵測器位於發自發光 部2 3 a之光被晶圓之圓周部W2擋住，但不會被OF部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 -線 -17- 經濟部中央標準局員工消费合作衽印装 A7 B7 五、發明説明纟5 ) w 1擋住。因此，以發自發光部2 3 a之光未抵受光部 2 3 b，邊緣部圓周部W2通過感光器時由圓周部W2攔 截’故感光器測出圓周部W2位於搪磨位置。當晶圓〇 F 部W 1通過接近感光器，感光器藉發光部2 3 a之光抵受 光部2 3 b偵測0 F部W 1於搪磨位置。可藉偵測光攔截 狀態至受光狀態之變化而進行偵測邊緣部W3，反之亦然 〇 數字2 1 〇爲一壓迫力偵測器以偵測氣力筒2 1 d中 工作空氣壓力，即搪磨石2 1 a與晶圓W間壓迫力F。數 字22爲一控制裝置。 對控制裝置22輸入來自壓迫力偵測器21〇有關搪 磨石2 1 a與晶圓W間壓迫力F之氣力筒2 1 d中目前工 作空氣壓力資料，來自搪磨石轉速偵測器2 1 m之搪磨石 2 1 a轉速N b資料，來自晶圓轉速偵測器2 1 k之步進 馬達2 1 c轉速，即晶圓轉速N s之資料，及來自晶圓搪 磨位置偵測器2 3之晶圓W受搪磨位置之資料。根據輸入 資料，控制裝置2 2進行步進馬達2 1 c最佳轉速運算並 輸出結果至步進馬達2 1 c。 接著，以下說明本發明中晶圓轉速控制機構。 圖8爲控制裝置2 2之方塊圖，其包含一搪磨位置判 定裝置2 2 a，~晶圓轉速設定裝置2 2 b，一轉速比較 器22c，及一晶圓轉速計算單元22d。 晶圓轉速設定裝置2 2 b根據由壓迫力偵測器2 1 〇 所測晶圓W與搪磨石2 1 a間壓迫力F設定晶圓基準轉速 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 線 -18- A7 ------B7______ 五、發明説明粕） N 〇 (晶圓周界轉速），並根據搪磨石轉速偵測器2 1 m 所測搪磨石轉速N b。 轉速比較器2 2 c用於計算晶圓基準轉速N 〇與所測 晶圓W轉速N w間偏差△ n。晶圓搪磨位置判定裝置 2 2 a根據晶圓搪磨位置偵測器2 3之所測訊號X w輸入 計算搪磨位置，以辨別〇 F部、圓周部及邊緣部間搪磨位 置’並根據搪磨位置送出判定訊號（對應OF部、圓周部 及邊緣部）至晶圓轉速計算單元2 2 d。 晶圓轉速計算單元2 2 d包含一記億體2 2 e，其中 預先貯存預定修正値。晶圓轉速計算單元2 2 d中，根據 判定訊號（對立OF部SW1，圓周部SW2或邊緣部 sw3 )由記億體取出一修正値Sw，並根據以下等式計 算修正後轉速N s而輸出至步進馬達2 1 c。C = a5 (l / Rl + 1 / R.2) ... / NS If it is assumed that the enamel stone radius R 1 is fixed and the wafer W radius R 2 is variable, the fixed enamel capacity C requires a wafer height of R 2 hours Rotation speed. When R 2 is large, the wafer rotation speed is low. It can be known that the Chinese National Standard (CNS) A4 specification (210'〆297 mm) can be applied to the azimuth flat portion, the circumferential portion and the paper size (please read the precautions on the back before filling this page), vs. the center of the Ministry of Economy Printed by the Consumer Bureau of Standards Bureau A7 _B7 _ V. Description of the invention 6) The wafers around the edge W are uniformly honed on the whole. The wafer speed is changed when the OF part, the peripheral part and the edge part are honed, such as Table 1 shows. Table 1 〇F 咅 W1 Circumferential portion W2 Edge portion W3 R2 Large (°°) Medium (Y2) Small (Y3) Ns Small Medium Large According to a feature of the present invention, in a method for processing a cutting portion around a wafer, the wafer The method includes: a azimuth flat portion, a circumferential portion having a substantially equivalent radius, and an edge portion located between the azimuth flat portion and the circumferential portion. The method includes: honing the azimuth flat portion (hereinafter referred to as OF) of the wafer in a first honing step, With the first pressing force F1, the azimuth flat part is relatively pressed against the cylindrical enamel stone, and at the same time, the wafer is rotated and the enamel stone is rotated at the first rotation speed N s 1; the second honing step is used for honing the circumference of the wafer. Part, the second pressing force F 2 is applied to press the circumferential part against the cylindrical enamel stone, and the wafer is rotated at the second rotation speed N s 2 and the enamel stone is rotated; the third honing step is used to hone the edge of the wafer Partly, pressing the edge part against the cylindrical enamel stone with the third pressing force F 3, while rotating the wafer at a third rotation speed N s 3 and rotating the azimuth flat stone; and a polishing step after polishing and honing the azimuth Flat part, peripheral part after honing and edge part after honing; , Second and third pressing force F 1, F 2 and F 3 different from each other. According to this processing method, the flatness of the surface of the cut portion of the wafer can be improved. This paper size applies the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) (please read the precautions on the back before filling this page), ιτ- 8- The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China printed A7 B7_ V. Description of the invention 6) and restore the deformed cross-sectional shape of the cutting section, and temporarily cut the section by honing. As a result, it is possible to reduce a severe burden on the subsequent polishing step of the cut portion and shorten the time required for the entire process. Because the pressing force is appropriately different when honing the flat part, the circumferential part, and the edge part, the honing stone can be used to perform honing on the entire surrounding cutting part. Preferably, the compressive force FI is controlled when the azimuth flat portion, the circumferential portion and the edge portion of the wafer are honed separately, and F2 and F3 are F1 > F2 > F3 假设 assuming that the enamel stone radius R 1 is fixed and the wafer radius R 2 (The radius of curvature of each part of the surrounding cutting part) is variable. In the above equation (1), in order to obtain the same contact pressure P throughout the surrounding cutting part, that is, uniform honing, when 1 / R2 hours, a large pressing force is required. When 1 / R2 is large, a small pressing force is required. It can be seen that the relationship between the first, second, and third pressing forces applied between the wafer and the enamel stone when the OF portion, the peripheral portion, and the edge portion are honed is F 1 > F 2 > In F 3, uniform honing can be performed on the entire cutting portion of the wafer W including the OF portion, the circumferential portion, and the edge portion. The first, second, and third pressing forces F1, F2, and F3 can be determined to provide a substantially fixed contact pressure between the wafer and the honing stone when honing on the entire surrounding cutting portion. Preferably, the polishing step includes: the first polishing step polishes the azimuthal flat portion of the wafer by first pressing the azimuth flat portion against a cylindrical polishing wheel with a first polishing pressing force F p 1, and at the same time using a first polishing rotation speed N p 1 turns the wafer and rotates the polishing wheel; the second polishing step uses the second polishing pressure (please read the precautions on the back before filling this page) The size of the paper is applicable to China National Standard (CNS) A4 (210X297) (Centi) -9- Printed by A7 B7, Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the invention f) F p 2 Polish the circumference of the wafer by pressing the circumference against the cylindrical polishing wheel, and The second polishing speed Np 2 rotates the wafer and rotates the polishing wheel; and the third polishing step uses the third polishing pressing force F p 3 to considerably press the edge portion against the cylindrical polishing wheel to polish the edge portion of the wafer, and at the same time, the first The three polishing rotation speeds N p 3 rotate the wafer and rotate the polishing wheel: wherein the first, second, and third polishing rotation speeds of the wafers Np 1, Np2, and Np3 are different from each other. Because the rotation speeds of the wafers Np 1, Np 2 and Np 3 are appropriately different from each other when the OF portion, the peripheral portion and the edge portion are polished, it is possible to perform a substantially uniform polishing with a polishing wheel on the entire peripheral cutting portion. When the 0F portion, the circumferential portion, and the edge portion of the wafer are polished separately, the wafer rotation speeds Npl, NPp2, and Np3 are preferably controlled to Npl < Np2 < Np3. As a result, uniform polishing can be achieved with a polishing wheel over the entire surrounding cutout. The reason is as the above example, the rotation speeds N s 1, N s 2 and N s 3 change the wafer during honing. Preferably, the polishing step includes: the first polishing step polishes the azimuthal flat portion of the wafer by first pressing the azimuth flat portion against a cylindrical polishing wheel with a first polishing pressing force F p 1, and at the same time using a first polishing rotation speed N p 1 rotates the wafer and rotates the polishing wheel; the second polishing step uses the second polishing pressing force F p 2 to considerably press the circumferential portion against the cylindrical polishing wheel to polish the peripheral portion of the wafer, and at the same time, the second polishing speed N p 2 rotates the wafer and rotates the polishing wheel; and the third polishing step uses the third polishing pressing force F p 3 to considerably press the edge portion against the cylindrical polishing wheel to polish the edge portion of the wafer at the same time as the third polishing The rotation speed N p 3 rotates the wafer and rotates the polishing wheel; the first paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling this page). 10- Consumption cooperation between employees of the Central Bureau of Standards of the Ministry of Economic Affairs Du printed equipment A7 _______B7 V. Description of the invention 6) 'The second and third pressures Fpl, Fp2 and Fp3 are different from each other. Since the pressing forces Fpl, Fp2, and Fp3 on the azimuth flat portion, the circumferential portion, and the edge portion are appropriately different from each other during polishing, a polishing wheel can be used to perform substantially uniform polishing on the entire surrounding cutout. The first, second and third polishing pressing forces Fpl, Fp2 and Fp3 may be Fpl > Fp2 > Fp3. The first, second, and third polishing speeds Np 1, Np 2, and Np 3 of the wafer are preferably set to the flat portion of the wafer, and the processing capacities C of the peripheral portion and the edge portion are approximately equal to each other. C = a5, (l // Rl + 1 / R2) 1 / 2Np 'where a 5' is a constant, R 1 is the radius of the polishing wheel, R 2 is the radius of curvature of the azimuth flat, circumferential or edge portion, and Np is Speed of wafer used for polishing. According to another feature of the present invention, a wafer processing apparatus for processing a peripheral cut portion of a wafer. The wafer includes an azimuthal flat portion, a circumferential portion and an edge portion located between the azimuthal flat portion and the circumferential portion. Contains: a cylindrical rotating enamel stone for flattening the azimuth of a wafer, a circumferential portion and an edge portion: a wafer rotating member for supporting and rotating the wafer; a pressing member compressing and supporting the wafer on the wafer with a pressing force The wafer on the circular rotating part rests on the honing stone; a honing position detecting part for detecting the wafer position: and a rotation speed control part for changing the rotation speed of the wafer subject to the wafer rotating part. Detection results of the case. This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) (Please read the notes on the back before filling this page) Order-Line '-11-Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention 6) The wafer processing equipment can contribute to reducing polishing time and higher integration of semiconductor devices. According to another feature of the present invention, a wafer processing apparatus for processing a peripheral cutting portion of a wafer includes: a cylindrical rotating enamel stone for flattening the azimuth of the wafer, a circumferential portion having a substantially fixed radius, and Edge part; a wafer rotating part for supporting and rotating the wafer; a pressing part for pressing the wafer supported on the wafer rotating part against the honing stone with a pressing force; a honing position detecting part for detecting The wafer honing position; and a pressing force control part for changing the pressing force of the pressing part according to the measurement result of the honing position detecting part. The wafer processing equipment having this structure can reduce the polishing time and the higher integration of the semiconductor device. In the above-mentioned wafer processing equipment, preferably, the honing position detecting member includes a photoreceptor, and the photoreceptor has a light-emitting member and a light-receiving member to receive light emitted from the light-emitting member. It is blocked by the peripheral portion of the wafer and not by the azimuth flat portion. The wafer processing equipment may further include: a cylindrical rotating polishing wheel for polishing the azimuth flat portion, the circumferential portion and the edge portion of the wafer; a wafer polishing rotating member for supporting and rotating the wafer; a polishing pressing member with a pressing force The wafer supported on the wafer polishing rotating part is quite pressed against the polishing wheel; a polishing position detecting part is used to detect the wafer position; and a polishing speed control part is changed according to the measurement result of the polishing position detecting part. The speed of wafer polishing rotating part to wafer. According to the wafer processing equipment with such a structure, in addition to the above advantages, the effect of uniform polishing can also be obtained on the entire surrounding cutting portion. This paper size is applicable to China Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page), νβ -12- A7 B7 V. Description of the invention (10) Wafer processing equipment It may further include: a cylindrical rotating polishing wheel for polishing the azimuth flat portion, the circumferential portion and the edge portion of the wafer; a wafer polishing rotating member for supporting and rotating the wafer;-the polishing pressing member presses the support considerably with a pressing force The wafer on the wafer polishing rotating part rests on the polishing wheel; a polishing position detecting part is used to detect the polishing position of the wafer; and-the polishing pressing force control part 'changes the polishing pressing force according to the measurement result of the polishing position detecting part The pressure of the pieces. In addition to the above-mentioned advantages, the wafer processing equipment according to this structure can also obtain the effect of uniform polishing on the entire surrounding cutting section. [Benefit of the Preferred Embodiment] FIG. 2 shows an example of the wafer processing method of the present invention. As shown in the figure, the wafer processing method of this example includes a cutting step, a honing step, an etching step, a double-side polishing step, a cutting and polishing step and a polishing step, and a front-side polishing step, in that order. Do it. (1) Cutting step Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page)-Use an internal diameter saw slicer or a wire saw slicer to slice and get the wafer The surrounding area is rounded by a grinding wheel while supplying honing fluid. The reason for this is that if there is a sharp edge around the crystal circle 2, the peripheral part may be chipped off or Si chips may be generated during processing, which may cause the integrated circuit performance to be poor. The particle size of the grinding wheel used in the cutting step is not limited, but it is preferably about 300 to 800. The bonding agent used in this example is not specific, but metal bonding is preferred. The paper size is applicable to Chinese National Standards (CNS) M specifications (210X 297 mm). -13- Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ____ B7 V. Description of the invention (11) (2) Honing step One or both of the wafers on both sides of the wafer where the cutting step is completed are then honed with a slurry containing honing grains, such as silica (Si〇2), Zircon (ZrO2), bauxite (A 1 2 03), and the like, additives such as fatty acid salts, etc., under a certain pressure. Although the thickness and parallelism of the wafer are determined by cutting the wafer with an internal diameter saw or a wire saw microtome, there must be some changes in practice. This honing step is used to compensate for this change. (3) Etching step The wafer surface is etched by immersing the wafer in an aqueous solution of sodium hydroxide or potassium hydroxide. A damaged layer (cracked and roughened portion) or a contaminated portion (a portion to which the honing grains adhere) exist on the surface of the wafer obtained after the honing step. An etching step is used to remove these parts. For this purpose, alkali etching and acid etching can be used. It is better to use alkaline etching to keep the wafer flat after honing and reduce the cost of disposing of the used etchant waste. (4) Double-side polishing step. The wafer is placed on a carrier, and the front and back sides of the wafer are simultaneously polished by the polishing sheet. The polishing sheet is placed on the polishing turn of the upper and lower sides of the wafer, and at the same time, the polishing liquid is supplied. This double-side polishing step can greatly improve wafer flatness and reverse surface smoothness to prevent Si chips. If the previous step uses alkali etching, a double-sided polishing step is preferably performed. Conversely, if the previous step uses acid etching, a double-sided polishing step is not required. This paper size applies to Chinese national standards (CNS > M specifications (210X 297 mm) {Please read the precautions on the back before filling this page), ιτ -line -14-A7 ____ B7 V. Description of the invention (| 2) (5) Steps of honing and polishing of the cutting part (please read the precautions on the back before filling this page) Implement honing, honing the entire cutting part around the wafer with a honing stone while controlling the application of a certain load. This step can compensate for the deformation in the cross-sectional shape of the cutout around the wafer. This deformation is generated in the previous step. This can partially improve the smoothness and restore the cross-sectional shape of the cutout. These injuries come from previous honing, etching and double-side polishing. step. In this example, the fixing agent of the enamel is not specified, but it is preferable to use a ceramic raw material-based fixing agent, a metal fixing agent, a resin fixing agent, a metal-resin mixed fixing agent, or a glue. As a result, the surface smoothness can be improved and the cross-sectional shape of the cut portion deformed in the previous honing and etching steps can be restored. After that, the entire cutting portion around the wafer is polished by simultaneously supplying a polishing liquid using a polishing wheel or the like. This step can remove the residual damage of the surface layer caused by honing to prevent the generation of silicon chips or fine particles in the following steps of manufacturing the smoothing device, and solve the problem of removing the photoresist material portion left on the periphery of the wafer in the photoetching step. (6) Front surface polishing step The front surface of the wafer is polished with a polishing sheet while supplying a polishing liquid. Next, an example of processing equipment for a cutting section used in the above method of the present invention will be described. The seal of the cutting section for honing and polishing a wafer is shown in FIG. 3 in this example by FIG. The processing apparatus 1 includes a cutting-section honing apparatus 2 and a cutting-section polishing apparatus 3. The processing equipment can continuously grind and polish the cutting portion around the wafer with 0 F portion, as shown in FIG. 1. The cutting-section honing equipment 2 includes a cassette coupling section (A) for coupling the cassette 4 with a large number of wafers W, and a positioning section (B) for the cassette 4 during the installation. The paper size applies to Chinese national standards ( CNS) A4 specification (210X297 mm) -15- A7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs __B7_ V. Description of the invention (13) The wafer W taken out and the positioning wafer W 0F, and a cutting section The honing section (C) is a cutting section W for honing the wafer. The cutting part polishing device 3 includes a cutting part polishing part (D) for polishing the surrounding cutting part of the wafer W, a wafer cleaning part (E) and a cassette coupling part (F) for connecting a nail 4 to accommodate wafer W. In the processing equipment 1, the cassette coupling portion (A) has a loader 20, the positioning portion (B) has a polishing device (not shown), and the cutting portion honing portion (C) has a cutting portion honing device 21. The cutting part polishing part (D) has a cutting part polishing device 31, the wafer cleaning part (E) has a cleaning device (not shown), and the cassette coupling part (F) has an unloader 30. In the processing equipment 1, a transmission device 40 is provided, as shown in FIG. The transfer device 40 is used to transfer the wafer W transferred from the loader 20 to the positioning portion (B) to the cutting portion honing portion (C), the cutting portion polishing portion (D), and the wafer.淸 Net Department (E). The loader 20 includes a lifting device (not shown) to lift or lower the cassette 4 containing a large number of wafers W, and a belt conveyor 2 a to take out the wafers W from the cassette 4 one by one, as shown in FIG. 4. As shown. In the structure of the loader 20, the wafer W at the bottom position is sequentially taken out of the cassette 4 by the belt conveyor 20a, and then the wafer W is sent to the positioning portion (B). The conveying device 40 has an arm 4 0 a. As shown in FIG. 5, the arm can be reciprocated toward the positioning portion (B), the cutting portion honed portion (C), the cutting portion polishing portion (D), and the wafer. Arrangement of Net Department (E). A vacuum chuck 40b is provided on the lower side of the top of the arm 40a. The vacuum chuck 40b communicates with an unshown vacuum pump through an air pipe (not shown), so the vacuum circle W can be maintained on the lower surface of the vacuum chuck 40b. Use the lifting device not shown to move the paper scale to the Chinese National Standard (CNS) A4 specification (210X 297 mm) II --------------- IT ------ line-. * yf. (Please read the notes on the back before filling out this page) -16- Printed by Aigong Consumer Cooperative, A7, Central Standards Bureau, Ministry of Economic Affairs A7 ______B7_ V. Description of Invention 纟 4) Vacuum chuck 4 0 b moves up and down. The cutting-section honing device 21 includes a cylindrical honing stone 2 1 a with a shaped cutting groove around it, as shown in FIGS. 3, 6 and 7. In the honing device 21 for the cutting part, the honing stone 2 1 a is rotated by a motor 2 1 b. The wafer W cut portion is honed by pressing the wafer W cut portion against the forming cut groove of the honing stone 21a while slowly rotating the wafer circle W. In the cutting portion honing apparatus 21, the wafer W may be approached or separated from the honing stone 21a to perform honing. At the time of honing ', the wafer W cutting portion is pressed against the honing stone 21a at a predetermined load. That is, the honing device 2 1 has a pneumatic cylinder 2 1 d operated by the working air of the exchange valve 2 1 e. The piston rod 2 1 f of the pneumatic cylinder 2 1 d — the end contacts the side of the arm 2 1 h and presses it, and swings back and forth around a shaft 2 l g. As a result, with the protrusion of the piston rod 2 1 f, the arm 2 lh rotates around the shaft 21 g in the direction of FIG. 7Y to generate a pressing force F between the honing stone 2 1 a and the wafer W. In Figs. 6 and 7, the numeral 2 1 i of a vacuum chuck holds a wafer W on it with a vacuum suction force, and is mounted on a wafer rotating shaft 2 1 j. A wafer speed detector 2 1 k is located near the wafer rotating shaft 2 1 j. The wafer speed detector 2 1 k can detect the rotation speed of the wafer rotating shaft 2 1 j, that is, the rotation speed of the stepping motor 2 1 c. There is a honing stone rotating speed detector 2 lm near the honing stone rotating shaft 2 1 1 to detect the honing stone rotating shaft 2 1 1 speed. Numeral 23 is a wafer honing position detector, which includes a photoreceptor, a light emitting portion 2 a and a light receiving portion 2 3 b to detect the OF portion, the peripheral portion and the edge portion of the wafer W. The wafer pond mill position detector is located at the light emitted from the light-emitting part 2 3 a. It is blocked by the wafer's peripheral part W2, but it will not be used by the OF part. The paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm). ) (Please read the precautions on the back before filling out this page) Order-line-17- Consumption cooperation of employees of the Central Bureau of Standards of the Ministry of Economic Affairs (printed A7 B7 V. Description of the invention) 5) W 1 block. Therefore, since the light emitted from the light-emitting portion 23a does not reach the light-receiving portion 23b, the peripheral portion W2 is intercepted by the peripheral portion W2 when passing through the photoreceptor ', so the photodetector detects that the peripheral portion W2 is at the honing position. When the wafer 0 F portion W1 passes near the photoreceptor, the photoreceptor detects the 0 F portion W 1 at the honing position by the light from the light emitting portion 2 3 a to the light receiving portion 2 3 b. The edge portion W3 can be detected by detecting the change from the light interception state to the light receiving state, and vice versa. The number 2 1 0 is a pressure detector to detect the working air pressure in the pneumatic cylinder 2 1 d. The pressing force F between the grindstone 2 1 a and the wafer W. The number 22 is a control device. To the control device 22, input the current working air pressure data from the pressure detector 21 related to the enamel stone 2 1 a and the pressure cylinder F 1 between wafer W and the current working air pressure from the enamel stone speed detector 2 1 m honing stone 2 1 a speed N b data from wafer speed detector 2 1 k stepper motor 2 1 c speed, ie data of wafer speed N s, and from wafer honing position detection Information on the wafer honing position of the wafer W of the tester 2 3. According to the input data, the control device 2 2 calculates the optimal speed of the stepper motor 2 1 c and outputs the result to the stepper motor 2 1 c. Next, a wafer rotation speed control mechanism in the present invention will be described below. Fig. 8 is a block diagram of the control device 22, which includes a honing position determination device 22a, a wafer speed setting device 2b, a speed comparator 22c, and a wafer speed calculation unit 22d. Wafer speed setting device 2 2 b Sets the wafer reference speed based on the pressure force F between wafer W and enamel stone 2 1 a measured by the pressure detector 2 1 〇 This paper size applies Chinese National Standard (CNS) A4 Specifications (210X 297mm) (Please read the precautions on the back before filling this page) LINE-18- A7 ------ B7______ V. Invention Description Meal) N 〇 (Wafer peripheral speed), and according to Rotation speed detector 2 1 m Measured rotation speed of honing stone N b. The speed comparator 2 2 c is used to calculate a deviation Δn between the wafer reference speed N o and the measured wafer W speed N w. Wafer honing position determination device 2 2 a calculates the honing position based on the measured signal X w input of wafer honing position detector 2 3 to identify the honing position between the 0F part, the circumferential part and the edge part. According to the honing position, a determination signal (corresponding to the OF part, the peripheral part, and the edge part) is sent to the wafer speed calculation unit 2 2 d. The wafer speed calculation unit 2 2 d includes one billion body 2 2 e, in which a predetermined correction 値 is stored in advance. In the wafer speed calculation unit 2 2 d, a correction 値 Sw is taken out from the memory body according to a determination signal (the opposite OF portion SW1, the circumferential portion SW2, or the edge portion sw3), and the corrected rotation speed N s is calculated according to the following equation and output to Stepping motor 2 1 c.
Ns=No (1 + Sw) ...... (2) S w ： s w 1 = -0.3 > Sw2=0, Sw3 — +0.7 " 經濟部中央標準局貝工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 訂 以下說明對晶圓削切部之搪磨設備操作。 壓迫力偵測器2 1 〇中，偵測氣力筒2 1 d中工作空 氣壓力P a再轉換成晶圓W與搪磨石2 1 a間壓迫力F， 考慮臂2 1 h之臂率（軸桿2 1 g與作用線間距離之比率 )，氣力筒2 Id之截面積等，此資料再輸入至晶圓轉速 設定裝置2 2 b。 作爲等式（2 )基準之晶圓基準轉速N 〇如下。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公着） -19- 經濟部中央標準局貝工消費合作社印裝 A7 ____ B7 五、發明説明（17 )Ns = No (1 + Sw) ...... (2) S w: sw 1 = -0.3 > Sw2 = 0, Sw3 — +0.7 " Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Please (Please read the precautions on the back before filling in this page.) Make the following instructions to operate the honing equipment on the wafer cutting section. In the pressing force detector 2 1 0, the working air pressure P a in the pneumatic cylinder 2 1 d is detected and converted into a pressing force F between the wafer W and the enamel stone 2 1 a. Considering the arm rate of the arm 2 1 h ( The ratio of the distance between the shaft 2 1 g and the action line), the cross-sectional area of the pneumatic cylinder 2 Id, etc. This data is then input to the wafer speed setting device 2 2 b. The wafer reference rotation speed N0 which is the basis of equation (2) is as follows. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297) -19- Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ____ B7 V. Description of the invention (17)
No = a6NbF1/2/C ……（3 ) 晶圓轉速設定裝置2 2 b中，對應所輸入壓迫力F及 搪磨石轉速N b之晶圓基準轉速N 〇計算後輸入至轉速比 較器2 2 c。 轉速比較器2 2 c中，計算出晶圓基準轉速N »與由 晶圓轉速偵測器2 1 k輸入之偵測晶圓轉速N w間偏差 △ N之比再輸入至晶圓轉速計算單元2 2 d。 晶圓位置資料X w經晶圓搪磨位置判定裝置輸入至晶 圓轉速計算單元2 2 d。 晶圓轉速計算單元2 2 d中，修正値由記憶體2 2 e 取出，乃根據對OF部Sw 1，圓周部Sw2或邊緣部 Sw3之判定訊號；及修正後晶圓轉速N s乃根據等式（ 2)計算，即Ns=No (1+Sw)，其上已用上取出 修正値S w。 本例中，如當修正値爲Swl= — 〇 . 3，Sw2 = 0，而S w 3 = + 0 . 7，若就晶圓位置（搪磨位置）所 測訊號爲〇F部W 1之一則晶圓轉速N s 2成N 〇，而若 所測訊號爲邊緣部W 3之一，則晶圓轉速N s 3爲最大値 〇 如此修正，對應如圖9 B所示晶圓轉速N s之晶圓轉 速訊號由晶圓轉速計算單元2 2 d輸出至步進馬達2 1 c 。圖9 B顯示若晶圓W轉動由圖9 A狀態經一定角度β時 晶圓轉速Ns。結果，以轉速Ns運轉步進馬達21c。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇χϋ公釐j (請先閲讀背面之注意事項再填寫本頁)No = a6NbF1 / 2 / C …… (3) In the wafer rotation speed setting device 2 2 b, the wafer reference rotation speed N corresponding to the input pressure F and the hone stone rotation speed N b is calculated and input to the rotation speed comparator 2 2 c. In the speed comparator 2 2 c, the wafer reference speed N »is calculated and the ratio of the deviation Δ N from the detected wafer speed N w input from the wafer speed detector 2 1 k is input to the wafer speed calculation unit. 2 2 d. The wafer position data X w is input to the wafer rotation speed calculation unit 2 2 d through the wafer honing position determination device. In the wafer speed calculation unit 2 2 d, the correction frame fetched from the memory 2 2 e is based on the determination signal of the OF portion Sw 1, the circumferential portion Sw2, or the edge portion Sw3; and the corrected wafer rotation speed N s is based on, etc. Equation (2) is calculated, that is, Ns = No (1 + Sw), on which the correction 値 S w has been taken out. In this example, if the correction 値 is Swl = — 0.3, Sw2 = 0, and Sw 3 = + 0.7, if the measured signal for the wafer position (grinding position) is 〇F section W 1 A wafer rotation speed N s 2 becomes N 〇, and if the measured signal is one of the edge portions W 3, the wafer rotation speed N s 3 is the maximum 値 〇 This is corrected, corresponding to the wafer rotation speed N s shown in FIG. 9B The wafer speed signal is output from the wafer speed calculation unit 2 2 d to the stepping motor 2 1 c. Fig. 9B shows the wafer rotation speed Ns when the wafer W rotates from the state of Fig. 9 A through a certain angle β. As a result, the stepping motor 21c is operated at the rotation speed Ns. This paper size applies to Chinese National Standard (CNS) A4 specifications (21〇χϋmm j (Please read the precautions on the back before filling this page)
-20- A7 B7 五'、發明説明纟8 ) 圖1 0顯示削切部搪磨設備2另例。 (請先閱讀背面之注念事項再填寫本頁) 此圖中，數字24爲一臂，可繞位於臂24a中間位 置處之支承軸桿2 4 b轉動。臂2 4 a端處支承一圓柱形 搪磨石2 4 c以繞轉動軸桿2 4 d轉動。搪磨石2 4 c圓 周表面上形成一成形削切槽。 如圖1 1及1 2 ’由臂2 4 a向上突出之轉動軸桿 2 4 d上端處裝一滑輪2 4 e。反之，靠近另一端之臂上 表面處固定一馬達。一皮帶2 4 h纏繞固定於馬達2 4 f 輸出軸之一滑輪24g，並繞過滑輪24e。 供壓迫臂24a之氣力筒24 i靠近臂24a另一端 一側面設置。氣力筒2 4 i之氣缸2 4 j內部由活塞 24k分成腔室S1及S2。接至活塞24k之一桿 2 4 1頂端接解臂2 4a側面，如圖1 〇及1 1所示。 線 搪磨石2 4 c附近安排一真空夾頭2 4m可水平轉動 。晶圓W受夾而以真空吸力保持於真空夾頭2 4 m上表面 上。驅動一未示構件而轉動真空夾頭2 4m。 經濟部中央標準局員工消費合作社印掣 真空夾頭2 4 m附近設一晶圓搪磨位置偵測器2 5以 偵測晶圓0 F部W 1。晶圓搪磨位置偵測器2 5包含一具 發光部2 5 a及受光部2 5 b之感光器。晶圓搪磨位置偵 測器2 5位於發光部2 5 a之光可被晶圓圓周部w 2檔住 而不會被OF部W1擋住之位置。當發光部2 5 a之光抵 受光部2 5 b，所受光轉成電壓値正比於其強度。即當晶 圓圓周部W2通過感光器之發光部2 5 a及受光部2 5 b 間，雖發光部2 5 a之光被圓周部W2攔截未抵受光部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -21 - 經 'k- 部 中 央 標 準 局 貝 工 消 费 合 作 社 印 % A7 B7 五、 發明説明 ) 1 1 2 5 b > 受 晶 圓 0 F 部 W 1 通 過 發 光部2 5 a 與受 光部 1 1 2 5 b 間 1 發 光 部 2 5 a 之 光 抵 受 光部2 5 b ，故 感光器 1 可 藉受 光部 2 5 b 之 光 接 收 測 得 〇 F部W 1 0 感光 器所測 S. 請 ! 先 訊 號輸 入 控 制 器 ( C P U ) 〇 控制 器2 6 中 y 根據 感光器 閱 讀 1 I 之 輸入 電 壓 峯 値 找出晶 圓 W 之 0 F部W 1 中 央位置 。若找 背 Λ 之 1 1 出 OF 部 W 1 中央位 置 因 已 知 0 F部W 1 尺 寸， 故可找 注 意 事 1 1 出 OF 部 W 1 及 圓 周 部 W 2 及 邊 緣 部W 3 〇 項 再 1 1 搪 磨 設 備 2 有 一 控 制 件 供切 換 至氣力 筒 2 4 i 之供應 % 本 頁 Γ I 壓 力成 二 階 t 即 P 1 P 2 吸 P 3 (P 2 > P 1 > Ρ 3 ) 1 1 I 5 根據 感 光 器 所 測 結 果 〇 1 1 控制件包含 一 氣 力 控 制 電 路 2 7及控制 器 2 6 ，如圖 1 1 1 0所示 〇 訂 1 以 下 參 考 圖 1 0 說 明 氣 力 控 制 電路2 7 之 結構 〇 1 I 圖 所 示 氣 力 控 制 電 路 2 7 中 符號L 0 爲 一原 始壓力 1 1 1 線 ，接 至 如 空 氣 壓 縮 機 之 高 壓 供 應 源（未 示 ) 。屋 力控制 1 1 閥 V 1 > V 2 及 V 3 及 電 磁 閥 Μ V 1，Μ V 2 及Μ V 3分 線 別 平行 連 接 至 原 始 壓 力 線 L 〇 〇 1 1 .壓 力 控 制 閥 V 1 > V 2 及 V 3 用於分別 降 低供 自原始 1 I 壓 力線 L 〇 之 原 始 壓 力 成 P 1 ， Ρ 2及Ρ 3 ( Ρ 2 > Ρ 1 1 ί I > P 3 ) 〇 各 電 磁 閥 Μ V 1 Μ V 2及Μ V 3 可由 控制器 1 r 2 6切 換 至 圖 1 0 所 示 位 置 a % b 或c。 若位 置切 換至a 1 1 t 降至 P 1 > P 2 或 Ρ 3 之 壓 縮 空 氣分別 經 降 壓線 L 1， 1 1 L 2或 L 3 供 至 氣 力 筒 2 4 i 之 腔 室。若 位 置 切換 至b ( V 中 性位 置 .) 9 氣 中 筒 2 4 i 之 腔 室 S 2中 空 氣 排放 至大氣 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公釐） -22- A7 ___B7 五、發明説明έο ) 中〇 氣力筒2 4 i之腔室經降壓線L 4接至電磁閥MV4 。電磁閥MV 4亦可由控制器2 6切換至圖所示位置a或 b。若電磁閥MV4位置切換至a，由原始壓力線Lo供 應之壓力供至氣力筒2 4 i之腔室S 1，若位置切換至b ，氣力筒2 4 i腔室之空氣排放至大氣中。 搪磨設備2中，對晶圓WOF部W1 ，圓周部W2及 邊緣部W3搪磨步驟中壓迫臂1之壓迫力FI，F2及 F3強度分別設定，乃根據OF部W1曲率半徑r1 °° )，圓周部W2曲率半率r 2及邊緣部W3曲率半徑 r3，故F1>F2>F3，且分別接觸壓力値σΐ， σ 2及σ 3大致彼此相等，如圖1 3所示。結果，，可ρ方 止晶圓特定點產生過量接觸壓力，尤係邊緣部W3處，@ 可有效防止晶圓W切入搪磨石2 1 a。 例如，使用半徑1 5 Omm之搪磨石2 4 c搪磨 直徑之晶圓W削切部，而OF部W1曲率半徑r1舄無_ 大（rl=°〇)，圓周部W2半徑r2爲lOOmm，# ir〇 經濟部中央標準局員工消費合作社印製 邊緣部W3半徑r 3爲5mm，可使晶圓W之0F>Wl ，圓周部W2及邊緣部W3分別之接觸壓力値σ 1，σ 2 及σ3大致彼此相等（σ1：ί：σ2Χ：σ3)，藉對晶_ WOF部W1，圓周部W2及邊緣部W3搪磨步驟時 臂1分別之壓迫力FI，F2及F3強度之比F1 · p>2 :严3爲30:13:1。 就削切部拋光裝置3 1，可使用圖6 ’ 7及1 Q〜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -23- 經濟部t央揉準局貝工消費合作社印製 A7 _B7 五、發明説明h ) 1 2所示裝置，其中周界具成形削切槽之圓柱形拋光輪可 取代削切部搪磨裝置2 1中搪磨石2 1 a或2 4 c。其功 效大致相同於搪磨裝置21。 亦即，對晶圓之周圍削切部進行均勻搪磨處理’晶圓 再傳送至如圖6或10所示裝置之削切部拋光裝置31以 對削切部均勻拋光。 削切部拋光裝置3 1中，藉第一拋光壓迫力F p 1相 當地壓靠圓柱形拋光輪之成形削切槽而拋光晶圓之搪磨後 OF部，同時以第一拋光轉速Np 1轉動晶圓並轉動拋光 輪；藉第二拋光壓迫力F p 2相當地壓迫圓周部靠於拋光 輪而拋光搪磨後圓周部，同時以第二拋光轉速Np 2轉動 晶圓並轉動拋光輪：並以第三拋光壓迫力F p 3相當地壓 迫靠於拋光輪而拋光各塘磨後邊緣部，同時以第三轉速 N p 3轉動晶圓並轉動拋光輪，依序進行。例如，第一、 第二及第三拋光壓迫力F p 1，F p 2及F p 3定爲大致 彼此相等，而晶圓之第一、第二及第三拋光轉速N p 1， Np2 及 Νρ3 定爲 Npl<Np2<Np3。因此，可 用拋光輪於整個周圍削切部上進行大致均勻拋光。 爲進行大致均勻拋光，第一、第二及第三拋光壓迫力 F P 1，F p 2及F p 3可如搪磨削切部時相同理由而具 F p 1 > F p 2 > F p 3之關係。例如，就拋光8吋直徑 晶圓W之削切部，晶圓W具OF部W1曲率半徑r1爲無 限大（rl=〇〇) ，圓周部W2半徑r2爲100mm， 邊緣部W3半徑爲5mm，使用1 50mm半徑之拋光輪 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 竣 -24- 經濟部中央標準局員工消費合作社印製 A7 ___ B7 __ 五、發明説明έ2 ) ，可使晶圓W之OF部W1，圓周部W2及邊緣部W3分 別之接觸壓力値σ 1 ，σ 2及σ 3大致彼此相等’即對晶 圓W之OF部W1，圓周部W2及邊緣部W3拋光步驟時 分別設定壓迫臂1之壓迫力強度Fpl ’ Fp2及Fp3 之比率爲30:13:1。 此外，亦可設定晶圓之第一、第二及第三拋光轉速 Np 1，Np 2及Np 3，使拋光輪對晶圓之方位平坦部 、圓周部及邊緣部之加工能力大致彼此相等，根據以下等 式。 C = a5 (1/R1 + 1/ R2) 1/2/Np > 其中as’爲一常數，R1爲拋光輪半徑，R2爲方位 平坦部、圓周部或邊緣部曲率半徑，而Np爲拋光用晶圓 之轉速。 卸載器3 0包含一未示之升降裝置’使逐一升降裝有 多數晶圓W於內之卡匣4，及一皮帶輸送器3 1 a可逐入 放置晶圓W至卡匣4中，如圖1 4所示。卸載器3 0之結 構中可用皮帶輸送器3 1 a逐一將晶圓W放入卡匣4並逐 步升起。 根據處理晶圓之方法或處理設備例’因於拋光周圍削 切部前搪磨周圍削切部可縮短拋光周圍削切部步驟中加工 削切部表面至粗度低於預定値所需時間而得到目標平滑度 ，並將前步驟中變形之削切部截面形狀橋正。例如’根據 此例，以P - V値而言就得到約5 0 n m粗度之削切部表 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 -25- 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明έ3 ) 面所需時間約爲無搪磨步驟方法之2 0%左右。 根據本發明實施例，可於晶圓W整個削切部上均勻拋 光，包含OF部W1，圓周部W2及邊緣部W3，並確保 最佳拋光精度而改進其生產力。 根據以上例之周圍削切部處理設備中，一搪磨石或拋 光輪壓靠一晶圓W。然而可採用相反地以晶圓W壓靠搪磨 石或拋光輪之結構。 根據本發明，可於拋光周圍削切部步驟中極度縮短加 工削切部表面至一預粗度値以下所需時間，並矯正之前步 驟中變形之削切部截面形狀。 此外，可於晶圓整個削切部上均勻拋光，含Ο F部、 圓周部及邊緣部，並確保最佳拋光精度，提高生產力》 圖式簡要說明 由以下詳述參考圖式例示地說明本發明，並非爲本發 明之限定，其中： 圖1爲應用於本發明之晶圓一例平面圖； .圖2爲本發明一例之處理方法步驟方塊圖； 圖3爲本發明一例之處理設備示意平面圖； 圖4爲本例所用裝載器例側視圖； 圖5爲本例所用傳送裝置例立體圖； 圖6爲本發明中削切部搪磨裝置例之整體結構示意圖 » 圖7爲圖6由箭頭Z之側視圖； 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) -s iH. -26- 第861137〇0號專利申請赛 中文說明書修正頁 B7 民國88年6月呈年6月 五、發明說明（?4 ) mm 煩請委员明示Μ年6月.r日所提之 修正本有無變更貧質内容是K予修aL-e 圖8爲本發明中控制一步進馬達之控制裝置例方塊圖 t 圖9A及9 B說明晶圓之搪磨狀態隨時間改變，圖 9 A爲轉動中晶圓平面圖，圖9 B說明晶圓轉角0與晶圓 轉動N s間關係； 圖10示意圖說明本發明中削切部搪磨裝置另例整體 結構； 圖11爲圖10所示削切部搪磨裝置一部側視圖： 圖l· 2爲圖1 〇所示削切部搪磨裝置一部另一側-視圖 y 圖13顯示壓迫力於晶圓與搪磨石間就整値周圍削切 部提供均勻接觸壓力；及 圖1 4爲本例所用卸載器一例側視圖。 主要元件符號說明： (請先閲讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 1 處理設備 2 削切部搪磨設置 3 削切部拋光設置 2 1 削切部搪磨裝置 2 1 ί a 圓柱形搪磨石 3 1 削切部拋光裝置 W 1 方位平坦部 W 2 圓周部 W 3 邊緣部 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公« )-20- A7 B7 Five ', description of invention 纟 8) Figure 10 shows another example of the honing equipment 2 of the cutting part. (Please read the notes on the back before filling out this page) In this figure, the number 24 is an arm, which can be rotated around the support shaft 2 4 b located at the middle position of the arm 24a. A cylindrical honing stone 2 4 c is supported at the end of the arm 2 4 a to rotate around the rotation shaft 2 4 d. A grooving stone 2 4 c is formed with a cutting groove on its peripheral surface. As shown in Figs. 1 1 and 1 2 ', a pulley 2 4e is mounted on the upper end of the rotating shaft 2 4 d protruding from the arm 2 4 a. Conversely, a motor is fixed near the upper surface of the arm near the other end. A belt 24 h is wound around and fixed to one of the pulleys 24 g of the output shaft of the motor 2 f and bypasses the pulley 24 e. The pneumatic cylinder 24i for the compression arm 24a is provided near one side of the other end of the arm 24a. The inside of the cylinder 2 4 j of the pneumatic cylinder 2 4 i is divided into the chambers S1 and S2 by the piston 24k. The top of one of the rods 2 4 1 connected to the piston 24k is connected to the side of the release arm 2 4a, as shown in FIGS. 10 and 11. A vacuum chuck 2 4m can be horizontally rotated near the enamel stone 2 4 c. The wafer W is clamped and held on the upper surface of the vacuum chuck 2 4 m by vacuum suction. Drive an unillustrated member to rotate the vacuum chuck 24m. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A wafer honing position detector 2 5 is located near the vacuum chuck 2 4 m to detect wafer 0 F and W 1. The wafer honing position detector 25 includes a photoreceptor having a light emitting portion 25 a and a light receiving portion 2 5 b. The wafer honing position detector 25 is located at a position where the light of the light emitting portion 25 a can be blocked by the wafer peripheral portion w 2 and not blocked by the OF portion W1. When the light from the light-emitting portion 25 a reaches the light-receiving portion 2 5 b, the received light is converted into a voltage 値 which is proportional to its intensity. That is, when the wafer peripheral portion W2 passes between the light emitting portion 2 5 a and the light receiving portion 2 5 b of the photoreceptor, although the light from the light emitting portion 2 5 a is intercepted by the peripheral portion W 2, the light receiving portion does not reach the light receiving portion. ) A4 size (210X 297 mm) -21-printed by the Central Bureau of Standardization of the Ministry of Standards and Engineering Co., Ltd.% A7 B7 V. Description of the invention) 1 1 2 5 b > Received wafer 0 F section W 1 through light The light from the light-emitting part 2 5 a between the part 2 5 a and the light-receiving part 1 1 2 5 b reaches the light-receiving part 2 5 b. Therefore, the photoreceptor 1 can be measured by the light receiving of the light-receiving part 2 5 b. 0F part W 1 0 S. Measured by the photo sensor. Please! The first signal is input to the controller (CPU) 〇 In controller 2 6 y, according to the photo sensor reading 1 I input voltage peak, find the center position of 0 W of the wafer W. If you want to find the 1 of the OF part W 1 at the center of the back Λ, the size of the F part W 1 is known, so you can find the attention 1 1 of the OF part W 1 and the circumferential part W 2 and the edge part W 3 〇 1 1 Honing equipment 2 There is a control part for switching to the supply of the pneumatic cylinder 2 4 i% on this page Γ I The pressure is in the second order t i. 5 According to the measured result of the photoreceptor, the control part includes a pneumatic control circuit 2 7 and a controller 2 6, as shown in FIG. 1 1 10. Order 1 The structure of the pneumatic control circuit 2 7 will be described with reference to FIG. 10 below. The symbol L 0 in the pneumatic control circuit 2 7 shown in the figure I is an original pressure line 1 1 1 and is connected to a high-pressure supply source (not shown) such as an air compressor. Roof force control 1 1 valve V 1 > V 2 and V 3 and solenoid valves MV V 1, MV V 2 and MV V 3 are connected in parallel to the original pressure line L 〇01 1. Pressure control valve V 1 > V 2 and V 3 are used to reduce the original pressure supplied from the original 1 I pressure line L 〇 to P 1, P 2 and P 3 (Ρ 2 > ρ 1 1 ί I > P 3) 〇 each solenoid valve MV 1 MV 2 and MV 3 can be switched from the controller 1 r 2 6 to the position a% b or c shown in Fig. 10. If the position is switched to a 1 1 t, the compressed air that drops to P 1 > P 2 or P 3 is supplied to the chamber of the pneumatic cylinder 2 4 i via the depressurization lines L 1, 1 1 L 2 or L 3, respectively. If the position is switched to b (V neutral position.) 9 Air in the cylinder 2 4 i The air in the chamber S 2 is discharged to the atmosphere 1 1 1 This paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) -22- A7 ___B7 V. Description of the invention ο) 〇 The chamber of the pneumatic cylinder 2 4 i is connected to the solenoid valve MV4 via the pressure reducing line L 4. The solenoid valve MV 4 can also be switched by the controller 2 6 to the position a or b shown in the figure. If the position of the solenoid valve MV4 is switched to a, the pressure supplied by the original pressure line Lo is supplied to the chamber S 1 of the pneumatic cylinder 2 4 i. If the position is switched to b, the air in the chamber of the pneumatic cylinder 2 4 i is discharged to the atmosphere. In the honing equipment 2, the pressing force FI, F2 and F3 of the pressing arm 1 in the honing step of the wafer WOF part W1, the circumferential part W2 and the edge part W3 are set respectively, according to the curvature radius r1 ° of the W part of the OF part.) Since the radius of curvature r 2 of the circumferential portion W 2 and the radius of curvature r 3 of the edge portion W 3, F 1 > F 2 > F 3 and the contact pressures 値 σΐ, σ 2 and σ 3 are approximately equal to each other, as shown in FIG. 13. As a result, ρ can prevent excessive contact pressure from being generated at a specific point of the wafer, especially at the edge portion W3, and @ can effectively prevent the wafer W from cutting into the hone 2 1 a. For example, a wafer with a radius of 15 Omm and a diameter of 2 4 c is used to grind the wafer W cutting portion, and the radius of curvature W1 of the OF portion W1 is not large (rl = ° 〇), and the radius r2 of the circumferential portion W2 is 100mm. # Ir〇 The central government bureau of the Ministry of Economic Affairs, Consumer Cooperatives, printed the edge portion W3 with a radius r 3 of 5mm, which can make the wafer W of 0F > Wl, the circumferential portion W2 and the edge portion W3 contact pressure 値 σ 1, σ 2 And σ3 are approximately equal to each other (σ1: ί: σ2X: σ3). By the sizing step of the WOF part W1, the circumferential part W2 and the edge part W3, respectively, the pressing force FI of the arm 1 and the strength ratio F1 of F2 and F3 · p > 2: Yan 3 is 30: 13: 1. For the cutting device polishing device 31, you can use Figure 6'7 and 1 Q ~ This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) -23- Ministry of Economic Affairs, Tyang Kwan Zhun Bureau Shellfisher Consumer Cooperative Print A7 _B7 V. Description of the invention h) 1 2 device, in which a cylindrical polishing wheel with a shaped cutting groove on the perimeter can replace the honing device of the cutting part 2 1 the honing stone 2 1 a or 2 4 c . Its effect is substantially the same as that of the honing device 21. That is, uniformly honing the cutting portion around the wafer 'wafer and then transferring it to the cutting portion polishing device 31 of the apparatus shown in Fig. 6 or 10 to uniformly polish the cutting portion. In the cutting part polishing device 31, the first polishing pressing force F p 1 is pressed against the shaped cutting groove of the cylindrical polishing wheel to polish the honed OF part of the wafer, and at the same time, the first polishing speed Np 1 Rotate the wafer and rotate the polishing wheel; the second polishing pressing force F p 2 considerably presses the peripheral portion against the polishing wheel to polish and hone the peripheral portion, and at the same time rotate the wafer and rotate the polishing wheel at the second polishing speed Np 2: The third polishing pressing force F p 3 is pressed against the polishing wheel to polish the edges of each pond mill. At the same time, the wafer is rotated at the third rotation speed N p 3 and the polishing wheel is rotated in sequence. For example, the first, second, and third polishing pressing forces F p 1, F p 2, and F p 3 are set to be substantially equal to each other, and the first, second, and third polishing rotation speeds of the wafer N p 1, Np 2, and Νρ3 is defined as Npl < Np2 < Np3. Therefore, the polishing wheel can be used to perform substantially uniform polishing on the entire peripheral cutout. In order to perform approximately uniform polishing, the first, second, and third polishing pressing forces FP 1, F p 2 and F p 3 can be F p 1 > F p 2 > F The relationship between p 3. For example, for an 8-inch-diameter wafer W, the wafer W has an OF portion W1 with a radius of curvature r1 of infinite (rl = 〇〇), a circumferential portion W2 with a radius r2 of 100 mm, and an edge portion W3 with a radius of 5 mm. Use a polishing wheel with a radius of 50mm. The paper size is in accordance with Chinese national standards (CNS> A4 size (210X297mm) (please read the precautions on the back before filling this page). -24 Print A7 ___ B7 __ 5. Description of the invention 2), the contact pressure OFσ 1, σ 2 and σ 3 of the wafer W of the W portion, the circumferential portion W2 and the edge portion W3 can be made equal to each other, that is, the opposite crystal In the polishing step of the OF portion W1, the circumferential portion W2, and the edge portion W3 of the circle W, the ratio of the pressing force intensity Fpl'Fp2 and Fp3 of the pressing arm 1 is set to 30: 13: 1, respectively. In addition, the first, second, and third polishing speeds Np 1, Np 2, and Np 3 of the wafer can also be set, so that the processing capabilities of the polishing wheel to the azimuth flat portion, the circumferential portion, and the edge portion of the wafer are approximately equal to each other. According to the following equation. C = a5 (1 / R1 + 1 / R2) 1/2 / Np > where as' is a constant, R1 is the radius of the polishing wheel, R2 is the radius of curvature of the azimuth flat, circumferential or edge portion, and Np is polished Use the speed of the wafer. The unloader 30 includes a lifting device (not shown) to lift and lower the cassette 4 containing most wafers one by one, and a belt conveyor 3 1 a to place the wafer W into the cassette 4 one by one, such as Figure 14 shows. In the structure of the unloader 30, the belt conveyor 3 1 a can be used to place the wafers W into the cassette 4 one by one and gradually lifted. According to the method of processing the wafer or the processing equipment example, because the peripheral cutting of the peripheral cutting portion can be shortened by polishing the peripheral cutting portion before polishing, the time required to process the surface of the cutting portion in the step of polishing the peripheral cutting portion to be less than the predetermined thickness can be reduced. Obtain the target smoothness and bridge the shape of the cut section deformed in the previous step. For example, 'According to this example, in the case of P-V 値, a cut sheet with a thickness of about 50 nm is obtained. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). (Please read the back Note: Please fill in this page again.) Order-25- Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention 3) The time required for the surface is about 20% of the method without honing. According to the embodiment of the present invention, the entire polishing portion of the wafer W can be polished uniformly, including the OF portion W1, the circumferential portion W2, and the edge portion W3, and the best polishing accuracy can be ensured to improve its productivity. In the peripheral cutting section processing equipment according to the above example, a honing stone or a polishing wheel is pressed against a wafer W. However, a structure in which the wafer W is pressed against the enamel stone or the polishing wheel instead may be used. According to the present invention, it is possible to extremely shorten the time required to process the surface of the cutting portion to a pre-roughness 値 in the step of polishing the surrounding cutting portion, and to correct the cross-sectional shape of the cutting portion deformed in the previous step. In addition, the wafer can be polished uniformly over the entire cut-out part, including 0F, peripheral and edge parts, and ensure the best polishing accuracy and improve productivity. Brief description of the drawings The invention is not a limitation of the present invention, in which: FIG. 1 is a plan view of an example of a wafer applied to the present invention; FIG. 2 is a block diagram of the processing method steps of an example of the present invention; FIG. 3 is a schematic plan view of an example of a processing equipment of the present invention; Fig. 4 is a side view of an example of a loader used in this example; Fig. 5 is a perspective view of an example of a conveying device used in this example; Fig. 6 is a schematic diagram of the overall structure of an example of a honing device for a cutting part in the present invention » Side view; This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) -s iH. -26- Chinese Manual for Patent Application Competition No. 861137〇0 Amendment page B7, June 88, Republic of China, June 5th, invention description (? 4) mm Members are kindly requested to indicate whether the amendments mentioned in June M. r have any changes. The poor content is K 质 修 aL-e Figure 8 Control a step in the present invention A block diagram of an example of a control device. Figures 9A and 9B illustrate the change in the honed state of the wafer over time. Figure 9A is a plan view of the wafer during rotation, and Figure 9B illustrates the relationship between wafer rotation angle 0 and wafer rotation N s. 10 is a schematic view illustrating the overall structure of another example of the honing device of the cutting part in the present invention; FIG. 11 is a side view of the honing device of the cutting part shown in FIG. 10: FIG. 1.2 is the cutting part shown in FIG. The other side of the honing device-view y Fig. 13 shows that the pressing force provides a uniform contact pressure between the wafer and the honing stone on the surrounding cutting part; and Fig. 14 is a side view of an unloader used in this example. Description of the main component symbols: (Please read the precautions on the back before filling in this page >> Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Consumer Cooperatives 1 Processing equipment 2 Cutting and honing settings 3 Cutting and polishing settings 2 1 Cutting and cutting Honing device 2 1 ί a cylindrical honing stone 3 1 Cutting part polishing device W 1 Orientation flat part W 2 Circumferential part W 3 Edge part This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 male « )